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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Specific heats and thermodynamic critical fields in Zn-doped YBa2Cu3O(7-x) according to an induced-pairing model

Electronic specific heats and thermodynamic critical fields are calculated in a mean-field version of an induced-pairing model for superconductivity, and compared with results of Loram et al. (1990) on YBa2(Cu(1-y)Zn(y))3O(7-x). This model involves induction of pairing of holes in a wideband by strongly bound electronlike pairs. It is assumed that the planar hole concentration for no Zn addition is close to, but slightly higher than, that for the maximum Tc, and that it increases by 0.015 per planar Cu ion for each increase of y by 0.01. Parameters of the model are taken to be the same as in a previous publication in which energy gaps were discussed, except that an effective hybridization parameter is adjusted for each Zn concentration to give agreement with the observed Tc. Results are presented for y = 0.0, 0.01, and 0.03. The agreement with experiment is good for thermodynamic critical fields, and is fair for specific heats. For specimens with larger y, with relatively low T(c)s, it is argued that the model should be supplemented to include effects of a BCS-type interaction amongst the wideband carriers.

Eagles, D. M.↗
NASA NTRS2000

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Asenov, Asen↗
NASA NTRS1999

Nanomechanics of Carbon and CxByNz Nanotubes: Via a Quantum Molecular Dynamics Method

Nanomechanics of single-wall C, BN and BC$_3$ and B doped C nanotubes under axial compression and tension are investigated through a generalized tight-binding molecular dynamics (GTBMD) and {\it ab-initio} electronic structure methods. The dynamic strength of BN, BC$_3$ and B doped C nanotubes for small axial strain are comparable to each other. The main difference is in the critical strain at which structural collapse occurs. For example, even a shallow doping with B lowers the value of critical strain for C nanotubes. The critical strain for BN nanotube is found to be more than that for the similar C nanotube. Once the structural collapse starts to occur we find that carbon nanotubes irreversibly go into plastic deformation regime via the formation of tetrahedral (four-fold coordinated) bonds at the location of sharp pinches or kinks. This finding is considerably different from the classical MD (molecular dynamics) simulation results known so far. The energetics and electronic densities of states of the collapsed structures, investigated with {\it ab-initio) methods, will also be discussed.

Srivastava, Deepak↗
NASA NTRS1991

Molecules with enhanced electronic polarizabilities based on defect-like states in conjugated polymers

Highly conjugated organic polymers typically have large non-resonant electronic susceptibilities, which give the molecules unusual optical properties. To enhance these properties, defects are introduced into the polymer chain. Examples include light doping of the conjugated polymer and synthesis, conjugated polymers which incorporate either electron donating or accepting groups, and conjugated polymers which contain a photoexcitable species capable of reversibly transferring its electron to an acceptor. Such defects in the chain permit enhancement of the second hyperpolarizability by at least an order of magnitude.

Beratan, David N.↗
NASA NTRS1978

The effects of copper and titanium on silicon solar cells

Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.

Salama, A. M.↗
NASA NTRS2018

Temperature Mapping Above and Below Air Film-Cooled Thermal Barrier Coatings Using Phosphor Thermometry

Thermal barrier coatings (TBCs) are typically used in conjunction with air film cooling to maximize overall cooling effectiveness and reliability while minimizing sacrifices in engine performance. The effects of thermal barrier coating (TBC) thermal protection and air film cooling effectiveness have usually been studied separately; however, their contributions to combined cooling effectiveness are interdependent and are not simply additive. The combined cooling effectiveness is always less than the sum of the cooling effectiveness of stand-alone TBC protection and stand-alone air film cooling. These diminishing returns arise because adding the thermally insulating TBC between the cooling air and the surface to be cooled reduces the air film cooling effectiveness and because the air film cooling reduces the heat flux through the TBC and therefore reduces the temperature difference sustained across the TBC thickness. Due to these considerations, combined cooling effectiveness must be measured to achieve an optimum balance between TBC thermal protection and air film cooling. In this investigation, temperature mapping above and below air film-cooled TBCs was performed using luminescence lifetime imaging-based phosphor thermometry. Measurements were performed in the NASA GRC Mach 0.3 burner rig on a TBC-coated plate using a scaled-up cooling hole geometry where both the hot mainstream gas temperature and the blowing ratio were varied. Surface temperature maps were obtained from a Cr-doped GdAlO3 thermographic phosphor deposited on the surface of the electron-beam vapor-deposited yttria-stabilized zirconia (YSZ) TBC. From separate plates, temperature maps from the bottom of the TBC were obtained from a thin Er-doped YSZ layer integrated into the TBC below the overlying undoped YSZ. Procedures for temperature and cooling effectiveness mapping above and below the air film-cooled TBC surface are described. Most importantly, these measurements enable mapping the combined cooling effectiveness below the TBC, which is more important than surface cooling effectiveness when there is a barrier coating between the hot mainstream gas and the surface that needs thermal protection. Advantages of the luminescence lifetime imaging method over infrared thermography, as well as its limitations to steady-state conditions are discussed.

cooling effectiveness.↗
NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗
NASA NTRS1983

The transient oxidation of single crystal NiAl+Zr

The 800 C oxidation of oriented single crystals of Zr doped beta-NiAl was studied using transmission electron microscopy. The oxide phases and metal-oxide orientation relationships were determined to characterize the transient stages of oxidation prior to the transformation to or formation of alpha-Al2O3. On (001) and (012) metal orientations, NiAl2O4 was the first oxide to form followed by delta-Al2O3 which becomes the predominant oxide phase. All oxides were highly epitaxially related to the metal; the orientation relationships being function of parallel cation close-packed directions in the meta and oxide. On (011) and (111) metal orientations, gamma-Al2O3 became the predominant oxide phase rather than delta-Al2O3, indicating a structural stability from the highly epitaxial oxides. The relative concentration of aluminum in the oxide scales increased with time indicating preferential gamma-or delta-Al2O3 growth. The striking feature common to the orientation relationships is the alignment of 100 m and 110 ox directions, believed to result from the minimal 3 percent mismatch between the corresponding (100)m and (110)ox planes.

Doychak, J. K.↗
NASA NTRS1984

Physical electronics of cooled operation of very short compound semiconductor trasnsistors

Very high performance is being developed in compound semiconductor transistors. High frequency and low noise figure operation in the GaAs FET have already been established. Substantially more performance increases are expected. A comparison of compound semiconductor materials, and their alloys, the physical concepts of high average electron velocity, and the special benefits of modulation doped heterojunction FET devices is presented.

Eastman, L. F.↗
NASA NTRS1986

Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures

Impact ionization across the band-edge discontinuity of quantum-well heterostructures is studied theoretically. A heterolayer structure of alternating Al(x)Ga(1-x)As and GaAs layers is considered where the GaAs layers are heavily doped with donors. Thus a large number of electrons is confined to the quantum-well region. Incident electrons are heated up by applied electric fields and collide with the electrons confined in the well regions. Both the ionization rate as a function of the incident energy, and average ionization rates are computed. Device applications of such multiple quantum-well structures and the possibility of a complete analog to the conventional photomultiplier are discussed.

Chuang, S. L.↗
NASA NTRS1989

Predicted performance of InP solar cells in Cassegrainian and slats space concentrator arrays at 20 to 100 AM0, 80 to 100 C

Researchers have calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+InP solar cells on incident intensities up 200 AM0 and temperatures up to 100 C (373K). Both circular and rectangular cells have been considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80 to 100 C and the latter for use in a Slats type concentrator array at 20 AM0 80 to 100 C. Calculation of the temperature dependence of the performance parameters I sub sc, V sub oc, FF and eta was done by first verifying that the use of the measured temperature variation of I sub sc, of the best published value of the temperature dependence of the bandgap of InP, and of the temperature dependences of the lifetimes and mobilities of electrons and holes the same as in equivalently doped GaAs, gave calculated results that closely matched measured data on the temperature variation of I sub sc, V sub oc, and FF of four existing InP cells at 1 AM0. It was then assumed that the same temperature dependences of I sub sc, the bandgap and lifetimes and mobilities would hold in the near-optimally designed cells at the higher concentrations.

Goradia, Chandra↗
NASA NTRS1994

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗
NASA NTRS1994

Quantum state transfer in double-quantum-well devices

A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

Jakumeit, Jurgen↗
NASA NTRS2001

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗
NASA NTRS2003

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗
NASA NTRS2019

UV photon counting detectors for high-altitude balloon and sounding rocket experiments

We report on development of ultraviolet photon counting detectors based on the 2D-doped and atomic layer deposition (ALD) custom coated electron multiplying CCD (EMCCDs) and their deployment in a high-altitude balloon experiment Faint Intergalactic-medium Redshifted Emission Balloon (FIREBall)-2 that was launched on September 22, 2018. The detector quantum efficiency (QE) was optimized for the narrow stratospheric window of a balloon at 200 - 225 nm.

Jones, Todd J.↗
NASA NTRS2005

Nanotube/Quantum Dot-Polymer Solar Cells

Single wall carbon nanotubes used or this study were synthesized using the pulse laser vaporization technique. The as-produced SWNTs were collected from the condensed region on the quartz tube outside the furnace and purified by modification of the previously reported procedure. Preparation of the SWNT-P3OT composite solutions was performed using a series of mixing and sonication steps as previously demonstrated for other SWNT-polymer systems. Device fabrication involved the use of commercially-obtained, high quality (i.e., less than 10 W/sq.) ITO-coated polyethylene terapthalate (PET) substrates. Initially, an intrinsic layer of pristine P3OT is spray deposited (approx. 1-2 mL of the 15 mg/mL solution) onto the masked, 1 sq in. active area of the substrate. This is followed with spray deposition of the SWNT-P3OT composite solutions at similar volumes. As seen completion of the solar cell occurs when aluminum contacts (typical thicknesses of l000A) are applied to the IT0 and SWNT-P3OT composite film layers. The homogeneous distribution of SWNTs in a polymer matrix is dependent upon the ability of the polymer chain to associate with the SWNT superstructure. Stable composite dispersions of 0.1 % and 1.0% w/w SWNTs in P3OT were produced and analyzed in this study. Optical spectroscopy was conducted to observe the SWNT doping level effects on the absorption properties and infer potential electronic interactions between dopant and polymer. Shown is an overlay of these spectra where the pristine P3OT shows strong optical absorption at energies less than 2 eV. As expected, variation in absorption properties for the SWNT-P3OT composites is observed as the doping level increases. Through modification of the SWNT doping level in the polymer, it is possible to alter the absorption pattern of these composite materials. In fact, at these relatively low doping levels, the P3OT shows a significant enhancement in absorption through the near-IR and visible regions. The gray curve for purified SWNTs is offset from the other three for clarity, but indicates the typical complex pattern observed for this spectral range.

Bailey, Sheila G.↗