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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Thickness-dependent transport in epitaxial CaIrO 3 perovskite thin films

The coexistence of strong electron–electron correlation and strong spin–orbit coupling makes CaIrO 3 a promising candidate for the exploration of emergent phenomena in thin film form. Here, we have realized epitaxial CaIrO 3 films on (La 0.18 Sr 0.82 )(Al 0.59 Ta 0.41 )O 3 single crystal substrates with excellent crystallinity and thicknesses ranging from 3 to 32 nm. Electronic properties range from semiconducting to insulating behavior as a function of decreasing thickness and correlate with increased tetragonal distortion due to substrate-imposed strain. Hall effect measurements indicate that conduction is dominated by electron-type carriers at room temperature but crosses over to transport dominated by hole-like carriers at lower temperatures. Longitudinal magnetoresistance measurements reveal both a quadratic Lorentz dependence and an additional positive component in the field dependence that cannot be explained purely by semi-classical orbital magnetoresistance effects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tests and Field Mapping of RODM01 Septum Magnet

RODM01 is a septum magnet located in the extraction region of LANSCE Proton Storage Ring. Tests and field mapping of RODM01 Set #2 were performed on 02/04/2020 by members of AOT-MDE, AOT-RFE and AOT-AE Groups. Setups of test and mapping are presented. Magnetic field measurements was performed using Hall probe. Results of measurements are almost identical to that of RODM01 Set #1 performed in July 2018. Trim coil current of magnet selected to be as - 9.28 A.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Correlated Insulating Behavior in Infinite-Layer Nickelates

Unlike their cuprate counterparts, the undoped nickelates are weak insulators without long-range antiferromagnetic order. Identifying the origin of this insulating behavior, found on both sides of the superconducting dome, is potentially a crucial step in the development of a coherent understanding of nickelate superconductivity. In this work, we study the normal-state resistivity of infinite-layer nickelates using high magnetic fields to suppress the superconductivity and examine the impact of disorder and doping on its overall temperature ( T ) dependence. In superconducting samples, the resistivity of Nd- and La-based nickelates continues to exhibit weakly insulating behavior with a magnitude and functional form similar to that found in underdoped electron-doped cuprates. We find a systematic evolution of the insulating behavior as a function of nominal hole doping across different rare-earth families, suggesting a pivotal role for strong electron interactions, and uncover a correlation between the suppression of the resistivity upturn and the robustness of the superconductivity. By contrast, we find very little correlation between the level of disorder and the magnitude and onset temperature of the resistivity upturn. Combining these experimental observations with previous Hall effect measurements on these two nickelate families, we consider various possible origins for this correlated insulator behavior and its evolution across their respective phase diagrams.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Self-field measurements of an HTS twisted stacked-tape cable conductor

For a twisted stacked-tape cable (TSTC) conductor composed of REBCO tapes, self-field measurements were conducted with Hall sensors. In the measurements, a 650 mm diameter single turn coil wound with the TSTC conductor, which was made with 48 REBCO tapes whose width was 6 mm, was utilized as a test sample. Based on the measurement results, the current distribution of the TSTC conductor was investigated with analytical models. The analytical results indicate the current distribution of the TSTC is uniform under the condition that the operating current is 10 kA and the sample temperature is approximately 30 K. On the other hand, the current distribution is not uniform at the excitation and the degauss of the TSTC conductor with the ramp rate of 50 A/s.

Obana, T.↗
DOE OSTI2020

Topological insulator-based high efficiency switching of magnetic unit, method and applications

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal Hall conductivity of electron-doped cuprates

Measurements of the thermal Hall conductivity in hole-doped cuprates have shown that phonons acquire chirality in a magnetic field both in the pseudogap phase and in the Mott insulator state. The microscopic mechanism at play is still unclear. A number of theoretical proposals are being considered including skew scattering of phonons by various defects, the coupling of phonons to spins, and a state of loop-current order with the appropriate symmetries, but more experimental information is required to constrain theoretical scenarios. Here we present our study of the thermal Hall conductivity κ xy in the electron-doped cuprates Nd 2–x Ce x CuO 4 and Pr 2–x Ce x CuO 4 for dopings across the phase diagram, from x = 0 in the insulating antiferromagnetic phase up to x = 0.17 in the metallic phase above optimal doping. We observe a large negative thermal Hall conductivity at all dopings in both materials. Since heat conduction perpendicular to the CuO 2 planes is dominated by phonons, the large thermal Hall conductivity we observe in electron-doped cuprates for a heat current in that direction must also be due to phonons, as in hole-doped cuprates. However, the degree of chirality, measured as the ratio |κ xy /κ xx | where κ xx is the longitudinal thermal conductivity, is much larger in the electron-doped cuprates. Here, we discuss various factors that may be involved in the mechanism that confers chirality to phonons in cuprates, including short-range spin correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Revisiting excitation gaps in the fractional quantum Hall effect

Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples open the possibility of a better quantitative understanding of this important issue. Here we present what we believe to be accurate theoretical gaps including the effects of finite width and Landau level (LL) mixing. While theory captures the width dependence, there still remains a deviation between the calculated and the measured gaps, presumably caused by disorder. It is customary to model the experimental gaps of the n/(2n ± 1) states as Δ n/(2n+1) = Ce 2 /[(2n ± 1)ϵl]-Γ, where ϵ is the dielectric constant of the background semiconductor and l is the magnetic length; the first term is interpreted as the cyclotron energy of composite fermions and Γ as a disorder-induced broadening of composite-fermion LLs. Fitting the gaps for various fractional quantum Hall states, we find that Γ can be nonzero even in the absence of disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Noninvasive THz-TDS measurements of plasma bounded and optically shielded by Hall thruster wall material

We experimentally demonstrate the capability of terahertz time-domain spectroscopy (THz-TDS) to noninvasively measure the electron density and collision frequency of plasma bounded and optically shielded by Hall thruster wall material. This paper augments the standard THz-TDS plasma diagnostic theory to account for plasma boundaries, presents THz optical property measurements of three different wall materials (grades M, M26, and HP boron nitride composite), and provides electron density and collision frequency measurements of an inductively coupled plasma bounded and optically shielded by each wall material. We find that the electron density measurement capability is weakly impacted by the boundaries, whereas the electron collision frequency measurement capability is strongly reduced by the boundaries. Here, the bounded plasma electron density trends deviate substantially from those of the unbounded plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Measured Potential Profile in a Quantum Anomalous Hall System Suggests Bulk-Dominated Current Flow

Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well-described by solution of Laplace's equation, assuming spatially-uniform conductivity, suggesting non-equilibrium current flows through the two-dimensional bulk. Extrapolation suggests that at even lower temperatures current may still flow primarily through the bulk rather than, as had been assumed, through edge modes. In conclusion, an argument for bulk current flow previously applied to quantum Hall systems supports this picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

α Irradiation Response on the Electronic Transport Properties of p -B 12 P 2

B 12 P 2 , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport properties of B 12 P 2 has not been studied. We report electrical transport measurements on B 12 P 2 after α irradiation. The temperature-dependent Hall effect was measured on p-type B 12 P 2 after successive α irradiation from 210 Po over a fluence range of 1 × 10 11 –1 × 10 13 α/cm 2 to test for self-healing of B 12 P 2 to α bombardment. Prior to irradiation, B 12 P 2 displayed electrical transport characteristics of both hopping and impurity/defect band conduction due to background impurities and growth-induced defects. Fluences of 5 × 10 12 α/cm 2 or greater caused a decrease in the hole mobility and an increase in defect band conduction, suggesting defect accumulation in B 12 P 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

A15 phase Ta 3⁢ Sb thin films: Direct synthesis, charge transport, and spin-orbit torque

Ta 3 ⁢Sb is one of the A15 compounds that have been predicted to have giant spin Hall conductivities due to the gapped Dirac-like band crossings in their electronic structures. We use co-sputtering to directly synthesize thin films of Ta 3 ⁢Sb and identify a large window of Ta:Sb flux ratio that permits the formation of single-phase A15 structure. These sputtered films have an actual Ta:Sb atomic ratio of 4:1, as determined from Rutherford backscattering spectrometry. Their high resistivity, at the Mott-Ioffe-Regel limit, suggests that the electron mean free path is comparable to interatomic distances. From harmonic Hall and spin-torque ferromagnetic resonance measurements, the intrinsic spin Hall conductivity of thin film Ta 3 ⁢Sb is estimated to be in the range of −526 to −1230⁢(ℏ/𝑒)S/cm at 300 K, lower in magnitude than the predicted value of −1400⁢(ℏ/𝑒)S/cm . Here, first-principles calculations of the electronic structure show that the discrepancy is consistent with an increase of the Fermi level due to the nonideal stoichiometry needed to stabilize the A15 structure.

Density functional theory↗
DOE OSTI2023

A Flexible Field Mapping System for Accelerator Magnets

Magnetic field mapping is a fundamental magnetic measurement method that typically uses Hall and NMR sensors. In magnet measurement facilities, such systems are likely used in various configurations suitable for a specific task at hand. To address this diversity, the authors developed a flexible field mapping system capable of being configured and tailored to each particular measurement case. Further, the system needs to address the variability introduced by differences in sensors and their readout systems, probe positioning systems, power supply systems, and required mapping geometry (mapping space and grid, measurement steps and sequences). Although the discussed field mapping systems range from a self-propelled multi-sensor mapper of a large detector magnet to a single 3D Hall sensor system to scan a small permanent magnet, they were all built with the same core mapping system. The variability present in field mapping systems, the measurement system architecture addressing this variability, as well as examples of several field mapping systems built in this architecture are presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

A Flexible Field Mapping System for Accelerator Magnets

Magnetic field mapping is a fundamental magnetic measurement method that typically uses Hall and NMR sensors. In magnet measurement facilities, such systems are likely used in various configurations suitable for a specific task at hand. To address this diversity, the authors developed a flexible field mapping system capable of being configured and tailored to each particular measurement case. The system needs to address the variability introduced by differences in sensors and their readout systems, probe positioning systems, power supply systems and in required mapping geometry (mapping space and grid, measurement steps and sequences). Although the discussed field mapping systems range from a self-propelled, multi-sensor mapper of a large detector magnet to a single 3D Hall sensor system to scan a small permanent magnet, they were all built with the same core mapping system. The variability present in field mapping systems and the measurement system architecture addressing this variability, as well as examples of several field mapping systems built in this architecture are presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Second-harmonic signature of chiral spin structures in W/Pt/Co heterostructures with tunable magnetic anisotropy

Abstract Second-harmonic Hall voltage (SHV) measurement method has been widely used to characterize the strengths of spin–orbit torques (SOTs) in heavy metal/ferromagnet thin films saturated in the single-domain regime. Here, we show that the magnetic anisotropy of a W/Pt/Co trilayer can be robustly tuned from in-plane to out-of-plane by varying W, Pt, or Co thicknesses. Moreover, in samples with easy-cone anisotropy, SHV measurements exhibit anomalous ‘humps’ in the multidomain regime accessed by applying a nearly out-of-plane external magnetic field. These hump features can only be explained as a result of the formation of Néel-type domain walls, efficiently driven by nevertheless small SOTs in this double heavy metal heterostructure with canceling spin Hall angles.

Physics↗
DOE OSTI2023

Measurement of the Deeply Virtual Neutral Pion Electroproduction Cross Section off the Proton at 10.6 GeV using the CLAS12 Detector

Deeply virtual exclusive reactions provide unique channels to study both transverse and longitudinal properties of the nucleon simultaneously, allowing for a 3D image of nucleon substructure. This presentation will discuss work towards extracting an absolute cross section for one such exclusive process, deeply virtual neutral pion production, using 10.6 GeV electron scattering data off a proton target from the CLAS12 experiment in Jefferson Lab Hall B. This measurement is important as exclusive meson production has unique access to the chiral odd Generalized Parton Distributions, and is also a background for other exclusive processes such as Deeply Virtual Compton Scattering, making the determination of this cross section crucial for other exclusive analyses.

Johnston, Robert↗
DOE OSTI2022

Measurement of H(e,e’) and D(e,e’) Cross-Sections for Bloom-Gilman Quark-Hadron Duality Study

The E12-10-002 experiment which ran in 2018 in Hall C at the Thomas Jefferson National Accelerator Facility measured the inclusive electron scattering cross-sections for hydrogen and deuterium. This was the first experiment conducted with the new Super High-Momentum Spectrometer and accompanying instrumentation. These measurements extend the previous Hall C measurements up to Q2 = 16 GeV2. This dissertation presents the analyses of the new detectors and shows the preliminary results for F2 structure function and the study of quark-hadron duality in the four nucleon-resonance regions.

Sun, Abel↗
DOE OSTI2022

Effective Mass from Seebeck Coefficient

Abstract Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced here is the Seebeck effective mass, n H is the charge carrier concentration measured by the Hall effect ( n H = 1/ eR H , R H is Hall resistance) in 10 20 cm −3 , T is the absolute temperature in K, S is the Seebeck coefficient, and k B / e = 86.3 μV K −1 . This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.

Snyder, Gerald Jeffrey↗