Results for “Substrate effect” — Page 8

NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗

NASA NTRSDate not supplied

Dusty Environment Classification and Testing: Dust Mitigation Slide Cleaning Material Study

During the Apollo missions many mechanisms, equipment, and surfaces were contaminated by lunar dust and often negatively affected. The methods used to clear these devices of dust proved ineffective, which led to premature failure in some cases. Systems being designed for upcoming missions to the Moon will need to address the performance degradation risk of dust contamination. Surfaces at risk include thermal control surfaces, solar cells, camera and sensor optics, seals, metal joints and tools, and space suit assemblies. To improve state of the art dust mitigation approaches, the dust mitigation team at NASA Glenn Re-search Center (GRC) explored the effects imposed on substrates during cleaning activities in the presence of lunar dust. The Uniform Dust Deposition System (UDDS) was used to conduct a study of various cleaning techniques on different substrates. Test substrates and cleaning media were selected to represent a wide range of structural and functional materials. Substrates included orthofabric, thermal radiator coating, aluminum, quartz glass, silicone rubber, aluminized Mylar, and FEP. Cleaning materials included cloth wipes, tapes, a brush, and a pliable cleaner concept. Cleaning material / substrate pairs were rated on cleaning efficiency, substrate damage, cleaning material longevity, and ease of use. The best performing cleaning method varied based on application.

dust mitigation↗

NASA NTRS2022

Dusty Environment Classification and Testing: Dust Mitigation Slide Wipes & Tapes

During the Apollo missions many mechanisms, equipment, and surfaces were contaminated by lunar dust and often negatively affected. The methods used to clear these devices of dust proved ineffective, which led to premature failure in some cases. Systems being designed for upcoming missions to the Moon will need to address the performance degradation risk of dust contamination. Surfaces at risk include thermal control surfaces, solar cells, camera and sensor optics, seals, metal joints and tools, and space suit assemblies. To improve state of the art dust mitigation approaches, the dust mitigation team at NASA Glenn Research Center (GRC) explored the effects imposed on substrates during cleaning activities in the presence of lunar dust. The Uniform Dust Deposition System (UDDS) was used to conduct a study of various cleaning techniques on different substrates. Test substrates and cleaning media were selected to represent a wide range of structural and functional materials. Substrates included orthofabric, thermal radiator coating, aluminum, quartz glass, silicone rubber, aluminized Mylar, and FEP. Cleaning materials included cloth wipes, tapes, a brush, and a pliable cleaner concept. Cleaning material / substrate pairs were rated on cleaning efficiency, substrate damage, cleaning material longevity, and ease of use. The best performing cleaning method varied based on application.

lunar simulant↗

NASA NTRS1998

Thermal Modelling of Various Thermal Barrier Coatings in a High Flux Rocket Engine

A thermal model was developed to predict the thermal response of coated and uncoated tubes tested in a H2/O2 rocket engine. Temperatures were predicted for traditional APS ZrO2-Y2O3 thermal barrier coatings, as well as APS and LPPS ZrO2-Y2O3/NiCrAlY cermet coatings. Good agreement was observed between predicted and measured metal temperatures at locations near the tube surface or at the inner tube wall. The thermal model was also used to quantitatively examine the effect of various coating system parameters on the temperatures in the substrate and coating. Accordingly, the effect of the presence a metallic bond coat and the effect of radiation from the surface of the ceramic layer were examined. In addition, the effect of a variation in the values of the thermal conductivity of the ceramic layer was also investigated. It was shown that a variation in the thermal conductivity of the ceramic layer, on the order of that reported in the literature for plasma sprayed ZrO2-Y2O3 coatings, can result in temperature differences in the substrate greater than 100 C, a much greater effect than that due to the presence of a bond coat or radiation from the ceramic layer. The thermal model was also used to predict the thermal response of a coated rod in order to quantify the difference in the metal temperatures between the two substrate geometries in order to explain the previously-observed increased life of coatings on rods over that on tubes. It was shown that for the short duration testing in the rocket engine, the temperature in a tube could exceed that in a rod by more than 100 C. Lastly, a two-dimensional model was developed to evaluate the effect of tangential heat transfer around the tube and its impact on reducing the stagnation point temperature. It was also shown that tangential heat transfer does not significantly reduce the stagnation point temperature, thus allowing application of a simpler, one-dimensional model for comparing measured and predicted stagnation point temperatures.

Nesbitt, James A.↗

NASA NTRS2005

Effect of Scattering on the Heat Transfer Behavior of a Typical Semitransparent TBC Material on a Substrate

A parametric study was performed to examine the effects of isotropic scattering on the heat transfer in typical semitransparent thermal barrier coating on an opaque substrate. Some ceramic materials are semitransparent in the wavelength range where thermal radiation is important. Therefore, absorption, emission, and scattering of thermal radiation by the semitransparent layer and the emissivity of the substrate will affect the heat transfer and temperature in the layer. Scattering which depends on the structure of the semitransparent material can be used to increase the reflectivity of the layer and therefore decrease the heat transfer through the layer. A one dimensional model of a 1 mm thick semitransparent layer on a substrate was used in this study. The front of the semitransparent layer is heated by convection and radiation and the back of the substrate is cooled by radiation and convection. The coating is assumed to be semitransparent up to a cutoff wavelength and opaque at higher wavelengths. The absorption and scattering coefficient are constant over the wavelength range where the material is semitransparent. The absorption coefficient, scattering coefficients, width of the semitransparent band, and the bond coat emissivity are varied. Temperature profiles and heat flux through layers as a function of absorption and scattering coefficients are presented.

Spuckler, Charles M.↗

NASA NTRS1980

Liquid-phase electroepitaxy - Dopant segregation

A theoretical model is presented which accounts for the dopant segregation in liquid-phase electroepitaxy in terms of dopant transport in the liquid phase (by electromigration and diffusion), the growth velocity, and the Peltier effect at the substrate-solution interface. The contribution of dopant electromigration to the magnitude of the effective segregation coefficient is dominant in the absence of convection; the contribution of the Peltier effect becomes significant only in the presence of pronounced convection. Quantitative expressions which relate the segregation coefficient to the growth parameters also permit the determination of the diffusion constant and electromigration mobility of the dopant in the liquid phase. The model was found to be in good agreement with the measured segregation characteristics of Sn in the electroepitaxial growth of GaAs from Ga-As solutions. For Sn in Ga-As solution at 900 C the diffusion constant was found to be 4 x 10 to the -5 sq cm/s and the electromigration velocity (toward the substrate with a positive polarity 2 x 10 to the -5 cm/s current density of 10 A/sq cm.

Lagowski, J.↗

NASA NTRS1999

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Kaiser, Natalie↗

NASA NTRS1986

A computer program to calculate the resistivity of a thin film deposited on a conductive substrate from four-point probe measurements

A series of FORTRAN-77 programs is described which correct for the effect of a conducting substrate when a linear four-point probe is used to measure the resistivity of a thin film. The resistivity of the film is given in terms of the thicknesses of the film and substrate, the known resistivity of the substrate, and the measured delta V/I. A full development is given as well as a complete description of the operation of the programs. The programs themselves can be obtained through COSMIC, and are identified as LEW No. 14381.

Oberle, L. G.↗

NASA NTRS2002

Effects of space flight, clinorotation, and centrifugation on the substrate utilization efficiency of E. coli

Cultures of Escherichia coli grown in space reached a 25% higher average final cell population than those in comparably matched ground controls (p<0.05). However, both groups consumed the same quantity of glucose, which suggests that space flight not only stimulated bacterial growth as has been previously reported, but also resulted in a 25% more efficient utilization of the available nutrients. Supporting experiments performed in "simulated weightlessness" under clinorotation produced similar trends of increased growth and efficiency, but to a lesser extent in absolute values. These experiments resulted in increases of 12% and 9% in average final cell population (p<0.05), while the efficiency of substrate utilization improved by 6% and 9% relative to static controls (p=0.12 and p<0.05, respectively). In contrast, hypergravity, produced by centrifugation, predictably resulted in the opposite effect--a decrease of 33% to 40% in final cell numbers with corresponding 29% to 40% lower net growth efficiencies (p<0.01). Collectively, these findings support the hypothesis that the increased bacterial growth observed in weightlessness is a result of reduced extracellular mass transport that occurs in the absence of sedimentation and buoyancy-driven convection, which consequently also improves substrate utilization efficiency in suspended cultures.

manned↗

NASA NTRS2007

Method for nanoencapsulation of aerogels and nanoencapsulated aerogels produced by such method

A method for increasing the compressive modulus of aerogels comprising: providing aerogel substrate comprising a bubble matrix in a chamber; providing monomer to the chamber, the monomer comprising vapor phase monomer which polymerizes substantially free of polymerization byproducts; depositing monomer from the vapor phase onto the surface of the aerogel substrate under deposition conditions effective to produce a vapor pressure sufficient to cause the vapor phase monomer to penetrate into the bubble matrix and deposit onto the surface of the aerogel substrate, producing a substantially uniform monomer film; and, polymerizing the substantially uniform monomer film under polymerization conditions effective to produce polymer coated aerogel comprising a substantially uniform polymer coating substantially free of polymerization byproducts.Polymer coated aerogel comprising aerogel substrate comprising a substantially uniform polymer coating, said polymer coated aerogel comprising porosity and having a compressive modulus greater than the compressive modulus of the aerogel substrate, as measured by a 100 lb. load cell at 1 mm/minute in the linear range of 20% to 40% compression.

Sullivan, Thomas A.↗

NASA NTRS1999

Fabrication system, method and apparatus for microelectromechanical devices

A fabrication system and method of fabrication for producing microelectromechanical devices such as field-effect displays using thin-film technology. A spacer is carried at its proximal end on the surface of a substrate having field-effect emitters with the spacer being enabled for tilting movement from a nested position to a deployed position which is orthogonal to the plane of the substrate. An actuator is formed with one end connected with the substrate and another end connected with spacer. The actuator is made of a shape memory alloy material which contracts when heated through the material's phase-change transition temperature. Contraction of the actuator exerts a pulling force on the spacer which is tilted to the deployed position. A plurality of the spacers are distributed over the area of the display. A glass plate having a phosphor-coated surface is fitted over the distal ends of the deployed spacer.

Johnson, A. David↗

NASA NTRS2005

PDSOI and Radiation Effects: An Overview

Bulk silicon substrates are a common characteristic of nearly all commercial, Complementary Metal-Oxide-Semiconductor (CMOS), integrated circuits. These devices operate well on Earth, but are not so well received in the space environment. An alternative to bulk CMOS is the Silicon-On-Insulator (SOI), in which a &electric isolates the device layer from the substrate. SO1 behavior in the space environment has certain inherent advantages over bulk, a primary factor in its long-time appeal to space-flight IC designers. The discussion will investigate the behavior of the Partially-Depleted SO1 (PDSOI) device with respect to some of the more common space radiation effects: Total Ionized Dose (TID), Single-Event Upsets (SEUs), and Single-Event Latchup (SEL). Test and simulation results from the literature, bulk and epitaxial comparisons facilitate reinforcement of PDSOI radiation characteristics.

Forgione, Joshua B.↗

NASA NTRS2000

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

NASA NTRS1995

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2003

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2004

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2003

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

NASA NTRS2006

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗