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At least 145 records · Page 8

Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.

random access memory↗

Test report for single event effects of the 80386DX microprocessor

The Jet Propulsion Laboratory Section 514 Single Event Effects (SEE) Testing and Analysis Group has performed a series of SEE tests of certain strategic registers of Intel's 80386DX CHMOS 4 microprocessor. Following a summary of the test techniques and hardware used to gather the data, we present the SEE heavy ion and proton test results. We also describe the registers tested, along with a system impact analysis should these registers experience a single event upset.

Watson, R. Kevin↗

Ionizing Radiation Environment on the International Space Station: Performance vs. Expectations for Avionics and Material

The role of structural shielding mass in the design, verification, and in-flight performance of International Space Station (ISS), in both the natural and induced orbital ionizing radiation (IR) environments, is reported. Detailed consideration of the effects of both the natural and induced ionizing radiation environment during ISS design, development, and flight operations has produced a safe, efficient manned space platform that is largely immune to deleterious effects of the LEO ionizing radiation environment. The assumption of a small shielding mass for purposes of design and verification has been shown to be a valid worst-case approximation approach to design for reliability, though predicted dependences of single event effect (SEE) effects on latitude, longitude, SEP events, and spacecraft structural shielding mass are not observed. The Figure of Merit (FOM) method over predicts the rate for median shielding masses of about 10g/cm(exp 2) by only a factor of 3, while the Scott Effective Flux Approach (SEFA) method overestimated by about one order of magnitude as expected. The Integral Rectangular Parallelepiped (IRPP), SEFA, and FOM methods for estimating on-orbit (Single Event Upsets) SEU rates all utilize some version of the CREME-96 treatment of energetic particle interaction with structural shielding, which has been shown to underestimate the production of secondary particles in heavily shielded manned spacecraft. The need for more work directed to development of a practical understanding of secondary particle production in massive structural shielding for SEE design and verification is indicated. In contrast, total dose estimates using CAD based shielding mass distributions functions and the Shieldose Code provided a reasonable accurate estimate of accumulated dose in Grays internal to the ISS pressurized elements, albeit as a result of using worst-on-worst case assumptions (500 km altitude x 2) that compensate for ignoring both GCR and secondary particle production in massive structural shielding.

Koontz, Steven L.↗

EdgeCortix SAKURA-I Machine-Learning, PCIe Accelerator SEE Heavy Ion Test Report

To enable autonomy in space, machine-learning and computer vision applications become invaluable for sensor processing. However, these algorithms are computationally complex and unfeasible for many embedded central processing units (CPUs) and usually require external coprocessors, such as graphics processing units (GPUs) or accelerators specific to the application, including application specific integrated circuits (ASICs). In power-constrained systems, GPUs tend to consume more power than is acceptable (>40W), so lower-power accelerators have shown promise to provide the performance needed under spacecraft constraints. For radiation engineers, developing methodologies that can properly test CPUs, GPUs, and accelerators, and enable comparisons between them remains a necessary complication to solve as the devices become more complex. The methodology in this test aims to be a start in developing a baseline single-event effect (SEE) test for client-device machine learning accelerators. This category of devices do not host their own operating system. This testing campaign is a continuation of a previous 200 MeV proton test performed in January 2024. This report covers two heavy ion tests of the SAKURA-I card: one in April 2024, and one in June 2024. Additional data was needed after the April test due to ion-range issues experienced at higher linear-energy transfers (LETs). These range issues are described in more detail in Section 8. This experiment characterizes SEEs and data error susceptibility of the EdgeCortix SAKURA-I machine-learning accelerator under heavy ions. The device was monitored for single event upsets (SEUs) and single event functional interrupts (SEFIs) at the Lawrence Berkeley National Laboratory’s 88-inch cyclotron. The SAKURA-I board accelerates machine-learning inference applications on a host computer through a PCIex16 connection. For the purposes of devising an end to end automated analysis workflow for this experiment, the YOLO-V5 and SSD300 objection-detection models, and the ResNet-50, EfficientNet, and MobileNetV2 image classification models were used as a representative suite of analytical machine-learning models.

Seth S Roffe↗

The Radiation Environment for the LISA/Laser Interferometry Space Antenna

The purpose of this document is to define the radiation environment for the evaluation of degradation due to total ionizing and non-ionizing dose and of single event effects (SEES) for the Laser Interferometry Space Antenna (LISA) instruments and spacecraft. The analysis took into account the radiation exposure for the nominal five-year mission at 20 degrees behind Earth's orbit of the sun, at 1 AU (astronomical unit) and assumes a launch date in 2014. The transfer trajectory out to final orbit has not yet been defined, therefore, this evaluation does not include the impact of passing through the Van Allen belts. Generally, transfer trajectories do not contribute significantly to degradation effects; however, single event effects and deep dielectric charging effects must be taken into consideration especially if critical maneuvers are planned during the van Allen belt passes.

Barth, Janet L.↗

Proton Effects and Test Issues for Satellite Designers: Ionization Effects - Section 4

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies. A crude, but nevertheless telling, indication of the level of concern for proton effects follows from surveying the themes treated in papers presented at this conference. The table lists themes found in the IEEE Transaction on Nuclear Science (TNS) December issue from the past year and compares them with the December issue's content a decade earlier. Ten years ago there were nine papers, or about 10% of the total, dealing with the four indicated topics. At that time, single event effects from protons were the primary concern, and these were thought to be possible only when a nuclear reaction initiated energetic recoil atoms. This is shown in the table as the 'traditional" SEE subject. A decade later, submissions addressing this topic had doubled, while papers devoted to displacement damage studies had increased from one to nine! More importantly, displacement damage effects in the natural space environments have become a concern for degradation in modern devices (other than solar cells), and this was not so ten years earlier.

Marshall, Paul W.↗

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.

Mcpherson, Joseph A.↗

Virtex-II Pro PowerPC SEE Characterization Test Methods and Results

The Xilinx Vix-11 Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However,these devices will be susceptible to single event effects (SEE), which must be mitigated. Observations from prior testing of the Xilinx Virtex-II Pro suggest that the PowerPC core has significant vulnerability to SEES. However, these initial tests were not designed to exclusively target the functionality of the PowerPC, therefore making it difficult to distinguish processor upsets from fabric upsets. The main focus of this paper involves detailed SEE testing of the embedded PowerPC core. Due to the complexity of the PowerPC, various custom test applications, both static and dynamic, will be designed to isolate each Unit of the processor. Collective analysis of the test results will provide insight into the exact upset mechanism of the PowerPC. With this information, mitigations schemes can be developed and tested that address the specific susceptibilities of these devices. The test bed will be the Xilinx SEE Consortium Virtex-II Pro test board, which allows for configuration scrubbing, design triplication, and ease of data collection. Testing will be performed at the Indiana University Cyclotron Facility using protons of varying energy levels and fluencies. This paper will present the detailed test approach along with the results.

Petrick, David↗

Virtex-4VQ dynamic and mitigated single event upset characterization summary

This report is the result of funding by the NASA Electronic Parts and Packaging Program (NEPP) and the combined efforts of members within the Xilinx Radiation Test Consortium (XRTC), sometimes known as the Xilinx Single Event Effects (SEE) Test Consortium. The XRTC is a voluntary association of aerospace entities, including leading aerospace companies, universitie and national laboratories, combining resources to characterize reconfigurable, field programmable gate arrays (FPGAs) for aerospace applications. Previous publications of Virtex-4 radiation results are for commercial (non-epitaxial) devices; see, for example, Refs. 1–5. A notable exception is Ref. 6, which presents XRTC upset measurements of storage elements in the PowerPC405s in the XQR4VFX60. This work represents a continuation of the efforts reported in the “Virtex-4QV Static SEU Characterization Summary” [7]. The contents of this report describe various Single Event Functional Interrupt (SEFI) and Single Event Upset (SEU) modes seen while dynamically exercising the clocked resources within Virtex-4 devices and the corresponding mitigation techniques related to the aforementioned observed SEFI modes.

Allen, Gregory↗

Soft error-mitigating semiconductor design system and associated methods

A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.

Miryala, Sandeep↗

Soft error-mitigating semiconductor design system and associated methods

A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.

Miryala, Sandeep↗

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗

Updated Electronic Testbed System

As we continue to advance in exploring space frontiers, technology must also advance. The need for faster data recovery and data processing is crucial. In this, the less equipment used, and lighter that equipment is, the better. Because integrated circuits become more sensitive in high altitude, experimental verification and quantification is required. The Center for Applied Radiation Research (CARR) at Prairie View A&M University was awarded a grant by NASA to participate in the NASA ER-2 Flight Program, the APEX balloon flight program, and the Student Launch Program. These programs are to test anomalous errors in integrated circuits due to single event effects (SEE). CARR had already begun experiments characterizing the SEE behavior of high speed and high density SRAM's. The research center built a error testing system using a PC-104 computer unit, an Iomega Zip drive for storage, a test board with the components under test, and a latchup detection and reset unit. A test program was written to continuously monitor a stored data pattern in the SRAM chip and record errors. The devices under test were eight 4Mbit memory chips totaling 4Mbytes of memory. CARR was successful at obtaining data using the Electronic TestBed System (EBS) in various NASA ER-2 test flights. These series of high altitude flights of up to 70,000 feet, were effective at yielding the conditions which single event effects usually occur. However, the data received from the series of flights indicated one error per twenty-four hours. Because flight test time is very expensive, the initial design proved not to be cost effective. The need for orders of magnitude with more memory became essential. Therefore, a project which could test more memory within a given time was created. The goal of this project was not only to test more memory within a given time, but also to have a system with a faster processing speed, and which used less peripherals. This paper will describe procedures used to build an updated Electronic Testbed System.

Brewer, Kevin L.↗

Reconfigurable Framework for Resilient Semantic Segmentation for Space Applications

Deep learning (DL) presents new opportunities for enabling spacecraft autonomy, onboard analysis, and intelligent applications for space missions. However, DL applications are computationally intensive and often infeasible to deploy on radiation-hardened (rad-hard) processors, which traditionally harness a fraction of the computational capability of their commercial-off-the-shelf counterparts. Commercial FPGAs and system-on-chips present numerous architectural advantages and provide the computation capabilities to enable onboard DL applications; however, these devices are highly susceptible to radiation-induced single-event effects (SEEs) that can degrade the dependability of DL applications. In this article, we propose Reconfigurable ConvNet (RECON), a reconfigurable acceleration framework for dependable, high-performance semantic segmentation for space applications. In RECON, we propose both selective and adaptive approaches to enable efficient SEE mitigation. In our selective approach, control-flow parts are selectively protected by triple-modular redundancy to minimize SEE-induced hangs, and in our adaptive approach, partial reconfiguration is used to adapt the mitigation of dataflow parts in response to a dynamic radiation environment. Combined, both approaches enable RECON to maximize system performability subject to mission availability constraints. We perform fault injection and neutron irradiation to observe the susceptibility of RECON and use dependability modeling to evaluate RECON in various orbital case studies to demonstrate a 1.5–3.0× performability improvement in both performance and energy efficiency compared to static approaches.

97 MATHEMATICS AND COMPUTING↗

SEE Test Report for Texas Instruments LMV7219 7 ns, 2.7 V to 5 V Comparator with Rail-to-Rail Output

The primary purpose of this testing is to characterize the Texas Instruments LMV7219 comparator for single-event latchup (SEL) susceptibility. These data will be used to assess the Single-Event Latchup (SEL) risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the comparator to single-event transients (SET) and other nondestructive Single-Event Effects (SEE).

Raymond Ladbury↗