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At least 145 records · Page 8

Ares V: Progress Toward Unprecedented Heavy Lift

Ares V represents the vehicle that will again make possible human exploration beyond low Earth orbit. The Ares V is part of NASA s Constellation Program architecture developed to support the International Space Station (ISS), establish a permanent human presence on the Moon, and explore it to an extent far greater than was possible with the Apollo Program. Ares V will carry the lunar lander to orbit where it will join the Orion crew spacecraft, launched by the smaller Ares I launch vehicle. Then the Ares V upper stage will send the Orion and lander to the Moon. Ares V is also intended to launch automated cargo landers to the Moon. The Ares vehicles are designed to employ the proven technologies and experience from the Space Shuttle, Delta IV, and earlier U.S. programs, as well as sharing common components where feasible. The Ares V is in an early stage of concept development. However, commonality allows it to benefit from development work already under way on the Ares I, including the first stage booster, and upper stage, J-2X upper stage engine. This paper will discuss progress to date on the Ares V and its potential for freeing payload designers from current mass and volume constraints. Progress includes development progress on Ares I elements that will be shared by the two launch vehicles. The Ares I first stage recently completed a successful test firing of Development Motor 1 (DM-1). The J-2X engine is proceeding with manufacturing of components for the first development engines that will be used for testing. Several component-level tests have been completed or are under way that will help verify designs and confirm solutions to design challenges. The Ares V Earth departure stage will benefit from the Ares I upper stage development, including design, manufacturing, and materials testing. NASA is also working with government and industry to collect data on flights and testing of the operational RS-68 engine and potential upgrades. The Ares V team continues to evaluate technical options, vehicle configurations, and operations concepts for the Ares V. The team recently completed a Fall Face-to-Face meeting that served as a stepping-stone to the Systems Requirements Review (SRR). This four-day meeting served as an information exchange for the various teams at several NASA field centers and supporting contractors.

Sumrall, Phil↗

In-situ hydrogen microstructural characterization of Si heterojunction passivation: Addressing V OC degradation and mitigation pathways

Si heterojunction (SHJ) solar cells have demonstrated record efficiency >27%, approaching the theoretical limit of ≈ 29%, primarily due to best surface/interface defect passivation provided by deposited thin layers of hydrogenated amorphous silicon (a-Si:H). Such excellent surface/interface passivation reduces recombination loss and result in >100 mV improvement of cell open circuit voltage (V OC ) to ≈ 750 mV, thus the cell efficiency. However, fielded SHJ modules exhibit loss of V OC and hence efficiency over time in years, presumably due to degradation related to a-Si:H layers. This adversely affects the technology’s market acceptance, and levelized cost of energy (LCOE). It is hypothesized that the origin of a-Si:H degradation is somehow related to the presence of weak Si–Si bonds and hydrogen in a-Si:H films. The objective of this project is to test this hypothesis by directly measuring chemical and structural changes occurring within SHJ component layers and solar cells. This is achieved by developing an innovative in-situ Fourier transform infrared (FTIR) spectrometry apparatus to monitor hydrogen microstructural changes occurring within amorphous silicon and decipher hydrogen evolution kinetics over time when samples are exposed to heat and/or light stress. These in-situ measured hydrogen microstructural changes are correlated to the changes in effective minority carrier lifetime (τ eff ), implied V OC (iV OC ), surface recombination velocity (S), and cell V OC . These mechanistic understandings will provide critical guidance to mitigate the V OC -driven degradation of SHJ solar cell performance. Passivation optimization and degradation analysis of individual SHJ component structures were achieved through systematic deposition of three symmetric structures and the completed SHJ solar cell structure. The three symmetric structures used were intrinsic a-Si:H [(i)a-Si:H] layers in a bilayer structure, intrinsic and p-type doped stacked layers [(i-p)a-Si:H] representing the front heterojunction in the SHJ cell, and intrinsic and n-typed doped stacked layers [(i-n)a-Si:H] representing the back-side back surface field (BSF) in the SHJ cell. State-of-the-art passivation qualities are demonstrated by a champion iV OC of 740 mV for the (i)a-Si:H layers, and the (i-n)a-Si:H symmetric structure. A 725 mV iV OC is observed for the (i-p)a-Si:H symmetric structure. These symmetric passivated SHJ component structures were subsequently subjected to different accelerated lifetime (ALT) stressors to identify which conditions contribute the most to iV OC degradation. Degradation of the thin (10 nm) (i)a-Si:H passivation layers without any additional overlying layers is minimal; complexity of this study arises due to unavoidable surface oxidation of (i)a-Si:H layer during most of the stress application, which is likely irrelevant for a full SHJ cell configuration with overlying protective layers. The iV OC degradation of symmetric structures is found to occur primarily at the (i-p)a-Si:H passivation stack under dark heat stress with associated hydrogen loss from the (p)a-Si:H layer. An activation energy for increase in S (defect creation) of 0.65 eV can be correlated to the activation energy of ≈ 0.4 eV for hydrogen loss from the (i-p)a-Si:H stack. This also suggests the presence of weakly bonded hydrogen in the (p)a-Si:H films, which effuses out of the film stack at such low activation energy. When light and heat stress are applied together, similar hydrogen loss from (i-p)a-Si:H stack is observed, however, does not appreciably degrade iV OC or increase S. This is an important result and departure from direct correlation between hydrogen loss and defect creation. This perhaps indicates additional defect chemistries or annealing that might be occurring in the presence of light requiring further detailed defect measurements. The full SHJ cell structure used for this project is depicted in Fig.1(d). SHJ cells with an initial V OC ≈ 700 mV were fabricated and subjected to similar ALT stress conditions. Cell V OC is found to degrade the most under dark heat stress and is confirmed by observed hydrogen migration out of the (i-p)a-Si:H stack. However, hydrogen cannot escape from the cell stack, it accumulates near the (p)a-Si:H/ITO contact interface, where ITO acts as a barrier preventing hydrogen loss. Furthermore, light-heat combined stress does not degrade V OC appreciably, confirming the occurrence of a defect annealing process.

14 SOLAR ENERGY↗

Electrochemical Phase Engineering of γ′-V 2 O 5 Thin Films for Sodium-Ion Storage Electrodes

V 2 O 5 is a promising sodium-ion cathode material due to its high theoretical capacity (147 mAh/g) and working voltage (3.3 V vs Na/Na + ). Among its various crystal phases, γ′-V 2 O 5 has a large interlayer spacing, ensuring the reversible insertion–extraction of sodium ions. However, current synthesis methods for γ′-V2O5 require high temperatures (>600 °C) and toxic chemicals (NO 2 BF 4 ), which make the preparation demanding. Herein, we put forward an electrochemical phase engineering method combining thermal annealing and electrochemistry to easily prepare thin-film γ′-V 2 O 5 . Electrochemical characterization shows near-ideal performance as a thin-film cathode material for sodium-ion batteries. It shows a measured initial capacity of 152 mAh/g, a high working voltage (3.3 V vs Na + /Na), and an exceptional Coulombic efficiency of 98%, significantly surpassing previously reported values (∼50% CE). Cyclic voltammogram and galvanostatic capacity curves confirm the sodium insertion–deinsertion, which remains stable at 2 C. The γ′-V 2 O 5 thin film has electrochemical performance similar to γ′-V 2 O 5 powder, indicating another workable morphology of γ′-V 2 O 5 for sodium-ion batteries.

batteries↗

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗

Statistics of Delta v magnitude for a trajectory correction maneuver containing deterministic and random components

A number of interplanetary missions now being planned involve placing deterministic maneuvers along the flight path to alter the trajectory. Lee and Boain (1973) examined the statistics of trajectory correction maneuver (TCM) magnitude with no deterministic ('bias') component. The Delta v vector magnitude statistics were generated for several values of random Delta v standard deviations using expansions in terms of infinite hypergeometric series. The present investigation uses a different technique (Monte Carlo simulation) to generate Delta v magnitude statistics for a wider selection of random Delta v standard deviations and also extends the analysis to the case of nonzero deterministic Delta v's. These Delta v magnitude statistics are plotted parametrically. The plots are useful in assisting the analyst in quickly answering questions about the statistics of Delta v magnitude for single TCM's consisting of both a deterministic and a random component. The plots provide quick insight into the nature of the Delta v magnitude distribution for the TCM.

Bollman, W. E.↗

Optimizing IV and V for Mature Organizations

NASA is intending for its future software development agencies to have at least a Level 3 rating in the Carnegie Mellon University Capability Maturity Model (CMM). The CMM has built-in Verification and Validation (V&V) processes that support higher software quality. Independent Verification and Validation (IV&V) of software developed by mature agencies can be therefore more effective than for software developed by less mature organizations. How is Independent V&V different with respect to the maturity of an organization? Knowing a priori the maturity of an organization's processes, how can IV&V planners better identify areas of need choose IV&V activities, etc? The objective of this research is to provide a complementary set of guidelines and criteria to assist the planning of IV&V activities on a project using a priori knowledge of the measurable levels of maturity of the organization developing the software.

Fuhman, Christopher↗

Update on the Ares V to Support Heavy Lift for U.S. Space Exploration Policy

The focus of design efforts in the near future will be on the primary Lunar mission. We are currently just beginning to integrate the design functions from the various centers for this mission. We appreciate all thoughts and ideas for different ways to use the Ares V platform. The Ares V can support an order of magnitude more science instrumentation for outer planetary exploration missions. It can also reach outer planets such as Neptune and other high energy insertion destinations. Current Ares V Point-of-Departure (51.00.48) exceeds Saturn mass capability by approx.40%. Ares V Lunar Capabilities Concept Review analysis focused on meeting lunar requirements and developing margin. Ares V is sensitive to Loiter, Attitude, Power, and Altitude requirements in addition to payload performance. LCCR-approved 51.00.48 POD 5.5-segment steel case booster/6 engine core) Ares V can meet current Human Lunar Return requirements with approx.6 mT of Margin. LCCR-approved 51.00.47 option maintained (5 segment HTPB composite case booster/6 engine core) can meet HLR requirement with more than 9 mT Margin. Ares V team is actively reaching out to external organizations during this early concept phase to ensure that the Ares V vehicle can be leveraged for national security, scientific and commercial development needs.

Creech, Steve↗

Ares V: Shifting the Payload Design Paradigm

NASA is designing the Ares V heavy-lift cargo launch vehicle to send more crew and cargo to more places on the lunar surface than the 1960s-era Saturn V and to provide ongoing support for a permanent lunar outpost. This uncrewed cargo vehicle is designed to operate together with the Ares I crew vehicle (Figure 1). In addition to this role, however, its unmatched mass and volume capability represent a national asset for exploration, science, and commerce. The Ares V also enables or significantly enhances a large class of space missions not thought possible by scientists and engineers since the Saturn V program ended over 30 years ago. Compared to current systems, it will offer approximately five times the mass and volume to most orbits and locations. This should allow prospective mission planners to build robust payloads with margins that are three to five times the industry norm. The space inside the planned payload shroud has enough usable volume to launch the volumetric equivalent of approximately 10 Apollo Lunar Modules or approximately five equivalent Hubble Space Telescopes. This mass and volume capability to low-Earth orbit (LEO) enables a host of new scientific and observation platforms, such as telescopes, satellites, planetary and solar missions, as well as being able to provide the lift for future large in-space infrastructure missions, such as space based solar power and mining, Earth asteroid defense, propellant depots, etc. In addition, payload designers may also have the option of simplifying their designs or employing Ares V s payload as dumb mass to reduce technical and operational risk. The Ares V team is engaging the potential payload community now, two to three years before System Requirements Review (SRR), in order to better understand the additional requirements from the payload community that could be accommodated in the Ares V design in its conceptual phase. This paper will discuss the Ares V reference mission and capability, as well as its potential to perform other missions in the future.

Sumrall, Phil↗

Analysis of Phoenix Anomalies and IV & V Findings Applied to the GRAIL Mission

NASA IV&V was established in 1993 to improve safety and cost-effectiveness of mission critical software. Since its inception the tools and strategies employed by IV&V have evolved. This paper examines how lessons learned from the Phoenix project were developed and applied to the GRAIL project. Shortly after selection, the GRAIL project initiated a review of the issues documented by IV&V for Phoenix. The motivation was twofold: the learn as much as possible about the types of issues that arose from the flight software product line slated for use on GRAIL, and to identify opportunities for improving the effectiveness of IV&V on GRAIL. The IV&V Facility provided a database dump containing 893 issues. These were categorized into 16 bins, and then analyzed according to whether the project responded by changing the affected artifacts or using as-is. The results of this analysis were compared to a similar assessment of post-launch anomalies documented by the project. Results of the analysis were discussed with the IV&V team assigned to GRAIL. These discussions led to changes in the way both the project and IV&V approached the IV&V task, and improved the efficiency of the activity.

Larson, Steve↗

$K^0_S$ meson production in inelastic p+p interactions at 31, 40 and 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ beam momentum measured by NA61$/$SHINE at the CERN SPS

The yields of $K^0_S$ mesons have been measured in inelastic p+p interactions at incident projectile momenta of 31, 40 and 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ ($\sqrt{s_{NN}}=7.7, 8.8$ and 12.3 $\text {Ge}\hspace{-1.00006pt}\text {V}$, respectively). The data were recorded by the NA61$/$SHINE spectrometer at the CERN Super Proton Synchrotron and the $K^0_S$ mesons identified via their decays into $\pi ^{+} \pi ^{-}$ pairs. Double-differential distributions are presented as function of transverse momentum and rapidity. The mean multiplicities of $K^0_S$ mesons were determined to be $(5.95 \pm 0.19 (stat) \pm 0.30 (sys)) \times 10^{-2}$ at 31 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$, $(7.61 \pm 0.13 (stat) \pm 0.43 (sys)) \times 10^{-2}$ at 40 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ and $(11.58 \pm 0.12 (stat) \pm 0.55 (sys)) \times 10^{-2}$ at 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$. The results on $K^{0}_{S}$ production are compared with the production of charged kaons in corresponding reactions and with model calculations (Epos1.99, SMASH 2.0 and PHSD) as well as with published data from other experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗

Discovering novel therapeutic V H Hs for emerging viruses: perspectives from VEEV selection strategies

Introduction: Evolution or emergence of a new viral variant is a significant public health concern. Alphaviruses, such as Venezuelan equine encephalitis virus (VEEV), are mosquito-borne viruses which are becoming more prevalent due to expansion of vector habitats. Despite this, there are currently no antiviral therapies or FDA-approved vaccines available to treat or prevent VEEV infection. The increased prevalence of such viruses provides opportunities for novel variants to evolve. Key therapeutic molecules that could be developed against viral pathogens are recombinant antibodies or antibody fragments, such as the variable heavy domain of heavy chain antibodies (V H Hs). Methods: In vitro selections offer a promising pathway for identification of therapeutic antibodies, here we explored isolation of V H Hs using phage and yeast display methodology with three antigen formats 1) recombinant E2, 2) linear peptides of E2, selected based on molecular dynamics analysis, and 3) UV inactivated virus. Results: Here we report four novel “human” V H Hs which bind to the VEEV E2 protein selected using different strategies that include both computational and biochemical design of suitable antigens and whole virus selections. These V H Hs have distinct complementarity-determining regions (CDRs). Multiple VHHs bind to the VEEV viral particles in ELISAs, and we report the peptide epitope recognized by these V H Hs. Discussion: Though non-neutralizing, these V H Hs bind to and sequester VEEV viral particles preventing infection, demonstrating the potential of these V H Hs to perform viral “sponging” which represents a novel therapeutic approach. The selection strategies we report may have applications to further antibody developments against other viruses.

59 BASIC BIOLOGICAL SCIENCES↗

Phase V of the single-breath washout test

A downward-deflecting phase V is often seen following the terminal rise (phase IV) in single-breath washout tests. To investigate the nature of phase V, experiments using simultaneous washouts of N2 and tracer boluses of Ar were performed on eight normal nonsmoking subjects aged 27-41 who exhibited a phase V. Phase V is found to occur in all subjects at expiratory flow rates between 0.1 and 2.0 l/sec shortly after expiration became flow limited. Volumes of both phases IV and V increase with increasing flow rate. The difference between the exhaled volumes at which flow became limited and phase V appeared is shown to be approximately equal to the anatomic dead space. Results support a model of lung emptying in a gravitational field in which flow limitation occurs first in the lower lung regions and then progresses toward the upper regions, causing phase IV. A decrease in the amount of flow from the upper relative to the lower regions after all regions have become flow limited then causes phase V.

Nichol, G. M.↗

Observation of Vibrational Relaxation Dynamics in X(sup 3)Sigma(sup -)(sub g) Oxygen Following Stimulated Raman Excitation to the v=1 Level: Implications for the RELIEF Flow Tagging Technique

The vibrational relaxation of ground-state molecular oxygen (O2, X(sup 3)Sigma(sup -)(sub g)) has been observed, following stimulated Raman excitation to the first excited vibrational level (v=1). Time delayed laser-induced fluorescence probing of the ro-vibrational population distribution was used to examine the temporal relaxation behavior. In the presence of water vapor, the relaxation process is rapid, and is dominated by near-resonant vibrational energy exchange between the v=1 level of O2 and the n2 bending mode of H2O. In the absence of H2O, reequilibration proceeds via homogeneous vibrational energy transfer, in which a collision between two v=1 O2 molecules leaves one molecule in the v=2 state and the other in the v=0 state. Subsequent collisions between molecules in v=1 and v>1 result in continued transfer of population up the vibrational ladder. The implications of these results for the RELIEF flow tagging technique are discussed.

Diskin, Glenn S.↗

Robust Requirements Tracing via Internet Search Technology: Improving an IV and V Technique

There are three major objectives to this phase of the work. (1) Improvement of Information Retrieval (IR) methods for Independent Verification and Validation (IV&V) requirements tracing. Information Retrieval methods are typically developed for very large (order of millions - tens of millions and more documents) document collections and therefore, most successfully used methods somewhat sacrifice precision and recall in order to achieve efficiency. At the same time typical IR systems treat all user queries as independent of each other and assume that relevance of documents to queries is subjective for each user. The IV&V requirements tracing problem has a much smaller data set to operate on, even for large software development projects; the set of queries is predetermined by the high-level specification document and individual requirements considered as query input to IR methods are not necessarily independent from each other. Namely, knowledge about the links for one requirement may be helpful in determining the links of another requirement. Finally, while the final decision on the exact form of the traceability matrix still belongs to the IV&V analyst, his/her decisions are much less arbitrary than those of an Internet search engine user. All this suggests that the information available to us in the framework of the IV&V tracing problem can be successfully leveraged to enhance standard IR techniques, which in turn would lead to increased recall and precision. We developed several new methods during Phase II; (2) IV&V requirements tracing IR toolkit. Based on the methods developed in Phase I and their improvements developed in Phase II, we built a toolkit of IR methods for IV&V requirements tracing. The toolkit has been integrated, at the data level, with SAIC's SuperTracePlus (STP) tool; (3) Toolkit testing. We tested the methods included in the IV&V requirements tracing IR toolkit on a number of projects.

Hayes, Jane↗

Ares V Overview and Status

As part of NASA s Constellation Program to resume exploration beyond low Earth orbit (LEO), the Ares V heavy-lift cargo launch vehicle as currently conceived will be able to send more crew and cargo to more places on the Moon than the Apollo Program Saturn V. (Figure 1) It also has unprecedented cargo mass and volume capabilities that will be a national asset for science, commerce, and national defense applications. Compared to current systems, it will offer approximately five times the mass and volume to most orbits and locations. The Columbia space shuttle accident, the resulting investigation, the Vision for Space Exploration, and the Exploration Systems Architecture Study (ESAS) broadly shaped the Constellation architecture. Out of those events and initiatives emerged an architecture intended to replace the space shuttle, complete the International Space Station (ISS), resume a much more ambitious plan to explore the moon as a stepping stone to other destinations in the solar system. The Ares I was NASA s main priority because of the goal to retire the Shuttle. Ares V remains in a concept development phase, evolving through hundreds of configurations. The current reference design was approved during the Lunar Capabilities Concept Review/Ares V Mission Concept Review (LCCR/MCR) in June 2008. This reference concept serves as a starting point for a renewed set of design trades and detailed analysis into its interaction with the other components of the Constellation architecture and existing launch infrastructure. In 2009, the Ares V team was heavily involved in supporting the Review of U.S. Human Space Flight Plans Committee. Several alternative designs for Ares V have been supplied to the committee. This paper will discuss the origins of the Ares V design, the evolution to the current reference configuration, and the options provided to the review committee.

Creech, Steve↗

Synergistic Development, Test, and Qualification Approaches for the Ares I and V Launch Vehicles

The U.S. National Aeronautics and Space Administration is designing and developing the Ares I and Ares V launch vehicles for access to the International Space Station (ISS) and human exploration of the Moon. The Ares I consists of a first stage reusable five-segment solid rocket booster, a upper stage using a J-2X engine derived from heritage experience (Saturn and Space Shuttle External Tank programs), and the Orion crew exploration vehicle (CEV). The Ares V is designed to minimize the development and overall life-cycle costs by leveraging off of the Ares I design. The Ares V consists of two boosters, a core stage, an earth departure stage (EDS), and a shroud. The core stage and EDS use LH2/LO2 propellants, metallic propellant tanks, and composite dry structures. The core stage has six RS-68B upgraded Delta IV engines while the EDS uses a J-2X engine for second stage ascent and trans-lunar injection (TLI) burn. System and propulsion tests and qualification approaches for Ares V elements are being considered as follow-on extensions of the Ares I development program. Following Ares I IOC, testing will be conducted to verify the J-2X engine's orbital restart and TLI burn capability. The Ares I upper stage operation will be demonstrated through integrated stage development and acceptance testing. The EDS will undergo similar development and acceptance testing with additional testing to verify aspects of cryogenic propellant management, operation of sub-systems in a space simulation environment, and orbital re-start of the main propulsion system. RS-68B certification testing will be conducted along with integrated core stage development and acceptance testing. Structural testing of the Ares V EDS and core stage propellant tanks will be conducted similar to the Ares I upper stage. The structural qualification testing may be accomplished with separate propellant tank test articles. Structural development and qualification testing of the dry structure will be pursued as part of the design and development process. Especially critical is the development test program for the composite structures. The Ares V payload shroud will undergo acoustic, vibration, structural qualification, and deployment testing in a space simulation environment. Similar to Ares I, requirements for full-scale structural dynamic testing are being studied. Both Ares I and Ares V include validation flight testing as part of the qualification programs.

Cockrell, Charles E.↗