Design analysis - unified S-band system for Apollo network, volume 1, parts I and II ENGINEERING report
Design analyses of physical and performance characteristics of unified Apollo S-band subsystems
S-BAND↗
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Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Engineering Test Report: Radiated Emissions and SARR, SARP, DCS Receivers, Link Frequencies EMI Sensitive Band Test Results, AMSU-A1, S/N 109
This is the Engineering Test Report, Radiated Emissions and SARR, SARP, DCS Receivers, Link Frequencies EMI Sensitive Band Test Results, AMSU-A1, S/N 109, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A).
Valdez, A.↗
Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Engineering Test Report: Radiated Emissions and SARR, SARP, DCS Receivers, Link Frequencies EMI Sensitive Band Test Results, AMSU-A1, S/N 108 2
This is the Engineering Test Report, Radiated Emissions and SARR, SARP, DCS Receivers, Link Frequencies EMI Sensitive Band Test Results, AMSU-A1 SIN 108, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A).
Valdez, A.↗
Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Engineering Test Report: Radiated Emissions and SARR, SARP, DCS Receivers, Link Frequencies EMI Sensitive Band Test Results, AMSU-A2, S/N 108, 08
This is the Engineering Test Report, Radiated Emissions and SARR, SARP, DCS Receivers, Link Frequencies EMI Sensitive Band Test Results, AMSU-A2, S/N 108, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A).
Valdez, A.↗
Engineering evaluations and studies. Report for Ku-band studies, exhibit A
System performance aspects of the Ku band radar communication hardware and investigations into the Ku band/payload interfaces are discussed. The communications track problem caused by the excessive signal dynamic range at the servo input was investigated. The management/handover logic is discussed and a simplified description of the transmitter enable logic function is presented. Output noise produced by a voltage-controlled oscillator chip used in the SPA return-link channel 3 mid-bit detector is discussed. The deployed assembly (DA) and EA-2 critical design review data are evaluated. Cross coupling effects on antenna servo stability were examined. A series of meetings on the acceptance test specification for the deployed assembly is summarized.
Dodds, J. G.↗
Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga 2 O 3 with neutron irradiation and forming gas anneals
The gallium vacancy is one of the dominant native point defects in β-Ga 2 O 3 , one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga 2 O 3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga 2 O 3 .
42 ENGINEERING↗
X-33 XRS-2200 Linear Aerospike Engine Sea Level Plume Radiation
Wide band plume radiation data were collected during ten sea level tests of a single XRS-2200 engine at the NASA Stennis Space Center in 1999 and 2000. The XRS-2200 is a liquid hydrogen/liquid oxygen fueled, gas generator cycle linear aerospike engine which develops 204,420 lbf thrust at sea level. Instrumentation consisted of six hemispherical radiometers and one narrow view radiometer. Test conditions varied from 100% to 57% power level (PL) and 6.0 to 4.5 oxidizer to fuel (O/F) ratio. Measured radiation rates generally increased with engine chamber pressure and mixture ratio. One hundred percent power level radiation data were compared to predictions made with the FDNS and GASRAD codes. Predicted levels ranged from 42% over to 7% under average test values.
DAgostino, Mark G.↗
Enhanced thermoelectric performance of SnSe by controlled vacancy population
Abstract The thermoelectric performance of SnSe strongly depends on its low-energy electron band structure that provides high density of states in a narrow energy window due to the multi-valley valence band maximum (VBM). Angle-resolved photoemission spectroscopy measurements, in conjunction with first-principles calculations, reveal that the binding energy of the VBM of SnSe is tuned by the population of Sn vacancy, which is determined by the cooling rate during the sample growth. The VBM shift follows precisely the behavior of the thermoelectric power factor, while the effective mass is barely modified upon changing the population of Sn vacancies. These findings indicate that the low-energy electron band structure is closely correlated with the high thermoelectric performance of hole-doped SnSe, providing a viable route toward engineering the intrinsic defect-induced thermoelectric performance via the sample growth condition without an additional ex-situ process. Graphical Abstract
77 NANOSCIENCE AND NANOTECHNOLOGY↗
First Principle Investigation of Electronic, Transport, and Bulk Properties of Zinc-Blende Magnesium Sulfide
We have studied electronic, structural, and transport properties of zinc-blende magnesium sulfide (zb-MgS). We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) method. Our computational method is able to reach the ground state of a material, as dictated by the second theorem of density functional theory (DFT). Consequently, our findings have the physical content of DFT and agree with available, corresponding experimental ones. The calculated band gap of zb-MgS, a direct gap equal to 4.43 eV, obtained at the experimental lattice constant of 5.620 Å, completely agrees with the experimental band gap of 4.45 ± 0.2 eV. We also report total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated pDOS also agree with the experiment for the description of the states at the top and the bottom of the valence and conduction bands, respectively.
42 ENGINEERING↗
Quantum Geometric Oscillations in Two-Dimensional Flat-Band Solids
Two-dimensional van der Waals heterostructures can be engineered into artificial superlattices that host flat bands with significant Berry curvature and provide a favorable environment for the emergence of novel electron dynamics. In particular, the Berry curvature can induce an oscillating trajectory of an electron wave packet transverse to an applied static electric field. Though analogous to Bloch oscillations, this novel oscillatory behavior is driven entirely by quantum geometry in momentum space instead of band dispersion. While the current from Bloch oscillations can be localized by increasing field strength, the current from the geometric orbits saturates to a nonzero plateau in the strong-field limit. Finally, in nonmagnetic materials, the geometric oscillations are even under inversion of the applied field, whereas the Bloch oscillations are odd, a property that can be used to distinguish these two coexisting effects.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons
Substitutional heteroatom doping of bottom-up engineered 1D graphene nanoribbons (GNRs) is a versatile tool for realizing low-dimensional functional materials for nanoelectronics and sensing. Previous efforts have largely relied on replacing C–H groups lining the edges of GNRs with trigonal planar N atoms. This type of atomically precise doping, however, only results in a modest realignment of the valence band (VB) and conduction band (CB) energies. Here, we report the design, bottom-up synthesis, and spectroscopic characterization of nitrogen core-doped 5-atom-wide armchair GNRs (N2-5-AGNRs) that yield much greater energy-level shifting of the GNR electronic structure. Here, the substitution of C atoms with N atoms along the backbone of the GNR introduces a single surplus π-electron per dopant that populates the electronic states associated with previously unoccupied bands. First-principles DFT-LDA calculations confirm that a sizable shift in Fermi energy (∼1.0 eV) is accompanied by a broad reconfiguration of the band structure, including the opening of a new band gap and the transition from a direct to an indirect semiconducting band gap. Scanning tunneling spectroscopy (STS) lift-off charge transport experiments corroborate the theoretical results and reveal the relationship among substitutional heteroatom doping, Fermi-level shifting, electronic band structure, and topological engineering for this new N-doped GNR.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Giant self-driven exciton-Floquet signatures in time-resolved photoemission spectroscopy of MoS 2 from time-dependent GW approach
Time-resolved, angle-resolved photoemission spectroscopy (TR-ARPES) is a one-particle spectroscopic technique that can probe excitons (two-particle excitations) in momentum space. We present an ab initio, time-domain GW approach to TR-ARPES and apply it to monolayer MoS 2 . We show that photoexcited excitons may be measured and quantified as satellite bands and lead to the renormalization of the quasiparticle bands. These features are explained in terms of an exciton-Floquet phenomenon induced by an exciton time–dependent bosonic field, which are orders of magnitude stronger than those of laser field–induced Floquet bands in low-dimensional semiconductors. Our findings imply a way to engineer Floquet matter through the coherent oscillation of excitons and open the new door for mechanisms for band structure engineering.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Engineering evaluations and studies. Volume 1: Exhibit A
Orbiter inertial upper-stage studies, ku-band hardware studies, S-band hardware investigations, shuttle/Centaur communication system engineering investigations are provided.
Cheng, U.↗
Thematic Mapper Data Quality and Performance Assessment in Renewable Resources/agriculture Remote Sensing
It is believed that the increased spatial resolution will provide solutions to proportion estimation error due to mixed pixels, and the increased spectral resolution will provide for the identification of important agricultural features such as crop stage, and condition. The results of analyses conducted relative to these hypothesis from sample segments extracted from the 4-band Detroit scene and the 7-band Mississippi County, Arkansas engineering test scene are described. Several studies were conducted to evaluate the geometric and radiometric performance of the TM to determine data viability for the more pertinent investigations of TM utility. In most cases this requirement was more than sufficiently satisfied. This allowed the opportunity to take advantage of detailed ground observations for several of the sample segments to assess class separability and detection of other important features with TM. The results presented regarding these TM characteristics show that not only is the increased definition of the within scene variance captured by the increased spatial and spectral resolution, but that the mid-IR bands (5 and 7) are necessary for optimum crop type classification. Both qualitative and quantitative results are presented that describe the improvements gained with the TM both relative to the MSS and on its own merit.
Bizzell, R. M.↗
Tuning Interface Electronic Properties via Chiral Two‐Dimensional Metal‐Organic Frameworks
Control over structural symmetries in nanomaterials offers a powerful approach to engineer electronic properties. For instance, breaking of mirror symmetries in two-dimensional (2D) materials with a hexagonal lattice can lead to nontrivial electronic topologies and correlated-electron phenomena. Yet, the impact of structural chirality on the electronic properties of 2D materials and interfaces remains underexplored. Here, how chiral phases of a 2D metal-organic framework (MOF) with a hexagonal lattice—consisting of hexaazatriphenylene molecules coordinated to Cu atoms—scatter, confine, and perturb the Shockley surface state (SS) electrons of an underlying Ag(111) substrate is investigated. Via low-temperature scanning tunneling microscopy and spectroscopy, noncontact atomic force microscopy, and numerical calculations based on an electronic plane-wave expansion method, modifications of the Ag(111) SS band structure are shown and quantified, including gap openings and lifts of band degeneracies, driven exclusively by the structural chirality of the 2D MOF phases. These findings highlight how structural symmetries, in particular chirality, affect electronic states at material interfaces, expanding on the toolkit for designing 2D materials with tailored electronic properties.
band structure engineering↗
Engineering Directionality in Quantum Dot Shell Lasing Using Plasmonic Lattices
In this paper, we report how the direction of quantum dot (QD) lasing can be engineered by exploiting high-symmetry points in plasmonic nanoparticle (NP) lattices. The nanolaser architecture consists of CdSe-CdS core-shell QD layers conformally coated on two-dimensional square arrays of Ag NPs. Using waveguide-surface lattice resonances (W-SLRs) near the Δ point in the Brillouin zone as optical feedback, we achieved lasing from the gain in CdS shells at off-normal emission angles. Changing the periodicity of the plasmonic lattices enables other high-symmetry points (Γ or M) of the lattice to overlap with the QD shell emission, which facilitates tuning of the lasing direction. We also increased the thickness of the QD layer to introduce higher order W-SLR modes with additional avoided crossings in the band structure, which expands the selection of cavity modes for any desired lasing emission angle.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Simulation of emergent compaction banding fronts caused by frictional boundaries
This study examines the role of boundary friction in promoting heterogeneous compaction in soft rock specimens loaded at high confining pressure outside the domain of compaction localisation. An elastoplastic constitutive model characterised by tunable hardening/softening behaviour is used to conduct the analyses. Finite-element simulations suggest that material instability is a non-necessary condition for the emergence of compaction fronts. Such fronts propagated as a result of a severe deviation in the local responses induced by frictional constraints. Overall, these findings suggest that boundary effects can bias the assessment of the extent of the compaction localisation domain. Experimental countermeasures and informed model calibration procedures are therefore necessary to minimise such bias and enable more accurate predictions of soft rock compaction.
42 ENGINEERING↗
Design of InGaN-ZnSnGa 2 N 4 quantum wells for high-efficiency amber light emitting diodes
A novel type-II InGaN-ZnSnGa 2 N 4 quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN 2 -GaN alloys and the determination of their band offsets with GaN. The simulation results indicate that this structure is promising as the active region for high-efficiency InGaN-based amber (λ ~ 590 nm) light-emitting diodes (LEDs). The hole wavefunction in the valence band is better confined with the insertion of a monolayer scale of ZnSnGa 2 N 4 into the InGaN QW while the electron wavefunction in the conduction band is better confined with the incorporation of an AlGaN layer in the GaN quantum barrier. The band structure of the InGaN-ZnSnGa 2 N 4 QW is numerically simulated based on the experimentally measured band offsets between ZnSnGa 2 N 4 and GaN. With the InGaN-ZnSnGa 2 N 4 QW design, a low In content (20%) is required in the InGaN layer to reach a peak emission wavelength of ~590 nm, yet an In composition of 25% is needed to reach the same emission wavelength for a conventional InGaN QW with the same layer thicknesses. Moreover, the electron-hole wavefunction overlap (Гe1-hh1) for the InGaN-ZnSnGa 2 N 4 QW design reaches 18% for an emission wavelength at ~590 nm. This result is much improved over the conventional InGaN QW overlap of 5% emitting at the same wavelength. The increase in electron-hole wavefunction overlap results in an approximately 14 times enhancement in the predicted spontaneous emission radiative recombination rate of the InGaN-ZnSnGa 2 N 4 QW as compared to that of the conventional InGaN QW. This InGaN-ZnSnGa 2 N 4 QW structure design can be promising to pave a new way to achieve high efficiency amber LEDs.
42 ENGINEERING↗