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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better performance and integration than traditional oxide ferroelectrics with semiconductors such as Si, SiC, and III-V compounds. However, wurtzite-type ferroelectrics generally require enormous electric fields, approaching breakdown, to reverse their polarization. The underlying switching mechanism(s), especially for multinary compounds and alloys, remains elusive. Here, we examine the switching behaviors in Al 1-x Sc x N alloys and wurtzite-type multinary candidate compounds we recently computationally identified. We find that switching in these tetrahedrally coordinated materials proceeds via a variety of nonpolar intermediate structures and that switching barriers are dominated by the more-electronegative cations. For Al 1-x Sc x N alloys, we find that the switching pathway changes from a collective mechanism to a lower-barrier mechanism enabled by inversion of individual tetrahedra with increased Sc composition. Our findings provide insights for future engineering and realization of wurtzite-type materials and open a door to understanding domain motion.

36 MATERIALS SCIENCE↗
NASA NTRS1974

LST design considerations

Following a review of the major LST program elements, LST/Space Shuttle interface characteristics and Shuttle performance capabilities are reviewed. The influence these considerations have on the LST configuration, design, and on-orbit servicing is discussed. Significant systems trade studies and design constraints associated with the Shuttle/LST interface are discussed, including telescope focal ratio limitations and on-orbit access provisions for maintenance. LST internal interfaces are described with particular emphasis on simplicity and minimization of integration costs. Characteristics and design requirements of the OTA, SI, and SSM also are discussed with emphasis on critical subsystem requirements.

Olivier, J. R.↗
NASA NTRS1991

Molecular-Beam Epitaxy Of IrSi3

Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

Lin, True-Lon↗
NASA NTRS1993

Comparative solar EUV flux for the San Marco ASSI

The Airglow and Solar Spectrometer Instrument (ASSI) on the San Marco D/L satellite has measured solar extreme ultraviolet irradiances. The data are currently being released for analysis. As a preliminary step in evaluating this important dataset, modeled solar irradiances from 4 to 105 nm are presented for comparison to the San Marco data. The comparable flux for March-December 1988 is obtained from a revised and extended empirical solar EUV model derived from OSO 1, OSO 3, OSO 4, OSO 6, AEROS A, and AE-E satellite and six rocket flight datasets. Solar rotational features are prominent on several occasions in the model time series. A useful example is the modeled integrated flux between 30-31 nm which includes the Si XI (30.3-nm) and He II (30.4-nm) irradiance. The modeled flux in this 1-nm range shows both an absolute 22 percent increase from beginning to end of mission and a solar rotational variability with a typical peak-to-valley ratio of 14 percent.

Tobiska, W. K.↗
NASA NTRS1995

Characterization and Application of a Grazing Angle Objective for Quantitative Infrared Reflection Microspectroscopy

A grazing angle objective on an infrared microspectrometer is studied for quantitative spectroscopy by considering the angular dependence of the incident intensity within the objective's angular aperture. The assumption that there is no angular dependence is tested by comparing the experimental reflectance of Si and KBr surfaces with the reflectance calculated by integrating the Fresnel reflection coefficient over the angular aperture under this assumption. Good agreement was found, indicating that the specular reflectance of surfaces can straight-forwardly be quantitatively integrated over the angular aperture without considering non-uniform incident intensity. This quantitative approach is applied to the thickness determination of dipcoated Krytox on gold. The infrared optical constants of both materials are known, allowing the integration to be carried out. The thickness obtained is in fair agreement with the value determined by ellipsometry in the visible. Therefore, this paper illustrates a method for more quantitative use of a grazing angle objective for infrared reflectance microspectroscopy.

Pepper, Stephen V.↗
DOE OSTI2023

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces

Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically manipulated for quantum information processing. Here, we integrate MoS 2 monolayers with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface electric and magnetic Mie modes, the intensity and lifetime of the emission of neutral excitons, trions, and defect bound excitons can be enhanced and shortened, respectively, while the spectral shape can be modified. Additionally, the degree of polarization (DOP) of exciton and trion emission from the valley can be symmetrically enhanced at 100 K. The DOP increase is attributed to both the metasurface-enhanced chiral absorption of light and the metasurface-enhanced exciton emission from the Purcell effect. Finally, combining Si-compatible photonic design with large-scale 2D materials integration, our work makes an important step toward on-chip valleytronic applications approaching room-temperature operation.

2D materials↗
DOE OSTI2021

Ultradoping Boron on Si(100) via Solvothermal Chemistry

Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next-generation electronic material. Commercialization of ultradoping is currently limited by gas-phase ultra-high vacuum requirements. Solvothermal chemistry is amenable to scale-up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant-Si surface reactions are not well-developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (~1e14 cm 2 ) by using a solvothermal process. Surface characterizations indicate the catalyst cross-reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct B-Si surface bonds. Finally, this proof-of-principle work lays groundwork for emerging solvothermal ultradoping processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory

Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).

3-D NAND↗
NASA NTRS2012

Characterization Approaches to Place Invariant Sites on SI-Traceable Scales

The effort to understand the Earth's climate system requires a complete integration of remote sensing imager data across time and multiple countries. Such an integration necessarily requires ensuring inter-consistency between multiple sensors to create the data sets needed to understand the climate system. Past efforts at inter-consistency have forced agreement between two sensors using sources that are viewed by both sensors at nearly the same time, and thus tend to be near polar regions over snow and ice. The current work describes a method that would provide an absolute radiometric calibration of a sensor rather than an inter-consistency of a sensor relative to another. The approach also relies on defensible error budgets that eventually provides a cross comparison of sensors without systematic errors. The basis of the technique is a model-based, SI-traceable prediction of at-sensor radiance over selected sites. The predicted radiance would be valid for arbitrary view and illumination angles and for any date of interest that is dominated by clear-sky conditions. The effort effectively works to characterize the sites as sources with known top-of-atmosphere radiance allowing accurate intercomparison of sensor data that without the need for coincident views. Data from the Advanced Spaceborne Thermal Emission and Reflection and Radiometer (ASTER), Enhanced Thematic Mapper Plus (ETM+), and Moderate Resolution Imaging Spectroradiometer (MODIS) are used to demonstrate the difficulties of cross calibration as applied to current sensors. Special attention is given to the differences caused in the cross-comparison of sensors in radiance space as opposed to reflectance space. The radiance comparisons lead to significant differences created by the specific solar model used for each sensor. The paper also proposes methods to mitigate the largest error sources in future systems. The results from these historical intercomparisons provide the basis for a set of recommendations to ensure future SI-traceable cross calibration using future missions such as CLARREO and TRUTHS. The paper describes a proposed approach that relies on model-based, SI-traceable predictions of at-sensor radiance over selected sites. The predicted radiance would be valid for arbitrary view and illumination angles and for any date of interest that is dominated by clear-sky conditions. The basis of the method is highly accurate measurements of at-sensor radiance of sufficient quality to understand the spectral and BRDF characteristics of the site and sufficient historical data to develop an understanding of temporal effects from changing surface and atmospheric conditions.

Thome, Kurtis↗
DOE OSTI2023

The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device

Here this work shows that the static random access memory (SRAM) error rate for a commercial 65-nm device in a dose rate environment can be highly dependent upon the integrated dose (dose rate × pulse duration). While the typical metric for such testing is dose rate upset (DRU) level in rad(Si)/s, a series of dose rate experiments at Little Mountain Test Facility (LMTF) shows dependence on the integrated dose. The error rate is also found to be dependent on the core voltage, and the preradiation value of the bits. We believe that these effects are explained by a well charge depletion caused by gamma ray photocurrent.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Cr-doped U 3 Si 2 composite fuels under steam corrosion

Dense Cr-doped U 3 Si 2 composite fuels were manufactured by spark plasma sintering, and the effects of Cr addition on mechanical properties and oxidation resistance were investigated. Furthermore, dynamic oxidation testing by thermogravimetric analysis revealed significantly improved oxidation resistance of U 3 Si 2 with minimal doping of 3 wt% Cr. The onset oxidation temperature increased to above 550 °C in air and ~520 °C in steam conditions for the 5 wt% and 10 wt% Cr-doped composites. Steam corrosion testing under 360 °C for 24 hours indicated well-maintained pellet integrity without pulverization for the 10 wt% Cr-doped U 3 Si 2 pellet which only showed minor surface oxidation. The first promising results open up the possibility of designing and manufacturing metal additive-doped U 3 Si 2 composite fuels with significantly-improved corrosion resistance as a potential candidate for accident tolerant fuels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Traceability of Surface Longwave Irradiance Measurements to SI Using the IRIS Radiometers

The traceability of the World Infrared Standard Group of Pyrgeometers (WISG) was established through the comparison to several independently calibrated radiometers (Infrared Integrating Sphere Radiometer (IRIS), Absolute Cavity Pyrgeometer (ACP), Atmospheric Emittance Radiance Interferometer (AERI)). The traceability of the longwave irradiance measurements to SI was validated by a comparison of two independently characterized blackbody cavities.

ACR↗
DOE OSTI2023

Photochemical Diodes for Simultaneous Bias-Free Glycerol Valorization and Hydrogen Evolution

Artificial photosynthesis offers a route to producing clean fuel energy. However, the large thermodynamic requirement for water splitting along with the corresponding sluggish kinetics for the oxygen evolution reaction (OER) limits its current practical application. Here, we offer an alternative approach by replacing the OER with the glycerol oxidation reaction (GOR) for value-added chemicals. By using a Si photoanode, a low GOR onset potential of -0.05 V vs RHE and a photocurrent density of 10 mA/cm 2 at 0.5 V vs RHE can be reached. Coupled with a Si nanowire photocathode for the hydrogen evolution reaction (HER), the integrated system yields a high photocurrent density of 6 mA/cm 2 with no applied bias under 1 sun illumination and can run for over 4 days under diurnal illumination. In conclusion, the demonstration of the GOR-HER integrated system provides a framework for designing bias-free photoelectrochemical devices at appreciable currents and establishes a facile approach to artificial photosynthesis.

09 BIOMASS FUELS↗
DOE OSTI2019

Infrared absorption cross section of SiN x thin films

At the molecular level, resonant coupling of infrared radiation with oscillations of the electric dipole moment determines the absorption cross section, $σ$. The parameter σ relates the bond density to the total integrated absorption. In this work, $σ$ was measured for the Si–N asymmetric stretch mode in SiN x thin films of varying composition and thickness. Thin films were deposited by low pressure chemical vapor deposition at 850 °C from mixtures of dichlorosilane and ammonia. σ for each film was determined from Fourier transform infrared spectroscopy and ellipsometric measurements. Increasing the silicon content from 0% to 25% volume fraction amorphous silicon led to increased optical absorption and a corresponding systematic increase in σ from 4.77 × 10 –20 to 6.95 × 10 –20 cm 2 , which is consistent with literature values. The authors believe that this trend is related to charge transfer induced structural changes in the basal SiN x tetrahedron as the volume fraction of amorphous silicon increases. Furthermore, experimental $σ$ values were used to calculate the effective dipole oscillating charge, q, for four films of varying composition. The authors find that q increases with increasing amorphous silicon content, indicating that compositional factors contribute to modulation of the Si–N dipole moment. Additionally, in the composition range investigated, the authors found that $σ$ agrees favorably with trends observed in films deposited by plasma enhanced chemical vapor deposition.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Ir/IrSi3/Si Schottky-Barrier Infrared Detector

Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

Lin, True-Lon↗
DOE OSTI2023

Coherent Wavelength Switched Co-Packaged Optics to Disrupt Datacenters/HPC (AKA "QRock") (Final Report)

This project resulted in multiple first-of-a-kind demonstrations, including two generations of transmitters, a receiver, and a complete coherent link. The transmitter architecture, based on EAMs to generate QPSK modulation was first demonstrated in InP, which has limitations for scaling up to chips with multiple channels for full WDM architectures, and implementing the densities and level of integration needed to implement co-packaging with electronics. Our work resulted in the first demonstration of this architecture on a Si platform compatible with copackaging, and our working prototypes illustrated the potential of the approach. The link demonstration was also the first coherent optical link realized in a multi-micron waveguide platform. For the transmitters, integrating efficient III-V EAM devices into the large waveguide Si platform simultaneously enables significant reduction in driver power consumption while minimizing optical losses in routing and fiber coupling. On the receiver side, optical coupling and propagation losses are also minimized in the multi-micron platform, reducing required laser optical power which improves link energy efficiency. The measurement results presented in the final report demonstrate that we achieved the speed objectives for the program (112Gb/s: 56Gbaud QPSK), albeit at a higher BER than targeted. The report provides assessments of the low-powercoherent link architecture and associated components developed under the program from both technological and commercial viewpoints.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2026

Thermal cycling-driven microstructural changes of eutectic Al–Si phase change materials in SS304 containers revealed by multi-modal imaging

Aluminum-based Al–Si alloys are widely used as phase change materials (PCMs) in thermal energy storage (TES) systems owing to their high volumetric latent heat and superior thermal conductivity. However, their long-term reliability is limited by degradation processes that remain insufficiently understood. In this work, we employ a multimodal, correlative characterization framework to systematically resolve the degradation behavior of eutectic Al–Si PCMs in contact with SS304 containers under repeated thermal cycling. By integrating high-resolution electron microscopy, three-dimensional X-ray fluorescence (3D XRF) imaging, and differential scanning calorimetry (DSC), we directly link spatially resolved compositional and microstructural evolution to changes in thermophysical properties. The correlative analysis reveals that elemental leaching of Fe, Cr, and Ni from the stainless-steel container into the PCM drives the formation of intermetallic compounds (IMCs) both at the interface and within the bulk PCM, leading to pronounced compositional heterogeneity. These interfacial reactions and diffusion-induced transformations progressively destabilize the Al–Si eutectic, reducing the effective phase-transforming fraction. Consistent with these observations, DSC measurements show a decrease in melting temperature and latent heat of fusion with thermal cycling. These results underscore the critical influence of interfacial reactions and material compatibility on the stability, durability, and overall performance of Al–Si-based TES systems.

25 ENERGY STORAGE↗