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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Response of AC-coupled Low Gain Avalanche Detectors to Ionizing and Non-ionizing Radiation Damage

Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage current and depletion voltages of the active volumes.

FOS: Physical sciences↗
NASA NTRS1967

Improved frequency divider employs transistor avalanche effect

New frequency divider circuit can be synchronized over a wider input control frequency range, has greater phase stability, and is less sensitive to temperature changes than conventional synchronized oscillators. The new circuit uses the avalanche breakdown mode of operation of transistors.

Johns, C. E.↗
NASA NTRS1971

Noise in avalanche transit-time devices.

A survey of work performed on noise in avalanche transit-time devices is presented. Both theoretical and experimental results on noise mechanisms and performance of these devices, when they are employed as oscillators, amplifiers, and self-oscillating mixers, are reviewed. Several unexplained experimental results and points of disagreement between the experimental work results of various workers are identified. Suggestions for further studies are offered.

Gupta, M.↗
NASA NTRS1975

Application of LANDSAT data to delimitation of avalanche hazards in Montane Colorado

The author has identified the following significant results. Interpretation of small scale LANDSAT imagery provides a means for determining the general location and distribution of avalanche paths. The accuracy and completeness of small scale mapping is less than is obtained from the interpretation of large scale color infrared photos. Interpretation of enlargement prints (18X) of LANDSAT imagery is superior to small scale imagery, because more detailed information can be extracted and annotated.

Knepper, D. H.↗
NASA NTRS1975

A 1.06 micrometer avalanche photodiode receiver

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

Eden, R. C.↗
NASA NTRS1975

The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

Eden, R. C.↗
NASA NTRS1979

First principles numerical model of avalanche-induced arc discharges in electron-irradiated dielectrics

The model consists of four phases: single electron dynamics, single electron avalanche, negative streamer development, and tree formation. Numerical algorithms and computer code implementations are presented for the first three phases. An approach to developing a code description of fourth phase is discussed. Numerical results are presented for a crude material model of Teflon.

Beers, B. L.↗
NASA NTRS1979

State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

Law, H. D.↗
NASA NTRS1985

Photon Detection with Cooled Avalanche Photodiodes: Theory and Preliminary Experimental Results

Avalanche photodiodes (APDs) can be operated in a geiger-tube mode so that they can respond to single electron events and thus be used as photon counting detectors. Operational characteristics and theory of APDs while used in this mode are analyzed and assessed. Preliminary experimental investigation of several commercially available APDs has commenced, and initial results for dark count statistics are presented.

Robinson, D. L.↗
NASA NTRS1987

Effect of atmospheric turbulence on the bit error probability of a space to ground near infrared laser communications link using binary pulse position modulation and an avalanche photodiode detector

The effect of atmospheric turbulence on the bit error rate of a space-to-ground near infrared laser communications link is investigated, for a link using binary pulse position modulation and an avalanche photodiode detector. Formulas are presented for the mean and variance of the bit error rate as a function of signal strength. Because these formulas require numerical integration, they are of limited practical use. Approximate formulas are derived which are easy to compute and sufficiently accurate for system feasibility studies, as shown by numerical comparison with the exact formulas. A very simple formula is derived for the bit error rate as a function of signal strength, which requires only the evaluation of an error function. It is shown by numerical calculations that, for realistic values of the system parameters, the increase in the bit error rate due to turbulence does not exceed about thirty percent for signal strengths of four hundred photons per bit or less. The increase in signal strength required to maintain an error rate of one in 10 million is about one or two tenths of a db.

Safren, H. G.↗
NASA NTRS1987

Photon detection with cooled avalanche photodiodes

Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

Robinson, D. L.↗
NASA NTRS1987

Cooled avalanche photodiode used for photon detection

Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5 to 3 times more sensitive than presently-available photomultiplier tubes (PPMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than 25 percent were obtained with detector noise levels comparable to the noise of a PMT; higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

Robinson, Deborah L.↗
NASA NTRS1988

Application of PN and avalanche silicon photodiodes to low-level optical

New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

Eppeldauer, G.↗