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Electron temperature dependence of molecular neon ions recombination with electrons using microwave afterglow/mass spectrometer, obtaining recombination coefficient
Observations of recombination lines form normal H II regions, extended H II regions, nonthermal sources, and the H I medium are discussed. Detection of recombination lines from elements other than hydrogen may provide a means of identifying fossil Stromgren spheres at high temperature.
The efficiency of various surface coatings and materials toward inhibiting hydrogen atom surface recombination was investigated over a temperature range of 77 to 298 K. A flow discharge, mass spectrometer technique was used to make the experimental measurements. Hydrogen atoms were monitored directly, and these measurements were expressed as ratios of mass spectrometer peak heights for atomic and molecular hydrogen. Several of the surface coatings studied were efficient at reducing hydrogen atom surface recombination at room temperature. However, as the temperature was lowered, this efficiency was drastically reduced. Calibration of the mass spectrometer for atomic and molecular hydrogen indicated that mass spectrometer discrimination against hydrogen atoms was severe. Mass spectrometer sensitivity for hydrogen atoms was only about one-sixth of that for molecular hydrogen.
Recombination coefficients of electrons with HCO(+) ions were determined with a microwave afterglow/mass spectrometer apparatus. Afterglow measurements of electron density decays in neon-hydrogen-carbon monoxide mixtures are correlated with the decay of mass-identified ion currents to the wall of the microwave cavity. At the appropriate partial pressures of hydrogen and carbon monoxide in the mixture, the ion HCO(+) dominates the ion composition and its wall current approximately tracks the electron density decay curve. From recombination controlled electron density decay curves, the values alpha (HCO(+)) = (3.3 + or - 0.5) and (2.0 + or - 0.3) 0.0000001 cu cm/sec are obtained at 205 and 300 K, respectively. The implications of these results for models of polyatomic molecule formation in dense interstellar clouds are briefly discussed.
The electron-ion recombination coefficients for H3(+) and H5(+) ions were determined by means of a microwave afterglow/mass spectrometer apparatus. Measurements of electron density decays in helium-hydrogen mixtures are correlated with the decay of mass-identified ion currents to the wall of the microwave cavity. At low partial pressures of hydrogen in the mixture, the ion H3(+) dominates the ion composition and the ion wall current tracks the electron density decay curves. From recombination controlled electron density decay curves, the values alpha (H3(+)) = (2.9 + or - 0.3), (2.3 + or - 0.3), and (2.0 + or - 0.2) x 0.0000001 cu cm per sec, are obtained at 205, 300 and 450 K, respectively. At higher partial pressures of hydrogen and low temperatures, where (H5(+)) is the dominant ion, the value alpha (H5(+)) = (3.6 + or - 1.0) x 0.0000001 cu cm per sec is obtained at 205 K. The implications of these results concerning ionization levels in the atmospheres of the outer planets and in the interstellar medium are discussed.
Measurements of night-time 6300 A airglow intensities at the Arecibo Observatory have been compared with dissociative recombination calculations based on electron densities derived from simultaneous incoherent backscatter measurements. The agreement indicates that the nightglow can be fully accounted for by dissociative recombination. The comparisons are examined to determine the importance of quenching, heavy ions, ionization above the F-layer peak, and the temperature parameter of the model atmosphere. Comparable fits between the observed and calculated intensities are found for several available model atmospheres. The least-squares fitting process, used to make the comparisons, produces comparable fits over a wide range of combinations of neutral densities and of reaction constants. Yet, the fitting places constraints upon the possible combinations; these constraints indicate that the latest laboratory chemical constants and densities extrapolated to a base altitude are mutually consistent.
The reflection nebula NGC 2023 has been observed at four frequencies in a study of its carbon recombination line emission. The observations show the recombination line region to be about 2 pc in diameter, with an average electron density of about 0.2 per cu cm and electron temperature of about 20 K. The electron density increases exponentially near the B1.5 star HD 37903, the illuminating star of NGC 2023. The most reasonable interpretation of the observational results is that the carbon emission lines arise in a cold C II region surrounding HD 37903. The coexistence of the C II region with a region of enhanced CO emission suggests that the CO in NGC 2023 may be excited by electron collisions.
A study of the nighttime dissociative recombination production of O(1D) is reported. The data were gathered by a rocket payload carrying an ion mass spectrometer, Langmuir probe, retarding potential analyzer, and 6300-A photometer. The specific recombination rate to produce O(1D) atoms is deduced to be (2.8 + or - 1.0) times 10 to the minus 8th cu cm per sec and is 30% of the total laboratory rate. The quenching rate at 250 km is 0.0044 + or - 0.0015 per sec.
The widths of the radio recombination lines observed in the direction of the galactic center are interpreted as due to pure rotation. This interpretation leads to a mass estimate for the inner 1.6-pc region of our Galaxy. It is noted that recent observations of M 31 suggest the existence of a distinct dynamic entity at its center - the nucleus. The rotational interpretation of the recombination line widths is shown to be consistent with the existence of a nucleus at the center of our own Galaxy which is similar in nature to the nucleus of M 31.
From a consideration of relevant theoretical and experimental data it is concluded that H atoms (but not H2 molecules) will be chemisorbed on interstellar graphite grains, with H2 formation proceeding efficiently for graphite grain temperatures less than 70 K. It is argued that graphite grains will act as the principal sites for H2 formation, with a formation rate of about 4 to the minus 17th cu cm per sec. Heating by H2 molecules formed by surface recombination is analyzed in the context of the available experimental data, and a heating rate is derived and compared with other suggested cloud heating mechanisms. It is concluded that H2 recombination will provide the largest heat source in diffuse clouds if the albedo of interstellar dust in the 912-1200 A region is high (about 0.9), whereas if the albedo in this wavelength region is lower (about 0.5), photoelectron ejection from grains will tend to predominate, and can explain observed cloud temperatures with a carbon depletion factor of approximately 2, a factor attributable to a normal interstellar abundance of graphite grains.
A description is presented of an application of techniques from Stark-broadening theory considered by Griem (1974) to the computation of dielectronic recombination rated for multiply charged Fe ions under the influence of plasma electric microfields. Attention is given to a dielectronic recombination process for which the effects of surrounding charged particles have been found to be important at surprisingly low densities.
Model weak D-type ionization fronts are used to show that narrow H I radio recombination lines, such as those observed in the directions of several galactic H II regions, may be formed in the outermost layers of an ionization front bounding an H II region. Four model ionization fronts are computed with different values of magnetic-field strength, ionizing photon energy, and initial conditions. The recombination line strengths given by the models are compared with observed line strengths for the H II region NGC 2024, and the observed line profiles are found to be about twice as broad as the model profiles. Some likely explanations for the discrepancy are considered, particularly a variation in front velocity over the observing beam width (Stark broadening is ruled out).
The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells
Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.
The classical Shockley-Read-Hall theory of free carrier recombination and generation via traps is extended to degenerate semiconductors. A concise and simple expression is found which avoids completely the concept of a Fermi level, a concept which is alien to nonequilibrium situations. Assumptions made in deriving the recombination generation current are carefully delineated and are found to be basically identical to those made in the original theory applicable to nondegenerate semiconductors.
It is found that the contribution to the dielectronic recombination rate of stabilizing transitions of the outer electron is within the 30% accuracy of the Burgess rates calculated by neglecting this process even for Delta n = 0 transitions for astrophysically important ions. Autoionization to excited levels, ignored in the Burgess procedure and shown by Jacobs et al. (1977) to be important for some ions in the calculation of the dielectronic recombination rate, is discussed with reference to the resonance excitation of some astrophysically important X-ray lines. In particular, the contribution of resonances to the excitation of several lines in the helium and neon isosequences is estimated.
Iron is injected into a well-diagnosed theta-pinch plasma. The intensities of lines from various ionization stages are measured as functions of time and interpreted by means of a time-dependent corona ionization-recombination model. Effective coefficients for dielectronic recombination at electron densities of approximately 3 by 10 to the 16th power per cu cm are equal to or smaller than presently accepted theoretical values for low-density plasmas. Rate coefficients for ionization tend to be smaller than theoretical values.
A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.