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Results for “Polarization resistance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Localized Corrosion Behavior of Non-Equiatomic NiFeCrMnCo Multi-Principal Element Alloys

A series of single phase Ni 38 Fe 20 Cr x Mn 21–0.5x Co 21–0.5x multi-principal element alloys (MPEAs) were fabricated and their localized corrosion behavior was tested in 0.6 M NaCl solution. These MPEAs were found to be susceptible to localized corrosion, exhibiting pitting at room temperature, as indicated by positive hysteresis loops and low repassivation potentials observed in cyclic potentiodynamic polarization experiments. The pitting resistance increased with increasing Cr content. Interestingly, even the MPEAs with low chromium content, Ni 38 Fe 20 Cr 6 Mn 18 Co 18 and Ni 38 Fe 20 Cr 10 Mn 16 Co 16 , exhibited passivity and localized corrosion. Here, the passivity observed in these low chromium MPEAs is likely derived from their relatively high nickel content. Crystallographic pit morphology was observed in most of these MPEAs, suggesting the absence of a salt film on the dissolving pit surface. Such crystallographic pit morphology indicates that the pit growth in most of these MPEAs was under charge-transfer/ohmic control.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A naphthalene diimide side-chain polymer as an electron-extraction layer for stable perovskite solar cells

Poly(N-(5-(5-norbornene-2-carbonyl)oxy)pentyl)-N'-n-hexyl-naphthalene-1,8:4,5-bis(dicarboximide) has been synthesized by esterification of (N-(5-hydroxypentyl)-N'-n-hexyl-naphthalene-1,8:4,5-bis(dicarboximide)) with exo-5-norbornene-2-carboxylic acid, and has been polymerized using the first-generation Grubbs initiator. This side-chain polymer exhibits good transparency throughout the visible (absorption onset at ca. 400 nm), good solubility in common low- and medium-polarity organic solvents, good resistance to dimethylformamide, and appropriate electron affinity for use as an electron-extraction layer in lead-halide perovskite solar cells. The performance of this polymer in n-i-p perovskite solar cells was compared to that of several small-molecule naphthalene-1,8:4,5-bis(dicarboximide) derivatives and of SnO 2 . Solar cells using the polymer exhibited open-circuit voltages of up to 1.02 V, short-circuit currents of over 21 mA cm –2 , and power conversion efficiencies (PCE) reaching 14% which stabilize at 13.8% upon 90 s of illumination. Meanwhile control SnO 2 devices exhibited a PCE of ca. 16%, and small-molecule devices gave PCE values of less than 10%. Here, the devices employing the polymer exhibited improved long-term stability relative to the SnO 2 control devices under continuous illumination.

36 MATERIALS SCIENCE↗
NASA NTRS1974

The influence of polarization on millimeter wave propagation through rain

The limitations which precipitation depolarization will place on future millimeter wave earth-satellite communications systems employing orthogonal-polarization frequency sharing was studied and the possibility of improving the fade resistance of such systems either through polarization diversity operation or by the choice of the polarization(s) least subject to attenuation was examined. Efforts were confined largely to ground-based communications systems investigated during a twenty-seven month period. Plans to extend the theoretical results to satellite systems are discussed.

Bostian, C. W.↗
NASA NTRS1994

Dual-Anode Nickel/Hydrogen Cell

Use of two hydrogen anodes in nickel/hydrogen cell reduces ohmic and concentration polarizations contributing to internal resistance, yielding cell with improved discharging performance compared to single-anode cell. Dual-anode concept incorporated into nickel/hydrogen cells of individual pressure-vessel type (for use aboard spacecraft) and common pressure-vessel type, for use on Earth to store electrical energy from photovoltaic sources, "uninterruptible" power supplies of computer and telephone systems, electric vehicles, and load leveling on power lines. Also applicable to silver/hydrogen and other metal/gas batteries.

Gahn, Randall F.↗
NASA NTRS2011

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Campbell, Kristy A.↗
NASA NTRS2012

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A.↗
NASA NTRS2013

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A↗
DOE OSTI2022

Impedance Modeling for Mixed Conductors with Simultaneous Insertion & Electrocatalytic Reactions: A Case Study of Transition-Metal Hydroxides in Aqueous Electrolyte

Electrochemical impedance spectroscopy (EIS) is commonly used to investigate the kinetics of mixed ionic–electronic conductor (MIEC) electrodes. Across various applications, MIECs exhibit ionic (e.g., insertion) and/or electronic (e.g., electrocatalytic) charge transfer reactions at the electrode/electrolyte interface. Bulk storage and transport of charge carriers also couple with these interfacial reactions. Here, we build a generalized, physics-based impedance model for MIECs with an ion-blocking current collector and explore how bulk and interfacial resistance, chemical capacitance, and DC polarization affect the impedance response. Using transition metal hydroxides as a case study, we provide guidance on extracting reaction kinetics or bulk resistance from the Nyquist plots in interface- or bulk-controlled conditions, respectively. Generalizing our EIS analysis enables a robust analysis of MIEC kinetics for a diverse set of systems.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Spin-caloric resistance of Dirac plasma in a graphene Corbino device

The thermal resistance of a spin-polarized hydrodynamic Dirac plasma in graphene is considered. Here, a mechanism for the coupling of heat and spin flows is discussed, demonstrating that spin diffusion and spin thermocurrent modify viscous dissipation, leading to a significant enhancement of thermal resistance. Practical calculations are then presented for graphene devices in the Corbino geometry.

Graphene↗
DOE OSTI2021

Bioinspired nonwetting surfaces for corrosion inhibition over a range of temperature and corrosivity

Applications of superhydrophobic (SHS) and lubricant infused surfaces (LIS) involve exposure to corrosive environments from the acidic to the basic, at a range of temperatures, that are not fully characterized. Here, we present for the first time a multifactorial study of the effects of surface fabrication method, surface modification, surface functionalization time, temperature and pH of the immersion medium on the corrosion performance of nonwetting copper surfaces. Bioinspired SHS and LIS fabricated using facile methods of etching and electrodeposition are systematically assessed using potentiodynamic polarization measurements for their corrosion resistance in saline solution (pH ≈7) over a temperature range 23–85°C. SHS and LIS are shown to exhibit diminished corrosion rate, by up to two orders of magnitude, compared to bare copper surface. An Arrhenius model is developed for the first time, describing the temperature- dependent corrosion rate of SHS and LIS. Electrochemical impedance spectroscopy is used to show that corrosion resistance of LIS is larger by three orders of magnitude in extremely acidic (pH = 1) and by an order magnitude in extremely alkaline (pH = 14) media compared to bare copper surface. Etched LIS are generally more resistant to corrosion compared to SHS at all temperatures with excellent microstructural durability.

42 ENGINEERING↗
DOE OSTI2022

Remote surface optical phonon scattering in ferroelectric Ba 0.6 Sr 0.4 TiO 3 gated graphene

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba 0.6 Sr 0.4 TiO 3 films, with field effect mobility up to 23 000 cm 2 V –1 s –1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba 0.6 Sr 0.4 TiO 3 , from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Characterization of high-flux cadmium zinc telluride detectors coupled to MM-PAD readout ASICs for high-flux X-ray applications

High-flux cadmium zinc telluride (HF-CZT) is a promising material for next-generation X-ray imaging due to its high stopping power, wide bandgap, and improved resistance to radiation-induced polarization [1]. We bonded 2 mm thick HF-CZT sensors with Cornell's Mixed-Mode Pixel Array ASICs, which combine analog charge integration and in-pixel digital counting to achieve single X-ray sensitivity, large full well capacity, and frame rates up to 10 kHz [2,3]. Detector characterization showed stable electron collection above 150 V bias, while hole collection remained limited by trapping even at 700 V. Temporal studies revealed non-negligible afterglow, with an unexpected increase in afterglow at higher biases, which was reduced by infrared illumination, suggesting that injected carriers reduce trapping near contact interfaces. Polarization measurements confirmed improved stability compared to conventional CZT, though polarization effects persisted, particularly with hole collection, with up to 5% signal loss and spatial distortion at high doses.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stacking-engineered ferroelectricity in bilayer boron nitride

Stacking a ferroelectric Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy. Science , abd3230 and abe8177, this issue p. 1458 and p. 1462 ; see also abi7296, p. 1389

Science & Technology - Other Topics↗
DOE OSTI2026

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗
DOE OSTI2021

Investigation of UV, ns-laser damage resistance of hafnia films produced by electron beam evaporation and ion beam sputtering deposition methods

Laser-induced damage in coating materials with a high index of refraction, such as hafnia, limits the performance of high power and high energy laser systems. Understanding the underlying physics responsible for laser damage holds the key for developing damage-resistant optical films. Previous studies have reported a substantial difference in laser damage onset for hafnia films produced by different deposition methods, yet the underlying mechanisms for the observed difference remain elusive. We combined laser damage testing with analytical characterizations and theoretical simulations to investigate the response of hafnia films produced by electron (e-) beam evaporation vs ion beam sputtering (IBS) methods upon UV ns-laser exposure. We found that e-beam produced hafnia films were overall more damage resistant; in addition, we observed a polarization anisotropy associated with the onset of damage in the e-beam films, while this effect was absent in the latter films. The observed differences can be attributed to the stark contrast in the pressure inside the pores inherent in both films. The high pressure inside the IBS-induced nanobubbles has been shown to reduce the threshold for laser-induced plasma breakdown leading to film damage. The polarization effects in the e-beam coatings can be related to the asymmetric electric field intensification induced by the columnar void structure. Our findings provide a fundamental basis for developing strategies to produce laser damage-resistant coatings for UV pulsed laser applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Enabling high rate capability, low internal resistance, and excellent cyclability for vanadium redox flow batteries utilizing ultrafast laser-structured graphite felt

The electrochemical performance of vanadium redox flow batteries (VRFBs) was enhanced via laser-patterned graphite felt (GF) electrodes. The laser-structured GF electrodes engineered via preparing a series of well-ordered microscopic channel structures with an average width of 200 μm, creating a three-dimensional carbon framework. The ultrafast laser patterning increased the porosity by 10%, as compared to pristine electrode. The analysis of the overpotential distribution using electrochemical impedance spectroscopy revealed that the electrode polarization involving charge transfer and diffusion resistance is strongly alleviated with the aid of carbon micro-perforation. The advanced design of laser-structured GF electrode also exhibits high rate capability, low internal resistance, and excellent cyclability. The improved performance was attributed to the synergistic effect involving (i) high electrochemically active surface area for rapid electrochemical reactions (i.e., V(II)/V(III) and V(IV)/V(V) redox couples) and (ii) excellent transport properties for facile electron/ion/species transport. The micro-scale channels created with the laser-ablation technique act as capillary structures and enabled homogeneous and rapid wetting of GF electrodes as formulated with the classical Washburn equation. The VRFB equipped with the laser-structured GF electrodes delivered a high discharge capacity with exceptional capacity retention upon extended cycling (>84.9%). In conclusion, accordingly, the design of laser-structured electrode paves the pathway towards finely tuning the electrode internal microstructure for improved cyclability, durability, and capacity retention in various electrochemical energy storage/conversion devices (e.g. all-vanadium redox flow batteries).

25 ENERGY STORAGE↗
DOE OSTI2024

Electrode Elastic Modulus as the Dominant Factor in the Capping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

The discovery of ferroelectricity in hafnia based thin films has catalyzed significant research focused on understanding the ferroelectric property origins and means to increase stability of the ferroelectric phase. Prior studies have revealed that biaxial tensile stress via an electrode “capping effect” is a suspected ferroelectric phase stabilization mechanism. This effect is commonly reported to stem from a coefficient of thermal expansion (CTE) incongruency between the hafnia and top electrode. Despite reported correlations between ferroelectric phase fraction and electrode CTE, the thick silicon substrate dominates the mechanics and CTE-related stresses, negating any dominant contribution from an electrode CTE mismatch toward the capping effect. In this work, these discrepancies are reconciled, and the origin of these differences deriving from electrode elastic modulus, not CTE, is demonstrated. Pt/M/TaN/Hf 0.5 Zr 0.5 O 2 /TaN/Si devices, where M is platinum, TaN, iridium, tungsten, and ruthenium, were fabricated. Sin 2 (ψ)-based X-ray diffraction measurements of biaxial stress in the HZO layer reveal a strong correlation between biaxial stress, remanent polarization, and electrode elastic modulus. Conversely, a low correlation exists between the electrode CTE, HZO biaxial stress, and remanent polarization. A higher elastic modulus enhances the resistance to electrode elastic deformation, which intensifies the capping effect during crystallization, and culminates in the tandem restriction of out-of-plane hafnia volume expansion and preferential orientation of the polar c-axis normal to the plane. These behaviors concomitantly increase the ferroelectric phase stability and polarization magnitude. This work provides electrode material selection guidelines toward the development of high-performing ferroelectric hafnia into microelectronic devices, such as nonvolatile memories.

36 MATERIALS SCIENCE↗