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NASA NTRS1977

Fine energy resolution survey of the sky with a germanium gamma-ray spectrometer

A fine-energy-resolution survey (38 to 2700 keV) of the sky has been performed from a spinning polar-orbiting satellite with a cooled germanium spectrometer. The measurements, performed with a fast time resolution (32 ms), permit one to analyze the energy spectra from repeated noon-midnight orbits in selected portions of the local daytime or nighttime sky. During the initial period of the experiment, the sky was surveyed in two broad intervals spanning the galactic plane at longitudes of approximately 255 to 328 deg and 99 to 168 deg, respectively. In the former interval a significant increase in counting rate was observed when the spectrometer viewed the galactic plane. Locally generated backgrounds were removed from the galactic-plane spectrum by subtracting, on a spin-for-spin basis, the contribution measured at a viewing direction with a comparable declination north of the celestial equator. The net spectra from the galactic plane have been examined for evidence of gamma-ray lines. The possible presence of lines near 1121 and 1369 keV emitted from the galactic plane over the galactic longitudinal interval approximately 255 deg to approximately 328 deg is suggested by the data, but better statistics are needed to establish their existence firmly. Comparisons are made with previously reported extraterrestrial lines with assumed normalizations made for the different viewing directions in the two experiments.

Imhof, W. L.↗

NASA NTRS1976

Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

Bratt, P. R.↗

NASA NTRS1978

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

Bratt, P. R.↗

NASA NTRS1978

High-energy proton radiation damage of high-purity germanium detectors

Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.

Pehl, R. H.↗

NASA NTRS1979

Gallium-doped germanium, evaluation of photoconductors, part 1

Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

Moore, W. J.↗

NASA NTRS1981

Radiation damage of the HEAO C-1 germanium detectors

The effects of radiation damage from proton bombardment of the four HEAO C-1 high purity germanium detectors have been measured and compared to predictions. Because of the presence of numerous gamma-ray lines in the detector background spectra and because of the relatively long exposure time of the HEAO 3 satellite to cosmic-ray and trapped protons, it has been possible to measure both the energy and time dependence of radiation damage. After 100 d in orbit, each of the four detectors has been exposed to approximately 3 x 10 to the 7th protons/sq cm, and the average energy resolution at 1460 keV had degraded from 3.2 keV fwhm to 8.6 keV fwhm. The lines were all broadened to the low energy side although the line profile was different for each of the four detectors. The damage-related contribution to the degradation in energy resolution was found to be linear in energy and proton influence.

Mahoney, W. A.↗

NASA NTRS1981

Germanium accumulation-mode charge-injection-device process

Gallium doped germanium is suitable for applications in the detection of far infrared radiation. Measurements were made on experimental photoconductors (PCs), accumulation mode charge injection devices (AMCIDs), and the SSPC (a switched, sampled PC alternative to the AMCID). The results indicate that the SSPC, which had a responsivity near 1.5 amp/watt, is desirable for use in two dimensional detector arrays.

Moore, T. G.↗

NASA NTRS1982

Thermophysical properties of germanium for thermal analysis of growth from the melt

The thermal diffusivity of Ge has been measured over a temperature range from 300 C to 1010 C which includes values for the melt. Specific heat has been measured from room temperature to 727 C. Thermal conductivity has been calculated over the same temperature range as the diffusivity measurements. These data are reported along with the best values from the literature for the other parameters which are required to calculate the temperature and convective fields for the growth of germanium by the Bridgman method. These parameters include the specific heat, the viscosity, the emissivity, and the density as a function of temperature.

Crouch, R. K.↗

NASA NTRS1983

Three holes bound to a double acceptor - Be(+) in germanium

A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single crystals. This new center, Be(+), has a hole binding energy of about 5 meV and is only present when free holes are generated by ionization of either neutral shallow acceptors or neutral Be double acceptors. The Be(+) center thermally ionizes above 4 K. It disappears at a uniaxial stress higher than about a billion dyn/sq cm parallel to (111) as a result of the lifting of the valence-band degeneracy.

Haller, E. E.↗

NASA NTRS1984

A position-sensitive germanium detector for gamma-ray astronomy

The critical problem in high-resolution cosmic gamma-ray spectroscopy in the energy range from 0.02 to 10 MeV is the limited spectral sensitivity of the detectors used. This results from the small effective area of the detectors and the high background noise due to induced radioactivity and scattering in the detectors' high-energy particle environment. The effective area can be increased by increasing the number of detectors, but this becomes prohibitive because of the size and expense of the resulting instrument. We have taken a new approach: a segmented large-volume germanium gamma-ray detector which can effectively discriminate against internal background yet maintain the high spectral resolution and efficiency of conventional coaxial Ge detectors. To verify this concept, a planar detector divided into two segments has been fabricated and laboratory measurements agree well with Monte Carlo calculations. A large coaxial detector which will be divided into five segments is being built using the techniques developed for the planar detector. Monte Carlo calculations show that the sensitivity (minimum detectable flux) of the segmented coaxial detector is a factor of 2-3 better than conventional detectors because of the reduction in the internal background.

Varnell, L. S.↗

NASA NTRS1984

Segmentation and pulse shape discrimination techniques for rejecting background in germanium detectors

The possibility of rejecting the internal beta-decay background in coaxial germanium detectors by distinguishing between the multi-site energy losses characteristic of photons and the single-site energy losses of electrons in the range 0.2 - 2 MeV is examined. The photon transport was modeled with a Monte Carlo routine. Background rejection by both multiple segmentation and pulse shape discrimination techniques is investigated. The efficiency of a six 1 cm-thick segment coaxial detector operating in coincidence mode alone is compared to that of a two-segment (1 cm and 5 cm) detector employing both front-rear coincidence and PSD in the rear segment to isolate photon events. Both techniques can provide at least 95 percent rejection of single-site events while accepting at least 80 percent of the multi-site events above 500 keV.

Roth, J.↗

NASA NTRS1986

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗

NASA NTRS1986

A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride

An X-ray and gamma-ray analysis technique has been developed which makes it possible to observe the melt solid interface during semiconductor crystal growth in a Bridgman furnace. Experiments have been carried out to observe the interface movement and shape in germanium as well as in lead tin telluride by means of the new method, and the results are discussed in detail. X-ray and gamma-ray radiographs of the melt-solid interfaces in the two semiconductor crystal specimens, are provided.

Barber, P. G.↗

NASA NTRS1987

Calibration of Germanium Resistance Thermometers

Largely completed thermometer-calibration cryostat and probe allows six germanium resistance thermometers to be calibrated at one time at superfluid-helium temperatures. In experiments involving several such thermometers, use of this calibration apparatus results in substantial cost savings. Cryostat maintains temperature less than 2.17 K through controlled evaporation and removal of liquid helium from Dewar. Probe holds thermometers to be calibrated and applies small amount of heat as needed to maintain precise temperature below 2.17 K.

Ladner, D.↗

NASA NTRS1986

Characterization of NTD germanium and ion-implanted Si bolometers at 0.3K and 0.1K

Bolometer elements were built and tested using NTD germanium and ion-implanted Si thermometer elements. The thermal links were made using aluminum wires and NbC(x)N(y) coated carbon fibers. The temperature dependence of the detector resistance, lead thermal conductivity, and heat capacity were measured. The dependence of the detector resistance on applied electric field was also measured. This, combined with the current-voltage curve for the detector, allowed the calculation of the detector responsivity. Known amounts of energy were deposited into the detector by allowing X-rays from the decay of Fe-55 to be thermalized in the detector. In the best-measured case, the predicted pulse height/measured height was 1.04 + or - .05. The noise at frequencies above 25 Hz in the NTD Ge was near that predicted by thermodynamics. The noise below 25 Hz has a 1/f character and may be in the carbon fiber/bolometer junction. The implanted detectors show some 1/f noise which depends on the total thermometer volume. Comparison between noise measurements and theory will be presented.

Moseley, H.↗

NASA NTRS1988

Analog/Digital System for Germanium Thermometer

Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

Woodhouse, Christopher↗

NASA NTRS1986

Properties of silicon-germanium thermoelectric alloys with additives

The paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.

Mclane, George↗

NASA NTRS1989

Ductile-regime turning of germanium and silicon

Single-point diamond turning of silicon and germanium was investigated in order to clarify the role of cutting depth in coaxing a ductile chip formation in normally brittle substances. Experiments based on the rapid withdrawal of the tool from the workpiece have shown that microfracture damage is a function of the effective depth of cut (as opposed to the nominal cutting depth). In essence, damage created by the leading edge of the tool is removed several revolutions later by lower sections of the tool edge, where the effective cutting depth is less. It appears that a truly ductile cutting response can be achieved only when the effective cutting depth, or critical chip thickness, is less than about 20 nm. Factors such as tool rake angle are significant in that they will affect the actual value of the critical chip thickness for transition from brittle to ductile response. It is concluded that the critical chip thickness is an excellent parameter for measuring the effects of machining conditions on the ductility of the cut and for designing tool-workpiece geometry in both turning and grinding.

Blake, Peter N.↗