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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Investigation of Rectifier Diode Failures in the NEXT-C Power Processing Unit

NASA's Evolutionary Xenon Thruster-Commercial (NEXT-C) project is tasked with developing flight electric propulsion systems, including both thrusters and power processing units (PPUs). In 2018, the beam supply in a NEXT-C engineering prototype PPU experienced an output rectifier diode failure during development thermal-vacuum testing. A failure investigation led by NASA GRC identified the root cause of the failure as a thermal runaway caused by increased reverse recovery losses in the diodes when the PPU was run at its maximum operating temperature. Significant reverse recovery performance variations were identified in diodes with the same part number but manufactured by different vendors. The failure investigation was able to collect evidence of the increased reverse recovery and replicate the diode failures in a controlled laboratory environment.

George L. Thomas↗
NASA NTRSDate not supplied

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment

We compare the failure mechanism and performance of a silicon carbide (SiC) semi-superjunction (semi-SJ) power DMOSFET against pure SJ and conventional DMOSFET when struck by a single heavy ion. The Single-Event Burnout (SEB) failure mechanism was identified as the thermal runaway from second breakdown resulting in mesoplasma formation. The semi-SJ design shifts the mesoplasma location from the drift/substrate interface seen in the control device structures to a location along the center of the P-pillar and closer towards the DMOSFET surface, thus significantly improving the SEB threshold voltage. The SEB threshold voltage varies with pillar width and ratio of pillar thickness to drift layer thickness. A maximum value of SEB threshold voltage is reached when the pillar to drift layer ratio is 0.9 and the pillar width is 2.4 μm. The semi-SJ SEB/breakdown voltage ratio is 100% and 13% higher than the pure SJ and conventional DMOSFET, respectively. Using a new figure of merit (FOM), which accounts for the tradeoff between SEB threshold voltage and on-state performance, we find that the SiC semi-SJ DMOSFET achieves a FOM that is 1.8 and 8 times higher than SJ and conventional DMOSFET, respectively, making the semi-SJ a competitive candidate for radiation hardened applications.

SiC↗
NASA NTRS2022

Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs

We explore and elucidate physical failure mechanisms in a 4H-SiC, high voltage, superjunction (SJ) vertical DMOSFET from a single heavy ion strike using three-dimensional electro-thermal transient simulations. The single-event burnout (SEB) failure is thermal runaway from second breakdown, initiated by impact ionization and terminated with mesoplasma formation, at the center of the P-pillar/N+ substrate interface. We also demonstrate that the SEB performance of this SiC SJ DMOSFET is insensitive to the pillar width but sensitive to the strike location with ion strike at the P-pillar causing SEB at a lower blocking voltage than at the N-pillar. Compared to commercially available 1.2 kV blocking-rated non-SJ DMOSFETs, which have been demonstrated to survive SEB up to 525 V, the SJ DMOSFET increases SEB survival threshold voltage (VSEB) by a factor of 2.2, making it close to 1200 V, while the on-resistance is increased by only 11%. Using our recently developed figure of merit (FoM), which considers the trade-off between VSEB and on-state performance, we find that the SiC SJ DMOSFET achieves a FoM that is 14 times better, making it superior to conventional 1.2 kV SiC DMOSFETs for long-term radiation-tolerant operation in space applications.

Silicon Carbide↗
NASA NTRSDate not supplied

Material Property Estimation in Thin Battery Components Using Guided Wave Measurement, Experimental Dispersion Curve Extraction and Finite Element Modeling

At NASA, we are investigating nondestructive evaluation (NDE) and structural health monitoring (SHM) techniques to detect precursors of thermal runaway failure in lithium metal based lithium ion batteries (LIB). The approach is centered on computational simulation models to guide inspection and aid in interpretation of results. Since lithium metal LIBs have combinations of solid and fluid-filled porous materials, obtaining accurate material properties is both challenging and critical for successful simulation of battery inspection. To this end, we investigated a multi-verification approach for material characterization of thin battery components. First, a laser Doppler vibrometer (LDV) was used to measure guided wave fields in thin (microns-thick) battery components subject to broadband excitation. The time-space wavefield data was converted to frequency-wave number data to extract guided wave dispersion curves. A data visualization and post processing graphics user interface (GUI) was developed at NASA to aid the data exploration and analysis. Due to the thinness of the samples, low frequency-thickness-product plate wave approximations allowed for the calculation of closed-form solutions for material elastic property estimation. These approximations were then verified by calculating the Lamb wave solutions using the previously obtained material properties. Finally, the estimated elastic material properties were implemented in a COMSOL simulation model, and dispersion curves were extracted from simulation results. The dispersion curves and derived material properties were then compared to the analysis results from the experimental data. These comparisons informed on the accuracy of the measured material properties and helped demonstrate the accuracy of the finite element analysis (FEA) computational models. This assessment will prove vital when we start simulating more complex multi-layer components and poroelastic media. This paper gives a brief background of the problem space, outlines the workflow for data analysis and verification, shows results from the workflow, and gives an overview of future plans for simulation of lithium metal LIB inspection.

Peter Juarez↗
NASA NTRS2016

The Inner Edge of the Habitable Zone for Synchronously Rotating Planets Around Low-Mass Stars Using General Circulation Models

Terrestrial planets at the inner edge of the habitable zone (HZ) of late-K and M-dwarf stars are expected to be in synchronous rotation, as a consequence of strong tidal interactions with their host stars. Previous global climate model (GCM) studies have shown that, for slowly rotating planets, strong convection at the substellar point can create optically thick water clouds, increasing the planetary albedo, and thus stabilizing the climate against a thermal runaway. However these studies did not use self-consistent orbital/rotational periods for synchronously rotating planets placed at different distances from the host star. Here we provide new estimates of the inner edge of the HZ for synchronously rotating terrestrial planets around late-K and M-dwarf stars using a 3D Earth-analog GCM with self-consistent relationships between stellar metallicity, stellar effective temperature, and the planetary orbital/rotational period. We find that both atmospheric dynamics and the efficacy of the substellar cloud deck are sensitive to the precise rotation rate of the planet. Around mid-to-late M-dwarf stars with low metallicity, planetary rotation rates at the inner edge of the HZ become faster, and the inner edge of the HZ is farther away from the host stars than in previous GCM studies. For an Earth-sized planet, the dynamical regime of the substellar clouds begins to transition as the rotation rate approaches ∼10 days. These faster rotation rates produce stronger zonal winds that encircle the planet and smear the substellar clouds around it, lowering the planetary albedo, and causing the onset of the water-vapor greenhouse climatic instability to occur at up to ∼25% lower incident stellar fluxes than found in previous GCM studies. For mid-to-late M-dwarf stars with high metallicity and for mid-K to early-M stars, we agree with previous studies.

Planet and satellite atmospheres↗
NASA NTRS2010

NASA Engineering and Safety Center Technical Bulletin No. 10-01: Power MOSFET Thermal Instability

In the quest for faster switching times and lower “on resistance” the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), produced since 1998, has achieved most intended goals. Unfortunately, lower “on resistance” and higher switching speeds in the designs now being produced allow the charge carrier dominated region to develop conditions that could lead to thermal runaway. Temperatures above 450º C on any location within the part can cause the metals to begin migrating causing a fatal short circuit.

Metal-Oxide Semiconductor Field-Effect Transistor ↗
NASA NTRSDate not supplied

Thin-Film Embedded Sensors for Battery Health Monitoring

Hybrid or all-electric aircraft are being developed as the next generation of aircraft to both allow new forms of aviation and decrease environmental impact. Since these types of aircraft are based on high-capacity battery technology, safe operation of these batteries becomes increasingly important. In particular, the potential for battery failure due to uncontrolled chemical reactions resulting in thermal runaway, catastrophic failure, and battery fires must be addressed in order for such battery technology to have the level of safety needed for standard aviation implementation. Efforts to ensure battery safety often involve engineering solutions that seek to contain rather than prevent such events by early detection. Such approaches increase the system weight and decrease the power per unit mass provided by the battery system. Existing methods for measuring battery parameters to determine the battery state-of-health are limited. These methods include electrical measurements of the cell current and/or voltage output as well as temperature measurements taken externally on the cell surface. Such external temperature measurements are limited in their ability to provide early warning of impending battery failure. In response, an effort to develop sensors operating internal to battery for health monitoring has been ongoing in the NASA Sensor-based Prognostics to Avoid Runaway Reactions & Catastrophic Ignition (SPARRCI) project. The basic approach associated with this sensor work is the deposition of thin film sensors on the battery separator located between the anode and cathode of the battery. These thin film sensors are then monitored to determine changes in battery parameters and health. Microfabrication techniques are employed to minimize the overall impact of the sensors on battery operation through the implementation of sensors with minimal size, weight, and power consumption. The thickness of the films, which are fabricated through physical vapor deposition (sputtering), are on the order of thousands of angstroms and can have minimal surface area. Thin film sensors for system health management have been implemented for a many decades on complex components for aerospace applications. However, the application of thin films of this type on a battery separator for internal battery monitoring applications has not previously been demonstrated to our knowledge. This paper describes the development of sensors for the internal battery monitoring through the use of thin film sensor technology. Thin metal films were successfully deposited on a battery separator polymer material with good adherence and electrical continuity. Multiple types of sensors have been deposited, as well as lead connections from the sensor to the edge of the separator material. The ability of these thin film sensors immersed in electrolyte to perform multiple types of battery parameter measurements has been demonstrated. For example, a multiparameter sensor system measured multiple properties simultaneously inside of a pouch cell over a wide temperature range. Further, real time measurement of interior temperature changes in a battery pouch cell with an integrated interior temperature sensor was demonstrated. These changes include detecting a fault in the battery (shorting) in situ with rapid response time (less than a minute) corresponding to a more limited response by a temperature sensor mounted externally. Other aspects of monitoring battery health were also explored, such as real-time measurement of simulated dendrite growth/metal deposition by sensor on separator material demonstrated. Future efforts will include improvements in the durability of the sensor structure to allow introduction of the approach into standard battery fabrication techniques. Overall, this work is a step forward in providing a method to prevent catastrophic battery failures and provide a foundation for safer, lighter, and higher energy batteries for the electric aircraft industry.

thin film battery health↗
NASA NTRSDate not supplied

Progress of Aluminum/Air Battery Development for SUSAN Electrofan Project

Safe and high-performance battery technologies are demanded by the Subsonic Single Aft eNgine (SUSAN) Electrofan concept design project under National Aeronautics and Space Administration (NASA) electrified aircraft development program. Aluminum (Al)-air battery with very high theoretical specific energy density, is considered as promising battery chemistry which has the potential to meet the targeted specific energy goal of primary battery energy technology for the SUSAN project. In addition to having the exceptional electrochemical properties, aluminum is light weight, rich abundance, low cost, environmentally friendly, and has a good electrical conductivity and recyclability, which is among the key characteristics of SUSAN project on battery energy needs. A non-flammable aqueous electrolyte is used to prevent the fire and thermal runaway hazard for the safety of this battery chemistry. However, there are challenges for Al-air battery in practical application, mainly due to self-corrosion of Al and slow kinetics of oxygen reduction in air-cathode to impact the high-rate performance. Progress on addressing these challenges was made and some of the results were reported in our previous paper. In this paper, the focus is on the investigation of various factors, including electrolyte concentrations, temperature, and air-cathode loadings on ionic transport properties and discharge performance at different current densities. The results are discussed, and the progress is reported.

James J Wu↗
NASA NTRS2026

High Temperature Dielectric Properties and Differential Scanning Calorimetry of Lunar Simulants

To guide development of microwave process technology that could be used during in situ construction on the Moon, we measured the high-temperature basic dielectric properties (εʹ and εʺ) of 17 lunar simulants and related materials. In order to confidently use these data one needs to understand the data’s strengths and weaknesses. Therefore, a goal of this publication is to provide insights into the comparative effects of sample composition, pre-treatments, experimental variables, high temperatures, and other factors on the measured response. The dielectric measurements were performed using the cavity perturbation method over a temperature range between room temperature to 1000 °C, or higher, and provided the real and imaginary components of permittivity at six frequencies. The utility of the original values was limited by the varying density of the pellets used in the measurement. Therefore, all of the εʹ and εʺ measurements at the frequency of 2466 MHz have been scaled to a constant density, 1.75 g/cm 3 . Here the data are presented as graphs chosen to aid analysis within and across simulant groups. To gain additional insight into the processes happening at the elevated temperatures in the dielectric measurements, heat capacity data was obtained using differential scanning calorimetry (DSC) on several of the simulant materials. Our data show that over the frequency range 397 MHz – 2985 MHz a material’s behavior does not greatly change, as compared to the scale of differences observed between lunar mare and highland simulants at high temperatures. For example at 1000 °C, the mare simulant JSC-1A absorbs 10 times more power than the highland simulant NUW-LHT-5M. We observe that as melting temperatures are reached both permittivity and dielectric loss rise non-linearly, helping to explain thermal runaway during microware heating. Our data show that even less than a few weight % of many non-lunar minerals, and the use of mixtures in simulants can affect the dielectric behavior at higher temperatures. A comparison of our results with published dielectric data for Apollo samples and with remote sensing of the Moon supports the conclusion the simulants and lunar material at room temperature have very similar dielectric values.

Differential Scanning Calorimetry↗
NASA NTRS1978

Spontaneous emission near the electron plasma frequency in a plasma with a runaway electron tail

Spontaneous emission of radiation with frequencies near the electron plasma frequency is studied for a plasma which consists of both thermal and runaway electrons. It is found that a substantial enhancement of the spontaneous radiation intensity can occur in this frequency regime via a Cherenkov resonance with the runaway electrons. Numerical analysis indicates that, for reasonable estimates of densities and energies, the plasma-frequency radiation can attain levels greater than the peak thermal emission at the second gyroharmonic.

Freund, H. P.↗
NASA NTRS1985

Silicon material and JPL Web Team

Silicon material activities are described. Topics discussed include: fluidized bed technology, model predictions (reaction kinetics and grid design parameters), seed-particle cleaning procedure, runaway nucleation, thermal analysis of dendritic ribbons, and residual stress in dendritic ribbons.

Lutwack, R.↗