Polycrystalline iron nitride films fabricated by reactive facing-target sputtering: Structure, magnetic and electrical transport properties
Structure, magnetic and electrical transport properties of the reactive sputtered iron nitride films fabricated at different substrate temperatures (T{sub s}) and nitrogen flow rates (F{sub N{sub 2}}) were investigated systematically. The single-phase polycrystalline {gamma}'-Fe{sub 4}N film was obtained at F{sub N{sub 2}} = 20 sccm and T{sub s} = 450 deg. C. The films are soft ferromagnetic at room temperature. The electrical resistivity ({rho}) of the films fabricated at different F{sub N{sub 2}} and T{sub s} decreases with the decreasing temperature, showing a metallic behavior. Meanwhile, a variety of magnetoresistance (MR) behaviors were observed depending on the applied magnetic field and measuring temperature. It can be deduced that the complex MR behaviors are dominated by Lorentz force, spin-orbit interaction, and weak localization effect.