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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

An unsupervised machine learning based approach to identify efficient spin-orbit torque materials

Materials with large spin–orbit torque (SOT) hold considerable significance for many spintronic applications because of their potential for energy-efficient magnetization switching. Unfortunately, most of the existing materials exhibit an SOT efficiency factor that is much less than unity, requiring a large current for magnetization switching. The search for new materials that can exhibit an SOT efficiency much greater than unity is a topic of active research, and only a few such materials have been identified using conventional approaches. In this paper, we present a machine learning-based approach using a word embedding model that can identify new results by deciphering non-trivial correlations among various items in a specialized scientific text corpus. We show that such a model can be used to identify materials likely to exhibit high SOT and rank them according to their expected SOT strengths. The model captured the essential spintronics knowledge embedded in scientific abstracts within various materials science, physics, and engineering journals and identified 97 new materials to exhibit high SOT. Among them, 16 candidate materials are expected to exhibit an SOT efficiency greater than unity, and one of them has recently been confirmed with experiments with quantitative agreement with the model prediction.

Sayed, Shehrin↗

Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin-orbit torques in perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO multilayer

The current-induced spin-orbit torques (SOTs) in the perpendicularly magnetized Ir 22 Mn 78 / Co 20 Fe 60 B 20 /MgO structures are investigated. The damping- and field-like torques are characterized using a harmonic technique. The spin Hall angle of Ir 22 Mn 78 is determined to be $θ$ SHE $=+0.057 ± 60.002$. The SOT-driven magnetization switching is also demonstrated with the assistance of an external in-plane field. Furthermore, the magneto-optical Kerr effect imaging experiments show that the magnetization switching is realized through domain nucleation and domain wall motion. These results may promise potential practical applications in high-performance SOT devices based on the antiferromagnetic materials.

42 ENGINEERING↗

Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (VCMA) efficiency. On the other hand, manipulation of magnetism in antiferromagnetic (AFM) based nanojunctions by purely electric field means (rather than E-field induced strain) remains unexplored thus far. Ab initio electronic structure calculations reveal that the VCMA of ultrathin FeRh/MgO bilayers exhibits distinct linear or nonlinear behavior across the AFM to FM metamagnetic transition depending on the Fe- or Rh-interface termination. We predict that the AFM Fe-terminated phase undergoes an E-field magnetization switching with large VCMA efficiency and a spin reorientation across the metamagnetic transition. In sharp contrast, while the Rh-terminated interface exhibits large out-ofplane (in-plane) MA in the FM (AFM) phase, its magnetization is more rigid to external E-field. These findings demonstrate that manipulation of the AFM Néel-order magnetization direction via purely E-field means can pave the way toward ultra-low energy AFM-based MeRAM devices.

36 MATERIALS SCIENCE↗

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping

Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li 0.5 Al 1.0 Fe 1.5 O 4 (LAFO) films on MgGa 2 O 4 (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.

36 MATERIALS SCIENCE↗

Influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis

We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method. The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability. The switching probability can be achieved is only determined by the thermal stability factor Δ of the free layer, it is independent on the device dimension, which is important for the high density device application. Ultra-low error rate down to the order of 10{sup −9} can be achieved for the device of thermal stability factor Δ of 40. Low damping factor α material should be used for the free layer for high reliability device applications. These results exhibit potential of electric field induced precessional magnetization switching with perpendicular easy axis for ultra-low power, high speed and high density magnetic random access memory (MRAM) applications.

36 MATERIALS SCIENCE↗

Backhopping effect in magnetic tunnel junctions: Comparison between theory and experiment

We report on magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on current-induced switching in junctions with a MgO tunnel barrier reveal random back-and-forth switching between magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness t{sub b} and is not observed in tunnel junctions with very thin MgO tunnel barriers, t{sub b} < 0.95 nm. The switching dependence on bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result in a non-deterministic switching behavior at high bias voltages, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Switching 2D magnetic states via pressure tuning of layer stacking

The physical properties of two-dimensional van der Waals crystals can be sensitive to interlayer coupling. For two-dimensional magnets, theory suggests that interlayer exchange coupling is strongly dependent on layer separation while the stacking arrangement can even change the sign of the interlayer magnetic exchange, thus drastically modifying the ground state. Here, we demonstrate pressure tuning of magnetic order in the two-dimensional magnet CrI 3 . We probe the magnetic states using tunnelling and scanning magnetic circular dichroism microscopy measurements. We find that interlayer magnetic coupling can be more than doubled by hydrostatic pressure. In bilayer CrI 3 , pressure induces a transition from layered antiferromagnetic to ferromagnetic phase. In trilayer CrI 3 , pressure can create coexisting domains of three phases, one ferromagnetic and two antiferromagnetic. The observed changes in magnetic order can be explained by changes in the stacking arrangement. Such coupling between stacking order and magnetism provides ample opportunities for designer magnetic phases and functionalities.

36 MATERIALS SCIENCE↗

Low frequency terahertz-induced demagnetization in ferromagnetic nickel

A laser stimulus at terahertz (THz) frequency is expected to offer superior control over magnetization dynamics compared to an optical pulse, where ultrafast demagnetization is mediated by heat deposition. As a THz field cycle occurs on a timescale similar to the natural speed of spin motions, this can open a path for triggering precessional magnetization motion and ultimately ultrafast magnetic switching by the THz magnetic field component, without quenching. Here, we explore the ultrafast magnetic response of a ferromagnetic nickel thin film excited by a strong (33 MV/cm) terahertz transient in non-resonant conditions. While the magnetic laser pulse component induces ultrafast magnetic precessions, we experimentally found that at high pump fluence, the THz pulse leads to large quenching which dominates the precessional motion by far. Furthermore, degradation of magnetic properties sets in and leads to permanent modifications of the Ni thin film and damage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Uniform and nonuniform thermal switching of magnetic particles

The pulse-noise method to systems of classical spins weakly interacting with the bath has been applied to study thermally activated escape of magnetic nanoparticles over the uniform and nonuniform energy barriers at intermediate and low damping. The validity of approximating a single-domain particle by a single spin is investigated. Barriers for a nonuniform escape of elongated particles for the uniaxial model with transverse and longitudinal field have been worked out. Pulse-noise computations have been done for finite magnetic chains. The linear stability of the uniform barrier state has been investigated. The crossover between uniform and nonuniform barrier states has been researched with the help of the variational approach.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication and characterization of net-shaped iron nitride-amine-epoxy soft magnetic composites

Soft magnetic composites (SMCs) offer a promising alternative to electrical steels and soft ferrites in high performance motors and power electronics. They are ideal for incorporation into passive electronic components such as inductors and transformers, which require a non-permanent magnetic core to rapidly switch magnetization. As a result, there is a need for materials with the right combination of low coercivity, low magnetic remanence, high relative permeability, and high saturation magnetization to achieve these goals. Iron nitride is an attractive soft magnetic material for incorporation into an amine/epoxy resin matrix. This permits the synthesis of net-shaped SMCs using a “bottom-up” approach for overcoming the limitations of current state-of-the-art SMCs made via conventional powder metal processing techniques. In this work we present the fabrication of various net-shaped, iron nitride-based SMCs using two different amine/epoxy resin systems and their magnetic characterization. The maximum volume loading of iron nitride reached was ~77% via hot pressing, which produced SMCs with a saturation magnetic polarization (J s ) of ~0.9 T, roughly 2–3 times the J s of soft ferrites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications

Provided is an electric-current-controllable magnetic unit, including: a substrate, an electric-current channel disposed on the substrate, the electric-current channel including a composite heavy-metal multilayer comprising at least one heavy-metal; a capping layer disposed over the electric-current channel; and at least one ferromagnetic layer disposed between the electric-current channel and the capping layer.

42 ENGINEERING↗