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Recent development of thermoelectric nanofibers and their composites
This review deals with the recent development of thermoelectric (TE) nanofibers and their composite materials. Typical processing and manufacturing technologies for preparing nanofibers are introduced. Specifically, electrospinning, electrochemical oxidation, and liquid phase chemical deposition approaches are discussed. Various kinds of TE nanofibers are introduced one-by-one. Several important inorganic and organic nanofibers including carbon-based nanofibers, conducting polymer-based nanofibers, and transition metal oxide-based nanofibers with significant thermoelectric responses are shown. Thermoelectric properties of some important nanofibers are compared. The applications of TE nanofibers for energy conversion, thermal imaging and temperature sensing are illustrated. Perspectives and concluding remarks are presented.
Cross-property deep transfer learning framework for enhanced predictive analytics on small materials data
Abstract Artificial intelligence (AI) and machine learning (ML) have been increasingly used in materials science to build predictive models and accelerate discovery. For selected properties, availability of large databases has also facilitated application of deep learning (DL) and transfer learning (TL). However, unavailability of large datasets for a majority of properties prohibits widespread application of DL/TL. We present a cross-property deep-transfer-learning framework that leverages models trained on large datasets to build models on small datasets of different properties. We test the proposed framework on 39 computational and two experimental datasets and find that the TL models with only elemental fractions as input outperform ML/DL models trained from scratch even when they are allowed to use physical attributes as input, for 27/39 (≈ 69%) computational and both the experimental datasets. We believe that the proposed framework can be widely useful to tackle the small data challenge in applying AI/ML in materials science.
Tandem bulk oxygen diffusion and surface reactions in reducible metal oxides control redox cycle dynamics
The interplay between bulk oxygen diffusion and surface reactions in reducible metal oxides is key in heterogeneous catalysts, but direct measurements of oxygen mobility, transient kinetics, and in situ spectroscopies have been lacking. Here, we reveal complex dynamic behavior of ceria-zirconia by H 2 using transient kinetics via mass spectrometry and in situ Raman and near-ambient pressure x-ray photoelectron spectroscopies. Molecular dynamics simulations with a machine learning potential delineate competitive oxygen diffusion mechanisms, with an optimal mobility at intermediate reductions. We expose a compensation between vacancy availability and lattice distortion at intermediate to high reductions and Frenkel defects at low reductions, underscoring a potential deficiency of 16 O/ 18 O exchange experiments in deducing oxygen mobility. Vacancies in proximity require electron localization on Ce atoms further away. The continuous replenishment of surface oxygen results in a varying reduction rate, with H 2 dissociation being the rate-limiting step. Multiscale transient simulations, consistent with experiments, indicate catalysts of potentially spatially varying oxidation states. The approach is broadly applicable to reducible oxide materials.
GaSb doping facilitates conduction band convergence and improves thermoelectric performance in n-type PbS
P-type lead chalcogenides have superior thermoelectric performance because they exhibit the energy convergence of several valence bands. However, despite the existence of two conduction bands, there has been no report about conduction band (CB) convergence for n-type counterparts because of the large energy difference between them. Therefore, new strategies are required to manipulate the CBs if enhancing the electrical transport performance of n-type lead chalcogenides is to be achieved. PbS is a highly attractive member of the lead chalcogenides because of its high earth-abundance and low cost. Here, we report that the introduction of GaSb can successfully dope the PbS matrix with Ga and Sb atoms occupying the Pb site in its rock salt structure. GaSb doping leads to conduction band convergence and enlarged effective density of state mass for n-type PbS. This effect results in superior power factor and decreased lattice thermal conductivity caused by the soft phonon modes and point defect scattering of phonons. Consequently, a record-high average power factor PF avg of ~20.4 μW cm –1 K –2 and figure of merit ZT avg of ~0.84 in the temperature range of 400 K to 923 K were obtained, higher than any n- and p-type PbS-based thermoelectric materials.
2018 LDRD Annual Report (Argonne National Laboratory)
Argonne National Laboratory’s Laboratory Directed Research and Development (LDRD) program encourages the development of novel technical concepts, enhances the Laboratory’s research and development (R&D) capabilities, and enables pursuit of strategic laboratory goals. Argonne’s LDRD projects are proposal based and peer reviewed, supporting ideas that require advanced exploration so they can be sufficiently developed to pursue support through normal programmatic channels. Among the aims of the projects supported by the LDRD program are the establishment of engineering proofs of principle, assessment of design feasibility for prospective facilities, development of instrumentation or computational methods or systems, and discoveries in fundamental science and exploratory development. All LDRD projects have demonstrable ties to one or more of the science, energy, environment, and national security missions of the U.S. Department of Energy (DOE) and its National Nuclear Security Administration (NNSA), and many are also relevant to the missions of other federal agencies that sponsor work at Argonne. A natural consequence of the more “applied” type projects is their concurrent relevance to industry. The LDRD program is managed in overarching portfolios, each containing multiple projects each fiscal year. The LDRD Prime portfolio is further divided into strategic focus areas aligned with Argonne’s strategic plan. The largest component of Argonne’s program is LDRD Prime, which emphasizes R&D explicitly aligned with Laboratory major initiatives in support of Argonne’s strategic plan. The choice of Focus Areas under the LDRD Prime component reflects the major initiatives; the state of development of relevant technical fields; the potential value of advancing those fields to DOE/NNSA and the nation; and the compatibility of the fields with existing facilities, capabilities, and staff expertise at Argonne. Focus Areas with projects that ended in FY18 are: Advanced Computing, Biological and Environmental Science Capability Development, Energy Manufacturing Science and Engineering, Hard X-ray Sciences, Materials and Chemistry, Securing Energy and Critical Resources, and The Universe as Our Laboratory (ULab).
A System for Standardizing and Combining U.S. Environmental Protection Agency Emissions and Waste Inventory Data
The U.S. Environmental Protection Agency (USEPA) provides databases that agglomerate data provided by companies or states reporting emissions, releases, wastes generated, and other activities to meet statutory requirements. These databases, often referred to as inventories, can be used for a wide variety of environmental reporting and modeling purposes to characterize conditions in the United States. Yet, users are often challenged to find, retrieve, and interpret these data due to the unique schemes employed for data management, which could result in erroneous estimations or double-counting of emissions. To address these challenges, a system called Standardized Emission and Waste Inventories (StEWI) has been created. The system consists of four python modules that provide rapid access to USEPA inventory data in standard formats and permit filtering and combination of these inventory data. When accessed through StEWI, reported emissions of carbon dioxide to air and ammonia to water are reduced approximately two- and four-fold, respectively, to avoid duplicate reporting. StEWI will greatly facilitate the use of USEPA inventory data in chemical release and exposure modeling and life cycle assessment tools, among other things. To date, StEWI has been used to build the recent USEEIO model and the baseline electricity life cycle inventory database for the Federal LCA Commons.
Charge Transport Characteristics of Molecular Electronic Junctions Studied by Transition Voltage Spectroscopy
The field of molecular electronics is prompted by tremendous opportunities for using a single-molecule and molecular monolayers as active components in integrated circuits. Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been demonstrated. However, a full understanding of the crucial factors that affect charge transport through molecular electronic junctions should yet be accomplished. Remarkably, recent advances in transition voltage spectroscopy (TVS) elucidate that it can provide key quantities for probing the transport characteristics of the junctions, including, for example, the position of the frontier molecular orbital energy relative to the electrode Fermi level and the strength of the molecule–electrode interactions. These parameters are known to be highly associated with charge transport behaviors in molecular systems and can then be used in the design of molecule-based devices with rationally tuned electronic properties. This article highlights the fundamental principle of TVS and then demonstrates its major applications to study the charge transport properties of molecular electronic junctions.
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (E eƒƒ ) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be E$^{-1.8}_{eƒƒ}$ and E$^{-2.4}_{eƒƒ}$, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of E eƒƒ in controlling the value of channel mobility in 4H-SiC MOSFETs.
Ru Single Atoms on One-Dimensional CF@g-C 3 N 4 Hierarchy as Highly Stable Catalysts for Aqueous Levulinic Acid Hydrogenation
Herein, we report a stable catalyst with Ru single atoms anchored on a one-dimensional carbon fiber@graphitic carbon nitride hierarchy, by assembling wet wipes composed of fiber-derived carbon fiber (CF), melamine-derived graphitic carbon nitride (g-C3N4) and RuCl3 before NaBH4 reduction. The atomically dispersed Ru species (3.0 wt%) are tightly attached via N-coordination provided by exterior g-C3N4 nanosheets, and further stabilized by the interior mesoporous CF. The obtained CF@g-C3N4–Ru SAs catalyst can be cycled six times without notable leaching of Ru or loss of GVL yield in the acidic media. This catalyst is more stable than Ru nanoparticles supported on CF@g-C3N4, as well as Ru single atoms anchored on CF and g-C3N4, and proves to be one of the most efficient metal catalysts for aqueous LA hydrogenation to γ-valerolactone (GVL). The isolated Ru atoms by strong N-coordination, and their enhanced electron/mass transfer afforded by the one-dimensional hierarchy, can be responsible for the excellent durability of CF@g-C3N4–Ru SAs under harsh reaction conditions.
Improving the Fracture Toughness and Ductility of Liquid-Phase Sintered WNiFe Tungsten Heavy Alloys by High-Temperature Annealing
Tungsten heavy alloys (WHAs) are candidates for use in fusion reactor divertors. Here, we characterize liquid-phase sintered WHAs with 90, 92.5, 95, and 97 (wt.%) tungsten (W), with a balance of a 0.7Ni–0.3Fe ductile phase. These WHAs show remarkable room temperature (RT) fracture toughness at the maximum load, K Jm , ranging from ≈ 38 to 107 MPa√m, compared to a monolithic W toughness of ≈ 8 MPa√m. In most cases, the fracture of WHAs occurs through stable crack tearing. However, the 97W WHA has the lowest toughness and fracture elastically in all but the smallest specimens. As lower Ni contents are desirable for fusion application, we explore the potential for improving the ductility and K Jm of WHAs using vacuum annealing at 1300 °C for 24 h. The microstructural observations reveal negligible changes in the WHA microstructure and constituent compositions. While annealing reduces the Vickers microhardness (HV), it does not significantly change the RT yield (σ y ) and ultimate (σ u ) strengths but results in beneficial increases in total elongation in the 95 and 97W WHAs by a factor of 2. RT tests on the precracked three-point-bend (3PB) bars show that annealing increases the K Jm of these WHAs, and in the case of the 97W WHA, the increase is from 42 to 92%, depending on the size of the specimen. Toughening is due to enhanced crack tip process zone microcracking and dilatation.
Deformation Behavior of β Phase in a WE54 Magnesium Alloy
Second phases play a significant role in the development of high-performance magnesium alloys with rare earth elements. Here, in situ tensile tests combined with synchrotron radiation were carried out to investigate the deformation behavior of β phases in a WE (Mg–Y–Gd–Nd) alloy. By lattice strain analysis, it was found that micro load continuously transferred from the soft α-Mg matrix to the hard β phases during the whole plastic deformation, while this behavior was much more obvious at the beginning of deformation. Based on diffraction peak broadening, Williamson–Hall (W–H) plotting was used to study the microstrain of β phases. The results showed that the microstrain of β phases increased rapidly within 4% plastic strain and reached the maximum at plastic strain of ~6.5%. Since the β phases acted as hard phases, the microstrain was considered as a sign of the stress concentration near phase interfaces. It was also suggested that the effective release of local stress concentration at the β/α-Mg interface benefited the ductility of the WE alloy by the plastic deformation of β phases and phase interface sliding.
A Modified Embedded-Atom Method Potential for a Quaternary Fe-Cr-Si-Mo Solid Solution Alloy
Ferritic-martensitic steels, such as T91, are candidate materials for high-temperature applications, including superheaters, heat exchangers, and advanced nuclear reactors. Considering these alloys’ wide applications, an atomistic understanding of the underlying mechanisms responsible for their excellent mechano-chemical properties is crucial. Here, we developed a modified embedded-atom method (MEAM) potential for the Fe-Cr-Si-Mo quaternary alloy system—i.e., four major elements of T91—using a multi-objective optimization approach to fit thermomechanical properties reported using density functional theory (DFT) calculations and experimental measurements. Elastic constants calculated using the proposed potential for binary interactions agreed well with ab initio calculations. Furthermore, the computed thermal expansion and self-diffusion coefficients employing this potential are in good agreement with other studies. This potential will offer insightful atomistic knowledge to design alloys for use in harsh environments.
Nanocluster Evolution in D9 Austenitic Steel under Neutron and Proton Irradiation
Austenitic stainless steel D9 is a candidate for Generation IV nuclear reactor structural materials due to its enhanced irradiation tolerance and high-temperature creep strength compared to conventional 300-series stainless steels. But, like other austenitic steels, D9 is susceptible to irradiation-induced clustering of Ni and Si, the mechanism for which is not well understood. This study utilizes atom probe tomography (APT) to characterize the chemistry and morphology of Ni–Si nanoclusters in D9 following neutron or proton irradiation to doses ranging from 5–9 displacements per atom (dpa) and temperatures ranging from 430–683 °C. Nanoclusters form only after neutron irradiation and exhibit classical coarsening with increasing dose and temperature. The nanoclusters have Ni 3 Si stoichiometry in a Ni core–Si shell structure. This core–shell structure provides insight into a potentially unique nucleation and growth mechanism—nanocluster cores may nucleate through local, spinodal-like compositional fluctuations in Ni, with subsequent growth driven by rapid Si diffusion. This study underscores how APT can shed light on an unusual irradiation-induced nanocluster nucleation mechanism active in the ubiquitous class of austenitic stainless steels.
Phonon Anharmonicity and Spin–Phonon Coupling in CrI 3
We report on the far-infrared, temperature-dependent optical properties of a CrI 3 transition metal halide single crystal, a van der Waals ferromagnet (FM) with a Curie temperature of 61 K. In addition to the expected phonon modes determined by the crystalline symmetry, the optical reflectance and transmittance spectra of CrI 3 single crystals show many other excitations as a function of temperature as a consequence of the combination of a strong lattice anharmonicity and spin–phonon coupling. This complex vibrational spectrum highlights the presence of entangled interactions among the different degrees of freedom in CrI 3 .
Understanding the Effect of Electron Beam Melting Scanning Strategies on the Aluminum Content and Materials State of Single Ti-6Al-4V Feedstock
Research on the additive manufacturing of metals often neglects any characterization of the composition of final parts, erroneously assuming a compositional homogeneity that matches the feedstock material. Here, the composition of electron-beam-melted Ti-6Al-4V produced through three distinct scanning strategies (linear raster and two point melting strategies, random fill and Dehoff fill) is characterized both locally and globally through energy-dispersive spectroscopy and quantitative chemical analysis. As a result of the different scanning strategies used, differing levels of preferential vaporization occur across the various parts, leading to distinct final compositions, with extremes of ~5.8 wt.% Al and ~4.8 wt.% Al. In addition, energy-dispersive spectroscopy composition maps reveal specific features in both the XY and XZ planes (with Z being the build direction) as a result of local inhomogeneous preferential vaporization. The subsequent change in composition significantly modifies the materials’ state of parts, wherein parts and local regions with higher aluminum contents lead to higher hardness levels (with a ~50 HV difference) and elastic property values and vice versa. While varying scan strategies and scan parameters are known to modify the microstructure and properties of a part, the effect on composition cannot, and should not, be neglected.
CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer
We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H c2 (34.06 T boost in H c2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.