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At least 145 records · Page 8

Properties of Single Crystalline Semiconducting CoSb3

A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration. Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb3 such as linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K. Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 sq cm/V.s at a carrier concentration of 1 x 10(exp 17)/cc. The results of the transport property measurements are discussed and are in agreement with some recent predictions based on band structure calculations. The potential of CoSb3 for thermoelectric applications is evaluated.

Caillat, T.↗

Thermoelectic Properties of Semiconducting Iridium

Semiconducting iridium silicides were synthesized and thermoelectric properties identified. IrSi indicated low resistivity and typical metallic seebeck was obtained.

Thermoelectric Semiconducting Iridium↗

Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pts. 1-3

The present conference discusses NASA mission planning for space nuclear power, lunar mission design based on nuclear thermal rockets, inertial-electrostatic confinement fusion for space power, nuclear risk analysis of the Ulysses mission, the role of the interface in refractory metal alloy composites, an advanced thermionic reactor systems design code, and space high power nuclear-pumped lasers. Also discussed are exploration mission enhancements with power-beaming, power requirement estimates for a nuclear-powered manned Mars rover, SP-100 reactor design, safety, and testing, materials compatibility issues for fabric composite radiators, application of the enabler to nuclear electric propulsion, orbit-transfer with TOPAZ-type power sources, the thermoelectric properties of alloys, ruthenium silicide as a promising thermoelectric material, and innovative space-saving device for high-temperature piping systems. The second volume of this conference discusses engine concepts for nuclear electric propulsion, nuclear technologies for human exploration of the solar system, dynamic energy conversion, direct nuclear propulsion, thermionic conversion technology, reactor and power system control, thermal management, thermionic research, effects of radiation on electronics, heat-pipe technology, radioisotope power systems, and nuclear fuels for power reactors. The third volume discusses space power electronics, space nuclear fuels for propulsion reactors, power systems concepts, space power electronics systems, the use of artificial intelligence in space, flight qualifications and testing, microgravity two-phase flow, reactor manufacturing and processing, and space and environmental effects.

El-Genk, Mohamed S.↗

Advanced thermoelectric material development at JPL

A large number of planetary missions under consideration for the next two decades will be using radioisotope thermoelectric generators to provide the necessary spacecraft electrical power. Performance, reliability, lifetime and cost of these RTGs are expected to be more demanding and will require the development of advanced thermoelectric materials. An advanced thermoelectric materials development program is being conducted by JPL and is the subject of this paper. Under this program, alloys of rare earth chalcogenides have been synthesized and their thermoelectric properties evaluated. The selection of specific compounds on which the program is currently concentrating is influenced by criteria such as low thermal conductivity, reasonably high operating temperatures (not less than 1000 C) and stability of the compounds. The paper discusses the rationale, approach and current status of the program. In addition, the thermoelectric and thermophysical property measurement used to evaluate the materials are described. The preliminary results and analysis of these experimental data are also given.

Stapfer, G.↗

Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe 3 Ge

Searching for Kagome magnets with novel magnetic and electronic properties has been attracting significant efforts recently. Here, the magnetic, electronic, and thermoelectric properties of Fe 3 Ge single crystals with Fe atoms forming a slightly distorted Kagome lattice are reported. It is shown that Fe 3 Ge exhibits a large anomalous Hall effect and anomalous Nernst effect. The observed anomalous transverse thermoelectric conductivity $|α^A_{xz}|$ reaches ≈4.6 A m −1 K −1 , which is larger than the conventional ferromagnets and most of the topological ferromagnets reported in literature. The first-principles calculations suggest that these exceptional transport properties are dominated by the intrinsic mechanism, which highlights the significant contribution of the Berry curvature of massive Dirac gaps in the momentum space. Additionally, a topological Hall resistivity of 0.9 µΩ cm and a topological Nernst coefficient of 1.2 µV K −1 are also observed, which are presumably ascribed to the Berry phase associated with the field-induced non-zero scalar spin chirality. These features highlight the synergic effects of the Berry phases in both momentum space and real space of Fe 3 Ge, which render it an excellent candidate for room-temperature thermoelectric applications based on transverse transport.

Kagome magnet↗

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Fleurial, Jean-Pierre↗

High performance thermoelectric materials and methods of preparation

Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Fleurial, Jean-Pierre↗

Topological magnons and topological electronic properties in metallic Kagome magnets

The primary goal of this project is to study metallic Kagome magnets that potentially host topological electronic properties and topological magnetic excitations, aiming to understand the effect of lattice geometry on topological character of magnons and electronic bands and to study the interplay between magnetism and topological electronic properties. Through this DOE-funded research program, we have unraveled novel electronic and thermoelectric properties of RMn 6 Sn 6 (R = Y, Tb, and Er) and Fe 3 Ge Kagome magnets, including anomalous Hall effect and anomalous Nernst effect, which are associated with the Berry curvature contribution from the massive Dirac gaps in the 3D momentum space. In addition, we have also revealed topological Hall effect and topological Nernst effect, and we ascribed these phenomena to the Berry curvature associated with the magnetic field-induced non-zero scalar spin chirality. These features highlight the synergic effects of the Berry phases in both momentum space and real space of Kagome magnets, which render them excellent candidates for room-temperature electronic and thermoelectric applications based on transverse transport. In addition, through this program we have also study novel thermal transport properties of quantum materials by probing the thermal Hall effect, which can provide crucial insights into nontrivial topological character and chirality of quasiparticles like magnons and magnon-polarons. This report provides an overview of some project activities related to these accomplishments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of structure and transport properties of the Ba 8 Cu 16 P 30 clathrate-I framework with the introduction of Ga

Two type-I clathrates were synthesized by introducing Ga into the framework of the Ba 8 Cu 16 P 30 type-I clathrate. The introduction of minute amounts of Ga, 1.9% Ga/M total (where M total = Cu + Ga), resulted in the disturbance of the completely ordered Pbcn superstructure of Ba 8 Cu 16 P 30 . Ba 8 Cu 15.43(2) Ga 0.3 P 30.26(3) crystallizes in a partially ordered orthorhombic Pmna clathrate-I superstructure with five out of 15 framework sites being jointly occupied by metal+phosphorus. Increasing the Ga content resulted in all framework sites being occupied by metal + phosphorus in the archetype cubic Pm n clathrate-I crystal structure of Ba 8 Cu 14.5(3) Ga 1.3 P 30.2(4) with 8.2% Ga/M total . A combination of energy dispersive x-ray spectroscopy, inductively coupled plasma mass spectroscopy, and single crystal x-ray diffraction was used to determine the structures alongside the compositions. The positional disorder was verified by 31 P solid state NMR spectroscopy. Characterization of the transport properties indicated that the Ga-substituted samples exhibit higher Seebeck coefficients and electrical resistivities compared to its pristine counterpart, in line with the expected reduction of the hole concentration due to Ga/Cu substitution. Moderate improvements in the thermoelectric power factor and overall figure-of-merit were observed for samples with 6.9% and 3.8% Ga/M total as compared to those for the pristine Ba 8 Cu 16 P 30 clathrate. Finally, band structure calculations shed light on how Ga substitution affects the electronic structure and thermoelectric properties of studied clathrates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Logarithmic criticality in transverse thermoelectric conductivity of the ferromagnetic topological semimetal CoMnSb

Here we report the results of our experimental studies on the magnetic, transport, and thermoelectric properties of the ferromagnetic metal CoMnSb. A sizable anomalous Hall conductivity $σ_{yx}$ and transverse thermoelectric conductivity $α_{yx}$ are found experimentally and comparable in size to the values estimated from first-principles calculation. Our experiment further reveals that CoMnSb exhibits -T log T critical behavior in $α_{yx}$ (T), deviating from Fermi liquid behavior $α_{yx}$ ~ T over a decade of temperature between 10 and 400 K, similar to ferromagnetic Weyl and nodal-line semimetals. Our theoretical calculation for CoMnSb also predicts the - T log T behavior when the Fermi energy locates near the Weyl nodes in momentum space.

36 MATERIALS SCIENCE↗

Advanced materials for high-temperature thermoelectric energy conversion

A number of refractory semiconductors are under study at the Jet Propulsion Laboratory for application in thermal to electric energy conversion for space power. The main thrust of the program is to improve or develop materials of high figure of merit and, therefore, high conversion efficiencies over a broad temperature range. Materials currently under investigation are represented by silicon-germanium alloys, lanthanum telluride, and boron carbide. The thermoelectric properties of each of these materials, and prospects for their further improvements, are discussed. Continued progress in thermoelectric materials technology can be expected to yield reliable space power systems with double to triple the efficiency of current state of the art systems.

Vining, Cronin B.↗

Heavily Doped PBSE with High Thermoelectric Performance

The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT (is) greater than 1.3 was observed when n(sub H) approximately 1.0 X 10(exp 20) cm(exp -3). The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.

Snyder, G. Jeffrey↗

Anomalous thermoelectricity at the two-dimensional structural transition of SnSe monolayers

The thermoelectric figure of merit ZT comprises electronic and vibrational contributions that drastically change across phase transitions, and the most common theoretical ab initio approach to thermoelectricity fails to describe the evolution of ZT across finite-temperature structural transitions in its entirety. Furthermore, while the thermoelectric behavior of bulk SnSe has been extensively studied, SnSe monolayers have been experimentally realized only recently, and the existent prediction of thermoelectricity on this two-dimensional material is unreliable because it misses its structural transition altogether. SnSe monolayers (and similar GeS, GeSe, GeTe, SnS, and SnTe monolayers) experience a temperature-induced two-dimensional Pnm2 1 → P4/nmm structural transition precipitated by the softening of vibrational modes, and we describe their thermoelectric properties across the phase transition, using molecular dynamics data to inform both electronic and vibrational coefficients directly and within the same footing. Similar to recent experimental observations pointing to an overestimated ZT past the transition temperature in bulk SnSe, we find a smaller ZT on SnSe monolayers when compared to its value predicted by the standard paradigm, due to the dramatic changes in the electrical conductivity and lattice thermal conductivity as the structural transition ensues. Here, the process described here lends a strong focus to both the vibrational and electronic evolutions throughout the structural transition, and it applies to thermoelectric materials undergoing thermally driven solid-to-solid structural phase transitions in one, two, and three dimensions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗