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At least 145 records · Page 8

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NASA NTRS1979

Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors

The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.

Shibib, M. A.↗

NASA NTRS1983

Investigation of nickel-silicon metallization process

The metallization of silicon solar cells passivated with silicon nitride coating was investigated by using commercial Ni pastes #5517 from Thick Film Systems, #7028-5 from Cermalloy, experimental formulation # X-A by Sollos, Inc. and evaporated Ti-Ni film. Comparative and reference tests were done with the Dupont Ag paste #7095 and with a mixture of Ni paste #5517 with Ag paste #7095 in the respective ratio of 9 to 1 by weight. The evaluation criteria for the metallization was the mechanical bond strength of the contact, solderability, copper plating ability and electrical characteristics in terms of Voc, Isc values and shape of the V-I curve. The results revealed that the Dupont Ag paste #7095 mt all required criteria, while the quality of the cells metalized with the commercial Ni paste #5517 from Thick Film Systems, #7028-5 from Cermalloy as well as the experimental paste # X-A from Sollos, Inc. was below the acceptable standards. A significant improvement was obtained with the mixture of Ni paste #5517 from Thick Film Systems with 10% addition of Dupont paste # 7095.

Macha, M.↗

NASA NTRS1983

Limitations on solar cell open-circuit voltage and efficiency

Techniques used to determine the open-circuit voltage of solar cells are analyzed. It is noted that the computational procedures for determining the output characteristics of a solar cell depend on a thorough understanding of the behavior of individual components. However, amorphous materials and combination solar cells exhibit increasingly complex behaviors and theoretical analyses therefore are continually more dependent on experimental data for verification. Formulations are defined for the base region and for diffusion length measurement. Experimental results are cited to show that, for low resistivity, planar surface cells, the dark current from the emitter is the dominant factor limiting increases in the Voc, which can be enhanced by improving the efficiency of the doping levels and profile to minimize the effects of bandgap narrowing, junction recombination current, and diffusion length of the emitter region.

Meulenberg, A., Jr.↗

NASA NTRS1983

Silicon solar cell process development, fabrication and analysis

Measurements of minority carrier diffusion lengths were made on the small mesa diodes from HEM Si and SILSO Si. The results were consistent with previous Voc and Isc measurements. Only the medium grain SILSO had a distinct advantage for the non grain boundary diodes. Substantial variations were observed for the HEM ingot 4141C. Also a quantitatively scaled light spot scan was being developed for localized diffusion length measurements in polycrystalline silicon solar cells. A change to a more monochromatic input for the light spot scan results in greater sensitivity and in principle, quantitative measurement of local material qualities is now possible.

Leung, D. C.↗

NASA NTRS1985

RAY-O-VAC BR2325 Lithium Carbon Monofluoride Cell Performance

RAY-O-VAC currently markets a 160 mAH lithium cell recommended for usage in watch and calculator products. The lithium carbon monofluoride cell offers an extended shelf life with no reduction in performance effectiveness. The BR2325 cell has aerospace applications for memory devices and telemetry systems. Over one hundred thirty (130) cells were purchased and tested for evaluation purposes. The test statistics and overall cell performance of the RAY-O-VOC BR2325 lithium carbon monofluoride cell is reviewed.

Mcdermott, J. K.↗

NASA NTRS1984

Emitter formation in dendritic web silicon solar cells

The use of liquid dopants and liquid masks for p-n junction formation in dendritic web solar cells was investigated and found to be equivalent to the use of gaseous dopants and CVD SiO2 masks previously used. This results in a projected cost reduction of 0.02 1980$/Watt for a 25 MW/year production line, and makes possible junction formation processes having a higher throughput than more conventional processes. The effect of a low-energy (0.4 keV) hydrogen ion implant on dendritic web solar cells was also investigated. Such an implant was observed to improve Voc and Jsc substantially. Measurements of internal quantum efficiency suggest that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. The diffusion length for electrons in the p-type base increased from 53 microns to 150 microns in one case, with dendritic web cell efficiency being boosted to 15.2 percent. The mechanism by which low-energy hydrogen ions can penetrate deeply into the silicon to effect the observed improvement is not known at this time.

Meier, D. L.↗

NASA NTRS1984

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗

NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗

NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗

NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗

NASA NTRS1985

Observed changes in a-Si:H cell characteristics due to long term temperature stress

Determination of thermally induced degradation mechanisms affecting thin film amorphous silicon solar cells through the use of laboratory accelerated stress testing requires acquisition of specially constructed, individually addressable test cells and the development of highly repeatable instrumentation which is not influenced by short-term reversible optical effects. This paper illustrates these considerations by describing accelerated temperature stress procedures and test results for one type of a-Si:H cell. Observed electrical characteristic changes indicate that two types of stress induced mechanisms are operating - one of which is self limiting and can be observed at lower temperatures and one which continues to complete degradation. The self limiting mechanism can result in a dramatic improvement to cells having initially low Voc values.

Lathrop, Jay W.↗

NASA NTRS1987

Pilot production experience of LPE GaAs solar cells

This paper is a follow-up to a previous paper written following the completion of Spectrolab's LPE GaAs production facility in 1985 (Mardesich et al., 1985). Progress made since that time is discussed. Significant improvements in the manufacture of these devices, resulting in better cell performance and higher yields, are described. Pilot production cell performance data are presented, including lot distribution of efficiency, Jsc, Voc and CFF. 1-MeV electron radiation damage results are reported.

Gillanders, M.↗

NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗

NASA NTRS1988

Temperature coefficients for concentrator cells at various electron and proton fluence levels

Data are presented on the Isc, Voc and Pmax temperature coefficients for several small concentrator solar cells. The cells are AlGaAs (1.72 eV), GaAs, silicon and InGaAs (1.1 eV) concentrator cells operating at 6.25 and 100 times AM0. The temperature range covered was 25 to 100 C. Cells were irradiated with 1-MeV electrons and 37-MeV protons, and data are presented at different fluence levels.

Curtis, Henry B.↗

NASA NTRS1988

High efficiency GaAs/Ge monolithic tandem solar cells

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

Tobin, S. P.↗

NASA NTRS1988

High altitude current-voltage measurement of GaAs/Ge solar cells

Measurements of high-voltage (Voc of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68 percent AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7 percent. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.

Hart, Russell E., Jr.↗

NASA NTRS1991

New research on bioregenerative air/water purification systems

For the past several years, air and water purification systems have been developed and used. This technology is based on the combined activities of plants and microorganisms as they function in a natural environment. More recently, researchers have begun to address the problems associated with indoor air pollution. Various common houseplants are currently being evaluated for their abilities to reduce concentrations of volatile organic compounds (VOCS) such as formaldehyde and benzene. With development of the Space Exploration Initiative, missions will increase in duration, and problems with resupply necessitates implementation of regenerative technology. Aspects of bioregenerative technology have been included in a habitat known as the BioHome. The ultimate goal is to use this technology in conjunction with physicochemical systems for air and water purification within closed systems. This study continued the risk assessment of bioregenerative technology with emphasis on biological hazards. In an effort to evaluate the risk for human infection, analyses were directed at enumeration of fecal streptococci and enteric viruses with the BioHome waste water treatment system.

Johnson, Anne H.↗

NASA NTRS1991

Effect of dislocations on properties of heteroepitaxial InP solar cells

The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

Weinberg, I.↗