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Minority carrier trapping centers introduced by irradiation of n-type germanium analyzed, particularly effect of donor species on production, recovery and annealing of defects
Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.
Here, four types of stacking fault formation mechanisms are identified and discussed for early stage PVT growth of 4H-SiC crystals: Type 1: Shockley / double Shockley stacking fault formation inside the facet; Type 2: Stacking fault formation via 2D nucleation; Type 3: Frank + Shockley (S) stacking fault formation due to deflection of threading mixed dislocation (TMD) by macrosteps; Type 4: “Carrot” defect formation related to overgrowth of the terrace formed by separation of 3c/4 and c/4 step risers after deflection of a TMD by vicinal steps. The results help further reduction of defect generation in 4H-SiC substrates.
This paper presents the results of a program investigating the effects of initial defects on the fatigue and fracture response of composite laminates. The structural laminates investigated were a typical angle-ply laminate, a polar/hoop-wound pressure vessel laminate, and a typical engine fan blade laminate. Defects investigated were full- and half-penetration circular holes, full- and half-penetration slits, and countersink holes. Results are presented showing the effects of the defect size and type on the static fracture strength, fatigue performance, and residual static strength. The results of inspection procedures are shown, describing the effect of cyclic and static loadings on damage propagation in composite laminates. The data in this study were used to define proof test levels as a qualification procedure in composite structure subjected to cyclic loading.
The effects of initial defects on the fatigue and fracture response of graphite-epoxy composite laminates are presented. The structural laminates investigated were a typical angle ply laminate, a polar/hoop wound pressure vessel laminate, and a typical engine fan blade laminate. Defects investigated were full and half penetration circular holes, full and half penetration slits, and countersink holes. The effects of the defect size and type on the static fracture strength, fatigue performance, and residual static strength are shown as well as the results of loadings on damage propagation in composite laminates. The data obtained were used to define proof test levels as a qualification procedure in composite structure subjected to cyclic loading.
The effects of moisture and temperature on the fatigue and fracture response of composite laminates under compression loads were investigated. The structural laminates studied were an intermediate stiffness graphite-epoxy composite (a typical angle ply laimna liminate had a typical fan blade laminate). Full and half penetration slits and impact delaminations were the defects examined. Results are presented which show the effects of moisture on the fracture and fatigue strength at room temperature, 394 K (250 F), and 422 K (300 F). Static tests results show the effects of defect size and type on the compression-fracture strength under moisture and thermal environments. The cyclic tests results compare the fatigue lives and residual compression strength under compression only and under tension-compression fatigue loading.
Simulation calculations are conducted for Si substrates to analyze formation and diffusion energies of interstitials under strain condition using statics methods .based on a Stillinger-Weber type potential function. Defects in the vicinity of the surface region and in the bulk are examined, and the role played by compressive and tensile strains on the energetics of interstitials is investigated. Results indicate that strain alters defect energetics which, in turn, modifies their diffusion characteristics.
Three nondestructive evaluation methods are being developed to identify defects in the foam thermal protection system (TPS) of the Space Shuttle External Tank (ET). Shearography is being developed to identify shallow delaminations, shallow voids and crush damage in the foam while terahertz imaging and backscatter radiography are being developed to identify voids and cracks in thick foam regions. The basic theory of operation along with factors affecting the results of these methods will be described. Also, the evolution of these methods from lab tools to implementation on the ET will be discussed. Results from both test panels and flight tank inspections will be provided to show the range in defect sizes and types that can be readily detected.
The foam thermal protection system (TPS) of the space shuttle External Tank (ET) has provided some unique challenges to the nondestructive testing community. Three nondestructive evaluation methods have been developed to identify defects in the foam TPS of the ET. Terahertz imaging and backscatter radiography have been developed to identify voids in thick foam regions while shearography has been developed to identify shallow delaminations, shallow voids and crush damage in the foam. The basic theory of operation along with factors, determined from a series of designed experiments, affecting the results of these methods will be described. Results from both test panels and flight tank inspections will be provided, along with predicted probability of detection estimates to show the range in defect sizes and types that can be readily detected.
Ionizing radiation presents a major challenge to human exploration and long-term residence in space. The deep-space radiation spectrum includes highly energetic particles that generate double strand breaks (DSBs), deleterious DNA lesions that are usually repaired without errors via homologous recombination (HR), a conserved pathway in all eukaryotes. While progress identifying and characterizing biological radiation effects using Earth-based facilities has been significant, no terrestrial source duplicates the unique space radiation environment.We are developing a biosensor-based nanosatellite to fly aboard NASAs Space Launch System Exploration Mission 1, expected to launch in 2017 and reach a 1AU (astronomic unit) heliocentric orbit. Our biosensor (called BioSentinel) uses the yeast S. cerevisiae to measure DSBs in response to ambient space radiation. The BioSentinel strain contains engineered genetic defects that prevent growth until and unless a radiation-induced DSB near a reporter gene activates the yeasts HR repair mechanisms. Thus, culture growth and metabolic activity directly indicate a successful DSB-and-repair event. In parallel, HR-defective and wild type strains will provide survival data. Desiccated cells will be carried within independent culture microwells, built into 96-well microfluidic cards. Each microwell set will be activated by media addition at different time points over 18 months, and cell growth will be tracked continuously via optical density. One reserve set will be activated only in the occurrence of a solar particle event. Biological measurements will be compared to data provided by onboard physical dosimeters and to Earth-based experiments.BioSentinel will conduct the first study of biological response to space radiation outside Low Earth Orbit in over 40 years. BioSentinel will thus address strategic knowledge gaps related to the biological effects of space radiation and will provide an adaptable platform to perform human-relevant measurements in multiple space environments. We hope that it can therefore be used on the ISS, on and around other planetary bodies as well as other exploration platforms as a self-contained system that will allow us to compare and calibrate different radiation environments.BioSentinels results will be critical for improving interpretation of the effects of space radiation exposure, and for reducing the risk associated with long-term human exploration.
In friction stir welding (FSWing) the actual solid state joining takes place between the faying surfaces which form the weld seam. Thus the seam trace is often investigated for clues when the strength of the weld is reduced. Aluminum and its alloys are known to form a native, protective oxide on the surface. If these native surface oxides are not sufficiently broken up during the FSW process, they are reported to remain in the FSW interior and weaken the bond strength. This type of weld defect has been referred to as a lazy "S", lazy "Z", joint line defect, kissing bond, or residual oxide defect. Usually these defects are mitigated by modification of the process parameters, such as increased tool rotation rate, which causes a finer breakup of the native oxide particles. This study proposes that there may be an alternative mechanism for formation of oxides found within the weld nugget. As the oxidation rate increases at elevated temperatures above 400ºC, it may be possible for enhanced oxidation to occur on the interior surfaces during the FSW process from entrained air entering the seam gap. Normally, FSWs of aluminum alloys are made without a purge gas and it is unknown how process parameters and initial fit up could affect a potential air path into the interior during the processing. In addition, variations in FSW parameters, such as the tool rotation, are known to have a strong influence on the FSW temperature which may affect the oxidation rate if internal surfaces are exposed to entrained air. A series of FSWs were made in 3 different thickness panels of AA2219 (0.95, 1.27 and 1.56 cm) at 2 different weld pitches. As the thickness of the panels increased, there was an increased tendency for a gap to form in advance of the weld tool. If sufficient air is able to enter the workpiece gap prior to consolidation, the weld temperature can increase the oxidation rate on the interior surfaces. These oxidation rates would also be accelerated in areas of localized liquation. Metallographs from the weld panels showed indications of liquation at the grain boundaries. In FSWs of thicker panels, these regions of liquation were found to be heavily oxidized. The quality of the FSWs was evaluated from tensile testing at room temperature. As the panel thickness increased, a slight decrease in tensile strength was observed which was attributed to the presence of oxides. No oxide formation was observed in the thinner workpieces, although there were indications of localized liquation at the grain boundaries. Results from this study will assist in a better understand of the mechanisms of oxide formation in FSW interiors and provide methodology for minimizing their occurrence.
Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites is increased locally by orders of magnitude. Here, local acceptor and donor doping in Er(Mn,Ti)O3 is demonstrated, facilitated by the controlled splitting of anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, it is shown that the oxygen defects can readily be moved through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. These findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.
Literature review on kinetics of defect production and migration, and defects in diamond-type lattice, particularly silicon
Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.
Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.
Defects are ubiquitous in solids and strongly influence materials’ functional properties. However, non-destructive characterization and quantification of defects, especially when multiple types coexist, remain a long-standing challenge. Here, we introduce DefectNet, a foundation machine learning model that predicts the chemical identity and concentration of substitutional point defects with multiple coexisting elements directly from vibrational spectra, specifically phonon density-of-states (PDoS). Trained on over 16,000 simulated spectra from 2,000 semiconductors, DefectNet employs a tailored attention mechanism to identify up to six distinct defect elements at concentrations ranging from 0.2% to 25%. The model generalizes well to unseen crystals across 56 elements and can be fine-tuned on experimental data. Validation using inelastic scattering measurements of SiGe alloys and MgB 2 superconductor demonstrates its accuracy and transferability. Furthermore, our work establishes vibrational spectroscopy as a viable, non-destructive probe for bulk point defect quantification, and highlights the promise of foundation models in data-driven defect engineering.
Differential scanning calorimetry data for samples of a 52 year old plutonium alloy with 3.3 at. % Ga that were heated beyond the melting point is analyzed using transition state theory to find activation energies for the δ to ε and ε to liquid phase transitions. A Bayesian statistical method involving a Gaussian process model is used to find mean values and confidence intervals for the activation energies. The activation energy for the δ to ε phase transition increases by 3.3 ± 3.8% per decade, relative to the case when all age related plutonium lattice point defects have been removed through annealing. The corresponding increase in activation energy for the ε to liquid transition is shown to be 7.1 ± 1.8% per decade. It is postulated that the change in activation energy with age for both phase transitions is caused, in part, by the accumulation of the same type of lattice point defects associated with the observed increase in elastic bulk modulus over time.
Defect impurity relation in electron damaged p-type silicon and electron irradiation effect on float zone n-type silicon