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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Kilovolt dc solid state remote power controller development

The experience gained in developing and applying solid state power controller (SSPC) technology at high voltage dc (HVDC) potentials and power levels of up to 25 kilowatts is summarized. The HVDC switching devices, power switching concepts, drive circuits, and very fast acting overcurrent protection circuits were analyzed. A 25A bipolar breadboard with Darlington connected switching transistor was built. Fault testing at 900 volts was included. A bipolar transistor packaged breadboard design was developed. Power MOSFET remote power controller (RPC) was designed.

Mitchell, J. T.↗
NASA NTRS1983

High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy

The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.

Saunier, P.↗
NASA NTRS1984

0.5 W 2-21 GHz monolithic GaAs distributed amplifier

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of the amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 x 300-micron FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The power-added efficiency was 14 percent. The linear gain was 5 plus or minus 1 dB over the same frequency band.

Kim, B.↗
NASA NTRS2004

Waveguide Power Combiner Demonstration for Multiple High Power Millimeter Wave TWTAs

NASA is presently developing nuclear reactor technologies, under Project Prometheus, which will provide spacecraft with greatly increased levels of sustained onboard power and thereby dramatically enhance the capability for future deep space exploration. The first mission planned for use of this high power technology is the Jupiter Icy Moons Orbiter (JIMO). In addition to electric propulsion and science, there will also be unprecedented onboard power available for deep space communications. A 32 GHz transmitter with 1 kW of RF output power is being considered to enable the required very high data transmission rates. One approach to achieving the 1 kW RF power, now being investigated at NASA GRC, is the possible power combining of a number of 100-1 50 W TWTs now under development. The work presented here is the results of a proof-of-concept demonstration of the power combining Ka-band waveguide circuit design and test procedure using two Ka- band TWTAs (Varian model VZA6902V3 and Logimetrics model A440/KA-1066), both of which were previously employed in data uplink evaluation terminals at 29.36 GHz for the NASA Advanced Communications Technology Satellite (ACTS) program. The characterization of the individual TWTAs and power combining demonstration were done over a 500 MHz bandwidth from 29.1 to 29.6 GHz to simulate the Deep Space Network (DSN) bandwidth of 3 1.8 to 32.3 GHz. Figures 1-3 show some of the power transfer and gain measurements of the TWTAs using a swept signal generator (Agilent 83640b) for the RF input. The input and output powers were corrected for circuit insertion losses due to the waveguide components. The RF saturated powers of both ACTS TWTAs were on the order of 120 W, which is comparable to the expected output powers of the 32 GHz TWTs. Additional results for the individual TWTAs will be presented (AM/AM, AM/PM conversion and gain compression), some of which were obtained from swept frequency and power measurements using a vector network analyzer. The results for the power combining demonstration as well as a more detailed description of the power combining test circuit and test procedure will also be presented.

Wintucky, Edwin G.↗
NASA NTRS2001

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ngo, Catherine↗
NASA NTRS1981

Research on design feasibility of high-power light-weight dc-to-dc converters for space power applications

Utilizing knowledge gained from past experience with experimental current-or-voltage step-up dc-to-dc converter power stages operating at output powers up to and in excess of 2 kW, a new experimental current-or-voltage step-up power stage using paralleled bipolar junction transistors (BJTs) as the controlled power switch, was constructed during the current reporting period. The major motivation behind the construction of this new experimental power stage was to improve the circuit layout so as to reduce the effects of stray circuit parasitic inductances resulting from excess circuit lead lengths and circuit loops, and to take advantage of the layout improvements which could be made when some recently-available power components, particularly power diodes and polypropylene filter capacitors, were incorporated into the design.

Wilson, T. G.↗
NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, M. D.↗
NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, Michael D.↗
NASA NTRS1998

K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

Tserng, Hua-Quen↗
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
DOE OSTI2026

Demonstration of thermal fracture limits of gas-cooled Nd:APG-1 and Tm:YLF slabs

High-energy short-pulse laser systems demonstrated to date have been limited to low repetition rates due to significant thermal management challenges associated with scaling these systems to high average power, including the need to understand the thermal fracture limits of laser gain media. In this paper, we demonstrate the thermal fracture limits of two high-average-power gain media in a realistic diode-pumped amplifier geometry: a 5 mm thick Nd:APG-1 slab and a 2 mm thick Tm:YLF slab, both cooled by room-temperature helium gas. Finite element analysis revealed maximum tensile stress at fracture of 25 ± 3 MPa for Nd:APG-1 and 30 ± 3 MPa for Tm:YLF. These stress levels correspond to average volumetric heat loads of 13 ± 1 W/cm 3 in Nd:APG-1 and 247 ± 12 W/cm 3 in Tm:YLF. Additional simulations show geometric scaling: thinner slabs tolerate higher heat loads before fracture, while larger pump spots reach the fracture stress at lower heat loads.

Lasers↗
DOE OSTI2025

Load assessment of a wind farm considering negative and positive yaw misalignment for wake steering

Wake steering strategies are employed to increase the overall power production of wind farms by deflecting wakes of upstream turbines away from downstream ones. The gain in net power comes at the expense of increased fatigue loads experienced by downstream turbines. In this work we investigate performance and fatigue loading characteristics of a small farm consisting of five aligned International Energy Agency Wind Technology Collaboration Programme 15 MW wind turbines. A parametric study is performed where, for every wind direction from −20 to 20°, the yaw misalignment angle varies from −25 to 25°. This setup allows us to investigate asymmetries and identify optimal conditions for a given wind direction. In general, we find that positive yaw configurations are preferred and that yaw configurations that result in attractive power differences when compared to a baseline no-yaw scenario (25 %) come with significant increase in fatigue loading (we use the standard deviation and damage-equivalent load (DEL) of the blade-root, low-speed shaft, and tower-base moments as proxies for fatigue load). We find that for any given positive wind inflow angle, yaw angles between −2.5 and 15° yield power differences of 10 %–20 % over a no-yaw baseline, and positive yaw is preferred because of lower fatigue loading. For any given negative wind inflow angles, positive yaw also results in lower magnitudes of standard deviation and DEL for the channels investigated. A small power loss of up to 2 % is observed for some positive yaw angles under negative wind directions (as compared to symmetric negative yaw and positive wind cases), but improvements in terms of loads exceed 25 % and may be enough to justify a positive yaw configuration under negative winds as well. We show that such behavior can be explained by partial waking and the direction of the rotation of the rotor.

17 WIND ENERGY↗
NASA NTRS2010

Messaging with Cost-Optimized Interstellar Beacons

On Earth, how would we build galactic-scale beacons to attract the attention of extraterrestrials, as some have suggested we should do? From the point of view of expense to a builder on Earth, experience shows an optimum trade-off. This emerges by minimizing the cost of producing a desired power density at long range, which determines the maximum range of detectability of a transmitted signal. We derive general relations for cost-optimal aperture and power. For linear dependence of capital cost on transmitter power and antenna area, minimum capital cost occurs when the cost is equally divided between antenna gain and radiated power. For nonlinear power-law dependence, a similar simple division occurs. This is validated in cost data for many systems; industry uses this cost optimum as a rule of thumb. Costs of pulsed cost-efficient transmitters are estimated from these relations by using current cost parameters ($/W, $/sq m) as a basis. We show the scaling and give examples of such beacons. Galactic-scale beacons can be built for a few billion dollars with our present technology. Such beacons have narrow "searchlight" beams and short "dwell times" when the beacon would be seen by an alien observer in their sky. More-powerful beacons are more efficient and have economies of scale: cost scales only linearly with range R, not as R(exp 2), so number of stars radiated to increases as the square of cost. On a cost basis, they will likely transmit at higher microwave frequencies, -10 GHz. The natural corridor to broadcast is along the galactic radius or along the local spiral galactic arm we are in. A companion paper asks "If someone like us were to produce a beacon, how should we look for it?"

Benford, James↗
NASA NTRS2001

Power enhanced frequency conversion system

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Sanders, Steven↗
NASA NTRS1981

Variable gain for a wind turbine pitch control

The gain variation is made in the software logic of the pitch angle controller. The gain level is changed depending upon the level of power error. The control uses low gain for low pitch activity the majority of the time. If the power exceeds ten percent offset above rated, the gain is increased to a higher gain to more effectively limit power. A variable gain control functioned well in tests on the Mod-0 wind turbine.

Seidel, R. C.↗
NASA NTRS1991

High energy efficiency and high power density proton exchange membrane fuel cells: Electrode kinetics and mass transport

The development of proton exchange membrane (PEM) fuel cell power plants with high energy efficiencies and high power densities is gaining momentum because of the vital need of such high levels of performance for extraterrestrial (space, underwater) and terrestrial (power source for electric vehicles) applications. Since 1987, considerable progress has been made in achieving energy efficiencies of about 60 percent at a current density of 200 mA/sq cm and high power densities (greater than 1 W/sq cm) in PEM fuel cells with high (4 mg/sq cm) or low (0.4 mg/sq cm) platinum loadings in electrodes. The following areas are discussed: (1) methods to obtain these high levels of performance with low Pt loading electrodes - by proton conductor impregnation into electrodes, localization of Pt near front surface; (2) a novel microelectrode technique which yields electrode kinetic parameters for oxygen reduction and mass transport parameters; (3) demonstration of lack of water transport from anode to cathode; (4) modeling analysis of PEM fuel cell for comparison with experimental results and predicting further improvements in performance; and (5) recommendations of needed research and development for achieving the above goals.

Supramaniam Srinivasan↗
NASA NTRS1972

Ground and flight test methods for determining limit cycle and structural resonance characteristics of aircraft stability augmentation systems

Performance criteria and test techniques are applied to stability augmentation systems (SAS) during ground testing to predict objectionable limit cycles and preclude structural resonance during flight. Factors that give rise to these problems, means of suppressing their effects, trade-offs to be considered, and ground test methods that have been developed are discussed. SAS performance predicted on the basis of these tests is compared with flight data obtained from three lifting body vehicles and the X-15 research airplane. Limit cycle and structural resonance test criteria, based upon ground and flight experience and data, were successfully applied to these vehicles. The criteria used were: The limit cycle amplitude (SAS gain multiplied by peak-to-peak angular rate) shall not exceed 0.5 deg for the highest product of control power and SAS gain that will be used in flight; the maximum in-flight SAS gain should never exceed 50 percent of the value at which a structural resonance can be sustained during ground test.

Painter, W. D.↗
NASA NTRSDate not supplied

Modeling and Trade Space for Fuel Cell Powered Aircraft

Hydrogen has gained significant traction in research as a potential carbon-neutral fuel for future aircraft propulsion. The focus of this paper is on the hydrogen-electric aircraft (HEA) propulsion system which is a highly integrated network of high-power electrical, mechanical, fluidic, cryogenic, and thermal management components. These systems require careful analysis to determine the most efficient and light-weight design that ultimately reduces carbon emissions and operating cost. Fuel cell and energy storage sizing and optimization will be major factors that contribute to the aircraft feasibility independent of hydrogen storage. This paper describes the framework and modeling approach for the analysis of hydrogen-electric aircraft (HEA) propulsion systems for a under the National Aeronautics and Space Administration (NASA) Commercially-viable Hydrogen Aircraft for Reduction of Greenhouse Emissions (CH 2 ARGE) Project. For the first time, the Electrical Power System – Sizing and Analysis Tool (EPS-SAT) is used to conduct the sizing and trade studies on the hydrogen-electric aircraft propulsion system.

Hydrogen Electric Aircraft↗