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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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High resolution atomic force microscopy with an active piezoelectric microcantilever

Active microcantilevers with on-chip sensing and actuation provide significant advantages in tapping mode Atomic Force Microscopy (AFM). Collocated transduction allows for effective manipulation of cantilever dynamics through feedback control, enabling higher scan rates. However, the adjacency of the sensing and actuation electrodes is known to result in a high level of feedthrough, leading to a low imaging resolution. Readout circuit noise further deteriorates the imaging precision. Here, we investigate the noise sources that affect AFM microcantilevers with collocated aluminum nitride (AlN) actuator–sensor pairs. We reported these cantilevers in earlier work and demonstrated that they display a very low level of feedthrough between the actuation and sensing electrodes. We present a high signal-to-noise ratio (SNR) sensing method that enables us to demonstrate high-resolution AFM on a calibration grating with nm-step silicon carbide (SiC) terraces. In conclusion, measuring the Lorentzian response of the cantilever’s Brownian motion with the on-chip active sensor at resonance enables us to calibrate the dynamic stiffness at the first fundamental resonance mode, without utilizing an optical sensor.

47 OTHER INSTRUMENTATION↗

Nuclear reactor radiation and temperature effects on piezoelectric surface acoustic wave devices

Surface acoustic wave (SAW) resonators were characterized in-situ in a nuclear reactor environment at high temperature. Devices based on lithium niobate (LiNbO 3 ), aluminum nitride (sc-AlN), and thin-film aluminum nitride on sapphire substrate (AlN/sapphire) were tested up to 400 °C temperature and 1.9 × 10 12 n/cm 2 s neutron flux. Shifts in device resonant frequency were detected in response to temperature and neutron flux. Devices undergo a frequency change when exposed to neutron flux. At 300 °C, AlN/sapphire produced the strongest neutron flux response about 1.02 ppm at 1.27 × 10 12 n/cm 2 s neutron flux (5.7 × 10 4 rad-Si/hr neutron dose rate), compared to 0.30 ppm for LiNbO 3 and 0.17 ppm for sc-AlN. While the transient kinetics in response to step change in neutron flux support the defect-accumulation mechanism, the concurrent measurement of device temperature using resistive temperature sensor suggests additional heating caused by absorption of gamma rays can also play a role. These results make SAW devices attractive candidates for sensor applications in extreme environments.

Aluminum nitride↗