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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

An Examination of Heavy Ion-Induced Persistent Visual Error Signatures in an Electronic Display Driver Integrated Circuit

Given the ubiquity of electronic displays integration in human-based systems, the impending mission critical, space-based applications of electronic displays will necessitate SEE assessment of components unique to electronic displays. A commercially available DDIC designed to drive a small form factor organic light emitting diode (OLED) was visually monitored during heavy ion irradiation to catalogue radiation induced persistent visual error signatures that require manual intervention (i.e., power cycling) to return to nominal function. These error signatures were able to be reproduced via modification of configuration register values utilizing the instruction set intended for interfacing a microcontroller with the DDIC. This approach to emulation of heavy-ion induced errors on a table-top assists with human perception-based criticality analysis as well as development of mitigation techniques.

Electronic Displays↗
DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗
DOE OSTI2024

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

Crystallographic defects↗
DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗
DOE OSTI2025

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.

36 MATERIALS SCIENCE↗
NASA NTRS2003

Microelectromechanical Systems (MEMS) Broadband Light Source Developed

A miniature, low-power broadband light source has been developed for aerospace applications, including calibrating spectrometers and powering miniature optical sensors. The initial motivation for this research was based on flight tests of a Fabry-Perot fiberoptic temperature sensor system used to detect aircraft engine exhaust gas temperature. Although the feasibility of the sensor system was proven, the commercial light source optically powering the device was identified as a critical component requiring improvement. Problems with the light source included a long stabilization time (approximately 1 hr), a large amount of heat generation, and a large input electrical power (6.5 W). Thus, we developed a new light source to enable the use of broadband optical sensors in aerospace applications. Semiconductor chip-based light sources, such as lasers and light-emitting diodes, have a relatively narrow range of emission wavelengths in comparison to incandescent sources. Incandescent light sources emit broadband radiation from visible to infrared wavelengths; the intensity at each wavelength is determined by the filament temperature and the materials chosen for the filament and the lamp window. However, present commercial incandescent light sources are large in size and inefficient, requiring several watts of electrical power to obtain the desired optical power, and they emit a large percentage of the input power as heat that must be dissipated. The miniature light source, developed jointly by the NASA Glenn Research Center, the Jet Propulsion Laboratory, and the Lighting Innovations Institute, requires one-fifth the electrical input power of some commercial light sources, while providing similar output light power that is easily coupled to an optical fiber. Furthermore, it is small, rugged, and lightweight. Microfabrication technology was used to reduce the size, weight, power consumption, and potential cost-parameters critical to future aerospace applications. This chip-based light source has the potential for monolithic fabrication with on-chip drive electronics. Other uses for these light sources are in systems for vehicle navigation, remote sensing applications such as monitoring bridges for stress, calibration sources for spectrometers, light sources for space sensors, display lighting, addressable arrays, and industrial plant monitoring. Two methods for filament fabrication are being developed: wet-chemical etching and laser ablation. Both yield a 25-mm-thick tungsten spiral filament. The proof-of-concept filament shown was fabricated with the wet etch method. Then it was tested by heating it in a vacuum chamber using about 1.25 W of electrical power; it generated bright, blackbody radiation at approximately 2650 K. The filament was packaged in Glenn's clean-room facilities. This design uses three chips vacuum-sealed with glass tape. The bottom chip consists of a reflective film deposited on silicon, the middle chip contains a tungsten filament bonded to silicon, and the top layer is a transparent window. Lifetime testing on the package will begin shortly. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 mm.

Tuma, Margaret L.↗
DOE OSTI2025

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗
NASA NTRS1975

Testing the linearity of response of gated photomultipliers in wide dynamic range laser radar systems

Laser radar data acquisition systems have been utilized in conjunction with a light emitting diode to evaluate photomultipliers for laser radar use. Light pulses with an exponential decay rate of approximately one decade per sixty microseconds, as well as other pulse shapes, were used to drive the tubes. Properties studied in the analog mode include nonlinearity at high output currents, transient behavior upon gating, gate holdoff, dynamic range limitations because of light-induced noise, and the effect of dynode gating on tubes without a focus grid. Some of these properties were also studied in the photon counting mode, along with single photoelectron pulse shape and afterpulsing. A brief description of the laser radar technique of atmospheric measurements is included.

Hunt, W. H.↗
NASA NTRS1994

Physiological and genetic characterization of plant growth and gravitropism in LED light sources

Among the many problems of growing plants in completely controlled environments, such as those anticipated for the space station and the CELSS program, is the need to provide light that is both adequate for photosynthesis and of proper quality for normal growth and development. NASA scientists and engineers have recently become interested in the possibility of utilizing densely packed, solid state, light emitting diodes (LED's) as a source for this light. Unlike more conventional incandescent or electrical discharge lamps, these sources are highly monochromatic and lack energy in spectral regions thought to be important for normal plant development. In addition, a recent observation by NASA scientist has suggested that infra-red LED's, that are routinely used as photographic safelights for plants grown in darkness, may interact with the ability of plants to detect gravity. In order to establish how plants respond to light from these LED light sources we carried out a series of experiments with known pigment mutants of the model mustard plant, Arabidopsis thaliana, growing in either a gravity field or on a clinostat to simulate a micro-gravity environment. Results indicate that only red light from the 665 nm LED's disrupts the ability of normal wildtype seedlings to detect a gravity stimulus. There was no consistent effect found for the far-red (735 nm) LED's or either of the infrared (880 nm or 935 nm) LED sources but both showed some effect in one or more of the genotypes tested. Of these five members of the phytochrome multigene family in Arabidopsis, only the phytochrome B pigment mutant (hy3) lacked the ability to detect gravity under all conditions. There was no effect of either micro-gravity (clinostat) or the infra-red LED's on the light induced inhibition of hypocotyl elongation. Measurements of the pigment phytochrome in oats also showed no photoconversion by 15 min irradiations with the infra-red LED's. We conclude that phytochrome B is required for the perception of gravity and that only red light is able to disrupt this perception. The infra-red LED's also do not appear to interact with gravity perception in Arabidopsis, but caution should be exercised if infra-red LED's are to be used as photographic safelights for these types of experiments.

Deitzer, Gerald F.↗
NASA NTRS2005

Effects of Cryogenic Temperatures on LEDs and Optical Fiber

Light Emitting Diodes (LEDs) may provide a simple, low powered light source for future space missions. However, the effects of cryogenic temperatures on LEDs and optical fibers are largely unknown. Tests were performed on a selection of commercially-available LEDs, with wavelengths varying from 468 nm to 950 nm, as well as "white" LEDs. Dry ice and liquid nitrogen (LN2) were used to bring the LEDs to the desired temperatures. The optical fibers were tested using a specially-machined brass cylinder that would allow the fibers to be cooled slowly and evenly in an LN2 dewer. An optical fiber coupled to a spectrometer was used to acquired spectra of a calibration light source (wavelength range 253-922 nm) at various temperatures. Examination of the LED spectra has shown several different effects, depending on the LED in question. Those with wavelengths above 590 nm tend to show a "blue shift" in their peak wavelength and an increase in intensity. Other LEDs developed secondary or tertiary peaks, or showed no peak shift at all, although all LEDs did show an increase in observed intensity. The optical fiber showed a slight non-uniform decrease in transmission as the temperature cooled to -195 C.

Pantel, Erica R.↗
NASA NTRS2005

Lighting the Way for Quicker, Safer Healing

Who's to say that a little light can t go a long way? Tiny light-emitting diode (LED) chips used to grow plants in space are lighting the way for cancer treatment, wound healing, and chronic pain alleviation on Earth. In 1993, Quantum Devices, Inc. (QDI), of Barneveld, Wisconsin, began developing the HEALS (High Emissivity Aluminiferous Light-emitting Substrate) technology to provide high-intensity, solid-state LED lighting systems for NASA Space Shuttle plant growth experiments. The company evolved out of cooperative efforts with the Wisconsin Center for Space Automation and Robotics (WCSAR) at the University of Wisconsin-Madison a NASA center for the Commercial Development of Space. Ronald W. Ignatius, QDI s president and chairman, represented one of WCSAR s industrial partners at the time. WCSAR was conducting research on light sources for promoting food growth within closed environments where humans would be present for a long duration, such as the Space Shuttle and the International Space Station. With the support of WCSAR, Ignatius experimented with LEDs, which provide high-energy efficiency and virtually no heat, despite releasing waves of light 10 times brighter than the Sun. Ignatius admits that some scientists involved in the project were skeptical at first, thinking that the idea of using LEDs to promote plant growth was far-fetched. The experiments, however, demonstrated that red LED wavelengths could boost the energy metabolism of cells to advance plant growth and photosynthesis. This finding prompted Ignatius to develop a line of LED products that emit the exact wavelength of light that plants use in photosynthesis. Our company gives credit to Dr. Ray Bula, the director of WCSAR, for having the foresight to go against the prevailing dogma of the time and design the first plant experiment using monochromatic light to grow lettuce plants, Ignatius proclaims. In 1989, Ignatius formed QDI to bring the salt grain-sized LEDs to market, and in October 1995, the light sources made their Space Shuttle flight debut on the second U.S. Microgravity Laboratory Spacelab mission (STS-73, Columbia)

Source record↗
DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1994

Optical-Fiber Leak Detector

Proposed optical-fiber sensor detects small changes in pressure in elastomeric O-ring or similar pressure seal, which may indicate deterioration of seal and interpreted as indications of incipient failure. According to concept, length of optical fiber embedded in seal. Light-emitting diode illuminates one end of fiber; photodetector measures intensity of light emerging from other end. Pressure-induced changes in seal bend fiber slightly, altering microbending-induced loss of light from fiber and alter intensity of light at photodetector. Change in intensity approximately proportional to change in pressure.

Workman, Gary L.↗
NASA NTRS1995

Technologies for Maintaining Animals in Space: Lighting, Air Quality, Noise, Food and Water

In the terrestrial environment multiple time cues exist. Zeitgebers have been identified and studied for their ability to convey temporal information to various physiological systems, In the microgravity experiment it is necessary to define time cues within the flight hardware prior to flight. During flight if changes in the Circadian System (e.g., mean, phase angle, period) occur this would indicate that the gravity vector is important relative to biological timing. This presentation is concerned with the environmental parameters to support rodent experiments in microgravity. The Animal Enclosure Module (AEM) provides solid food bars and water via lixits ad libitum. Flight animals (Sprague-Dawley rats, 60 - 300g) when compared to ground controls show similar growth (mean growth per day, g +/- SD; flight 5.4 +/- 2.0, ground 5.9 +/- 2.1). Current AEMs use incandescent lighting (approx. 5 Lux). Light emitting diode (LED) arrays are being developed that provide a similar light environment as cool-white fluorescent sources (40 Lux). In ground based tests (12L:12D), these arrays show normal circadian entrainment (Tau = 24.0) with respect to the behavioral responses. measured (drinking, eating, gross locomotor activity). A newly developed ultra high efficiency filter system can entrap all feces, urine and odors from 6 rats for 24 days. Maximum sound level exposure limits (per octave band 22 Hz - 179 kHz) have been established. The AEM will effectively support animal experiments in microgravity.

Winget, C. M.↗
NASA NTRS1995

Technologies For Maintaining Animals In Space: Lighting, Air Quality, Noise, Food And Water

In the terrestrial environment multiple time cues exist. Zeitgebers have been identified and studied for their ability to convey temporal information to various physiological systems. In the microgravity experiment it is necessary to define time cues within the flight hardware prior to flight. During flight if changes in the Circadian System (e.g., mean, phase angle, period) occur this would indicate that the gravity vector is important relative to biological timing. This presentation is concerned with the environmental parameter: to support rodent experiments in microgravity. The Animal Enclosure Module (AEM) provides solid food bars and water via lixits and ad libitum. Flight animals (Sprague-Dawley rats, 60 - 300g) when compared to ground controls show similar growth (mean growth per day g, plus or minus SD; flight 5.4 plus or minus 2.0, ground 5.9 plus or minus 2.1). Current AEMs use incandescent lighting (approx. 5 Lux). Light emitting diode (LED) arrays are being developed that provide a similar light environment as cool-white fluorescent sources (40 Lux). In ground based tests (12L:12D), these arrays show normal circadian entrainment (Tau = 24.0) with respect to the behavioral responses, measured (drinking, eating, gross locomotor activity). A newly developed ultra high efficiency filter system can entrap all feces, urine and odors from 6 rats for 24 days. Maximum sound level exposure limits (per octave band 22 Hz - 179 kHz) have been established. The AEM will effectively support animal experiments in microgravity.

Winget, C. M.↗
NASA NTRS2009

Solid State Light Evaluation in the U.S. Lab Mockup

This document constitutes the publication of work performed by the Space Human Factors Laboratory (mail code SF5 at the time) at the Johnson Space Center (JSC) in the months of June and July of 2000. At that time, the Space Human Factors Laboratory was part of the Space Human Factors Branch in the Flight Projects Division of the Space and Life Directorate. This report was originally to be a document for internal consumption only at JSC as it was seen to be only preliminary work for the further development of solid state illumination for general lighting on future space vehicles and the International Space Station (ISS). Due to funding constraints, immediate follow-on efforts were delayed and the need for publication of this document was overcome by other events. However, in recent years and with the development and deployment of a solid state light luminaire prototype on ISS, the time was overdue for publishing this information for general distribution and reference. Solid state lights (SSLs) are being developed to potentially replace the general luminaire assemblies (GLAs) currently in service in the International Space Station (ISS) and included in designs of modules for the ISS. The SSLs consist of arrays of light emitting diodes (LEDs), small solid state electronic devices that produce visible light in proportion to the electrical current flowing through them. Recent progressive advances in electrical power-to-light conversion efficiency in LED technology have allowed the consideration of LEDs as replacements for incandescent and fluorescent light sources in many circumstances, and their inherent advantages in ruggedness, reliability, and life expectancy make them attractive for applications in spacecraft. One potential area of application for the SSLs in the U.S. Laboratory Module of the ISS. This study addresses the suitability of the SSLs as replacements for the GLAs in this application.

Maida, James c.↗