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The ADC model is a charge-collection model derived for simple p-n junction silicon diodes having a single reverse-biased p-n junction at one end and an ideal substrate contact at the other end. The present paper extends the model to include multiple junctions, and the goal is to estimate how collected charge is shared by the different junctions.
Microscopic understanding of limitations of semi-classical phenomenological model of emitter surface of thermionic energy converter
Mercury or cadmium seeding effects on performance of cesium plasma diodes, obtaining plasma electron temperature from mathematical model
A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.
We present a unified thermionic emission (TE) and thermionic-field emission (TFE) model for the ideal reverse-bias leakage current in Schottky junctions. The unified TE–TFE analytical model advances upon previous analytical TFE models by Murphy–Good and Padovani–Stratton, which are the two most widely adopted models by the community, in two major aspects: (i) the applicability of the TFE expression therein is extended to near-zero surface electric fields by an error-function correction, allowing for the calculation of the total current by a nontrivial sum of TE (over-the-barrier current) and TFE (below-the-barrier current) contributions; therefore, an accurate description of the TE-to-TFE transition region is captured analytically for the first time; (ii) image-force lowering is considered with much-simpler correction terms. Comparisons with the reference numerical model show that the unified TE–TFE model has excellent accuracy, as well as a 10 000× reduction in computation time. The unified model is further tested against experimental data from Schottky barrier diodes based on Si, 4H-SiC, GaN, and β-Ga 2 O 3 , revealing accurate extractions of barrier heights and correct descriptions of the ideal reverse leakage characteristics. With the extended applicable range, improved accuracy, and computational efficiency, the unified TE–TFE model is highly valuable for the design and analysis of devices based on Schottky junctions, as well as for potential integration in technology computer-aided design (TCAD) tools.
Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. Here, the resistivity of p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals was equal to ρ ≈ 400 Ω⋅cm and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity ρ=ρ(T) was equal to ΔE≈0.24 eV. The forbidden gap of p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals, found from the optical absorption spectra, was equal to E g =1.495 eV.
Some preliminary results on a mixer design which is suitable for integration with tapered slot antennas have been obtained and published. This mixer design was tested both in a 4 to 10 GHz model, and (slightly modified) at 94 GHz. The latter utilized the same Hewlett-Packard beam-lead diodes which were used as detector diodes in the linearly tapered slot antennas (LTSA) arrays. These diodes are the most rugged to be found, and generally survive well on the flexible Kapton substrates. The 4 to 10 GHz version of this mixer has less than 6 dB conversion loss over an octave bandwidth. It uses a slot ring in a balanced configuration, and requires the LO to be fed through a separate port. A different design for a mixer which may be integrated with an LTSA antenna element is discussed. This mixer was tested at 38 GHz with the same HP beam-lead diodes, and has less than 10 dB conversion loss. Further work on mixers has emphasized theoretical modeling, using a computer program, which takes into account the effect of excess noise of Schottky-barrier diodes for the first time. Calculated results agree quantitatively with measured results on millimeter wave mixers.
Broad-band CW amplification with Gunn diodes in waveguide circuits has been obtained, with power gains typically between 10 and 15 dB and half-power bandwidths of more than 1 GHz. It is found that amplifier performance can be modeled with fair accuracy using a rough characterization for the diode parameters.
This project has progressed several physics models in the EMPIRE plasma simulation code to achieve higher fidelity simulations of high-current diode operation in pulsed-power accelerators. In this report, we present details for the following major work products: (1) a set of verification problems covering all key processes involved in gap closure physics has been designed; this suite has facilitated feature vetting and overall model maturation, (2) a new EMPIRE exemplar has been developed: the Radiographic Integrated Test Stand 6 (RITS-6) diode, and (3) An exemplar for the Saturn accelerator exemplar was enabled by the models matured under this work to self-consistently simulate further into the diode pulse than previously possible (bipolar flow regime). These developments have lead to the highest confidence EMPIRE power flow predictions of the Saturn accelerator to date. Additionally, three modeling approaches for simulating electrode plasmas have been investigated. We report on these results and provide recommendations.
We report on simulation of single event burnout of low gain avalanche diodes during high voltage operation after irradiation. A model is described which can be used to estimate energy deposition needed for single event burnout and the dependence of burnout on thermal conductivity and thermal resistance to heat sinks.
A family of five static dc-to-square-wave inverters, each employing a square-loop magnetic core in conjunction with two switching transistors, is analyzed using piecewise-linear models for the nonlinear characteristics of the transistors, diodes, and saturable-core devices. Four of the inverters are analyzed in detail for the first time. These analyses show that, by proper choice of a frame of reference, each of the five quite differently appearing inverter circuits can be described by a common equivalent circuit. This equivalent circuit consists of a five-segment nonlinear resistor, a nonlinear saturable reactor, and a linear capacitor. Thus, by proper interpretation and identification of the parameters in the different circuits, the results of a detailed solution for one of the inverter circuits provide similar information and insight into the local and global behavior of each inverter in the family.
Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).
Creating long-duration, high-powered lasers, for satellites, that can withstand the type of optical misalignment and damage dished out by the unforgiving environment of space, is work that is unique to NASA. It is complicated, specific work, where each step forward is into uncharted territory. In the 1990s, as this technology was first being created, NASA gave free reign to a group of "laser jocks" to develop their own business model and supply the Space Agency with the technology it needed. It was still to be a part of NASA as a division of Goddard Space Flight Center, but would operate independently out of a remote office. The idea for this satellite laboratory was based on the Skunk Works concept at Lockheed Martin Corporation. Formerly known as the Lockheed Corporation, in 1943, the aerospace firm, realizing that the type of advanced research it needed done could not be performed within the confines of a larger company, allowed a group of researchers and engineers to essentially run their own microbusiness without the corporate oversight. The Skunk Works project, in Burbank, California, produced America s first jet fighter, the world s most successful spy plane (U-2), the first 3-times-the-speed-of-sound surveillance aircraft, and the F-117A Nighthawk Stealth Fighter. Boeing followed suit with its Phantom Works, an advanced research and development branch of the company that operates independent of the larger unit and is responsible for a great deal of its most cutting-edge research. NASA s version of this advanced business model was the Space Lidar Technology Center (SLTC), just south of Goddard, in College Park, Maryland. Established in 1998 under a Cooperative Agreement between Goddard and the University of Maryland s A. James Clark School of Engineering, it was a high-tech laser shop where a small group of specialists, never more than 20 employees, worked all hours of the day and night to create the cutting- edge technology the Agency required of them. Drs. Robert Afzal and Joseph Dallas were directors of the SLTC, and led the development and production of active spaceborne, remote-sensing, optical instruments. As a pioneer in the area of photonics, Dr. Dallas led basic research, development, and production of semiconductor laser diode products, improving coupling efficiency through novel physical optics modeling and intracavity phase-correction techniques. He worked for NASA for 15 years, 11 of which were as a civil servant, and 4 of which were as a contractor.
The 2020 edition of a report which models the current state of the U.S. general-lighting market and provides analysis on realized and potential energy- and money-saving benefits associated with LED lamps and luminaires.
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Flight quality solid-state lasers require a unique and extensive set of testing and qualification processes, both at the system and component levels to insure the laser's promised performance. As important as the overall laser transmitter design is, the quality and performance of individual subassemblies, optics, and electro-optics dictate the final laser unit's quality. The Global Ecosystem Dynamics Investigation (GEDI) laser transmitters employ all the usual components typical for a diode-pumped, solid-state laser, yet must each go through their own individual process of specification, modeling, performance demonstration, inspection, and destructive testing. These qualification processes and results for the laser crystals, laser diode arrays, electro-optics, and optics, will be reviewed as well as the relevant critical issues encountered, prior to their installation in the GEDI flight laser units.
The Space Telescope, which carries four Digicons, will pass several times per day through a low-altitude portion of the radiation belt called the South Atlantic Anomaly. This is expected to create interference in what is otherwise anticipated to be a noise-free device. Two essential components of the Digicon, the semiconductor diode array and the UV transmitting window, generate noise when subjected to medium-energy proton radiation, a primary component of the belt. These trapped protons, having energies ranging from 2 to 400 Mev and fluences at the Digicon up to 4,000 P+/sec-sq cm, pass through both the window and the diode array, depositing energy in each. In order to evaluate the effect of these protons, engineering test models of Digicon tubes to be flown on the High Resolution Spectrograph were irradiated with low-flux monoenergetic proton beams at the University of Maryland cyclotron. Electron-hole pairs produced by the protons passing through the diodes or the surrounding bulk caused a background count rate. This is the result of holes diffusing over a distance of many diode spacings, causing counts to be triggered simultaneously in the output circuits of several adjacent diodes. Pulse-height spectra of these proton-induced counts indicate that most of the bulk-related counts overlap the single photoelectron peak. A geometrical model will be presented of the charge collection characteristics of the diode array that accounts for most of the observed effects.
A genetic algorithm is used for design of infrared filters and in the understanding of the material structure of a resonant tunneling diode. These two components are examples of microdevices and nanodevices that can be numerically simulated using fundamental mathematical and physical models.