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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Biexciton Condensation in Electron-Hole-Doped Hubbard Bilayers: A Sign-Problem-Free Quantum Monte Carlo Study

The bilayer Hubbard model with electron-hole doping is an ideal platform to study excitonic orders due to suppressed recombination via spatial separation of electrons and holes. However, suffering from the sign problem, previous quantum Monte Carlo studies could not arrive at an unequivocal conclusion regarding the presence of phases with clear signatures of excitonic condensation in bilayer Hubbard models. Here, we develop a determinant quantum Monte Carlo algorithm for the bilayer Hubbard model that is sign-problem-free for equal and opposite doping in the two layers and study excitonic order and charge and spin density modulations as a function of chemical potential difference between the two layers, on-site Coulomb repulsion, and interlayer interaction. In the intermediate coupling regime and in proximity to the SU(4)-symmetric point, we find a biexcitonic condensate phase at finite electron-hole doping, as well as a competing (π, π) charge density wave state. In this study, we extract the Berezinskii-Kosterlitz-Thouless transition temperature from superfluid density and a finite-size scaling analysis of the correlation functions and explain our results in terms of an effective biexcitonic hard-core boson model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Unraveling Enhanced Superconductivity in Single-Layer FeSe through Substrate Surface Terminations

Single-layer FeSe on SrTiO 3 (001) substrates shows a superconducting transition temperature much higher than that of bulk FeSe, which has been attributed to factors such as electron doping, interfacial electron–phonon coupling, and electron correlations. To pinpoint the primary driver, we grew single-layer FeSe films on SrTiO 3 (001) substrates with coexisting TiO 2 and SrO surface terminations. Scanning tunneling spectroscopy revealed a larger superconducting gap (17.0 meV) on the TiO 2 -termination than on the SrO-termination (10.5 meV). Tunneling spectroscopy also showed a larger work function on the SrO surface, resulting in reduced charge transfer to FeSe, as confirmed by angle-resolved photoemission spectroscopy. Scanning transmission electron microscopy further revealed distinctive interfacial atomic-scale structures, with the Se–Fe–Se tetrahedral angle changing from 109.5° on the SrO-termination to 104.9° on the TiO 2 -termination. Compared to dynamical mean field theory calculations, our results indicate that enhanced superconductivity in single-layer FeSe/TiO 2 arises from optimal electron correlations, in addition to sufficient charge transfer from the substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Phonons in Potassium-doped Graphene: The Effects of Electron-phonon Interactions, Dimensionality, and Adatom Ordering

Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G peak hardens and narrows with increasing doping, analogous to the trend seen in graphene doped via the field effect. At high dopings, beyond those accessible by the field effect, the G peak strongly softens and broadens. This is interpreted as a dynamic, nonadiabatic renormalization of the phonon self-energy. At dopings between the light and heavily doped regimes, we find a robust inhomogeneous phase where the potassium coverage is segregated into regions of high and low density. The phonon energies, linewidths, and tunability are notably very similar for one- to four-layer potassium-doped graphene, but significantly different to bulk potassium-doped graphite.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Bandwidth and Electron Correlation-Tuned Superconductivity in Rb 0.8 Fe 2 ( Se 1 - z S z ) 2

Here, we present a systematic angle-resolved photoemission spectroscopy study of the substitution dependence of the electronic structure of Rb 0.8 Fe 2 (Se 1-z S z ) 2 (z = 0, 0.5, 1), where superconductivity is continuously suppressed into a metallic phase. Going from the nonsuperconducting Rb 0.8 Fe 2 S 2 to superconducting Rb 0.8 Fe 2 Se 2 , we observe little change of the Fermi surface topology, but a reduction of the overall bandwidth by a factor of 2. Hence, for these heavily electron-doped iron chalcogenides, we have identified electron correlation as explicitly manifested in the quasiparticle bandwidth to be the important tuning parameter for superconductivity, and that moderate correlation is essential to achieving high T C .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Interplane resistivity of underdoped single crystals (Ba1-xKx)Fe2As2(0<= x < 0.34)

The temperature-dependent interplane resistivity ρc(T) was measured in the hole-doped iron arsenide superconductor (Ba1-xKx)Fe2As2 over a doping range from parent compound to optimal doping at Tc≈38 K, 0≤x≤0.34. The measurements were undertaken on high-quality single crystals grown from FeAs flux. The coupled magnetic/structural transition at TSM leads to a clear accelerated decrease of ρc(T) on cooling in samples with Tc<26 K (x<0.25). This decrease in the hole-doped material is in notable contrast to the increase in ρc(T) in the electron-doped Ba(Fe1-xCox)Fe 2As2 and isoelectron-substituted BaFe2(As1-xPx)2. TSM decreases very sharply with doping, dropping from Ts=71 K to zero on increase of Tc from approximately 25 to 27 K. ρc(T) becomes linear in T close to optimal doping. The broad crossover maximum in ρc(T), found in the parent BaFe2As2 at around Tmax~200 K, shifts to higher temperature ~250 K with doping of x=0.34. The maximum shows clear correlation with the broad crossover feature found in the temperature-dependent in-plane resistivity ρa(T). The evolution with doping of Tmax in (Ba1-xKx)Fe2As2 is in notable contrast with both the rapid suppression of Tmax found in Ba(Fe1-xTx)2As2 (T=Co,Rh,Ni,Pd) and its rapid increase in BaFe2(As1-xPx)2. This observation suggests that pseudogap features are much stronger in hole-doped than in electron-doped iron-based superconductors, revealing significant electron-hole doping asymmetry similar to that in the cuprates.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Conductivity Tuning via Doping with Electron Donating and Withdrawing Molecules in Perovskite CsPbI 3 Nanocrystal Films

Doping of semiconductors enables fine control over the excess charge carriers, and thus the overall electronic properties, crucial to many technologies. Controlled doping in lead-halide perovskite semiconductors has thus far proven to be difficult. However, lower dimensional perovskites such as nanocrystals, with their high surface-area-to-volume ratio, are particularly well-suited for doping via ground-state molecular charge transfer. Here, the tunability of the electronic properties of perovskite nanocrystal arrays is detailed using physically adsorbed molecular dopants. Incorporation of the dopant molecules into electronically coupled CsPbI 3 nanocrystal arrays is confirmed via infrared and photoelectron spectroscopies. Untreated CsPbI 3 nanocrystal films are found to be slightly p-type with increasing conductivity achieved by incorporating the electron-accepting dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) and decreasing conductivity for the electron-donating dopant benzyl viologen. Time-resolved spectroscopic measurements reveal the time scales of Auger-mediated recombination in the presence of excess electrons or holes. Microwave conductance and field-effect transistor measurements demonstrate that both the local and long-range hole mobility are improved by F4TCNQ doping of the nanocrystal arrays. The improved hole mobility in photoexcited p-type arrays leads to a pronounced enhancement in phototransistors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

N-type molecular doping of a semicrystalline conjugated polymer through cation exchange

Control of electrical doping is indispensable in any semiconductor device, and both efficient hole and electron doping are required for many devices. In organic semiconductors, however, electron doping has been essentially more problematic compared to hole doping because in general organic semiconductors have low electron affinities and require dopants with low ionization potentials that are often air-sensitive. Here, we adapt an efficient molecular doping method, so-called ion-exchange doping, to dope electrons in a polymeric semiconductor. We initially reduce the polymeric semiconductor using one electron transfer from molecular dopants, and then the ionized dopants in the resulting air-unstable films are replaced with secondary ions via cation exchange. Improved ambient stability and crystallinity of the doped polymeric semiconductors are achieved when a specific bulky molecular cation was chosen as the secondary ion, compared to conventional methods. The presented strategy can overcome the trade-off relationship between reducing capability and ambient stability in molecular dopants, and a wider selection of dopant ions will help to realize ambient-stable electron conductors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interest due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.

Zhang, Kenan↗
DOE OSTI2014

First principles DFT investigation of yttrium-doped graphene: Electronic structure and hydrogen storage

The electronic structure and hydrogen storage capability of Yttrium-doped grapheme has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom prefers the hollow site of the hexagonal ring with a binding energy of 1.40 eV. Doping by Y makes the system metallic and magnetic with a magnetic moment of 2.11 μ{sub B}. Y decorated graphene can adsorb up to four hydrogen molecules with an average binding energy of 0.415 eV. All the hydrogen atoms are physisorbed with an average desorption temperature of 530.44 K. The Y atoms can be placed only in alternate hexagons, which imply a wt% of 6.17, close to the DoE criterion for hydrogen storage materials. Thus, this system is potential hydrogen storage medium with 100% recycling capability.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of potassium doping on electronic structure and thermoelectric properties of topological crystalline insulator

Topological crystalline insulator (TCI), Pb{sub 0.6}Sn{sub 0.4}Te, exhibits metallic surface states protected by crystal mirror symmetry with negligibly small band gap. Enhancement of its thermoelectric performances needs tuning of its electronic structure particularly through engineering of its band gap. While physical perturbations tune the electronic structure of TCI by breaking of the crystal mirror symmetry, chemical means such as doping have been more attractive recently as they result in better thermoelectric performance in TCIs. Here, we demonstrate that K doping in TCI, Pb{sub 0.6}Sn{sub 0.4}Te, breaks the crystal mirror symmetry locally and widens electronic band gap, which is confirmed by direct electronic absorption spectroscopy and electronic structure calculations. K doping in Pb{sub 0.6}Sn{sub 0.4}Te increases p-type carrier concentration and suppresses the bipolar conduction via widening a band gap, which collectively boosts the thermoelectric figure of merit (ZT) to 1 at 708 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Electronic mobility, doping, and defects in epitaxial BaZrS 3 chalcogenide perovskite thin films

We present the electronic transport properties of BaZrS 3 thin films grown epitaxially by gas-source molecular beam epitaxy. We observe n-type behavior in all samples, with carrier concentration ranging from 4 × 10 18 to 4 × 10 20 cm −3 at room temperature (RT). We observe a champion RT Hall mobility of 11.1 cm 2 V −1 s −1 , which is competitive with established thin-film photovoltaic absorbers. Temperature-dependent Hall mobility data show that phonon scattering dominates at room temperature, in agreement with computational predictions. X-ray diffraction data illustrate a correlation between mobility and antiphase boundary concentration, illustrating how microstructure can affect transport. Despite the well-established environmental stability of chalcogenide perovskites, we observe significant changes to electronic properties as a function of storage time in ambient conditions. With the help of secondary ion mass spectrometry measurements, we propose and support a defect mechanism that explains this behavior: as-grown films have a high concentration of sulfur vacancies that are shallow donors (V ⋅ S or V ⋅⋅ S ), which are converted into neutral oxygen defects (O$^{×}_{S}$) upon air exposure. We discuss the relevance of this defect mechanism within the larger context of chalcogenide perovskite research, and we identify means to stabilize the electronic properties.

Van Sambeek, Jack [Massachusetts Institute of Tech↗
DOE OSTI2016

Observation of the anisotropic Dirac cone in the band dispersion of 112-structured iron-based superconductor Ca{sub 0.9}La{sub 0.1}FeAs{sub 2}

CaFeAs{sub 2} is a parent compound of recently discovered 112-type iron-based superconductors. It is predicted to be a staggered intercalation compound that naturally integrates both quantum spin Hall insulating and superconducting layers and an ideal system for the realization of Majorana modes. We performed a systematical angle-resolved photoemission spectroscopy and first-principles calculation study of the slightly electron-doped CaFeAs{sub 2}. We found that the zigzag As chain of 112-type iron-based superconductors play a considerable role in the low-energy electronic structure, resulting in the characteristic Dirac-cone like band dispersion as the prediction. Our experimental results further confirm that these Dirac cones only exist around the X but not Y points in the Brillouin zone, breaking the S{sub 4} symmetry at iron sites. Our findings present the compelling support to the theoretical prediction that the 112-type iron-based superconductors might host the topological nontrivial edge states. The slightly electron doped CaFeAs{sub 2} would provide us a unique opportunity to realize and explore Majorana fermion physics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Theory of anisotropic elastoresistivity of two-dimensional extremely strongly correlated metals

There is considerable recent interest in the phenomenon of anisotropic electroresistivity of correlated metals. Although some interesting work has been done on the iron-based superconducting systems, not much is known for the cuprate materials. Here we study the anisotropy of elastoresistivity for cuprates in the normal state. We introduce theoretical results for the effect of strain on resistivity and additionally on the optical weight and local density of states. We use the recently developed extremely strongly correlated Fermi liquid theory in two dimensions, which accounts quantitatively for the unstrained resistivities for three families of single-layer cuprates. The strained hoppings of a tight-binding model are roughly modeled analogously to strained transition metals. The strained resistivity for a two-dimensional t-t'-J model are then obtained, using the equations developed in recent work. Our quantitative predictions for these quantities have the prospect of experimental tests in the near future, for strongly correlated materials such as the hole-doped and electron-doped high-T c materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗