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High temperature heat treatment effects on Mo, W, Ta and Re crystal surface order and faceting observed by electron diffraction, noting contamination role
Low energy electron diffraction structures due to Re crystal surface interaction with CO and molecular oxygen at high temperatures
Fcc metals surface changes following adhesion using low energy electron diffraction /LEED/, relating intersurface metal transfer to applied adhesive force
Low energy electron diffraction pattern from surface steps and facets resulting from recrystallization of Re single crystal
RF-sputtered CdS thin films structural and electrical characteristics from X ray diffractometer tracings, reflection electron diffraction and X ray double crystal spectrometry
Hydrogen adsorption and coadsorption with oxygen on W single crystal surface measured by mass spectroscopy and low energy electron diffraction method
Auger emission spectroscopy, low energy electron diffraction, sputtering studies, and adhesion and friction experiments on single crystals of Cu-Sn, Cu-Al, and Fe-Al alloys
Free surface equilibrium segregation in solid solutions of Cu-Al alloys single crystals by Auger electron spectroscopy and low energy electron diffraction
Surface segregation, adhesion and friction of monocrystalline Cu-Al, Cu-Sn and Fe-Al alloys from Auger emission spectroscopy and low energy electron diffraction experiments
We report the production of (111) epitaxial Pb films on mica and (111) textured Pb films on mica and glass. Film structure is studied by reflection electron diffraction and by etching and optical microscopy. Thin (about 1000 A) epitaxial films are found to be doubly positioned. Reorientation during growth of thicker films leads to single positioning in areas several tenths of a millimeter across.
Solid film lubricants of radio frequency sputtered molybdenum disulfide (MoS2) were applied to silver, gold, copper, and bronze surfaces that had various pretreatments (mechanical polishing, sputter etching, oxidation, and sulfurization). Optical and electron transmission micrographs and electron diffraction patterns were used to interpret the film formation characteristics and to evaluate the sputtering conditions in regard to the film and substrate compatibility. Sputtered MoS2 films flaked and peeled on silver, copper, and bronze surfaces except when the surfaces had been specially oxidized. The flaking and peeling was a result of sulfide compound formation and the corresponding grain growth of the sulfide film. Sputtered MoS2 films showed no peeling and flaking on gold surfaces regardless of surface pretreatment.
The studies reported were conducted to gain a fundamental understanding of adhesion and dynamic friction on an atomic or microscopic level. Fundamental aspects of low energy electron diffraction (LEED), Auger emission spectroscopy (AES), and field ion microscopy (FIM) are discussed. Typical results of studies conducted are considered, giving attention to LEED-AES experiments, pin and disk experiments, and field ion microscope investigations.
As an extension of previous studies of radiation damage produced by heavy solar flare ions in lunar soils, high-voltage electron microscopy and electron diffraction procedures were used to rank a Luna 20 sample among the other soils returned by Soviet and American lunar missions. Micron-sized soil grains from the Luna 20 mission are the most lightly irradiated, in contrast to micron-sized grains from Luna 16 soil, which are the most heavily irradiated.
The experimental apparatus used in the investigation consisted of an ultrahigh-vacuum chamber, a triple-grid, a microwave-excited resonance lamp, and an electron energy analyzer. The chemical nature of the chemisorbed species was studied, taking into account the energy distribution of photoemitted electrons, work function determinations, and low-energy electron diffraction patterns.
A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.
The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.
The paper considers the interface between two bulk metals and the effect of this interface on adhesive bonding, resistance to tangential displacements, friction and the interfacial transport from one surface to another. Using Auger emission spectroscopy, field ion microscopy, and low energy electron diffraction techniques, the influence of surface orientation, lattice registry, crystal lattice structure and defects, metal surface chemistry and alloying on the characteristics of the interface was studied for noble, platinum, transition, and Group 4B metals. With dissimilar metals in contact, epitaxial transfer of the cohesively weaker to the cohesively stronger metal has been observed. Surface chemical activity of the noble and platinum metals is shown to affect interfacial behavior as does a valence bonding in the transition metals, and the degree of metallic nature in the Group 4B elements. Alloying elements, e.g., Si and Fe, can alter interfacial behavior by segregation to the surface of metals or by altering bulk properties such as crystal transformation kinetics.
The oxidation at 900 and 1,000 C of four nickel-base superalloys in 1 atmosphere of slowly flowing oxygen was investigated. Thermogravimetric rate data were obtained for periods to 100 hours. The morphology and composition of the oxide scales formed after 100 hours were studied by optical microscopy, X-ray diffraction, electron microprobe, scanning electron microscopy, and X-ray photoelectron spectroscopy (ESCA). Alloys B-1900 and VIA were found to be primarily alumina formers, though probably 25 percent of their surface was covered by CR2O3-containing oxides at 900 C. Alloys 713C and IN-738 were primarily chromia formers, though the surface of 713C at 1,000 C was covered with NiO, and the surface of IN-738 at both temperatures was covered with a thin layer of TiO2.