Solar cell radiation damage studies with 1 mev electrons and 4.6 mev protons
Resistance of silicon solar cells to proton and electron radiation
ELECTRON RADIATION↗
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Electrically Variable Resistive Memory Devices
Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.
Liu, Shangqing↗
Atomic-Scale Behavior of Radiation-Resistant ZnO under High-Energy Electron Bombardment
Understanding the atomic structure and defect characteristics of ZnO thin films is crucial for optimizing their electronic properties and performance in advanced applications. Here, we investigate the atomic structure and defect characteristics of atomic layer deposition (ALD)-grown ZnO thin films by using aberration-corrected scanning transmission electron microscopy (STEM). Atomic-resolution imaging identifies prevalent stacking faults, dipole disorder, and various grain boundary types, which are believed to influence the electronic properties of ZnO. Additionally, real-time electron beam exposure experiments demonstrate structural transformations, including crystal growth and surface rearrangements. These findings provide insights into the growth mechanisms of ALD ZnO under high-energy electron irradiation conditions, an important finding for the use of polycrystalline ZnO wide bandgap semiconductors in space-like conditions. In conclusion, our results underscore the capability of STEM in directly visualizing and quantifying atomic-scale defects and beam-induced transformations in radiation-resistant ZnO.
Defects↗
PICOSEC-Micromegas Detector, an innovative solution for Lepton Time Tagging
The PICOSEC-Micromegas (PICOSEC-MM) detector is a novel gaseous detector designed for precise timing resolution in experimental measurements. It eliminates time jitter from charged particles in ionization gaps by using extreme UV Cherenkov light emitted in a crystal, detected by a Micromegas photodetector with an appropriate photocathode. The first single-channel prototype tested in 150 GeV/c muon beams achieved a timing resolution below 25 ps, a significant improvement compared to standard Micropattern Gaseous Detectors (MPGDs). This work explores the specifications for applying these detectors in monitored neutrino beams for the ENUBET Project. Key aspects include exploring resistive technologies, resilient photocathodes, and scalable electronics. New 7-pad resistive detectors are designed to handle the particle flux. In this paper, two potential scenarios are briefly considered: tagging electromagnetic showers with a timing resolution below 30ps in an electromagnetic calorimeter as well as individual particles (mainly muons) with about 20ps respectively.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
A study of embedment and other metallurgical and mechanical characteristics of cross-wire resistance welds
Evaluation of cross-wire resistance welded joints used in electronic assemblies for aerospace applications
RESISTANCE↗
Multipolar Fermi Surface Deformations in Sr 2 RuO 4 Probed by Resistivity and Sound Attenuation: A Window into Electron Viscosity and the Collision Operator
Recent developments in electron hydrodynamics have demonstrated the importance of considering the full structure of the electron-electron scattering operator, which encodes a sequence of lifetimes, one for each component of the Fermi surface deformation in a multipolar expansion. In this context, the dipolar lifetime is measured by resistivity, whereas the quadrupolar component probes the viscosity and can be measured in the bulk via sound attenuation. We introduce a framework to extract the collision operator of an arbitrary metal by combining resistivity and sound attenuation measurements with a realistic calculation of the scattering operator that includes multiband and umklapp effects. The collision operator allows for the prediction of a plethora of properties, including the nonlocal conductivity, and can be used to predict hydrodynamic behavior for bulk metals. As a first application, we apply this framework to Sr 2 RuO 4 in a temperature range where electron-electron scattering is dominant. Furthermore, we find quantitative agreement between our model and the temperature dependence of both the resistivity and the sound attenuation, we find the quadrupolar (𝐵 1𝑔 ) relaxation rate to be 30% higher than the dipolar one due to the presence of hot spots on the 𝛾 band, and we predict a strongly anisotropic viscosity arising from the 𝛼 and 𝛽 bands.
Boltzmann theory↗
Resistive anode image converter
The invention of an apparatus for imaging soft X-ray and ultraviolet electromagnetic radiation and charged particles was described. The apparatus includes a pair of microchannel electron multiplier plates connected in a cascaded chevron configuration which intercepts an incident beam of radiation or charged particles. Incident photons or charged particles strike the front surface of the chevron configuration causing emission of electrons. The electrons are accelerated by a voltage gradient and strike the inner side walls of the individual channels, causing emission of secondary electrons. Accelerated and multiplied secondary electrons impinge upon a resistive anode after they transverse the chevron configuration. A pulse position circuit converts the magnitude or transit time of the currents flowing from the point of impact of the electrons on the resistive anode to four contact electrodes mounted on their periphery of the resistive anode into the spatial coordinates of electron impact.
Lampton, M. L.↗
Permittivity Measurement System Using Stripline Method for the Europa Clipper Mission
High radiation Jovian environment can deposit electrons in highly resistive dielectric materials, which could result in internal electrostatic discharge (IESD) causing damage to sensitive electronics such as the radar for Europa Assessment and Sounding: Ocean to Near-Surface (REASON) instrument on NASA’s Europa Clipper mission. Special dielectric materials like static dissipative Polyetheretherketone (PEEK) ESD are under consideration for the Europa Clipper mission. PEEK loaded with carbon nanofibers improves the ESD performance for this material but the RF characteristics are unknown. We have developed a method to characterize the dielectric constant of a material as a function of frequency and temperature down to 30K. We present the measurement results of four samples of ESD. The measured data shows the permittivity of TECAPEEK ESD 11 is in the range of 7 to 10 at HF and in the range of 6.8 to 8.3 for VHF frequencies. The change in permittivity of ESD 11 down to 30 K is less than 7% at HF and less than 3% at VHF frequency. The sample to sample variability can be attributed to the inhomogeneity of the material.
Decrossas, Emmanuel↗
Study of space environment fabrication and repair techniques Summary report, period ending Apr. 1966
Electron beam and resistance welding evaluated for application to fabrication of structures in extraterrestrial environment
ELECTRON BEAM WELDING↗
Electronic nematicity in Sr 2 RuO 4
We have measured the angle-resolved transverse resistivity (ARTR), a sensitive indicator of electronic anisotropy, in high-quality thin films of the unconventional superconductor Sr 2 RuO 4 grown on various substrates. The ARTR signal, heralding the electronic nematicity or a large nematic susceptibility, is present and substantial already at room temperature and grows by an order of magnitude upon cooling down to 4 K. In Sr 2 RuO 4 films deposited on tetragonal substrates the highest-conductivity direction does not coincide with any crystallographic axis. In films deposited on orthorhombic substrates it tends to align with the shorter axis; however, the magnitude of the anisotropy stays the same despite the large lattice distortion. These are strong indications of actual or incipient electronic nematicity in Sr 2 RuO 4 .
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Stabilization of garnet/Li interphase by diluting the electronic conductor
The high interfacial resistance and lithium (Li) dendrite growth are two major challenges for solid-state Li batteries (SSLBs). The lack of understanding on the correlations between electronic conductivity and Li dendrite formation limits the success of SSLBs. Here, by diluting the electronic conductor from the interphase to bulk Li during annealing of the aluminium nitride (AlN) interlayer, we changed the interphase from mixed ionic/electronic conductive to solely ionic conductive, and from lithiophilic to lithiophobic to fundamentally understand the correlation among electronic conductivity, Li dendrite, and interfacial resistance. During the conversion-alloy reaction between AlN and Li, the lithiophilic and electronic conductive Li x Al diffused into Li, forming a compact lithiophobic and ionic conductive Li 3 N, which achieved an ultrahigh critical current density of 2.6/14.0 mA/cm 2 in the time/capacity-constant mode, respectively. The fundamental understanding on the effect of interphase nature on interfacial resistance and Li dendrite suppression will provide guidelines for designing high-performance SSLBs.
25 ENERGY STORAGE↗
Programmable Analog Memory Resistors For Electronic Neural Networks
Electrical resistance of new solid-state device altered repeatedly by suitable control signals, yet remains at steady value when control signal removed. Resistance set at low value ("on" state), high value ("off" state), or at any convenient intermediate value and left there until new value desired. Circuits of this type particularly useful in nonvolatile, associative electronic memories based on models of neural networks. Such programmable analog memory resistors ideally suited as synaptic interconnects in "self-learning" neural nets. Operation of device depends on electrochromic property of WO3, which when pure is insulator. Potential uses include nonvolatile, erasable, electronically programmable read-only memories.
Ramesham, Rajeshuni↗
Barrier coatings
A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.
Source record↗
Additional extensions to the NASCAP computer code, volume 3
The ION computer code is designed to calculate charge exchange ion densities, electric potentials, plasma temperatures, and current densities external to a neutralized ion engine in R-Z geometry. The present version assumes the beam ion current and density to be known and specified, and the neutralizing electrons to originate from a hot-wire ring surrounding the beam orifice. The plasma is treated as being resistive, with an electron relaxation time comparable to the plasma frequency. Together with the thermal and electrical boundary conditions described below and other straightforward engine parameters, these assumptions suffice to determine the required quantities. The ION code, written in ASCII FORTRAN for UNIVAC 1100 series computers, is designed to be run interactively, although it can also be run in batch mode. The input is free-format, and the output is mainly graphical, using the machine-independent graphics developed for the NASCAP code. The executive routine calls the code's major subroutines in user-specified order, and the code allows great latitude for restart and parameter change.
Mandell, M. J.↗
Method of disjoining adhesively bonded electronic cordwood modules
Embedment of resistive heating elements in a cordwood module used for packaging electronic components, facilitates separation of the adhesive bond between the module, and metal heat sink and the potting material without damaging the components. Electrical power applied to the elements causes breakdown of bonding material.
Sacramone, P. J.↗
Particle and fluid simulations of resistive current-driven electrostatic ion cyclotron waves
The results from 1-D numerical simulations of electrostatic ion cyclotron waves (EIC) are presented for a model in which the electrons are a resistive (collisional) fluid. Simulations of both the kinetic and fluid descriptions are performed and compared in order to assess the fundamental limitations of fluid theory for EIC waves. The effect of ion-neutral collisions is also included using a simple Monte Carlo technique. It is found that a small ion-neutral collision frequency destroys the frequency harmonic coupling of kinetic EIC waves and tends to validate the fluid description. The saturation amplitude of the current-driven EIC instability is in agreement with recent laboratory experiments. The coherent nature (extremely narrow spectral width) and phase velocity agree with ground based (coherent backscatter radars) and in situ observations of current-driven EIC waves in the high latitude ionosphere.
Seyler, Charles E.↗
Electron-induced chemical transformation of vapor-phase synthesized hybrid resist materials for EUV and beyond EUV lithography
Here, in this study, we utilize an in situ Fourier transform infrared (FTIR) spectroscopy chamber equipped with an electron flood gun to comprehensively investigate the electron-induced chemical transformations in advanced inorganic–organic hybrid resist thin films. The characteristics of the electron gun were assessed, showing a detectable current decrease with increasing Faraday cup bias voltage, confirming that the electron energies impacting the sample were within the expected range. This unique FTIR system was applied to study two hybrid resist thin-film systems, Al–HQ and Zn–HQ, both exhibiting saturation growth characteristics at 150 °C. Results revealed that Al–HQ demonstrated superior electron sensitivity compared to Zn–HQ at energies ≤ 100 eV. Chemical changes observed were consistent with previous findings, underscoring the potential of this methodology to elucidate exposure mechanisms. This research contributes to the fundamental understanding necessary for the development of advanced resist materials for the next-generation nanolithography applications.
36 MATERIALS SCIENCE↗
Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistor
A novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
Peng, C. K.↗