Search NASA⌕ Search

SEARCH · Search NASA

Results for “Lifetime”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8

Predicting Cislunar Orbit Lifetimes from Initial Orbital Elements

The volume of space between Earth’s geosynchronous orbit out to the Moon’s sphere of influence, including the lunar Lagrange points, is crucial for the successful planning and execution of space missions, but not fully understood dynamically. This region is a part of cislunar space. Trajectories through cislunar space are influenced by the gravitational forces of the Sun, Earth, Moon, and other Solar System planets leading to typically unpredictable and chaotic trajectory behavior. It is therefore difficult to predict the stability of an trajectory through cislunar space from a set of initial conditions or orbital elements. We simulate one million cislunar orbits to train a self-organizing map (SOM) to cluster the trajectories and orbits into families based on how long they remain stable within the cislunar space. Using the trained SOM, we are able to predict the stable lifetime of a trajectory through cislunar space from a set of initial orbital elements to within an accuracy of 10% for 8% of simulated trajectories and within 50% for 43% of the simulated trajectories. Clustering in the SOM suggests that a variety of trajectory morphologies have similar lifetimes. Once trained, the SOM can predict the stable lifetime of a given cislunar trajectory within milliseconds. The methods developed in this work enable the rapid identification of stable cislunar orbits and trajectories that could be used for future space exploration. Moreover, the developed SOM method can generate orbital and trajectory lifetime estimates from minimal observational data, such as a single two line element, making it useful for early warning systems and large-scale sensor network operations.

79 ASTRONOMY AND ASTROPHYSICS↗

Laser measurements of the radiative lifetime of the B state of CN

A turnable dye laser was used to measure the radiative lifetime of the individual rotational levels of the B2 Sigma (+) state of CN. The radiative lifetime of the unperturbed rotational levels is 65.6 plus or minus 1.0 nsec. A longer radiative lifetime of 72 plus or minus 1 nsec is observed for the Kaon prime = 4 level of the B state. The measured values of the perturbed and unperturbed levels support the longer lifetimes for the A2 meson pion state of CN. The quenching cross section of the B2 Sigma state of CN is 41 plus or minus 20 Angstroms squared and is independent of the rotational energy of the B state.

Jackson, W. M.↗

Lifetimes for OH and OD electronic states with resonance transitions in the region between 1700 and 1950 A

The upper states of the OH and OD bands in the region between 1700 and 1950 A have been studied with a phase-shift radiative lifetime apparatus. Lifetimes varying from 1.8 to 2.9 ns have been found. Lifetimes for OH and OD are essentially the same, indicating that the upper states are likely to be depopulated via purely radiative processes under the present experimental conditions. Lifetimes have also been obtained for the C(2)Sigma(+) - A(2)Sigma(+) transition in OH and OD. These results are consistent with the preliminary analysis of Pryce (private communication) that the bands between 1700 and 1950 A in OH are partly due to the C(2)Sigma(+) - X(2)Pi sub i transition.

Smith, W. H.↗

Characterization of nonideal silicon in terms of lifetime and diffusion length

Experimental methods have been evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities which may be present in low-cost silicon intended for use in terrestrial flat-plate arrays. Results obtained with these methods have been compared for mutual consistency. The effects of a number of impurities on bulk lifetime were determined from steady-state photoconductivity, and solar cells fabricated from this material were characterized in terms of diffusion length using a penetrating light technique. Comparison was made with results obtained by others using photoconductivity decay. General agreement was found in terms of the hierachy of impurities to which the lifetime is sensitive. The utility of the steady-state photoconductivity method is established even in the presence of considerable trapping.

Othmer, S.↗

Residence lifetimes of 1.79- to 2.15-MeV protons in the equatorial region of the Jovian magnetosphere

The magnitude of the strong flow of 1.79-2.15 MeV protons away from the Jovian magnetic equator is used to estimate the residence lifetimes of these protons in the equatorial source region. The lifetime is approximately 1.2 x 10 to the 5th/(R - 5.8)-squared sec, where R is distance in Jovian radii from Jupiter's center to the equatorial region of interest. At Europa and Ganymede (but not at Io) this lifetime is 1-2 orders of magnitude shorter than sweepup lifetimes by the moons. The fluxes of these protons, integrated over the observed range from 6 to 40 Jovian radii, amount to 3 x 10 to the 23rd particles per second, per degree of longitude and carry away about 9 x 10 to the 17th ergs per second per degree.

Northrop, T. G.↗

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗

On the method of positron lifetime measurement

A fast-slow coincidence system was constructed for the measurement of positron lifetimes in material. The time resolution of this system was 270 ps for the (60)Co gamma rays. Positron lifetime spectra for 14 kinds of alkali halides were measured with this system. Two lifetime components and their intensities were derived from analyses of the lifetime spectra.

Nishiyama, F.↗

Lifetimes in Si CVD-epitaxial and other layers determined by spectral LBIC

In an effort to evaluate the minority carrier lifetimes in CVD-epitaxially grown layers in their dependence on the CVD process variables, the absolute spectral LBIC method was found to be the only available method capable of yielding both lifetime and surface recombination velocity in layers, independent of the resistivity of this layer or that of the substrate, as long as they are separated by a pn-junction. With this method, it was not only possible to determine the minority carrier lifetimes in as-grown epi-layers, but to observe their changes through the device fabrication processes. In addition, it was possible for the first time to determine the lifetimes in the alloy-regrowth p(+) layers of base high/low junction structures.

Wolf, M.↗

Index grating lifetime in photorefractive GaAs

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

Cheng, Li-Jen↗

Analysis of positron lifetime spectra in polymers

A new procedure for analyzing multicomponent positron lifetime spectra in polymers was developed. It requires initial estimates of the lifetimes and the intensities of various components, which are readily obtainable by a standard spectrum stripping process. These initial estimates, after convolution with the timing system resolution function, are then used as the inputs for a nonlinear least squares analysis to compute the estimates that conform to a global error minimization criterion. The convolution integral uses the full experimental resolution function, in contrast to the previous studies where analytical approximations of it were utilized. These concepts were incorporated into a generalized Computer Program for Analyzing Positron Lifetime Spectra (PAPLS) in polymers. Its validity was tested using several artificially generated data sets. These data sets were also analyzed using the widely used POSITRONFIT program. In almost all cases, the PAPLS program gives closer fit to the input values. The new procedure was applied to the analysis of several lifetime spectra measured in metal ion containing Epon-828 samples. The results are described.

Singh, Jag J.↗

Lifetime measurement of a collision complex using ion cyclotron double resonance - H2C6N2(+)

In the ion-molecule reaction between HC3N(+) and HC3N, the lifetime of the collision complex (H2C6N2+)-asterisk was long enough that ion cyclotron double-resonance techniques could be used to probe the distribution of the lifetimes of the collision complex. The mean lifetime of the collision complex at room temperature was measured as 180 microsec with a distribution ranging from 60 to 260 microsec as measured at the half-heights in the distribution. Lifetimes of this magnitude with respect to unimolecular dissociation allow for some stabilization of the collision complex by the slower process of infrared photon emission.

Anicich, Vincent G.↗

Positron lifetime measurements in chiral nematic liquid crystals

Positron lifetimes in the isotropic phases of chiral nematic liquid crystal formulations and their mixtures up to the racemic level were measured. The lifetime spectra for all liquid crystal systems were analyzed into three components. Although the individual spectra in the left- and right-handed components are identical, their racemic mixtures exhibit much larger orthopositronium lifetimes; these larger lifetimes indicate the presence of larger microvoids. This result is consistent with the reportedly higher thermodynamic stability and color play range in the racemic mixtures of chiral nematic liquid crystals.

Singh, Jag J.↗

Tropospheric hydroxyl concentrations and the lifetimes of hydrochlorofluorocarbons (HCFCs)

Three dimensional fields of modeled tropospheric OH concentrations are used to calculate lifetimes against destruction by OH for many hydrogenated halocarbons, including the CFC alternatives. The OH fields were taken from a 3-D chemical transport model (Spivakovsky et al. 1989) that accurately simulates the global measurements of methyl chloroform (derived lifetime of 5.5 years). The lifetimes of various hydro-halocarbons are shown to be insensitive to possible spatial variations and seasonal cycles. It is possible to scale the HCFC lifetimes to that of methyl chloroform or methane by using the ratio of the rate coefficients for reaction with OH at an appropriate temperature, about 277 K.

Prather, Michael J.↗

Minority carrier lifetime in indium phosphide

Transient photoluminescence is used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p- and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material.

Jenkins, Phillip↗

SIRTF thermal design modifications to increase lifetime

An effort was made to increase the predicted lifetime of the SIRTF dewar by lowering the exterior shell temperature, increasing the radiated energy from the vapor cooled shields and reconfiguring the vapor cooled shields. The lifetime increases can be used to increase the scientific return from the mission and as a trade-off against mass and cost. This paper describes the configurations studied, the steady state thermal model used, the analytical methods and the results of the analysis. Much of the heat input to the outside dewar shell is radiative heat transfer from the solar panel. To lower the shell temperature, radiative cooled shields were placed between the solar panel and the dewar shell and between the bus and the dewar shell. Analysis showed that placing a radiator on the outer vapor cooled shield had a significant effect on lifetime. Lengthening the distance between the outer shell and the point where the vapor cooled shields are attached to the support straps also improved lifetime.

Petrick, S. W.↗

A generic model for creep rupture lifetime estimation on fibrous ceramic composites

Because of their high strength and toughness at elevated temperatures, fiber reinforced ceramic composites such as SiC(f)/SiC and SiC(f)/Si3N4 have become candidates for next-generation turbine engine materials. A generic model is proposed for assessing the lifetime of this class of materials when subjected to long-term creep rupture conditions. This 2D model consists of interfacial cracks growing between square grains and rectangular fibers in the direction normal to the principal tensile stress axis. Neglecting transient effects, the total lifetime is derived based on the criterion that rupture is due to coalescence of adjacent cracks. Lifetime is inversely proportional to crack growth rate, volume fraction, and aspect ratio of the fibers; but extremely sensitive to the applied stress, due to the high power of the V-K(I) law. This lifetime estimation seems to be in fair agreement with the creep rupture data of SiC(w)/Si3N4 composite with 0 and 30 vol percent reinforcement tested at 1250 C in air. TEM performed on the postcrept specimens revealed that creep damage is predominantly in the form of microcracks at matrix/matrix as well as fiber/matrix interfaces, approximately in accord with the model simulation.

Chuang, Tze-Jer↗

Minority-carrier lifetime in InP as a function of light bias

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Yater, Jane A.↗

On the uncertainty in single molecule fluorescent lifetime and energy emission measurements

Time-correlated single photon counting has recently been combined with mode-locked picosecond pulsed excitation to measure the fluorescent lifetimes and energy emissions of single molecules in a flow stream. Maximum likelihood (ML) and least square methods agree and are optimal when the number of detected photons is large however, in single molecule fluorescence experiments the number of detected photons can be less than 20, 67% of those can be noise and the detection time is restricted to 10 nanoseconds. Under the assumption that the photon signal and background noise are two independent inhomogeneous poisson processes, we derive the exact joint arrival time probably density of the photons collected in a single counting experiment performed in the presence of background noise. The model obviates the need to bin experimental data for analysis, and makes it possible to analyze formally the effect of background noise on the photon detection experiment using both ML or Bayesian methods. For both methods we derive the joint and marginal probability densities of the fluorescent lifetime and fluorescent emission. the ML and Bayesian methods are compared in an analysis of simulated single molecule fluorescence experiments of Rhodamine 110 using different combinations of expected background nose and expected fluorescence emission. While both the ML or Bayesian procedures perform well for analyzing fluorescence emissions, the Bayesian methods provide more realistic measures of uncertainty in the fluorescent lifetimes. The Bayesian methods would be especially useful for measuring uncertainty in fluorescent lifetime estimates in current single molecule flow stream experiments where the expected fluorescence emission is low. Both the ML and Bayesian algorithms can be automated for applications in molecular biology.

Brown, Emery N.↗