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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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141 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

How Should Researchers Measure Perovskite-Based Monolithic Multijunction Solar Cells’ Performance? A Calibration Lab's Perspective

Perovskite multijunctions (PVSK MJs) have made remarkable progress with monolithic PVSK/PVSK tandems surpassing the efficiency of single-junction (1 J) PVSK cells and PVSK/Si cells reported to exceed the 30% efficiency mark. These efficiencies are reported at standard test conditions (STC), established by the photovoltaic (PV) community to facilitate comparison between devices and technologies. Herein, it is discussed why an accurate STC performance measurement for a MJ is more complicated than for a 1 J cell and the special aspects to be considered when measuring the current-voltage characteristics and the performance of PVSK-containing MJ cells are emphasized. It is discussed why a spectrally adjustable solar simulator is needed and the sequence of accurate performance measurement, namely measurement of the spectral response of each junction, adjustment of the spectrum, and appropriate protocols for measuring the power output of the device at STC, is presented. For all these, common errors and pitfalls that sometime lead to misleading interpretation of the results are presented, and the methods to evaluate the accuracy of the data when a spectrally adjustable solar simulator is not available are recommended. Finally, first step is taken toward recommending performance measurement approaches when high throughput is required as will eventually be in a production line.

14 SOLAR ENERGY↗
DOE OSTI2020

A Simple Physical Model for Three-Terminal Tandem Cell Operation

We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide 'generating' power islands in the 2D current J 1 J 2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

14 SOLAR ENERGY↗
DOE OSTI2021

Using Fission-Track Radiography Coupled with Scanning Electron Microscopy for Efficient Identification of Solid-Phase Uranium Mineralogy at a Former Uranium Pilot Mill (Grand Junction, Colorado)

At a former uranium pilot mill in Grand Junction, Colorado, mine tailings and some subpile sediments were excavated to various depths to meet surface radiological standards, but residual solid-phase uranium below these excavation depths still occurs at concentrations above background. The combination of fission-track radiography and scanning electron microscope energy-dispersive X-ray spectroscopy (SEM-EDS) provides a uniquely efficient and quantitative way of determining mineralogic associations of uranium that can influence uranium mobility. After the creation of sample thin sections, a mica sheet is placed on those thin sections and irradiated in a nuclear research reactor. Decay of the irradiated uranium creates fission tracks that can be viewed with a microscope. The fission-track radiography images indicate thin section sample areas with elevated uranium that are focus areas for SEM-EDS work. EDS spectra provide quantitative elemental data that indicate the mineralogy of individual grains or grain coatings associated with the fission-track identification of elevated uranium. For the site in this study, the results indicated that uranium occurred (1) with coatings of aluminum–silicon (Al/Si) gel and gypsum, (2) dispersed in the unsaturated zone associated with evaporite-type salts, and (3) sorbed onto organic carbon. The Al/Si gel likely formed when low-pH waters were precipitated during calcite buffering, which in turn retained or precipitated trace amounts of Fe, As, U, V, Ca, and S. Understanding these mechanisms can help guide future laboratory and field-scale efforts in determining long-term uranium release rates to groundwater.

58 GEOSCIENCES↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗
DOE OSTI2024

Technoeconomic analysis of perovskite/silicon tandem solar modules

Tandem photovoltaic (PV) modules offer an opportunity to improve the efficiency and energy yield of available solar resources compared with single-junction devices. Here, we present a cost model and sensitivity analysis of perovskite/silicon (Si) tandem modules to understand how design choices impact overall module costs. We find a minimum sustainable price (MSP) of $\$$0.428/W DC for our baseline two-terminal design and $\$$0.423/W DC for our baseline four-terminal design, each at a module efficiency of 25% and module production of 3 GW per year in the United States. We find that the choice of Si cell architecture, overall module efficiency, and factory throughput have the most significant impacts on cost and competitiveness. The dynamic model provided is designed for researchers, companies, and interested individuals to use and edit as needed to better understand the trade-offs among PV module technologies and enable targeted research to improve module design and fabrication.

14 SOLAR ENERGY↗
DOE OSTI2021

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Effects of Plasma Etching on Dopant Compensation between p- and n-Type Poly-Si Fingers in Passivated Interdigitated Back Contact Solar Cells

Efficiencies surpassing 26% have been achieved for single-junction Si solar cells based on the interdigitated back contact (IBC) architecture. However, the possibility of lateral shunting between the doped fingers has limited industrial adoption thus far. To avoid this possibility of shunt, complicated patterning techniques of the doped rear fingers have been developed, but spreading can still occur through multiple pathways during cell processing. Patterning can be simplified by using masked plasma-enhanced chemical vapor deposition (PECVD), but spreading during deposition will also lead to contamination of the isolation region between doped fingers. We significantly reduce the effect of this spreading through a short, gentle plasma etching step, which enables a trap-assisted compensation mechanism to take effect more easily than without the plasma etch. These two effects combined allow for the use of a simple patterning technique while still maintaining a highly resistive region between the doped fingers, and will reduce the complexity of IBC cell fabrication overall.

atom probe↗
DOE OSTI2023

Hydrogen Stability and Bonding in SiN x and Al 2 O 3 Dielectric Stacks on Poly-Si/SiO x Passivating Contacts

Polycrystalline Si on SiO x passivating contacts enables some of the highest efficiency single-junction Si photovoltaic devices, but the high-temperature firing process needed for industrial metallization can significantly reduce passivation. We show that after firing, the implied open-circuit voltage, iV oc , for the Al 2 O 3 /SiN x /poly-Si/SiO x /c-Si stack is 20-30 mV higher than the SiNx/Al 2 O 3 /poly-Si/SiO x /c-Si stack and therefore provides better passivation of the SiO x /c-Si interface. Using effusion measurements and Fourier transform infrared spectroscopy, we demonstrate that more than twice as much hydrogen is retained in the dielectric up to the peak firing temperature of ~800 degrees C for Al 2 O 3 -capped structures. If the Al 2 O 3 layer is not present in the stack, after firing, the iVoc is lower by 50-100 mV compared to Al 2 O 3 /SiN x or SiN x /Al 2 O 3 stacks. These studies will inform future work on the role of dielectrics in aiding the passivation of poly-Si/SiO x passivating contacts.

08 HYDROGEN↗
DOE OSTI2020

Comparative Life Cycle Analysis of Scalable Single-Junction and Tandem Perovskite Solar Cell (PSC) Systems

Efficient, low-cost solar cells based upon perovskites have the potential to transform the US and global energy portfolio and improve energy security if they can be manufactured in an environmentally sustainable manner. However, previous life cycle analyses (LCA) of perovskite solar cells (PSC) used lab recipes to project the environmental impact of industrial PSC production – using materials and processes that may not be representative of industrial productions due to high material waste and complex synthesis – and such studies were limited to a few single-junction technologies. Thus, the goal of this project was threefold: a) to review the most promising for industrial production single-junction and tandem PSC technologies, b) to build life-cycle materials inventories that reflect scalable production of these technologies, and c) to conduct comprehensive life-cycle analysis of these technologies and compare their environmental impact with those of established commercial technologies. In response, this project identified challenges for fabrication transitioning from laboratory to sustainable industrial production, developed life-cycle inventory (LCI) data for scaling to industrial production four promising single-junction and three tandem PSC systems and produced life-cycle-investigations using, as metrics, a complete spectrum of energy, environmental and ecological impact indicators. Special focus was given to the use of lead, silver and indium in PSC. The project used the Life Cycle Assessment (LCA) methodology as standardized by the Society of Environmental Toxicology and Chemistry (SETAC), ISO standards 14040 and 14044, and the International Energy Agency PVPS Task 12 LCA guidelines. LCA allows the calculation of a number of energy and environmental and impact categories, including energy cumulative energy demand (CED), global warming potential (GWP), human toxicity potential (HTP), eco-toxicity potential (ETP), abiotic resource depletion potential (ADP), acidification potential (AP), ozone depletion potential (ODP), photochemical oxidation potential (POP), eutrophication potential (EP). In addition to those, we calculated the Energy Pay-Back Time (EPBT) and the Energy Return On Investment (EROI). We provide LCA impacts for complete perovskite PV systems – including balance of system components – installed at three irradiation levels and considering reference and future potential module efficiencies. Finally, a sensitivity analysis on perovskite lifetime has been performed, considering 10, 20 and 30 years. Contribution analysis of the impacts of each material and layer of PSC shows, that the use of Pb in metalorganic PSC does not result in significant environmental impacts as the major contributions to environmental indicators arise from the use of Ag and encapsulation materials. Solution-based PSC manufacturing was found to be less impactful to the environment than vapor-based fabrication, and roll-to-roll (RtR) printing uses less energy and generates the lowest emissions. PSC produced with RtR manufacturing could reach the same Energy Return on Energy Investment (EROI) as that of crystalline-Si PV within 12 years of life, whereas the most energy demanding spray coating on rigid substrates, would require a 20-yr life to match the EROI of 30-yr lasting silicon PV. This work lays the foundation for sustainability investigations in a comparative context of large-scale production and deployment of PSC. The results of this project have the potential to have a significant impact on the future of PV manufacturing, by providing industry, policy-makers, and academia with insights necessary to choose which, if any, lead-based solar cell life cycles are environmentally sustainable.

14 SOLAR ENERGY↗
DOE OSTI2025

Assessment of buffer-IPyC thermomechanical debonding behavior using new experimental strength data in BISON

TRIstructural ISOtropic (TRISO) fuel is a nuclear fuel commonly used in High Temperature Gas-cooled Reactors (HTGRs). A single sub-millimeter-diameter TRISO fuel particle consists of a spherical fuel kernel surrounded by four coating layers: a low-density pyrocarbon buffer layer, an inner pyrolytic carbon (IPyC) layer, a silicon carbide (SiC) layer, and an outer pyrolytic carbon (OPyC) layer. The kernel is commonly made of UO2 or a mixture of uranium carbide and uranium oxide (UCO). During reactor operation, the TRISO coating layers are subjected to irradiation-induced dimensional changes and the associated thermomechanical behavior of each layer. One of the observed behaviors is gap formation between the buffer and IPyC layer due to the porous buffer’s irradiation-induced shrinkage exceeding that of the IPyC layer. Not all irradiated particles will experience buffer-IPyC gap formation. The debonding may be partial, or it may be nearly total. However, from post-irradiation examination of UCO TRISO fuels irradiated as part of the Advanced Gas Reactor (AGR) Fuel Development and Qualification Program, it was concluded that partial buffer-IPyC debonding was the most common type of buffer-IPyC interaction. To predict TRISO thermomechanical performance, multi-physics models have been built that are being continually updated and refined. The BISON code is a finite element-based nuclear fuel performance code that may be used for 1D, 2D, and 3D TRISO particle simulations. This code is used to calculate fuel temperature, kernel swelling, buffer densification, thermal and irradiation creep, fracture, and fission gas production and release. One of the recent additions to the BISON code is the ability to model the process of layer debonding. This paper will focus on the simulation results of the improved BISON debonding model that will utilize updated strengths measured from irradiated AGR TRISO fuel particles. The new experimental strength data from micromechanical tests of irradiated TRISO fuel samples were exercised in the BISON simulations and compared to baseline strength data to assess their applicability in the models. This also includes updated buffer-IPyC bond strengths to simulate layer delamination. Based on current experimental observations it is noted that the buffer-IPyC separation occurs not exactly at the junction of these two layers, but more on the side of the buffer layer. That observation is also implemented in the TRISO interface debonding model. This improved modeling approach using experimental strength data to characterize buffer-IPyC debonding and its potential subsequent cracking will be presented in the paper along with comparisons to available experimental observations.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Impact of Irradiation-Induced Filter Heating on Calibration of NIR-Longpass-Filtered Reference Solar Cells

Reference solar cells play a crucial role in determining the performance of photovoltaic (PV) devices. In the performance calibration chain of mainstream single-junction PV technologies, common reference cell types include Si, KG-filtered Si, and GaAs cells. For emerging multijunction (MJ) PV technologies, such as CdTe/Si and perovskite/Si, Si reference cells with colored glass near-infrared-longpass (LP) filters like Schott RG-715 and 850 glass have been proposed. They offer a better spectral response that matches the bottom junctions of the emerging MJs, which could lead to lower uncertainties in performance measurements. However, this article reveals a prominent decrease in short-circuit current (ISC) during National Renewable Energy Laboratory's primary calibration over the course of minutes when using this type of LP-filtered reference cell, which could result in unacceptable measurement errors. Unlike quartz or KG filter glasses, LP colored glass filters demonstrate temperature-sensitive cut-on wavelength. When incident irradiance reaches these LP-filtered reference cells, the increased temperature due to light absorption causes a shift of the cut-on to longer wavelength. As a result, the device I SC exhibits a continuous decrease (approximately a 2.5% drop with RG850 LP filter in a 5-min duration) even when the device temperature is controlled at 25 degrees C. To address the temperature gradient issue between colored glass LP filter and the reference cell, we propose the direct integration of thin-film LP semiconductor layer on reference cells. This type of LP-filter-integrated cell has shown minimal temperature-related I SC variation and can serve as a more reliable reference cell source for accurate performance measurements.

14 SOLAR ENERGY↗
DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗