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At least 145 records · Page 8

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗

SiC JFET Transistor Circuit Model for Extreme Temperature Range

A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

Neudeck, Philip G.↗

Fabrication and Characterization of Brazed Joints for SiC-Metallic Systems Utilizing Refractory Metals

Metal to ceramic joining plays a key role for the integration of ceramics into many nuclear, ground and aero based technologies. In order to facilitate these technologies, the active metal brazing of silicon carbide (CVD beta-SiC, 1.1 mm thick, and hot-pressed alpha-SiC, 3 mm thick) to the refractory metals molybdenum and tungsten using active braze alloys was studied. The joint microstructure, composition, and microhardness were evaluated by optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and Knoop hardness testing. The braze alloys, Cusil-ABA, Ticusil and Copper-ABA, all formed sound joints with excellent wetting and chemical bonding with the SiC substrate. Despite the close thermal expansion match between the metal substrates and SiC, hairline cracks formed in alpha-SiC while beta-SiC showed no signs of residual stress cracking. The use of ductile interlayers to reduce the effect from residual stresses was investigated and joints formed with copper as an interlayer produced crack free systems utilizing both CVD and hot-pressed SiC.

Coddington, Bryan↗

SiC Composite Turbine Vanes

Turbine inlet guide vanes have been fabricated from composites of silicon carbide fibers in silicon carbide matrices. A unique design for a cloth made from SiC fibers makes it possible to realize the geometric features necessary to form these vanes in the same airfoil shapes as those of prior metal vanes. The fiber component of each of these vanes was made from SiC-fiber cloth coated with boron nitride. The matrix was formed by chemical-vapor infiltration with SiC, then slurry-casting of SiC, followed by melt infiltration with silicon. These SiC/SiC vanes were found to be capable of withstanding temperatures 400 F (222 C) greater than those that can be withstood by nickel-base-superalloy turbine airfoils now in common use in gas turbine engines. The higher temperature capability of SiC/SiC parts is expected to make it possible to use them with significantly less cooling than is used for metallic parts, thereby enabling engines to operate more efficiently while emitting smaller amounts of NOx and CO. The SiC/SiC composite vanes were fabricated in two different configurations. Each vane of one of the configurations has two internal cavities formed by a web between the suction and the pressure sides of the vane. Each vane of the other configuration has no web (see Figure 1). It is difficult to fabricate components having small radii, like those of the trailing edges of these vanes, by use of stiff stoichiometric SiC fibers currently preferred for SiC/SiC composites. To satisfy the severe geometric and structural requirements for these vanes, the aforementioned unique cloth design, denoted by the term Y-cloth, was conceived (see Figure 2). In the regions away from the trailing edge, the Y-cloth features a fiber architecture that had been well characterized and successfully demonstrated in combustor liners. To form a sharp trailing edge (having a radius of 0.3 mm), the cloth was split into two planes during the weaving process. The fiber tows forming the trailing-edge section were interlocked, thereby enhancing through-thickness strength of the resulting composite material. For vanes of the webless configuration, each made from a layup of six plies of Ycloth, the length of each Y-cloth layer was cut so that the two strips corresponding to the aforementioned two planes would wrap around the perimeter of a graphite vane preform tool with a 10-mm overlap. The overlap was used to join the two strips in a fringe splice. To make the external sixth ply, a standard woven cloth was cut to the required final length and a fringe splice joined the two ends of the cloth at the trailing edge. The cloth was then prepregged. The entire assembly was then placed into an aluminum compaction tool designed to form the outer net shape of the vane. After the prepreg material was allowed to dry, the preform was removed from the aluminum tooling and placed into an external graphite tool before being shipped to a vendor for matrix infiltration. To make the SiC fiber preform for a vane having an internal web, a slightly different initial approach was followed. Each of two sections forming the internal cavities (and ultimately the web) was created by first slipping two concentric layers of a two-dimensional, 2-by-2, 45 - braided tube around a net-shape graphite mandrel. The tubes on both mandrels were prepregged and allowed to dry. The resulting two subassemblies were put together, then four additional plies were wrapped around them in the same fashion as that described above for the six plies of the vaneless configuration. The consolidation of the SiC fiber preforms into SiC/SiC composite parts was performed by commercial vendors using their standard processes. The capability of two of the webless SiC/SiC turbine vanes was demonstrated in tests in a turbine environment. The tests included 50 hours of steady-state operation and 102 two-minute thermal cycles. A surface temperature of 1,320 C was reached during the tests.

Calomino, Anthony M.↗

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

3-D printing↗

Effects of mechanically alloying Al 2 O 3 and Y 2 O 3 additives on the liquid phase sintering behavior and properties of SiC

In order to improve the sintering of SiC, mixtures of Al 2 O 3 and Y 2 O 3 powders are commonly included as sintering additives. The aim of this work was to use mechanically alloyed Al 2 O 3 –Y 2 O 3 mixtures as sintering additives to promote liquid phase sintering of SiC using spark plasma sintering. The results showed that milling reduced the particle size of the powders and led to the formation of complex oxide phases (YAP, YAM, and YAG) at low temperatures. As the ball milling time increased, the mass loss of specimens sintered with mechanically alloyed Al 2 O 3 –Y 2 O 3 mixtures decreased, and accordingly the relative density increased. However, the hardness and flexural strength of sintered SiC specimens first increased and then decreased. Because the specimens prepared with oxides milled for a long time contained too much YAG/YAP and accordingly too much liquid at sintering temperature. This negatively affected the mechanical properties of the SiC specimens because of the increased volume of the complex oxide phases, which have inferior mechanical properties to SiC, in the sintered specimens. In conclusion, when the ball milling time was 6h, the hardness (24.02 GPa) and flexural strength (655.61 MPa) of the SiC specimens reached maximum values.

36 MATERIALS SCIENCE↗

In-situ microstructure observation of oxidized SiC layer in surrogate TRISO fuel particles under krypton ion irradiation

In accidental scenarios of high temperature gas-cooled reactors, both oxidation of and irradiation to the SiC layer in tri-structural-isotropic (TRISO) fuel particles can change the microstructure and integrity of the fuel elements. Here, in the present study, microstructure and defect evolution in the oxidized SiC layer of surrogate TRISO fuel particles under 1.2 MeV krypton ion irradiation was observed by in-situ transmission electron microscopy. The SiC layers oxidized in water vapor at 1200 °C were irradiated azt room temperature and 800 °C and at damage levels of 0.28–11.2 dpa, respectively. SiC and SiO 2 were found to still be in their crystal structures at the damage level of 11.2 dpa at 800 °C, while SiC was observed to have been amorphized at only 0.56 dpa irradiation at room temperature. The defect number density at 800 °C was an order of magnitude lower than that in the sample irradiated at room temperature. Also, crystalline SiO 2 had higher radiation resistance compared to SiC. A defect reaction rate theory was utilized to understand the fundamental defect evolution process and irradiation resistance difference.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Determination of neutron irradiation temperatures of SiC using electrical resistivity method

The irradiation temperature of silicon carbide (SiC) was determined post-irradiation by examination of the recovery of the electrical resistivity due to thermal annealing in a rapid heating/cooling optical furnace. High-purity, high-resistivity grade SiC is routinely used as a passive temperature monitor in neutron irradiation studies at the High Flux Isotope Reactor (HFIR), and this paper presents an alternative automated technique for determination of the irradiation temperature the SiC experienced. Neutron collisions with the atoms results in displaced lattice atoms (interstitials) that act as electron donors yielding a significant decrease in electrical resistivity. The irradiation defects become thermodynamically unstable and start to recombine, when annealed above the irradiation temperature, resulting in a recovery of the electrical resistivity. The resistivity is measured at a fixed elevated temperature above ambient, which is below the target irradiation temperature. When the resistivity is plotted as a function of annealing temperatures, a clear increase is observed due to the recovery of irradiation defects. We have demonstrated that this electrical resistivity measurement of SiC is effective to determine irradiation temperature of SiC. In conclusion, energy levels of various defects in SiC were calculated from Arrhenius plots of electrical conductivity versus inverse temperature.

36 MATERIALS SCIENCE↗

Effects of elevated temperature exposure on the residual stress state and microstructure of PVD Cr coatings on SiC investigated via in situ X-ray diffraction and transmission electron microscopy

Pure Cr coatings are being considered as corrosion-resistant layers for SiC-SiC f composite fuel cladding in light water reactors. The residual stress state and interdiffusion behavior of Cr coatings deposited on SiC substrates using bipolar high-power impulse magnetron sputtering (B-HiPIMS) and direct current impulse magnetron sputtering (DCMS) were studied using in situ X-ray diffraction experiments at 300 °C, 700 °C, and 1200 °C. After elevated temperature exposure, evolution of the coating microstructure and coating/substrate interdiffusion was characterized by transmission electron microscopy. The compressive residual stress of the dense B-HiPIMS coating at room temperature was gradually relieved at 300 °C, while the stress transitioned to a tensile state at 700 °C. Grain growth of the Cr coating and a Cr–SiC interdiffusion layer consisting of newly formed Cr–C and Cr–Si phases were observed in the B-HiPIMS coating after exposure at 700 °C. The phases in the interdiffusion layer were identified to be Cr 7 C 3 , Cr 3 Si, and Cr 5 Si 3 C x experimentally and by thermodynamic predictions. For the DCMS coating, however, changes in residual stress and microstructure at the elevated temperatures were limited by the inherent porosity and inhomogeneous structure of the as-deposited coating. At 1200 °C, both coating types interacted rapidly with the underlying SiC substrate in the early stages of the experiment. The results from this study suggest that the characteristics of the Cr coatings do not significantly change at the reactor operating temperature of 300 °C, while changes in microstructure and stress state are expected in off-normal conditions of 700 °C and 1200 °C. Finally the results from this study suggest the B-HiPIMS coating is best-suited as a protective coating for SiC fuel cladding.

36 MATERIALS SCIENCE↗

Comprehensive new insights on the potential use of SiC as plasma-facing materials in future fusion reactors

Abstract The performance of silicon carbide as an alternative plasma facing material (PFM) was studied at various irradiation conditions relevant to ion energies and fluxes of a fusion reactor. This analysis involves detailed modeling of subsurface plasma/material interactions, sputtered particle transport above the surface and redeposition, and related changes in material composition and microstructure induced by steady-state and Edge Localized Mode ion fluxes. Transition of a crystalline SiC surface to semi-crystalline and amorphous phases was analyzed based on advanced modeling of DIII-D tokamak experiments where SiC was irradiated in single- and multiple- L-mode and H-mode discharges. This analysis shows that displacement damage, particle deposition/redeposition, and D accumulation on the SiC divertor surface can lead to significant microstructural changes that result in enhanced sputtering erosion in comparison with the original crystalline material. However, the resulting total net erosion rate for a full-coverage, advanced tokamak, SiC coated divertor may well be acceptably low. Moreover, the C sputtering yield from the evolved SiC surface can be seven times lower than from a pure graphite surface; this would imply significantly reduced tritium co-deposition rates in a D-T tokamak reactor, compared with a pure carbon surface. It was also determined that chemical sputtering of both C and Si should not result in any noticeable effect on the net erosion, for attached plasma regimes. Our results thus show encouraging results overall for use of SiC as a PFM in tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Evaluation of Thermal & Mechanical Properties of Additively Manufactured Monolithic SiC for Solar Receiver Applications

Increasing the operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal (CST) and solar power (CSP) systems. Owing to its high temperature stability combined with excellent thermal and optical properties, SiC has been the material of choice for application in high-temperature solar receivers. State-of-the-art SiC volumetric concentrating solar air receivers such as the honeycomb design have successfully demonstrated in field exit air temperatures approaching 800oC. However, a successful application of CST systems for the decarbonization of heat reliant industrial sectors requires significant increases in the temperature capability of SiC receiver technology. Supported by an award from the Solar Technology Office (SETO), US Department of Energy (DOE), GE Research in collaboration with Heliogen Holdings Inc, is engaged in the development of an ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. The program objective is to design and demonstrate a techno-economically viable SiC air receiver technology that can achieve exit air temperatures up to 1100oC for CST applications. We report and discuss the results of our testing and evaluation of thermal and mechanical properties of reaction-bonded SiC fabricated via binder jet printing to support the receiver component design, development, and analyses.

14 SOLAR ENERGY↗

Performance Evaluation of an Additively Manufactured ultra-High Operating Temperature SiC Solar-Thermal Air Receiver (HOTSSTAR) Test Module

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal and solar power systems. GE Aerospace Research in collaboration with Heliogen Inc and Sandia National Laboratories (SNL) is engaged in the development of ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. HOTSSTAR goal is to demonstrate SiC receiver with air exit temperatures up to 1100oC. We discuss fabrication and on-sun test results of a prototype 50kWth test module. The receiver architecture is based on a radial airflow design and consists of a series of radial SiC receiver sectors organized around central absorber. These components were fabricated using binder-jet printed SiC followed by melt-infiltration reaction bonding process. To enhance the thermo-mechanical reliability of SiC test articles in thermal gradient/ shock environment of the application, the components were laminated with GE’s MI SiC CMC. A dedicated test facility was constructed at SNL Solar Tower to evaluate the operational performance of HOTSSTAR module under solar fluxes >200 W/cm2. We report on our final 50kW test module fabrication, integration at the test facility at Sandia, and discuss on-sun test results. We compare the performance of HOTSSTAR module relative to our model predictions.

14 SOLAR ENERGY↗

Microwave assisted heating of plastic waste: Effect of plastic/susceptor (SiC) contacting patterns

We discuss plastic accumulation as a growing sustainability challenge. Most plastics are thermally inert at room temperature, requiring high temperatures for depolymerization. In the quest for developing sustainable plastic upcycling, we investigate silicon carbide (SiC) as microwave absorbing susceptors for reaching depolymerization temperatures. We utilize three SiC topologies – particles, hot-pressed plastic films containing SiC particles, and monoliths. SiC particles of >0.5 mm in diameter can provide heating rates approaching ~200 °C/min at modest powers. Still, physically mixed plastic-susceptor beds suffer from density differences, causing non-uniform contact during plastic softening and melting. Hot-pressed plastic films containing SiC particles allow uniform plastic-susceptor contact but suffer from slow heating as only a single layer of susceptors exists between polymer layers. SiC monoliths mitigate these challenges by preferentially dissipating the microwaves and rapidly heating the plastics independently of polymeric properties.

36 MATERIALS SCIENCE↗

Emerging continuous SiC fibers for high-temperature applications

Silicon carbide (SiC) fibers are responsible for the ultimate strength and toughness of SiC-fiber reinforced composites in harsh environments. The development of a new generation of continuous SiC fibers continues to advance the mechanical properties of composite materials. Tyranno™ SA4 fiber was recently released as a successor of Tyranno™ SA3 fiber. Laser-driven chemical vapor deposition (LCVD) has been adopted as an alternative fiber processing route to synthesizing high-strength SiC fiber with tailorable small diameters and chemical compositions. Both Tyranno™ SA4 and laser-driven CVD fibers show very high tensile strength, about 4 GPa in the as-fabricated condition. The degradation of thermal stability and strength due to annealing in an inert environment were similar for Tyranno™ SA3 and SA4 fibers because of their similar carbon-rich, crystalline microstructure. Silicon-rich fibers produced by LCVD possessed heterogeneous crystallinity, which was attributed to laser power distribution and showed microstructural instability at 1500 °C and above. Finally, the new SiC fibers demonstrated an increase in as-fabricated strength but faced the same challenges in environmental resistance as the traditional SiC fibers do.

36 MATERIALS SCIENCE↗

SiC as a core-edge integrated wall solution in DIII-D

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Z eff , across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Z eff , potentially by as much as ~50%. It is discussed how SiC may be expected to "self-condition" and create wall conditions similar to siliconization, further lowering Z eff due to efficient oxygen gettering. Furthermore, the potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Wide bandgap photoconductor (SiC:V)-based optically addressed light valve for high fluence operation

Optically addressable light valves based on wide bandgap 4H- and 6H-SiC as photoconductors were designed to withstand higher operational laser fluences than the state of-the-art bismuth silicon oxide (BSO; Bi 12 SiO 20 ) based devices. Vanadium-doped SiC was selected as the photoconductors due to their reasonable photoresponsivity while many fold improvement in laser induced damage threshold as compared to BSO. The laser induced damage threshold values of the materials were measured after exposing ~ 200 sites on the samples to increasing levels of fluence of a gaussian pulsed Nd: YAG laser system (1064 nm) with a 5 Hz repetition rate. The measured damage threshold values for BSO, 4H- and 6H-SiC were 0.4 J/cm 2 , 1.75 J/cm 2 and 1.8 J/cm 2 , respectively. Photoconductive switches based on 4H and 6H-SiC samples were characterized at wavelengths of 380 nm, 405 nm, and 447 nm. The peak photoresponsivity values of the 4H- and 6H-SiC materials were measured to be under 380 nm and 405 nm, respectively. The photoconductor was bonded to a BK7 optical window with 5 μm diameter microspheres as spacers. A twisted nematic type E7 liquid crystal (LC) was filled in the 5 μm gap in a vacuum chamber. The desired alignment of the liquid crystal was achieved by mutually orthogonal orientation of LC alignment layers on the two mating faces (SiC and BK7). The fabricated devices were modulated using address beams of wavelengths 380 nm, 405 nm, and 447 nm. In conclusion, required transmission levels of > 90% was achieved for the fabricated OALVs for a sinusoidal voltage waveform that meets the lifetime requirement of the device.

36 MATERIALS SCIENCE↗

Benefits of high-voltage SiC-based power electronics in medium-voltage power-distribution grids

Medium-voltage (MV) power electronics equipment has been increasingly applied in distribution grids, and high-voltage (HV) silicon carbide (SiC) power semiconductors have attracted considerable attention in recent years. This paper first overviews the development and status of HV SiC power semiconductors. Then, MV power-converter applications in distribution grids are summarized and the benefits of HV SiC in these applications are presented. Microgrids, including conventional and asynchronous microgrids, that can fully demonstrate the benefits of HV SiC power semiconductors are selected to investigate the benefits of HV SiC in detail, including converter-level benefits and system-level benefits. Finally, an asynchronous microgrid power-conditioning system (PCS) prototype using a 10 kV SiC MOSFET is presented.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Neudeck, Philip G.↗