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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Generation of Intense Low-Divergence Isolated Soft-X-Ray Attosecond Pulses in a Gas-Filled Waveguide Using Three-Color Synthesized Laser Pulses

Isolated attosecond pulses (IAPs) in the soft-x-ray (SXR) region have been successfully produced via high-order harmonic generation in a gas medium at several laboratories, but pulse energies are much lower compared to the IAPs in the extreme ultraviolet. Here, we show that in a gas-filled hollow waveguide, an efficient gating method using a few-cycle three-color synthesizer is able to generate stronger SXR IAPs. We show that an 104-as IAP in the SXR region (central energy of 210 eV) with a higher pulse energy (0.9 nJ) and a lower divergence (within 1.5 mrad) can be generated with a three-color laser beam for input pulse energy at 0.62 mJ, under the condition of optimal gas pressure and waveguide length. The enhancement of the IAP is attributed to favorable phase matching of SXR high harmonics caused by the evolution of the three-color waveform during its propagation in the waveguide, which can be understood by analyzing the time shift of the waveform due to the interplay of the waveguide mode, atomic dispersion, and plasma dispersion. We check that the gating method is quite robust with respect to the phase jitter in the waveform. The advantage of this method is further demonstrated by comparing the generation of SXR high harmonics and attosecond pulses with two other schemes: the three-color waveform in a gas cell and a previously optimized two-color waveform in a gas-filled waveguide.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Improved coherence in optically defined niobium trilayer-junction qubits

Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However existing niobium processes are limited by more complicated fabrication methods and higher losses than now-standard aluminum junctions. Combining recent trilayer fabrication advancements, methods to remove lossy dielectrics and modern superconducting qubit design, we revisit niobium trilayer junctions and fabricate all-niobium transmons using only optical lithography. We characterize devices in the microwave domain, measuring coherence times up to $62~\mu$s and an average qubit quality factor above $10^5$: much closer to state-of-the-art aluminum-junction devices. We find the higher superconducting gap energy also results in reduced quasiparticle sensitivity above $0.16~$K, where aluminum junction performance deteriorates. Our junction process is readily applied to standard optical-based foundry processes, opening new avenues for direct integration and scalability, and paves the way for higher-temperature and higher-frequency quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

GaN thermal transport limited by the interplay of dislocations and size effects

Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k is observed in samples with large dislocation densities and at lower temperatures where k anisotropy is also observed. Combination of experiment and theory give insights into the interplay of thermal resistance mechanisms limiting GaN functionalities and suggest pathways for tuning k via defect engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Built-in electric field control of magnetic coupling in van der Waals semiconductors

Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van der Waals (vdW) 2D magnetic semiconductor via a built-in electric field generated by the adsorption of superatomic ions. Using first-principles calculations, we predict a significant enhancement of ferromagnetic coupling and a great change of magnetic anisotropy in 2D semiconductors when they are sandwiched between superatomic cations and anions. The magnetic coupling is directly affected by the built-in electric field, which lifts the energy levels of mediated ligands' orbitals and enhances the superexchange interactions. Finally, these findings will be of interest for ionic gating controlled ferromagnets and magnetoelectronics based on vdW 2D semiconductors.

2-dimensional systems↗
DOE OSTI2023

Structure and magnetic properties of Ba 9 ⁢V 3 ⁢Te 15 with ferromagnetic spin chains

Here we report a ferromagnetic compound Ba9⁢V3⁢Te15 with quasi-one-dimensional (1D) spin chains. It was synthesized at high-temperature and high-pressure conditions and systematically investigated via structural, transport, magnetic and heat capacity measurements. Ba9⁢V3⁢Te15 mainly consists of trimerized face-sharing V⁢Te6 octahedral chains running along the 𝑐 axis, which are separated by a distance of 10.184⁢(8)⁢Å, thus demonstrating a strong 1D structural character. Ba9⁢V3⁢Te15 is a semiconductor with a band gap ∼128meV and undergoes a ferromagnetic transition with 𝑇C∼3.6K. Far above 𝑇C, the short-range spin orders due to the intrachain spin coupling have developed, which leads to a negative magnetoresistance effect, the deviation of magnetic susceptibility from the Curie-Weiss law and 𝑇1/2 dependence of magnetic heat capacity. Our results reveal that Ba9⁢V3⁢Te15 provides a good opportunity to study the intrinsic properties of a system with quasi-1D ferromagnetic spin chains.

1-dimensional spin chains↗
DOE OSTI2024

Extracting free-energy landscapes of AgMn spin glass thin films with 1/$f$ resistance fluctuations

The temperature-dependent 1/f noise is reported for AgMn (12 at. %) thin films with multiple thicknesses ranging from 15 to 80 nm. A significant increase in the noise magnitude occurs in the spin-glass state. Analysis of the temperature-dependent exponent provides information on the energy barrier distribution and height, which in turn are related to the spin-glass coherence length. Here, we compare our results with those obtained previously on CuMn (13.5 at. %) thin films with similar thicknesses. We observe a similar trend of the increase of the barrier height with respect to thickness, but with relatively lower values for the AgMn barriers as compared to CuMn.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electrical Control of Magnetic Phase Transition in a Type-I Multiferroic Double-Metal Trihalide Monolayer

Controlling magnetism of two-dimensional multiferroics by an external electric field provides special opportunities for both fundamental research and future development of low-cost electronic nanodevices. Here, we report a general scheme for realizing a magnetic phase transition in 2D type-I multiferroic systems through the reversal of ferroelectric polarization. First, based on first-principles calculations, we demonstrate that a single-phase 2D multiferroic, namely, ReWCl 6 monolayer, exhibits two different low-symmetric ($C_2$) phases with opposite in-plane electric polarization and different magnetic order. As a result, an antiferromagnetic-to-ferromagnetic phase transition can be realized by reversing the in-plane electric polarization through the application of an external electric field. These findings not only enrich the 2D multiferroic family, but also uncover a unique and general mechanism to control magnetism by electric field, thus stimulating experimental interest.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Scalable Circuit Cutting and Scheduling in a Resource-constrained and Distributed Quantum System

Despite quantum computing's rapid development, current systems remain limited in practical applications due to their limited qubit count and quality. Various technologies, such as superconducting, trapped ions, and neutral atom quantum computing technologies are progressing towards a fault tolerant era, however they all face a diverse set of challenges in scalability and control. Recent efforts have focused on multi-node quantum systems that connect multiple smaller quantum devices to execute larger circuits. Future demonstrations hope to use quantum channels to couple systems, however current demonstrations can leverage classical communication with circuit cutting techniques. This involves cutting large circuits into smaller subcircuits and reconstructing them post-execution. However, existing cutting methods are hindered by lengthy search times as the number of qubits and gates increases. Additionally, they often fail to effectively utilize the resources of various worker configurations in a multi-node system. To address these challenges, we introduce FitCut, a novel approach that transforms quantum circuits into weighted graphs and utilizes a community-based, bottom-up approach to cut circuits according to resource constraints, e.g., qubit counts, on each worker. FitCut also includes a scheduling algorithm that optimizes resource utilization across workers. Implemented with Qiskit and evaluated extensively, FitCut significantly outperforms the Qiskit Circuit Knitting Toolbox, reducing time costs by factors ranging from 3 to 2000 and improving resource utilization rates by up to 3.88 times on the worker side, achieving a system-wide improvement of 2.86 times.

Kan, Shuwen [Fordham University]↗
DOE OSTI2024

Benchmarking Optimizers for Qumode State Preparation with Variational Quantum Algorithms

Quantum state preparation involves preparing a target state from an initial system, a process integral to applications such as quantum machine learning and solving systems of linear equations. Recently, there has been a growing interest in qumodes due to advancements in the field and their potential applications. However there is a notable gap in the literature specifically addressing this area. This paper aims to bridge this gap by providing performance benchmarks of various optimizers used in state preparation with Variational Quantum Algorithms. We conducted extensive testing across multiple scenarios, including different target states, both ideal and sampling simulations, and varying numbers of basis gate layers. Our evaluations offer insights into the complexity of learning each type of target state and demonstrate that some optimizers perform better than others in this context. Notably, the Powell optimizer was found to be exceptionally robust against sampling errors, making it a preferred choice in scenarios prone to such inaccuracies. Additionally, the Simultaneous Perturbation Stochastic Approximation optimizer was distinguished for its efficiency and ability to handle increased parameter dimensionality effectively.

Kan, Shuwen [Fordham University]↗
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2020

Computationally Efficient AC Resistance Model for Stator Winding With Rectangular Conductors

The resistance of the electric machine’s windings is an important parameter when analyzing the machine’s performance, as conduction losses in the winding are often the largest loss component. However, this resistance changes with frequency due to the skin and proximity effects, making it challenging to accurately estimate these losses. In this article, a computationally efficient, general method of calculating the ac resistance of an electric machine winding with rectangular conductors is presented. The method uses a 1-D magnetoquasi-static model of the stator slot region to develop boundary transfer relations between individual turns. These relations are then used to create an impedance matrix from which the ac resistance can be calculated. This technique is more flexible than previous solutions since it can accommodate different winding configurations such as fractional-pitch windings. It is shown that a fractional-pitch winding has a lower ac resistance than a full-pitch winding. Finally, finite-element analysis simulations and experimental results are used to validate the proposed method.

42 ENGINEERING↗
DOE OSTI2021

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO 2 ) and 14-MeV fast neutrons up to a fluence of 2.2×10 13 cm -2 . Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.

42 ENGINEERING↗