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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Soft x ray window encapsulant for HgI2 detectors

HgI2 is an excellent semiconductor material for a low energy, room temperature x-ray spectrometer. The high values of the atomic numbers for its constituent elements gives high x-ray and gamma ray stopping power. The band gap of HgI2 is significantly higher than other commonly used semiconductors. Owing to the large value band gap, the leakage current for HgI2 devices is smaller, thus allowing low noise performance. Devices fabricated from HgI2 crystals have demonstrated energy resolution sufficient to distinguish the x-ray emission from the neighboring elements on the periodic table. Also the power requirements of HgI2 are very low. These characteristics make a HgI2 spectrometer an ideal component in a satellite based detection system. Unfortunately, HgI2 crystals tend to deteriorate with time, even if protected by standard semiconductor encapsulants. This degradation ruins the performance of the device in terms of its energy resolution and pulse amplitude. The degrading mechanism is believed to be material loss occurring from below the electrodes, due to high vapor pressure of HgI2 at room temperature. To address this major obstacle to rapid expansion of HgI2 technology, a research program aimed at improving device stability by encapsulation with inert polymeric materials was carried out. The program focused specifically on optimizing the encapsulant materials and their deposition techniques. The principal objectives for this program were device encapsulation, device testing, and accelerated testing to ensure very long term stability of these high resolution sensors. A variety of encapsulants were investigated with the selection criteria based on their chemical diffusion barrier properties, mechanical stability, reactivity, and morphology of encapsulant films. The investigation covered different classes of encapsulants including solvent based encapsulants, vapor deposited encapsulants, and plasma polymerized encapsulants. A variety of characterization techniques were employed to examine their effectiveness in stabilizing HgI2 devices; these included permeability evaluation, vacuum and heat testing, scanning electron microscopy (SEM) as well as studying the detector performance of coated detectors. The plasma polymerized films appear to have entirely solved the HgI2 degradation problem. Another achievement of this program was the development of an accelerated testing technique which correlates extremely well with long term tesing.

Entine, G.↗
NASA NTRS1987

Investigation of temperature and concentration oscillations in the directional solidification of Pb-Sn-Te

Directional solidification of the pseudobinary compound semiconductor material Pb sub 1-x Sn sub x Te by the Bridgman crystal growth process will be studied. Natural convection in the molten sample will be visualized with a novel electrochemical cell technique that employs the solid electrolyte material yttria-stabilized zirconia. Mass transfer by both diffusion and convection will be measured by detecting the motion of oxygen tracer in the liquid. Additional applications for electrochemical cells in semiconductor crystal growth are suggested. Unsteady convection in the melt will also be detected by the appearance of temperature oscillations. The purpose of this study is to experimentally characterize the overstable conditions for a Pb sub 1-x Sn sub x Te melt in the vertical Bridgman crystal growth technique and use a linear analysis to predict the onset of convection for this system.

Anderson, T. J.↗
NASA NTRS2003

Solid state potentiometric gaseous oxide sensor

A solid state electrochemical cell (10a) for measuring the concentration of a component of a gas mixture (12) includes first semiconductor electrode (14) and second semiconductor electrode (16) formed from first and second semiconductor materials, respectively. The materials are selected so as to undergo a change in resistivity upon contacting a gas component, such as CO or NO. An electrolyte (18) is provided in contact with the first and second semiconductor electrodes. A reference cell can be included in contact with the electrolyte. Preferably, a voltage response of the first semiconductor electrode is opposite in slope direction to that of the second semiconductor electrode to produce a voltage response equal to the sum of the absolute values of the control system uses measured pollutant concentrations to direct adjustment of engine combustion conditions.

Wachsman, Eric D.↗
NASA NTRS1995

On the hitchhiker Robot Operated Materials Processing System: Experiment data system

The Space Shuttle Discovery STS-64 mission carried the first American autonomous robot into space, the Robot Operated Materials Processing System (ROMPS). On this mission ROMPS was the only Hitchhiker experiment and had a unique opportunity to utilize all Hitchhiker space carrier capabilities. ROMPS conducted rapid thermal processing of the one hundred semiconductor material samples to study how micro gravity affects the resulting material properties. The experiment was designed, built and operated by a small GSFC team in cooperation with industry and university based principal investigators who provided the material samples and data interpretation. ROMPS' success presents some valuable lessons in such cooperation, as well as in the utilization of the Hitchhiker carrier for complex applications. The motivation of this paper is to share these lessons with the scientific community interested in attached payload experiments. ROMPS has a versatile and intelligent material processing control data system. This paper uses the ROMPS data system as the guiding thread to present the ROMPS mission experience. It presents an overview of the ROMPS experiment followed by considerations of the flight and ground data subsystems and their architecture, data products generation during mission operations, and post mission data utilization. It then presents the lessons learned from the development and operation of the ROMPS data system as well as those learned during post-flight data processing.

Kizhner, Semion↗
NASA NTRS2000

Method For Growth of Crystal Surfaces and Growth of Heteroepitaxial Single Crystal Films Thereon

A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon is discussed. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).

Powell, J. Anthony↗
NASA NTRS1996

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗
NASA NTRS1985

High-Output Injection Laser

Terraced double-heterojunction large optical cavity laser features high output in single optical mode. Semiconductor laser consists of body of single-crystal semiconductor material, typically composed of Group III to V compounds in form of rectangular parallelepiped. One of laser end faces partially transparent so that light may be emitted from it. Lateral thickness variation of active and guide layers in semiconductor laser produces confinement of propagating laser beam in lateral direction.

Connolly, J. C.↗
NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗
NASA NTRS1976

Space processing float zone thermal analysis

Thermal analysis (BETA) computer program adaptations were prepared to analyze phase change histories in crystal specimens. The first program (BETA-CYL) treats right circular cylinder configurations and the second, more general, program (BETA-BOR) treats a generalized body-of-revolution configuration. A series of computer runs were made for silicon material to determine boundary conditions which produce flat solidification interfaces while, at the same time, minimizing peak temperatures in the molten zone. Flat solidification interfaces are a goal believed by some investigators to be required to produce high quality semiconductor materials. The thermal effects of convection in a molten zone were examined and found to be negligible in comparison to the conduction heat transfer of the melt.

Pogson, J. T.↗
NASA NTRS1982

Feasibilty analyses of electroepitaxial research and development accommodations. Volume 2: Electroepitaxial growth of GaAs

The technique of electromigration, i.e., electric field induced forced convection, can be used to grow semiconductor material and other compounds from solution by passing electric current through the growth interface while the temperature of the system is maintained constant. Current controlled electromigration, referred to as electroepitaxy, was successfully applied to grow epitaxial layers of various semiconductors and garnets.

Source record↗
NASA NTRS1995

Photoelectrochemical etching of silicon carbide (SiC) and its characterization

Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

Collins, D. M.↗
NASA NTRS2004

Scanning Tunneling Optical Resonance Microscopy Developed

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Bailey, Sheila G.↗
NASA NTRS1994

Sensor Detects Semiconductor Escaping From Ampoule

Electrical resistance and temperature change upon exposure to semiconductors. Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Step increase in temperature and resistance of sensor indicates presence of hot GaAs. Sensor used to shut down furnace automatically if ampoule breaks and prevents further release of molton semiconductor, which could quickly breach surrounding thin wall of cartridge, damage furnace, and/or release toxic vapors into surrounding area.

Watring, Dale A.↗
NASA NTRS2000

The Life Cycle Application of Intelligent Software Modeling for the First Materials Science Research Rack

Marshall Space Flight Center (MSFC) has been funding development of intelligent software models to benefit payload ground operations for nearly a decade. Experience gained from simulator development and real-time monitoring and control is being applied to engineering design, testing, and operation of the First Material Science Research Rack (MSRR-1). MSRR-1 is the first rack in a suite of three racks comprising the Materials Science Research Facility (MSRF) which will operate on the International Space Station (ISS). The MSRF will accommodate advanced microgravity investigations in areas such as the fields of solidification of metals and alloys, thermo-physical properties of polymers, crystal growth studies of semiconductor materials, and research in ceramics and glasses. The MSRR-1 is a joint venture between NASA and the European Space Agency (ESA) to study the behavior of different materials during high temperature processing in a low gravity environment. The planned MSRR-1 mission duration is five (5) years on-orbit and the total design life is ten (IO) years. The MSRR-1 launch is scheduled on the third Utilization Flight (UF-3) to ISS, currently in February of 2003). The objective of MSRR-1 is to provide an early capability on the ISS to conduct material science, materials technology, and space product research investigations in microgravity. It will provide a modular, multi-user facility for microgravity research in materials crystal growth and solidification. An intelligent software model of MSRR-1 is under development and will serve multiple purposes to support the engineering analysis, testing, training, and operational phases of the MSRR-1 life cycle development. The G2 real-time expert system software environment developed by Gensym Corporation was selected as the intelligent system shell for this development work based on past experience gained and the effectiveness of the programming environment. Our approach of multi- uses of the simulation model and its intuitive graphics capabilities is providing a concurrent engineering environment for rapid prototyping and development. Operational schematics of the MSRR-1 electrical, thermal control, vacuum access, and gas supply systems, and furnace inserts are represented graphically in the environment. Logic to represent first order engineering calculations is coded into the knowledge base to simulate the operational behavior of the MSRR-1 systems. An example of engineering data provided includes electrical currents, voltages, operational power, temperatures, thermal fluid flow rates. pressures, and component status indications. These type of data are calculated and displayed at appropriate instrumentation points, and the schematics are animated to reflect the simulated operational status of the MSRR-1. The software control functions are also simulated to represent appropriate operational behavior based on automated control and response to commands received by the crew or ground controllers. The first benefit of this simulation environment is being realized in the high fidelity engineering analysis results from the electrical power system G2 model. Secondly, the MSRR-1 simulation model will be embedded with a hardware mock-up of the MSRR-1 to provide crew training on MSRR-1 integrated payload operations. G2 gateway code will output the simulated instrumentation values, termed as telemetry, in a flight-like data stream so that the crew has realistic and accurate simulated MSRR-1 data on the flight displays which will be designed for crew use. The simulation will also respond appropriately to crew or ground initiated commands, which will be part of normal facility operations. A third use of the G2 model is being planned; the MSRR-1 simulation will be integrated with additional software code as part of the test configuration of the primary onboard computer, or Master Controller, for MSRR-1. We will take advantage of the G2 capability to simulate the flight like data stream to test flight software responses and behavior. A fourth use of the G2 model will be to train the Ground Support Personnel that will monitor the MSRR-1 systems and payloads while they are operating aboard the ISS. The intuitive, schematic based environment will provide an excellent foundation for personnel to understand the integrated configuration and operation of the MSRR-1, and the anticipated telemetry feedback based on operational modes of the equipment. Expert monitoring features will be enhanced to provide a smart monitoring environment for the operators. These features include: (1) Animated, intuitive schematic-based displays which reflect telemetry values, (1) Real-time plotting of simulated or incoming sensor values, (3) High/Low exception monitoring for analog data, (4) Expected state monitoring for discrete data, (5) Data trending, (6) Automated malfunction procedure execution to diagnose problems, (7) Look ahead capability to planned MSRR-1 activities in the onboard timeline. And finally, the logic to calculate telemetry values will be deactivated, and the same environment will interface to the incoming data for the real-time telemetry stream to schematically represent the onboard hardware configuration. G2 will be the foundation for the real-time monitoring and control environment. In summary, our MSRR-1 simulation model spans many elements of the life cycle development of this project: Engineering Analysis, Test and Checkout, Training of Crew and Ground Personnel, and Real-time monitoring and control. By utilizing the unique features afforded by an expert system development environment, we have been able to synergize a powerful tool capable of addressing our project needs at every phase of project development.

Rice, Amanda↗
NASA NTRS2004

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Ting, David Z.-Y.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1993

New technologies for UV detectors

Several technologies are currently being developed, leading to substantial improvements in the performance of UV detectors or significant reductions in power or weight. Four technologies discussed are (1) thin-film coatings to enhance the UV sensitivity of CCD's, (2) highly innovative magnet assemblies that dramatically reduce weight and result in virtually no external flux, (3) new techniques for curving microchannel plates (MCP's) so that single plates can be used to prevent ion feedback and present highly localized charge clouds to an anode structure, and (4) high-performance alternatives to glass-based MCP's. In item (2), for example, very robust magnets are made out of rare earth materials such as samarium cobalt, and cladding magnets are employed to prevent flux from escaping from the detector into the external environment. These new ultralight magnet assemblies are able to create strong, exceptionally uniform magnetic fields for image intensification and focusing of photoelectrons. The principle advantage of such detectors is the quantum efficiencies of 70-80 percent obtained throughout ultraviolet wavelengths (900-2000 A), the highest of any device. Despite the improvements achieved under item (3), high-performance alternatives to conventional glass-based MCP's potentially offer three distinct new advantages that include (1) a 30-100-fold improvement in dynamic range resulting in correspondingly higher signal-to-noise ratios, (2) the use of pure dielectric and semiconductor materials that will not outgas contaminants that eventually destroy photocathodes, and (3) channels that have constant spacing providing long-ranged order since the plates are made using photolithography techniques from the semiconductor industry. The manufacturers of these advanced-technology MCP's, however, are a couple of years away from actually producing a functioning image intensifier. In contrast to the use of CCD's for optical, ground based observations, there is no single detector technology in the ultraviolet that dominates or is as universally suitable for all applications. Thus, several technological problems, recent advances, and the impact that these new enabling technologies represent for UV applications are addressed.

Joseph, C. L.↗