Search NASA⌕ Search

SEARCH · Search NASA

Results for “Indium”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Understanding the unique optical and vibrational signatures of sequential infiltration synthesis derived indium oxyhydroxide clusters for CO 2 absorption

Sequential infiltration synthesis (SIS) is a vapor phase synthesis technique with potential to exert precise control over metal oxyhydroxide incorporation into polymer scaffolds. Here, we observe strong size-dependent properties of InO x (OH) y few-atom clusters deposited with variable SIS cycle numbers within a polymethylmethacrylate (PMMA) matrix. Infrared spectroscopy and ultraviolet-visible absorption spectroscopy reveal that the metal atom coordination and optical properties of the clusters depend on the number of SIS cycles performed as well as the choice of processing parameters. The incorporation of indium oxyhydroxide in PMMA via SIS presents an opportunity to improve the CO 2 absorption capacity and gas selectivity of inexpensive polymers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Spatiotemporal refraction of light in an epsilon-near-zero indium tin oxide layer: frequency shifting effects arising from interfaces

When light travels through a medium in which the refractive index is rapidly changing with time, the light will undergo a shift in its frequency. Significant frequency shifting effects have recently been reported for transparent conductive oxides. These observations have been interpreted as emerging from temporal changes to the propagation phase in a bulk medium resulting from temporal variations in the refractive index. It is an effect referred to as temporal refraction. Here, we show that the frequency shift in an epsilon-near-zero layer made of indium tin oxide originates not only from this bulk response but includes a significant effect resulting from temporal changes to the spatial boundary conditions. This boundary effect can lead to a dominant, opposing shift to the bulk effect for certain angles. Hence, this process gives rise to a frequency shift that can be tailored through the angle, decoupling the amplitude and phase modulation.

Bohn, Justus (ORCID:0000000214376450)↗
DOE OSTI2023

On the correlation between the stress exponent for creep determined by nanoindentation and the mechanism of action enabling stress relief in indium

Instrumented indentation performed at room temperature with a Berkovich and 10 μm radius sphere has been used to measure the stress exponent for creep before and after the strain burst observed in well-annealed, high-purity indium. Before the strain burst, the measured values are successfully rationalized using a new model based on stress directed diffusional flow along the interface between the indenter tip and test specimen. After the strain burst, the measured stress exponents are found to be representative of dislocation glide and climb assisted glide. Here these results are compared and contrasted to the previous experimental investigations and modeling efforts of Feng et al., Lucas et al., and Li et al. Collectively, the experimental observations and rationalization presented here provide significant new insight into the mechanisms of action that control the competition for stress relief in small, constrained volumes of crystalline metals subjected to high homologous temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Silver nanowire-indium zinc oxide composite flexible transparent conducting electrodes made by spin-coating and photonic curing

Flexible transparent conducting electrodes (TCE) play a critical role in modern technologies. Eliminating the high-temperature annealing of vacuum- or solution-deposited films will increase production throughput and lower the cost of the final products. Photonic curing uses intense pulses of broadband light to induce material transformations instead of heat. In this work, we combine solution deposition and photonic curing, replacing thermal annealing, to fabricate flexible composite TCE films on plastic polyethylene terephthalate (PET) substrates. The composite TCE films are composed of spin-coated silver nanowire-indium zinc oxide layers. Further, the TCE films’ electrical, optical, and morphological properties are investigated and compared to those of commercially available PET/TCE. A sheet resistance of 15 Ω/sq and an average transmittance from 400 – 700 nm of 77% are achieved with the spin-coated and photonic-cured composite flexible TCE films.

14 SOLAR ENERGY↗
DOE OSTI2026

Bandgap Engineering of Ga 2 O 3 by MOCVD Through Alloying with Indium

Ga 2 O 3 and In 2 O 3 are vital semiconductors with current and future electronic device applications. Here, we study the alloying of In 2 O 3 and Ga 2 O 3 (IGO) and the associated changes in structure, morphology, band gap, and electrical transport properties. Undoped films of IGO were deposited on sapphire substrates with varying indium (In) percentage from zero to 100% by metal-organic chemical vapor deposition (MOCVD). Some films were annealed in H 2 to induce electrical conductivity. The measurements showed the optical band gap decreased by adding In; this was confirmed by density functional (DFT) calculations, which revealed that the nature of the valence band maximum and conduction band minimum strongly relate to the chemistry and that the band gap drops by adding In. The as-grown films were highly resistive except for pure In 2 O 3 , which possesses p-type conductivity, likely arising from In vacancy-related acceptor states. N-type conductivity was induced in all films after H-anneal. DFT calculations revealed that the presence of In decreases the electron effective mass, which is consistent with the electrical transport measurements that showed higher electron mobility for higher In percentage. The work revealed the successful band gap engineering of IGO and the modification of its band structure while maintaining high-quality films by MOCVD.

36 MATERIALS SCIENCE↗
NASA NTRS1970

Visible light electroluminescent diodes of indium-gallium phosphide

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Clough, R.↗
NASA NTRS1970

Technique for depositing silicon dioxide on indium arsenide improves adhesion

Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.

Source record↗
NASA NTRS1972

Indium sealing techniques.

Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.

Hochuli, U.↗