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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2020

Advanced Silicon Avalanche Photodiodes on NASA's Global Ecosystem Dynamics Investigation (GEDI) Mission

Silicon Avalanche Photodiodes (APDs) are used in NASA’s Global Ecosystem Dynamics Investigation (GEDI) which was launched in December 2018 and is currently measuring the Earth’s vegetation vertical structure from the International Space Station. The APDs were specially made for space lidar with a much lower hole-to-electron ionization coefficient ratio (k-factor ~0.008) than that of commercially available silicon APDs in order to reduce the APD excess noise from the randomness of the avalanche gain. A silicon heater resistor was used under the APD chip to heat the device up to 70°C and improve its quantum efficiency at 1064 nm laser wavelength while maintaining a low dark current such that the overall signal to noise ratio is improved. Special APD protection circuits were used to raise the overload damage threshold to prevent device damage from strong laser return by specular surfaces, such as still water bodies, and space radiation events. The APD and a hybrid transimpedance amplifier circuit were hermetically sealed in a package with a sufficiently low leak rate to ensure multi-year operation lifetime in space. The detector assemblies underwent a series of pre-launch tests per NASA Goddard Environmental Verification Standard for space qualification. They have performed exactly as expected with GEDI in orbit. A detailed description of the GEDI detector design, signal and noise model, and test results are presented in this paper.

Sun, Xiaoli↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗
NASA NTRS2020

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗
NASA NTRS2001

Laboratory characterization of silicon avalanche photodiodes (APD) for pulse position modulation (PPM) detection

Two commercially available large area silicon avalanche photodiodes (APD) were characterized in the laboratory. Specifically, the response of the APD’s to a sequence of 8-bit pulse position modulated (256-PPM) laser pulses, with and without background noise, was recorded and stored for post analysis. Empirical probability distribution functions (pdf) were constructed from the signal and noise slot data and compared to pdf’s predicted by an analytical model based on Webb/Gaussian statistics. The limited pulse sequence was also used to generate bit-error rate (BER) versus signal photons per pulse values, albeit with large error bars. These BER measurements were also compared to results predicted using the Gaussian and Webb/Gaussian models for APD channel statistics. While the measurements qualitatively reflect features predicted by theory, significant quantitative deviations are displayed between the measurements and theory. The source of these discrepancies is not currently well understood, but it is surmised that inaccurate knowledge of detector parameters such as gain and noise equivalent temperature models may explain the discrepancies.

Biswas, A.↗
NASA NTRS2021

Evaluation of asynchronous geiger-mode avalanche photodiode arrays for deep-space optical communications

The NASA Psyche mission is set to explore an asteroid located between Mars and Jupiter with a launch date in 2022. On-board the Psyche spacecraft is experimental demonstrator technology that will allow scientists to explore the capabilities of optical communications – a program called Deep Space Optical Communication (DSOC) led by Jet Propulsion Laboratory (JPL). DSOC seeks to improve communications performance by developing a space-based Flight Laser Transceiver (FLT) and a ground-based transceiver to enable photon-efficient communications with equipment in deep space. An integral part to this FLT system is a high-efficiency photon-counting camera (PCC) that is able to detect both the 1064nm uplink/beacon laser photons and 1550nm downlink laser photons with low background noise, and is capable of withstanding the rigors of space-travel. The paper details the characterization of several asynchronous Geiger-Mode Avalanche Photodiode (GmAPD) arrays developed by MIT Lincoln Laboratory for use in the PCC- specifically evaluating the temperature dependence of background noise, photon detection efficiency at 1064nm and 1550nm wavelengths, pixel lifetime testing, and angle of acceptance measurements. The results of this characterization are used to determine the nominal conditions for the device to operate in while in flight to maintain an efficient link with the ground-based transceiver.

Duerr, E.↗
NASA NTRS2021

Probabilistic Processing of Asynchronous Geiger-Mode Avalanche Photodiode Arrays for Background Rate Measurements

A system-level performance evaluation of Geiger-mode avalanche photodiode (GmAPD) arrays requires accurate measurement and prediction of the background rate of the device due to dark counts and other spurious detection events. Since a GmAPD detector reports only a binary value and timestamp associated with an avalanche event, dark count rates are typically measured by averaging thousands of frames to support a statistically significant measurement. For both synchronous and asynchronous detector, the Poisson distributed background rates are referenced to the time each pixel is armed. Unlike for synchronous GmAPD imagers where all the pixels are armed to an array-wide arm signal, an asynchronous pixel operates independently from its neighboring pixels; requiring the background rates to be calculated using an interarrival histogram. For both types of imagers, the background rate is typically evaluated by fitting an exponential distribution to a fixed window within a measured histogram of time intervals between detection events However, if the statistics of the background rate are insufficient – whether that is due to low population sizes, saturation, or a large dynamic range of population size across the array, the pixel, or array-wide, performance metrics may report results with varying accuracy. This paper reports on an implementation of an algorithm that evaluates GmAPD background rates based on statistical metrics rather than fixed windows. The algorithm functions by determining the appropriate integration window within the interarrival time histogram based on a per-pixel count rate set by a predetermined tolerable measurement error. The implementation of the algorithm allows us to characterize GmAPD arrays with orders of magnitude spread in background rates across the detector using common statistical parameters.

Mumolo, J.↗
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗
NASA NTRS1972

Increasing the response of PIN photodiodes to the ultraviolet

Solid state device uses sapphire windows and avoids coatings which absorb ultraviolet radiation and ultimately alter detector geometry. Ultimate solution for ultraviolet response is geometry with maximum peripheral area and horizontal field structure to draw out photon induced current carriers.

Burrous, C. N.↗
NASA NTRS1986

A two-dimensional intensified photodiode array for imaging spectroscopy

The Johns Hopkins University is currently developing an instrument to fly aboard NASA's Space Shuttle as a Spartan payload in the late 1980s. This Spartan free flyer will obtain spatially resolved spectra of faint extended emission line objects in the wavelength range 750-1150 A at about 2-A resolution. The use of two-dimensional photon counting detectors will give simultaneous coverage of the 400 A spectral range and the 9 arc-minute spatial resolution along the spectrometer slit. The progress towards the flight detector is reported here with preliminary results from a laboratory breadboard detector, and a comparison with the one-dimensional detector developed for the Hopkins Ultraviolet Telescope. A hardware digital centroiding algorithm has been successfully implemented. The system is ultimately capable of 15-micron resolution in two dimensions at the image plane and can handle continuous counting rates of up to 8000 counts/s.

Tennyson, P. D.↗
NASA NTRS1988

Synchronous Photodiode-Signal Sampler

Synchronous sampling circuit increases signal-to-noise ratio of measurements of chopped signal of known phase and frequency in presence of low-frequency or dc background noise. Used with linear array of photoelectric sensors for locating edge of metal plate. Multiplexing circuit cycles through 16 light-emitting-diode/photodiode pairs, under computer control. Synchronized with multiplexer so edge detector makes one background-subtracted signal measurement per emitter/detector pair in turn.

Primus, Howard K.↗