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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗
NASA NTRS1990

Unexpected effects of a trap in CCD echelle spectra of B-type stars

Because of the nature of echelle spectra, cosmetic defects such as traps may mimic real spectral features. An example from spectra taken at CTIO with a GEC CCD is presented, and it is shown how the affected pixels can be eliminated from the reduced spectrum, at a slight cost in signal-to-noise ratio.

Morrison, Nancy D.↗
NASA NTRS1947

An Investigation of the Low-speed Stability and Control Characteristics of Swept-forward and Swept-back Wing in the Ames 40- by 80-foot Wind Tunnel

An investigation has been made at large scale of the characteristics of highly swept wings. Data were obtained at several angles of sideslip on wings having angles of sweep of plus or minus 45 degrees, plus or minus 30 degrees, and 0 degrees. The airfoil sections of the wings varied from approximately NACA 0015 at the root to NACA 23009 at the tip. Each wing was investigated with flaps under flection, partial-span split flaps deflected 60 degrees, full-span split flaps defected 60 degrees and split-flap-type ailerons deflected plus or minus 15 degrees. Values of maximum lift were obtained at Reynolds numbers raging from 5.7 to 9.2 times 10 to the 6th power. In this report the summarized results are compared with the predictions made by use of the simplified theory for the effect of sweep and with existing small-scale data. The basic wind-tunnel results from which these summary data were taken are included in an appendix. The primary problems accompanying the use of weep as revealed by this investigation are the loss in maximum lift, the high effective dihedral, and the sharp reduction in lateral-control effectiveness. In general, simple theory enables good predictions to be made of the gross effects of sweep but further refinements are necessary to obtain the accuracy required for design purposes. In cases where comparisons can be made, the indications are that, as sweep increases, scale effects diminish and large-scale results approach small-scale results.

Mccormack, Gerald M↗
NASA NTRSDate not supplied

Fast Assessment of Metal Performance through Dislocation Physics and Machine Learning

The microstructure of metals is key to their mechanical properties. The types, density, composition and morphology of crystal defects all have pronounced impact on the properties. Changes to the microstructure occurring during processing and use can be very striking. The emerging technology additive manufacturing (AM) has the potential to improve performance by allowing optimized designs, but the process and environments can lead to unusual microscale features whose properties must be understood and characterized to enable higher technological readiness levels and application. Experimentally, an extensive evaluation of mechanical properties of 3D printed metals is a challenge, and anomalous effects related to the AM process add complexity. We present a new machine learning (ML) model predicting mechanical response based on dislocation mediated plasticity simulations. A large set of 3D discrete dislocation dynamics simulations with wide ranges of loading conditions is transformed to preprocessed data ready for training with the ML model. The trained model can predict the mechanical response of Mo30W for a given microstructure evolution, providing key information essential for optimization of AM processing.

Jaehyun Cho↗
NASA NTRSDate not supplied

Fast Assessment of Metal Performance through Dislocation Physics and Machine Learning

The microstructure of metals is key to their mechanical properties. The types, density, composition and morphology of crystal defects all have pronounced impact on the properties. Changes to the microstructure occurring during processing and use can be very striking. The emerging technology additive manufacturing (AM) has the potential to improve performance by allowing optimized designs, but the process and environments can lead to unusual microscale features whose properties must be understood and characterized to enable higher technological readiness levels and application. Experimentally, an extensive evaluation of mechanical properties of 3D printed metals is a challenge, and anomalous effects related to the AM process add complexity. We present a new machine learning (ML) model predicting mechanical response based on dislocation mediated plasticity simulations. A large set of 3D discrete dislocation dynamics simulations with wide ranges of loading conditions is transformed to preprocessed data ready for training with the ML model. The trained model can predict the mechanical response of Mo30W for a given microstructure evolution, providing key information essential for optimization of AM processing.

Jaehyun Cho↗
NASA NTRS1979

Quantitative Analysis of Defects in Silicon

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Natesh, R.↗
NASA NTRS1985

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Lagowski, J.↗
NASA NTRS1972

Improving the efficiency of GaP LED's which emit green light

A study of techniques for preparing n-type material and junctions which yield the most consistent high diode efficiency values high lighted the role that Ga vacancies and/or associated defects play in reducing the green luminescent efficiency of n-type GaP. A useful method for obtaining good quality material was developed. It is shown that junction formation at high temperatures in a process where the n to p transition occurs without removing the substrate from the furnace yields devices superior to those obtained by diffusion or double epitaxy in the conventional manner previously used for GaP junction formation.

Ladany, I.↗
NASA NTRS2023

CST: A Tool for Optimizing the Efficiency and Effectiveness of Static-Code Analysis Tools

Static Code Analysis (SCA) is a vital component of NASA IV&V’s mission assurance for safety-critical software as it reduces the likelihood of software-induced hazards impacting mission success. Static Code Analysis achieves this by identifying hazards that may not have been otherwise detectable by typical code reviews or other testing. Using SCA tools, however, can be intimidating due to steep learning curves, especially considering tool performance and defect coverage varies greatly. Because of this variation amongst SCA tools, understanding which tools support certain defects and which do not, as well as understanding how to run an analysis based on steps that are unique to each tool, can be difficult to both new and experienced analysts alike. To mitigate this, the SCAWG or the IV&V Static Code Analysis Working Group, created the SCA Checker Taxonomy and Starting Point Profiles. The Checker Selection Tool (CST) incorporates these two SCAWG products into an interactive tool which allows the user to: select organized categories of defects they would like the SCA tools to discover, select default checkers depending on their mission type (e.g. flight), and configure multiple SCA tools at once. C/C++, Java, and Python defect checkers from four common SCA tools were utilized in this iteration of the CST. This iteration also includes the addition of training, SCA tool specific help, and taxonomy guide links, into its design to help users new to Static Code Analysis learn how to perform SCA more efficiently. The CST has been subject to beta testing by experienced static code analysts from the SCAWG to ensure a usable and accurate final product. The implications of the CST in the mission assurance of NASA safety-critical software are profound, as the CST can help identify and reduce false positives and false negatives, fundamentally improving overall SCA efficiency and accuracy.

static code analysis↗
NASA NTRS1981

A comprehensive analysis of the performance characteristics of the Mount Laguna solar photovoltaic installation

This paper represents the first comprehensive survey of the Mount Laguna Photovoltaic Installation. The novel techniques used for performing the field tests have been effective in locating and characterizing defective modules. A comparative analysis on the two types of modules used in the array indicates that they have significantly different failure rates, different distributions in degradational space and very different failure modes. A life cycle model is presented to explain a multimodal distribution observed for one module type. A statistical model is constructed and it is shown to be in good agreement with the field data.

Shumka, A.↗
NASA NTRS1990

Surface defects and chemistry on the SnO2(110) surface

A variety of ultrahigh vacuum (UHV) surface science techniques have been used to characterize the structural, electronic and chemical properties of SnO2(110), a model catalytic surface. Two types of surface oxygen vacancies have been identified, each associated with different band gap (defect) electronic states. Adsorption experiments show that the interaction of simple gases with this surface occurs primarily through these oxygen vacancies and can show site-specificity to only one of the two types of vacancies.

Cox, David F.↗
NASA NTRS1992

Simulation studies for surfaces and materials strength

The progress report for the period May 1, 1992 to October 31, 1992 is presented. During this period investigations were carried out in three areas. Binding energies and high energy binding sites were calculated for carbon atoms deposited on a (2 x 1) dimerized Si(100) surface. Structure- and energy-related properties of defects formed on relaxed diamond surfaces were investigated. Tersoff-type model functions for Si were employed to investigate the energetics of the following processes: (1) neutral monovacancy and divacancy formation and migration energies; (2) neutral bond-centered, site sharing, tetrahedral, and hexagonal self-interstitial formation and migration energies; and (3) the variation of these energies with distance from a bulk site of Frenkel defect formation and from (100) and (111) surfaces. Calculations are included in the appendices.

Halicioglu, Timur↗
NASA NTRS2005

Application of Hilbert-Huang Transform for Improved Defect Detection in Terahertz NDE of Shuttle Tiles

Terahertz NDE is being examined as a method to inspect the adhesive bond-line of Space Shuttle tiles for defects. Terahertz signals are generated and detected, using optical excitation of biased semiconductors with femtosecond laser pulses. Shuttle tile samples were manufactured with defects that included repair regions unbond regions, and other conditions that occur in Shuttle structures. These samples were inspected with a commercial terahertz NDE system that scanned a tile and generated a data set of RF signals. The signals were post processed to generate C-scan type images that are typically seen in ultrasonic NDE. To improve defect visualization the Hilbert-Huang Transform, a transform that decomposes a signal into oscillating components called intrinsic mode functions, was applied to test signals identified as being in and out of the defect regions and then on a complete data set. As expected with this transform, the results showed that the decomposed low-order modes correspond to signal noise while the high-order modes correspond to low frequency oscillations in the signal and mid-order modes correspond to local signal oscillations. The local oscillations compare well with various reflection interfaces and the defect locations in the original signal.

Anastasi, Robert F.↗
NASA NTRS1989

Radiation damage in scientific charge-coupled devices

Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.

Janesick, James↗
NASA NTRS1989

Reduced gravitropic sensitivity in roots of a starch-deficient mutant of Nicotiana sylvestris

Gravitropism was studied in seedlings of Nicotiana sylvestris Speg. et Comes wild-type (WT) and mutant NS 458 which has a defective plastid phosphoglucomutase (EC 2.7.5.1.). Starch was greatly reduced in NS 458 compared to the WT, but small amounts of starch were detected in rootcap columella cells in NS 458 by light and electron microscopy. The roots of WT are more sensitive to gravity than mutant NS 458 roots since: (1) in mutant roots, curvature was reduced and delayed in the time course of curvature; (2) curvature of mutant roots was 24-56% that of WT roots over the range of induction periods tested; (3) in intermittent-stimulation experiments, curvature of mutant roots was 37% or less than that of WT roots in all treatments tested. The perception time, determined by intermittent-stimulation experiments, was < or = 5 s for WT roots and 30-60 s for mutant roots. The growth rates for WT and NS 458 roots were essentially equal. These results and our previous results with WT and starchless mutant Arabidopsis roots (Kiss et al. 1989, Planta 177, 198-206) support the conclusions that a full complement of starch is necessary for full gravitropic sensitivity and that amyloplasts function in gravity perception. Since a presumed relatively small increase in plastid buoyant mass (N. sylvestris mutant versus Arabidopsis mutant) significantly improves the orientation of the N. sylvestris mutant roots, we suggest that plastids are the likeliest candidates to be triggering gravity perception in roots of both mutants.

Non-NASA Center↗
NASA NTRS2009

Measurement Variability of Vertical Scanning Interferometry Tool Used for Orbiter Window Defect Assessment

The ability to sufficiently measure orbiter window defects to allow for window recertification has been an ongoing challenge for the orbiter vehicle program. The recent Columbia accident has forced even tighter constraints on the criteria that must be met in order to recertify windows for flight. As a result, new techniques are being investigated to improve the reliability, accuracy and resolution of the defect detection process. The methodology devised in this work, which is based on the utilization of a vertical scanning interferometric (VSI) tool, shows great promise for meeting the ever increasing requirements for defect detection. This methodology has the potential of a 10-100 fold greater resolution of the true defect depth than can be obtained from the currently employed micrometer based methodology. An added benefit is that it also produces a digital elevation map of the defect, thereby providing information about the defect morphology which can be utilized to ascertain the type of debris that induced the damage. However, in order to successfully implement such a tool, a greater understanding of the resolution capability and measurement repeatability must be obtained. This work focused on assessing the variability of the VSI-based measurement methodology and revealed that the VSI measurement tool was more repeatable and more precise than the current micrometer based approach, even in situations where operator variation could affect the measurement. The analysis also showed that the VSI technique was relatively insensitive to the hardware and software settings employed, making the technique extremely robust and desirable

Padula, Santo, II↗
NASA NTRS2018

BioSentinel: Optimizing Growth Conditions for Improved Yeast Cell Viability After Long-Term Desiccation

NASA's BioSentinel mission is one of thirteen secondary payloads to be deployed on the Space Launch System Exploration Mission-1 (SLS EM-1). The BioSentinel nanosatellite will be sent into a heliocentric orbit beyond Low Earth Orbit (LEO), to study the effects of deep space radiation on the budding yeast, Saccharomyces cerevisiae. Ionizing radiation encountered in deep space can create damaging lesions in DNA, including double strand breaks (DSBs). Budding yeast is suitable as a biological model to study these effects, as it is eukaryotic, and can be desiccated for prolonged periods while retaining viability, thus serving as a robust analog for human cells. On the ground, yeast cells are grown in liquid medium, then loaded into the wells of microfluidic cards and air dried prior to integration into the payload. Once the spacecraft reaches its target heliocentric orbit, a mixture of growth medium and metabolic indicator dye will be pumped into the microwells at specific time points to rehydrate the cells and allow them to grow. A 3-color LED detection system will measure changes in growth and metabolism resulting from ionizing radiation exposure. BioSentinel contains a wild type control strain and a rad51 mutant that is defective for DNA damage repair. In this study, we will determine the optimal amount of time to grow diploid yeast cells in liquid culture before they are desiccated for space flight. After an extended time in stationary phase, they become more tolerant to desiccation due to stress caused by nitrogen starvation. However, excessive exposure can lead to loss of viability and to a heterogeneous cell population due to sporulation. Since viability loss during desiccation poses a risk to mission success, a stress preconditioning process during initial growth may increase long-term cell viability. To determine the growth period that improves desiccation tolerance but allows for retention of uniform radiation sensitivity, we will grow both strains in liquid medium for a varying number of days (4 to 7), desiccate the cells, and then observe changes to cell viability and ionizing radiation sensitivity over time. Supported by the Space Life Sciences Training Program at NASA Ames Research Center.

Cui, Kaixin↗