AC-LGAD silicon detectors with alternate gain layer for improved reliability.
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36 MATERIALS SCIENCE↗
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A new waveform analysis technique to extract good energy and position resolution from a dual-axis duo-lateral position-sensitive detector
The dual-axis duo-lateral position-sensitive silicon detector was developed to detect charged particles with high quality position and energy resolution. When these detectors were used with conventional signal processing electronics, an empirically determined correction was used to improve energy resolution. In this work, the waveforms from the detector after preamplification are studied in detail to investigate position information contained in the waveforms. A 7.22 MeV/nucleon alpha particle beam was impinged directly on a masked dual-axis duo-lateral detector. Data obtained using a 228 Th alpha particle source was also used. Here, by studying the waveform characteristics that give rise to the position-dependent distortions, a new summed trigger analysis method has been developed to significantly improve linearity in position reconstruction without sacrificing energy resolution.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Electron-proton spectrometer design summary
The electron-proton spectrometer (EPS) will be placed aboard the Skylab in order to provide data from which electron and proton radiation dose can be determined. The EPS has five sensors, each consisting of a shielded silicon detector. These provide four integral electron channels and five integral proton channels from which can be deduced four differential proton increments.
Source record↗
Broadband millimeter-wave GaAs transmitters and receivers using planar bow-tie antennas
We report broadband monolithic transmitters and receivers IC's for mm-wave electromagnetic measurements. The IC's use nonlinear transmission lines (NLTL) and sampling circuits as picosecond pulse generators and detectors. The pulses are radiated and received by planar monolithic bow-tie antennas, collimated with silicon substrate lenses and off-axis parabolic reflectors. Through Fourier transformation of the received pulse, 30-250 GHz free space gain-frequency measurements are demonstrated with an accuracy approximately = 0.17 dB, RMS.
Konishi, Y.↗
Wide Band Gap Radiation Detectors for Deep Space Science
Understanding how the Sun, Earth, and other objects in the solar system interact with the space radiation environment is crucial for improving activities of humans on Earth and in space. Low-power, low-noise, multidirectional robust detectors for detecting ions with a wide range of mass and energies will provide a more complete understanding of space environment physics. To meet these challenges, new ion detectors based on wide band gap (WBG) semiconductors are being developed for integration on a variety of deep space platforms. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies to enable improved instruments for space science missions. New detector technologies being developed at GRC include SiC solid-state devices as practical robust, thermally stable large area detectors for LET measurements in compact, stacked charged particle telescope. The low-noise, thermally stable nature of the WBG detectors allows a small multidirectional array of charged particle telescopes to be packed in a 6U CubeSat without active cooling for operation in lunar orbit or deep space. Using a full variety of different WBG detectors, an extremely compact instrument to provide multi-directional, comprehensive (composition, velocity, and direction) in-situ measurements of heavy ions in space plasma environments can be realized.
ion detectors↗
Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space
We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.
radiation hardness↗
Intelligent Pixel Detectors: Towards a Radiation Hard ASIC with On-Chip Machine Learning in 28 nm CMOS
Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout channels. With event rates as high as 40 MHz, these detectors will generate petabytes of data per second. To enable discovery within strict bandwidth and latency constraints, future trackers must be capable of fast, power efficient, and radiation hard data-reduction at the source. We are developing a radiation hard readout integrated circuit (ROIC) in 28nm CMOS with on-chip machine learning (ML) for future intelligent pixel detectors. We will show track parameter predictions using a neural network within a single layer of silicon and hardware tests on the first tape-outs produced with TSMC. Preliminary results indicate that reading out featurized clusters from particles above a modest momentum threshold could enable using pixel information at 40 MHz.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Radiation-Hard Smart-Pixel Detector ASIC ReadOut with Digital AI in 28nm
Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout channels. With event rates as high as 40 MHz, these detectors will generate petabytes of data per second. To enable discovery within strict bandwidth and latency constraints, future trackers must be capable of fast, power efficient, and radiation hard data-reduction at the source. This effort is pursuing the co-design development of high-performance readout smart pixel ASICs for a future Phase III High Luminosity upgrade of the Large Hadron Collider. A 1.6mm2 ASIC prototype was designed by Fermilab in CMOS 28 nm bulk process and submitted for manufacturing in February 2024. It leverages the analog front-end pixel design of a previous prototype fabricated and tested in 2023, which achieved a simulated detection level of ~400e- with 30fF input capacitance. The ROIC consists of two matrices of 16×16 smart pixels, each 25×25 μm2 in size. Each smart pixel contains a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. There is digital space for the integration of our fully combinatorial AI that performs momentum classification at the bunch crossing rate. The total power consumption is ∼6μW per pixel, which corresponds to ~1mW/cm2. The ASIC incorporates programmable front-end charge injection circuitry to generate pixel cluster charges during characterization. The cluster profile will be generated to duplicate hit characteristics of various momentum (pT). We will present early results from chip testing.
Parpillon, Benjamin↗
Beam test results of the Intermediate Silicon Tracker for sPHENIX
The Intermediate Silicon Tracker (INTT), a two-layer barrel silicon strip tracker, is a key component of the tracking system for sPHENIX at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory. The INTT is designed to enable the association of reconstructed tracks with individual RHIC bunch crossings. To evaluate the performance of preproduction INTT ladders and the readout chain, a beam test was conducted at the Research Center for Accelerator and Radioisotope Science, Tohoku University, Japan. This paper presents the performance of the INTT evaluated through studies of the signal-to-noise ratio, residual distribution, spatial resolution, hit-detection efficiency, and multiple track reconstruction.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions
Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.
Ruiz, Isaac↗
Definition phase study of the grand tour missions
The research to define an energetic particle experiment for the OPTGT-MJS missions is reported. The studies reported include: (1) the use of silicon dectectors for low energy, low flux level measurements in the presence of RTG radiation and trapped electrons, (2) high energy proton damage of lithium-drifted and surface barrier silicon detectors, (3) the gas Cerenkov counter, (4) systems for detection of trapped high-energy protons in the presence of trapped electrons, and (5) reliability and redundancy.
Simpson, J. A.↗
Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip
Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.
Mahan, John E.↗
Optical flameout detector
A device has been developed which monitors the presence of a flame within a combustion chamber. The optical flameout detection system responds to gross changes in combustor light intensity, which is monitored in two spectral bands. A photomultiplier tube makes optical measurements in the ultraviolet portion of the spectrum, and a silicon photodiode covers the visible region. The detectors, located outside the combustion chamber, receive the light energy radiated from the combustion process through fiber optic probes designed to operate in a high pressure environment. The optical fibers are aimed diagonally through the center of the injector at the combustion chamber wall downstream of the injector. The probes observe events occurring within a narrow conical-shaped field of view so that the system can quickly detect longitudinal movement of the flame front away from the injector. If a change in intensity of the flame is detected, the fuel supply to the combustion chamber is shut off, limiting the amount of unburned fuel in the combustion chamber which could reignite.
Borg, Stephen E.↗
Optical Flameout Detector
A device has been developed which monitors the presence of a flame within a combustion chamber. The optical flameout detection system responds to gross changes in combustor light intensity which is monitored in two spectral bands. A photomultiplier tube makes optical measurements in the ultraviolet portion of the spectrum and a silicon photodiode covers the visible region. The detectors, located outside the combustion chamber, receive the light energy radiated from the combustion process through fiber optic probes designed to operate in a high pressure environment. The optical fibers are aimed diagonally through the center of the injector at the combustion chamber wall downstream of the injector. The probe observes events occurring within a narrow conical-shaped field of view so that the system can quickly detect longitudinal movement of the flame front away from the injector. If a change in intensity of the flame is detected, the fuel supply to the combustion chamber is shut off limiting the amount of unburned fuel in the combustion chamber which could reignite.
Borg, Stephen E.↗
All-Particle Spectrum Measured by the ATIC Experiment
The Advanced Thin Ionization Calorimeter (ATIC), a balloon-borne experiment, is designed to investigate the composition and energy spectra of cosmic rays of charge Z = 1 to 26 over the energy range - 10(exp 11) - 10(exp 14) ev. The instrument consists of a silicon matrix charge detector, plastic-scintillator strip hodoscopes interleaved with graphite interaction targets, and an 18 radiation length deep, fully active bismuth germanate (BGO) calorimeter. ATIC has had two successful long duration balloon (LDB) flights launched from McMurdo Station, Antarc't'ica in 2000 and 2002. In this paper, we present the all-particle spectrum extracted from data collected during the ATIC flights, and compare it with results from other experiments at both lower and higher energies.
Ahn, H. S.↗
Assessment of the Influence of the RaD-X Balloon Payload on the Onboard Radiation Detectors
The NASA Radiation Dosimetry Experiment (RaD-X) stratospheric balloon flight mission, launched on 25 September 2015, provided dosimetric measurements above the Pfotzer maximum. The goal of taking these measurements is to improve aviation radiation models by providing a characterization of cosmic ray primaries, which are the source of radiation exposure at aviation altitudes. The RaD-X science payload consists of four instruments. The main science instrument is a tissue-equivalent proportional counter (TEPC). The other instruments consisted of three solid state silicon dosimeters: Liulin, Teledyne total ionizing dose (TID) and RaySure detectors. The instruments were housed in an aluminum structure protected by a foam cover. The structure partially shielded the detectors from cosmic rays but also created secondary particles, modifying the ambient radiation environment observed by the instruments. Therefore, it is necessary to account for the influence of the payload structure on the measured doses. In this paper, we present the results of modeling the effect of the balloon payload on the radiation detector measurements using a Geant-4 (GEometry ANd Tracking) application. Payload structure correction factors derived for the TEPC, Liulin, and TID instruments are provided as a function of altitude. Overall, the payload corrections are no more than a 7% effect on the radiation environment measurements.
Gronoff, Guilluame↗
Characterization of PIPS detectors for measurement of radioxenon
The International Monitoring System arm of the Comprehensive Nuclear-Test-Ban Treaty Organization utilizes sampling of atmospheric radioxenon to scan the world for nuclear testing events. Current designs utilized in the field involve plastic scintillator cells run in coincidence with Sodium Iodide (NaI) or High Purity Germanium (HPGe) detectors. The use of plastic scintillators as electron detectors exhibit some issues in comparison to other materials. Silicon detectors are analyzed as an alternative to plastic scintillators for beta detection based on their higher energy resolution and lowered memory effect. A radioxenon detection setup was created with the intent of measuring radioxenon samples using coincidence counting between silicon and NaI detectors as well as silicon and HPGe. Finally, the absolute efficiency of both setups is calculated and compared.
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors
A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.
Hoenk, Michael E.↗