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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

X-Y alphanumeric character generator for oscilloscopes

A method and apparatus is disclosed by which any general purpose external trigger laboratory oscilloscope can be utilized to display alphanumeric characters. Each character to be displayed is composed of a plurality of segments appearing at various segment positions in various segment rows to define a conventional matrix. In between character segments to be displayed, or when no display is desired, the trace is effectively blanked by a vertical clamping voltage so as to position the oscilloscope trace in an off-screen position. The clamping technique of the invention, i.e., biasing the oscilloscope trace to an off-screen position when no character segment is to be displayed; it eliminates the necessity of providing Z-axis modulation to effect blanking.

Lokerson, D. C.↗

Auditory display for the blind

A system for providing an auditory display of two-dimensional patterns as an aid to the blind is described. It includes a scanning device for producing first and second voltages respectively indicative of the vertical and horizontal positions of the scan and a further voltage indicative of the intensity at each point of the scan and hence of the presence or absence of the pattern at that point. The voltage related to scan intensity controls transmission of the sounds to the subject so that the subject knows that a portion of the pattern is being encountered by the scan when a tone is heard, the subject determining the position of this portion of the pattern in space by the frequency and interaural difference information contained in the tone.

Fish, R. M.↗

Portable device for use in starting air-start-units for aircraft and having cable lead testing capability

A portable device for starting aircraft engines and the like is disclosed. The device includes a lead testing and motor starting circuit characterized by: (1) a direct current voltage source, (2) a pair of terminal plugs connected with the circuit (each being characterized by a first, second, and third terminal) (3) a pair of manually operable switches for connecting the first terminal of each plug of the pair to the positive side of the voltage source, (4) a circuit lead connecting to the second terminal of each plug the negative side of said source, (5) a pair of electrical cables adapted to connect said first and second terminals of each plug to an air-start unit, and means for connecting each cable of the pair of cables between the first terminal of one plug and the third terminal of the other plug of the pair, and (6) a second pair of manually operable switches for selectivity connecting the third terminal of each plug of the pair to the negative side of the voltage source.

Rosier, W. R.↗

The characteristics of sealed nickel-cadmium cells during voltage reversal

A mechanism which allows a cell voltage reversal in a nickel cadmium battery are discussed. The effects of reconditioning and the characteristics of Ni-Cd cells during voltage reversal at low overdischarge rates are outlined. Graphs are presented for: (1) hydrogen pressure decay-effect of state of charge (open circuit stand); (2) hydrogen pressure increase during overdischarge; (3) hydrogen pressure decay-effect of temperature (cells terminals connected through resistors); (4) cell, positive and negative electrode voltage during reversal when reconditioning a 13 cell-24-Ah battery pack through a 40 Omega resistor; (5) pressure discharge current and recombination current during voltage reversal when reconditioning a 13 cell-24-Ah battery pack through a 40 Omega resistor; (6) theoretical hydrogen gas pressure if there were no recombination; and (7) effect of hydrogen pressure on recombination rate during overcharge.

Ritterman, P. F.↗

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗

Time-domain simulation of the crab cavity/beam interaction

The Electron-Ion Collider (EIC) will employ crab cavities to maximize luminosity. A time-domain simulation is developed to study the interaction between the particle beam and the crab cavities in the EIC, including the Low-Level RF (LLRF) feedback loops. The simulation is validated through power and induced voltage estimates. We then use the simulation tool to study the beam loading effects on the crabbing voltage and thus on the beam transverse position and tilt. We also study the crabbing voltage regulation and transmitter power transients as a function of the LLRF design.

43 PARTICLE ACCELERATORS↗

Reliable low-cost battery voltage indicator for light aircraft and automobiles

Voltage indicator fits into cigarette lighter socket and utilizes light emitting and Zener diodes to display three levels of battery voltage. Indicator is superior to typical conventional electrical system indicators in that it gives a positive discrete indication of battery voltage. It is simple, inexpensive, and rugged.

Miller, R. L.↗

Integration Assessment of Visiting Vehicle Induced Electrical Charging of the International Space Station Structure

The International Space Station (ISS) undergoes electrical charging in low Earth orbit (LEO) due to positively biased, exposed conductors on solar arrays that collect electrical charges from the space plasma. Exposed solar array conductors predominately collect negatively charged electrons and thus drive the metal ISS structure electrical ground to a negative floating potential (FP) relative to plasma. This FP is variable in location and time as a result of local ionospheric conditions. ISS motion through Earth s magnetic field creates an addition inductive voltage up to 20 positive and negative volts across ISS structure depending on its attitude and location in orbit. ISS Visiting Vehicles (VVs), such as the planned Orion crew exploration vehicle, contribute to the ISS plasma charging processes. Upon physical contact with ISS, the current collection properties of VVs combine with ISS. This is an ISS integration concern as FP must be controlled to minimize arcing of ISS surfaces and ensure proper management of extra vehicular activity crewman shock hazards. This report is an assessment of ISS induced charging from docked Orion vehicles employing negatively grounded, 130 volt class, UltraFlex (ATK Space Systems) solar arrays. To assess plasma electron current collection characteristics, Orion solar cell test coupons were constructed and subjected to plasma chamber current collection measurements. During these tests, coupon solar cells were biased between 0 and 120 V while immersed in a simulated LEO plasma. Tests were performed using several different simulated LEO plasma densities and temperatures. These data and associated theoretical scaling of plasma properties, were combined in a numerical model which was integrated into the Boeing Plasma Interaction Model. It was found that the solar array design for Orion will not affect the ISS FP by more than about 2 V during worst case charging conditions. This assessment also motivated a trade study to determine acceptable plasma electron current levels that can be collected by a single or combined fleet of ISS-docked VVs.

Kramer, Leonard↗

Three-Dimensional Magnetic Analysis Technique Developed for Evaluating Stirling Convertor Linear Alternators

The Department of Energy, the Stirling Technology Company (STC), and the NASA Glenn Research Center are developing Stirling convertors for Stirling radioisotope generators to provide electrical power for future NASA deep space missions. STC is developing the 55-We technology demonstration convertor (TDC) under contract to the Department of Energy. The Department of Energy recently named Lockheed Martin as the system integration contractor for the Stirling radioisotope generator development project. Lockheed Martin will develop the Stirling radioisotope generator engineering unit and has contract options to develop the qualification unit and the first flight unit. Glenn s role includes an in-house project to provide convertor, component, and materials testing and evaluation in support of the overall power system development. As a part of this work, Glenn has established an in-house Stirling research laboratory for testing, analyzing, and evaluating Stirling machines. STC has built four 55-We convertors for NASA, and these are being tested at Glenn. A cross-sectional view of the 55-We TDC is shown in the figure. Of critical importance to the successful development of the Stirling convertor for space power applications is the development of a lightweight and highly efficient linear alternator. In support, Glenn has been developing finite element analysis and finite element method tools for performing various linear alternator thermal and electromagnetic analyses and evaluating design configurations. A three-dimensional magnetostatic finite element model of STC's 55-We TDC linear alternator was developed to evaluate the demagnetization fields affecting the alternator magnets. Since the actual linear alternator hardware is symmetric to the quarter section about the axis of motion, only a quarter section of the alternator was modeled. The components modeled included the mover laminations, the neodymium-iron-boron magnets, the stator laminations, and the copper coils. The three-dimensional magnetostatic model was then coupled with a circuit simulator model of the alternator load and convertor controller. The coupled model was then used to generate alternator terminal voltage and current predictions. The predicted voltage and current waveforms agreed well with the experimental data, which tended to validate the accuracy of the coupled model. The model was then used to generate predictions of the demagnetization fields acting on the alternator magnets for the alternator under load. The preliminary model predictions indicate that the highest potential for demagnetization is along the inside surface of the uncovered magnets. The demagnetization field for the uncovered magnets when the mover is positioned at the end of a stroke is higher than it is when the mover is at the position of maximum induced voltage or maximum alternator current. Assuming normal load conditions, the model predicted that the onset of demagnetization is most likely to occur for magnet temperatures above 101 C.

Geng, Steven M.↗

Effect of anode-cathode geometry on performance of the HIP-1 hot ion plasma

Hot-ion hydrogen plasma experiments were conducted in the NASA Lewis HIP-1 magnetic mirror facility to determine how the ion temperature was influenced by the axial position of the cathode tips relative to the anodes. A steady-state EXB plasma was formed by applying a strong radially inward dc electric field near the throats of the magnetic mirrors. The dc electric field was created between hollow cathode rods inside hollow anode cylinders, both concentric with the magnetic axis. The highest ion temperatures, 900 eV, were attained when the tip of each cathode was in the same plane as the end of its anode. These temperatures were reached with 22 kV applied to the electrodes in a field of 1.1 tesla. Scaling relations were empirically determined for ion temperature and the product of ion density and neutral particle density as a function of cathode voltage, discharge current, and electrode positions. Plasma discharge current vs voltage (I-V) characteristics were determined.

Lauver, M. R.↗

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC-NDR material and comparing it with LaCoO 3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

active reactance↗

Detection of a multi–disease biomarker in saliva with graphene field effect transistors

Human carbonic anhydrase 1 (CA1) has been suggested as a biomarker for identification of several diseases including cancers, pancreatitis, diabetes, and Sjogren’s syndrome. However, the lack of a rapid, cheap, accurate, and easy-to-use quantification technique has prevented widespread utilization of CA1 for practical clinical applications. To this end, we present a label-free electronic biosensor for detection of CA1 utilizing highly sensitive graphene field effect transistors (G-FETs) as a transducer and specific RNA aptamers as a probe. The binding of CA1 with aptamers resulted in a positive shift in Dirac voltage V D of the G-FETs, the magnitude of which depended on target concentration. These aptameric G-FET biosensors showed the binding affinity (K D ) of ~2.3 ng/ml (70 pM), which is four orders lower than that reported using a gel shift assay. This lower value of K D enabled us to achieve a detection range (10 pg/ml - 100 ng/ml) which is well in line with the clinically relevant range. These highly sensitive devices allowed us to further prove their clinical relevance by successfully detecting the presence of CA1 in human saliva samples. In conclusion, the utilization of this label-free biosensor could facilitate the early stage identification of various diseases associated with changes in concentration of CAs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Quantifying optical loss of high-voltage degradation modes in photovoltaic modules using spectral analysis

The direct current bias for photovoltaic (PV) modules interconnected in series-strings may include both high voltage negative (“HV-”) and positive (“HV+”) polarity with respect to the electrical ground. Multiple degradation modes, resulting in quantifiable optical loss, were found to occur during HV-/HV+ sequential stress, including corrosion of the external glass surface, encapsulant delamination (at its interfaces with the glass and the PV cell), internal haze formation (resulting from a chemical interaction between the glass and the encapsulant), corrosion and migration of the gridlines, and corrosion of the silicon nitride (Si x N y ) antireflective coating on the cell. The effects of these separate modes were examined using monolithic (e.g., glass or PV cell) and laminated-coupon (glass/encapsulant/glass or glass/encapsulant/cell/encapsulant/backsheet) specimens. Characterizations during and after unbiased accelerated testing at 85°C/85% relative humidity included spectrophotometry, optical microscopy, electron microscopy, and ellipsometry. For some module components (i.e., the glass and the Si x N y coating), the optical performance was determined through iterative analysis of empirical measurements. Concentrating on just their spectral effect, a novel model was then developed to estimate the transfer of light to the PV cell and the return of light from the PV module with simultaneous degradation mechanisms, which was compared with a mini-module previously subjected to HV-/HV+ stress. Here the model suggests that one third of the current loss observed for the mini-module can be attributed to the optical degradation of the packaging materials. The dominant degradation modes include encapsulant delamination and corrosion of the Si x N y coating. Recommendations are given so that the optical model may be improved relative to accelerated testing and validated relative to field aging.

14 SOLAR ENERGY↗

Effect of net direct current on the properties of radio frequency sheaths: simulation and cross-code comparison

In order to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, computational tools which can model radio frequency (RF) sheaths are needed. In particular, models for the effective surface impedance and DC rectified sheath potentials may be coupled with full wave RF simulation codes to predict self-consistent wave fields near surfaces and the resulting power dissipation and plasma-material interactions from ion sputtering. In this study, previous work assuming zero net DC current flow through the sheath is generalized to allow the surface to collect net positive or negative current, as is often observed in experiments. The waveforms, DC potential and RF admittance are investigated by means of analytical theory, nonlinear fluid and particle-in-cell (PIC) codes. Cross-code comparisons provide detailed model verification and elucidate the roles of ion and electron kinetics. When the sheath draws negative (positive) DC current, the voltage rectification is reduced (increased) compared with the zero-current case, and the magnitude of both the real and imaginary parts of the admittance are increased (reduced). In conclusion, a previous four-input parametrization of the sheath rectification and admittance properties is generalized to include a fifth parameter describing the DC sheath current.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Observation of Zero-Field Transverse Resistance in AlO x / SrTi O 3 Interface Devices

Domain walls in AlO x =SrTiO 3 (AlO x =STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based heterostructures: a finite transverse resistance observed in Hall bars in zero external magnetic field. This transverse resistance depends on the local domain wall configuration and hence changes with temperature, gate voltage, thermal cycling, and position along the sample and can even change sign as a function of these parameters. The transverse resistance is observed below ≃70 K but grows and changes significantly below ≃40 K, the temperature at which the domain walls become increasingly polar. Surprisingly, the transverse resistance is much larger in (111) oriented heterostructures in comparison to (001) oriented heterostructures. Measurements of the capacitance between the conducting interface and an electrode applied to the substrate, which reflect the dielectric constant of the STO, indicate that this difference may be related to the greater variation of the temperature-dependent dielectric constant with electric field when the electric field is applied in the [111] direction. Further, the finite transverse resistance can be explained inhomogeneous current flow due to the preferential transport of current along domain walls that are askew to the nominal direction of the injected current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantifying Optical Loss of High-Voltage Degradation Modes in PV Modules Using Spectral Analysis [Slides]

The direct current bias for photovoltaic (PV) modules interconnected in series-strings may include both high voltage negative ("HV-") and positive ("HV+") polarity with respect to the electrical ground. Multiple degradation modes, resulting in quantifiable optical loss, were found to occur during HV-/HV+ sequential stress, including: corrosion of the external glass surface, encapsulant delamination (at its interfaces with the glass and the PV cell), internal haze formation (resulting from a chemical interaction between the glass and the encapsulant), corrosion and migration of the gridlines, and corrosion of the silicon nitride (SixNy) antireflective coating on the cell. The effects of these separate modes were examined using monolithic (e.g., glass or PV cell) and laminated-coupon (glass/encapsulant/glass or glass/encapsulant/cell/encapsulant/backsheet) specimens. Characterizations during and after unbiased accelerated testing at 85 degrees C/85% relative humidity included: spectrophotometry, optical microscopy, electron microscopy, and ellipsometry. For some module components (i.e., the glass and the SixNy coating), the optical performance was determined through iterative analysis of empirical measurements. Concentrating on just their spectral effect, a novel model was then developed to estimate the transfer of light to the PV cell and the return of light from the PV module with simultaneous degradation mechanisms, which was compared to a mini-module previously subjected to HV-/HV+ stress. The model suggests one-third of the current loss observed for the mini-module can be attributed to the optical degradation of the packaging materials. The dominant degradation modes include encapsulant delamination and corrosion of the SixNy coating. Recommendations are given so that the optical model may be improved relative to accelerated testing and validated relative to field aging.

14 SOLAR ENERGY↗

Trisphere spark gap actuates overvoltage relay

Trisphere spark gap and high voltage relay provides a positive, fast response, high current capacity device that will sense an overvoltage condition and remove power from the circuit before insulation breakdown. When an overvoltage occurs, the spark gap breaks down and conducts an actuating current to the relay which removes power from the circuit.

Camacho, S. L.↗

Electronic integrator for gyro rate output voltages

Circuit which integrates spacecraft gyro output voltages to provide analog position signals has been developed. Accurate integration is provided by all solid state system which uses no choppers and takes advantage of commercially available flight qualified components.

Crawford, R. A.↗