Search NASA⌕ Search

SEARCH · Search NASA

Results for “Substitutional Doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Hole-doped room-temperature superconductivity in H 3 S 1-x Z (Z=C, Si)

We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H 3 S with the Im3¯m structure at megabar pressures. The hole doping can fine-tune the Fermi energy to reach the electronic density-of-states peak maximizing the electron-phonon coupling. This can boost the critical temperature from the original 203 K to 289 K and 283 K, respectively, for H 3 S 0.962 C 0.038 at 260 GPa and H 3 S 0.960 Si 0.040 at 230 GPa. The former may provide an explanation for the recent experimental observation of room-temperature superconductivity in a highly compressed CeSeH system. Our work opens a new avenue for substantially raising the critical temperatures of hydrogen-rich materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

An insight on the effect of sodium and silicon on microstructure and crystallography of high alumina cements

In the present study the influence of minor elements (Na{sub 2}O and SiO{sub 2}) on the mineralogy, chemistry and microstructure of High Alumina Cements (HACs) has been investigated. HACs have several advantages respected to Ordinary Portland Cement (OPC) but the shortage of Al-rich raw materials represents a limiting factor: re-use of Al-rich waste as raw material represents a solution but it will add minor elements to the raw meal that could change HACs properties. For the first time, four commercial HACs, doped with sodium and silicon, and one synthetic HAC, only highly doped in sodium, were studied through a multidisciplinary approach by combining conventional and unconventional analytical techniques. Results highlighted that (i) sodium and silicon were mainly incorporated in a sodium-rich phase (Na-phase, NCA{sub 2}, Na{sub 1.9}CaAl{sub 3.9}Si{sub 0.1}O{sub 8}), (ii) no minor phases such as gehlenite and/or mayenite occurred, and (iii) CA (CaAl{sub 2}O{sub 4}) and CA{sub 2} (CaAl{sub 4}O{sub 7}) revealed a limited ionic substitution.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Chemical bond and phase stability of Ga-doped Sm2Fe17Cx magnet

Sm2Fe17C3 phase (2:17) is metastable and exhibits excellent intrinsic hard magnetic properties. Doping elements such as Ga facilitate the formation of a single-phase 2:17 structure in arc-melted Sm2Fe17Cx alloys, which opens a promising route for fabricating fully dense bulk Sm2Fe17Cx magnets via high-temperature techniques such as melting and sintering. First-principles electronic structure calculation indicates that Ga prefers to partially replace Fe at the 9d and 18h crystallographic sites in Sm2Fe17C3 and Sm2Fe17, respectively. This difference in site preference is attributed to the distinct chemical environments surrounding the Fe atoms in the two compounds. Ga substitution favors the Sm–Ga bonding formation while avoiding Ga–C interactions. Doped Ga atoms result in more negative formation energy in Sm2(Fe, Ga)17C3, indicating improved structural stability. Crystal Orbital Hamilton Population analysis reveals that carbon insertion weakens the bonding of Sm-Fe (18h) and Sm-Fe (18f) in Sm2Fe17C3. Ga doping facilitates electron redistribution across chemical bonds, thereby reinforcing Fe(18h)–Sm and Fe(18f)–Sm interactions and stabilizing the carbon-centered octahedral local structure. This synergistic effect contributes significantly to the observed enhancement in phase stability of Sm2(Fe, Ga)17Cx. These findings suggest that chemical bond engineering through the selective doping of Ga can enhance phase stability and facilitate the synthesis of Sm2Fe17C3, providing a viable strategy for developing advanced magnets.

Liu, Xubo [Critical Materials Innovation Hub, Divi↗
DOE OSTI2024

Effect of Ni substitution on the fragile magnetic system La 5 Co 2 Ge 3

La 5⁢ Co 2 ⁢Ge 3 is an itinerant ferromagnet with a Curie temperature T C of ~3.8K and a remarkably small saturated moment of 0.1µ B /Co. Here we present the growth and characterization of single crystals of the La 5 ⁢(Co 1–x⁢ Ni x ) 2 Ge 3 series for 0.00 ≤ x ≤ 0.186. Here we measured powder x-ray diffraction, composition as well as anisotropic temperature-dependent resistivity, temperature and field-dependent magnetization along with heat capacity on these single crystals. We also measured muon-spin rotation/relaxation (μ⁢SR) for some Ni substitutions (x = 0.027,0.036,0.074) to study the evolution of internal field with Ni substitution. Using the measured data we infer a low temperature, transition temperature-composition phase diagram for La 5 ⁢(Co 1–x ⁢Ni x ) 2 Ge 3 . We find that T C is suppressed for low dopings, x ≤ 0.014; whereas for 0.036 ≤ x ≤ 0.186, the samples are antiferromagnetic with a Néel temperature T N that goes through a weak and shallow maximum (T N ~ 3.4K for x~0.07) and then gradually decreases to 2.4 K by x = 0.186. For intermediate Ni substitutions, 0.016 ≤ x ≤ 0.027, two transition temperatures are inferred with T N >T C . Whereas the T–x phase diagram for La 5 ⁢(Co 1–x ⁢Ni x ) 2 Ge 3 and the T–p phase diagram determined for the parent La 5 ⁢Co 2 ⁢Ge 3 under hydrostatic pressure are grossly similar, changing from a low-doping or low-pressure ferromagnetic (FM) ground state to a high-doped or high-pressure antiferromagnetic (AFM) state, perturbation by Ni substitution enabled us to identify an intermediate doping regime where both FM and AFM transitions occur.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Solvent-free synthesis of Co single atom and nanocluster decorated N-doped carbon for efficient oxygen reduction

The advancement of efficient, cheap, and durable catalysts for oxygen reduction reaction (ORR) to substitute Pt/C in metal-air batteries is of paramount importance. However, traditional solvent-based methods fall short in terms of environmental benign and scalability. Herein, a solvent-free organic-inorganic self-assembly approach is explored to construct cobalt single atom and cobalt nanocluster decorated nitrogen-doped porous carbon spheres (Co-SA/NC@NCS). The solvent-free synthesis demonstrates an impressively high yield (282 g/L) and the resultant Co-SA/NC@NCS possesses a high N content (6.9 wt%). Density functional theory calculations disclose that the Co-SAs and Co-NCs are able to optimize the surface oxygen adsorption capability and enhance the conductivity of the NCS, thereby facilitating the ORR performance. Here, the solvent-free synthesis is also feasible for the synthesis of other non-noble metal element (Fe, Ni, and Zn) decorated nitrogen-doped porous carbon spheres.

Nitrogen-doped carbon↗
DOE OSTI2025

Testing of Novel Semiconductor Opening Switches Using Magnetic Switching

The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA ⋅ cm -2 , the testbed produces 10 kV output pulses into a 56 Ω load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. Finally, these profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.

drift step recovery diodes↗
DOE OSTI2024

Thermal conductivity suppression in uranium-doped thorium dioxide due to phonon-spin interactions

In this work, impact of low level of uranium (U) atom substitution on thermal conductivity of thorium dioxide (ThO 2 ) is investigated. ThO 2 is an electronic insulator with a wide optical band-gap and no unpaired electrons whose thermal transport is governed by phonons. U-substitution introduces unpaired f-electrons resulting in paramagnetic behavior of U-ThO 2 at room temperature, which significantly suppresses its thermal conductivity. A single crystal of U-ThO 2 with graded composition of U is grown using a hydrothermal synthesis method, and thermal conductivity measurements are performed in regions with uniform composition of U at levels of 0%, 6%, 9% and 16%. Measured thermal conductivity profiles over 77–300 K temperature range are analyzed using an analytical expression for phonon-mediated thermal transport based on Klemens-Callaway model. Temperature dependent thermal conductivity is found to deviate significantly from the Rayleigh scattering trend expected for a simple substitutional point defect with a small perturbation to mass and interatomic forces. With the resonant scattering term, observed large suppression of thermal conductivity at low temperatures can be closely reproduced. Additionally, the extracted phonon-spin coupling constants imply a nonlinear relation of phonon-spin interaction intensity with respect to U doping percentage. Our study reveals how phonon-spin scattering contributed by unpaired f-electrons in U atoms influences thermal transport in the U-ThO 2 system.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Final Technical Report for DE-FG02-86ER45268

This work addresses several key issues for understanding the unusual superconductivity in IBS, already shown to be technologically useful materials. 1a). Are reactive gasses like fluorine, chlorine, or water vapor behaving simply as electron donors to cause the superconductivity (at T conset =21 K) in undoped IBS like BaFe 2 As 2 ? 1b). Does exposure to fluorine increase T c in electron-doped IBS materials that are underdoped, e. g. Ba(Fe 0.96 Co 0.04 ) 2 As 2 ? 1c). Can fluorine as a reactive electron-donor, with its relatively greater ease of introduction into the lattice, be used as a rapid tool to search for superconductivity in new materials under investigation? Method of investigation: Using electron probe microanalysis, x-ray photoemission spectroscopy, and dynamical mean field theory calculations, we found that fluorine substitutes for As in the BaFe 2 As 2 lattice, and should therefore behave as an electron donor. We will F-dope Ba(Fe 0.96 Co 0.04 ) 2 As 2 and several new compounds under investigation for superconductivity upon doping to determine fluorine’s effect. Potential impact: If – like for fluorine - a brief exposure to hydrogen indeed causes superconductivity to a depth of 10 microns, this technique could be useful in creating long lengths of superconducting tape without the chemical aggressiveness of fluorine. Using the F ion, which substitutes for As - away from the Fe planes, in underdoped IBS like Ba(Fe 0.96 Co 0.04 ) 2 As 2 may form optimally doped IBS with less impurity scattering of the superconducting Fe 3d electrons resulting in improved superconducting properties. Another potential impact is the speed of checking for superconductivity in new materials under investigation for superconductivity upon doping. 2. What are the effects of Be substitution into IBS, beginning with FeSe and its derivatives (FeSe 1-x S x and FeSe 1-x Te x ) and BaFe 2-x Co x As 2 ? Method of investigation: We recently succeeded in adding Be to the FeSe lattice and found, surprisingly, a factor of four improvement of the low temperature residual resistivity ratio, consistent with improved electronic ordering. Using single crystal x-ray diffraction and x-ray dispersive spectroscopy, determine the concentration and location of the Be dopant. Using resistivity, determine if there is improvement in the residual resistivity achieved by Be doping in the FeSe derivatives (using AlCl 3 :KCl flux growth) and Co-doped BaFe 2 As 2 (using self-flux single crystal growth). Measuring resistivity under strain, determine the changes of the nematic susceptibility at the structural ordering transition causes by the increase in electronic order caused by Be doping in FeSe. Potential impact: Further understanding of IBS, including FeSe which - under physical pressure - has a T c increase to 40 K and -prepared as a monolayer - has a T c reported to be over 100 K. 3. In collaboration, prepare light atom compounds involving Be and look for high pressure-induced superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Surface and Bulk Oxygen Kinetics of BaCo 0.4 Fe 0.4 Zr 0.2-X Y X O 3-δ Triple Conducting Electrode Materials

Triple ionic-electronic conductors have received much attention as electrode materials. In this work, the bulk characteristics of oxygen diffusion and surface exchange were determined for the triple-conducting BaCo 0.4 Fe 0.4 Zr 0.2-X Y X O 3-δ suite of samples. Y substitution increased the overall size of the lattice due to dopant ionic radius and the concomitant formation of oxygen vacancies. Oxygen permeation measurements exhibited a three-fold decrease in oxygen permeation flux with increasing Y substitution. The DC total conductivity exhibited a similar decrease with increasing Y substitution. These relatively small changes are coupled with an order of magnitude increase in surface exchange rates from Zr-doped to Y-doped samples as observed by conductivity relaxation experiments. The results indicate that Y-doping inhibits bulk O 2- conduction while improving the oxygen reduction surface reaction, suggesting better electrode performance for proton-conducting systems with greater Y substitution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Pressure‐Dependent “Insulator–Metal–Insulator” Behavior in Sr‐Doped La 3 Ni 2 O 7

Abstract Recently, superconductivity at high temperatures is observed in bulk La 3 Ni 2 O 7−δ under high pressure. However, the attainment of high‐purity La 3 Ni 2 O 7−δ single crystals remains a formidable challenge. Here, the crystal structure and physical properties of single crystals of Sr‐doped La 3 Ni 2 O 7 synthesized at high pressure (20 GPa) and high temperature (1400 °C) are reported. Through single crystal X‐ray diffraction, it is shown that high‐pressure‐synthesized paramagnetic Sr‐doped La 3 Ni 2 O 7 crystallizes in an orthorhombic structure with Ni─O─Ni bond angles of 173.4(2)° out‐of‐plane and 175.0(2)°and 176.7(2)°in plane. The substitution of Sr alters in band filling and the ratio of Ni 2+ /Ni 3+ in Sr‐doped La 3 Ni 2 O 7 , aligning them with those of “La 3 Ni 2 O 7.05” , thereby leading to significant modifications in properties under high pressure relative to the unsubstituted parent phase. At ambient pressure, Sr‐doped La 3 Ni 2 O 7 exhibits insulating properties, and the conductivity increases as pressure goes up to 10 GPa. However, upon further increasing pressure beyond 10.7 GPa, Sr‐doped La 3 Ni 2 O 7 transits back from a metal‐like behavior to an insulator. The insulator–metal–insulator trend under high pressure dramatically differs from the behavior of the parent compound La 3 Ni 2 O 7−δ , despite their similar behavior in the low‐pressure regime. These experimental results underscore the considerable challenge in achieving superconductivity in nickelates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Capacitive deionization using carbon derived from an array of zeolitic-imidazolate frameworks

Capacitive deionization (CDI) represents one of the most thermodynamically efficient technologies for brackish water desalination. Its performance is highly reliant on the surface properties of carbon-based electrodes. Zeolitic-imidazolate framework (ZIF)-derived carbon materials have emerged among the most promising candidates owing to their high structural and compositional tuneability. However, the impacts of the precursory ZIF structure on the properties of the final carbon, and therefore, CDI capacity and efficiency remain to be further explored. In this work, four Zn-based ZIFs with different side-chain substitutions on the imidazolates were synthesized on a gram scale with high yields to produce N-doped carbons by pyrolysis. Next, the resulting carbons along with four commercial carbon blacks were characterized physically and electrochemically to explore the structure-performance relationship. We demonstrated that the imidazole side-chain substitution alters the ZIF's decomposition during pyrolysis, influencing the elemental compositions, surface properties, wettability and graphitization levels. The diverse carbon properties result in variable double layer capacitance and charge-transfer resistance, ultimately impacting the CDI performance. Among these carbons, Zn (4abIm)2-C afforded the greatest salt adsorption capacity of 14.19 mg NaCl $·g_C^{–1}$, while Zn (mIm) 2 -C showed the highest overall salt adsorption capacity and rate; both exceeded the performance of the commercial carbon blacks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Magnetic cations doped into a double perovskite semiconductor

Here we report two solid solutions based on the magnetic ion doping of the double perovskite oxide Sr 2 GaSbO 6 : Sr 2 Ga 1-x Cr x SbO 6 (0.1 ≤ x ≤ 0.4) and Sr 2 Ga 1-x Fe x SbO 6 (0.1 ≤ x ≤ 0.4). All compositions crystallize in the same space group ($I4/m$) as their undoped parent phase Sr 2 GaSbO 6 , with the trivalent magnetic cations Cr 3+ or Fe 3+ partially substituting for non-magnetic Ga 3+ in one of the B-cation sites. The Cr- and Fe-doped phases display dominant antiferromagnetic coupling among the dopant magnetic moments, and exhibit decreasing band gaps with increasing substitution level.

antiferromagnetic coupling↗
DOE OSTI2020

Anion and cation co-doping of Na 4 SnS 4 as sodium superionic conductors

Na based all-solid-state batteries are one of the most promising candidates for large-scale electrochemical energy storage owing to their low cost and outstanding safety properties. The key enabler of this technology is solid electrolyte with sufficiently high ionic conductivity at room temperature. In this work, the design, synthesis, characterization and testing of a series of novel fast Na-ion conductors, Na 4-x-y Sn 1-x A x S 4-y X y with aliovalent cation (P 5+ /Sb 5+ ) and anion substitutions (Cl - /Br - ) of the parent compound Na 4 SnS 4 are reported. The doped samples crystalize in a new phase with space group I4 1 /acd and show ionic conductivities that are one to four orders of magnitude higher than that of undoped Na 4 SnS 4 . R. t. conductivity of 0.64 mS cm -1 is achieved in Na 3.7 Sn 0.8 Sb 0.2 S 3.9 Cl 0.1 with a low activation energy of 0.26 eV. Furthermore, Rietveld refinement against high resolution synchrotron X-ray powder diffraction data reveals that the distribution of the doping ions and the resulted Na vacancies are underlying cause of the enhanced conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Investigation of the competition between Tl + and Ce 3+ scintillation in Tl2LiYCl6:Ce, an elpasolite scintillator

Li-containing elpasolite scintillators are currently investigated for their ability to detect both thermal neutrons and gamma photons with a single inorganic crystal. The scintillation is typically triggered by using an activator such as Ce. However, when Tl, also a luminescent ion, is present in the matrix, competition between the two centers Tl and Ce can occur. In this study, we are using Ce doped Tl 2 LiYCl 6 to investigate this competition. To this end, the Ce (which substitutes Y) concentration is varied from 0 to 1 in the Tl 2 LiY 1-x CexCl 6 composition. In the low concentration range in which Ce remains a dopant, the photo- and radioluminescence spectra show that the scintillation of Tl 2 LiYCl 6 :Ce is mostly dominated by recombination on intrinsic luminescent centers. For cerium concentrations higher than x = 0.02, very different emissions can be easily distinguished from the photo- and radioluminescence of undoped and low Ce doped Tl 2 LiYCl 6 crystals. These emissions are attributed to the formation of a second phase Tl 2 CeCl 5 , identified by X-ray diffraction. We conclude that the intrinsic luminescence related to Tl dominates the scintillation in the range of concentration for which Ce does substitute on the Y-site.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Metallization and spin fluctuations in Cu-doped lead apatite

An electronic structure and magnetic properties analysis of the recently proposed Cu-doped lead apatite is performed. Here, we show that electronic structures of differently Cu-substituted structures are characterized by localized molecular Cu-O bands at or near the Fermi level. The Cu substitutions can happen at both Pb1 and Pb2 sites, leading to metallic and semiconducting systems differently. The electronic systems in these bands are highly unstable magnetically and form clusters of rigidly ferromagnetically coupled magnetic moments on Cu and neighboring oxygen atoms with a total moment of about 1µ B . The ground state of uniformly Cu-doped lead apatite appears to be magnetic and semiconducting. The nonuniform distribution of two Cu atoms at the nearest Pb2 sites leads to an antiferromagnetic semiconducting state with formation energy close to uniformly distributed Cu configurations. The inclusion of quantum spin fluctuations confirms the stability of magnetic Cu-O clusters. Our calculations revealed the absence of the long-range magnetic order between uniformly distributed Cu-O clusters, creating the spin glass type of system.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Bulk high-temperature superconductivity in pressurized tetragonal La 2 PrNi 2 O 7

The Ruddlesden–Popper (R–P) bilayer nickelate, La 3 Ni 2 O 7 , was recently found to show signatures of high-temperature superconductivity (HTSC) at pressures above 14 GPa . Subsequent investigations achieved zero resistance in single-crystalline and polycrystalline samples under hydrostatic pressure conditions. Yet, obviousdiamagnetic signals, the other hallmark of superconductors, are still lacking owing to the flamentary nature with low superconducting volume fraction. The presence of a new 1313 polymorph and competing R–P phases obscured proper identification of the phase for HTSC. Thus, achieving bulk HTSC and identifying the phase at play are the most prominent tasks. Here we address these issues in the praseodymium (Pr)-doped La 2 PrNi 2 O 7 polycrystalline samples. We find that substitutions of Pr for La efectively inhibit the intergrowth of diferent R–P phases, resulting in a nearly pure bilayer structure. For La 2 PrNi 2 O 7 , pressure-induced orthorhombic to tetragonalstructural transition takes place at P c ≈ 11 GPa, above which HTSC emerges gradually on further compression. The superconducting transition temperatures at 18–20 GPa reach $T$ $^{onset}_{c}$ = $82.5$ $K$ and $T$ $^{zero}_{c}$ = $60$ $K$, which are the highest values, to our knowledge, among known nickelate superconductors. Importantly, bulk HTSC was testified by detecting clear diamagnetic signals below about 75 K with appreciable superconducting shielding volume fractions at a pressure of above 15 GPa. Further, our results not only resolve the existing controversies but also provide directions for exploring bulk HTSC in the bilayer nickelates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗