EFFECTS OF TEMPERATURE & ILLUMINANCE ON CHLORELLA GROWTH UNCOUPLED FROM CELL DIVISION
Effects of temperature & illuminance on chlorella growth uncoupled from cell division
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Growth kinetics of the (001) face of TGS below the ferroelectric transition temperature
The growth rates of the (001) face of triglycine sulfate (TGS) from aqueous solutions were measured at 33.55 C in an apparatus which produced a laminar flow of solution past the crystal. The data of growth rate as a function of relative supersaturation were compared with the results of two well-known models: the Burton-Cabrera-Frank (1951) surface diffusion model and the birth-and-spreading growth model. Both models produced good fits to the growth rate data. However, on the basis of the qualitative aspects of the experimentally-observed growth, it is suggested that the correct growth model for these crystals is the Burton-Cabrera-Frank model.
Reiss, D. A.↗
Protein crystal growth in microgravity: Temperature induced large scale crystallization of insulin
One of the major stumbling blocks that prevents rapid structure determination using x-ray crystallography is macro-molecular crystal growth. There are many examples where crystallization takes longer than structure determination. In some cases, it is impossible to grow useful crystals on earth. Recent experiments conducted in conjuction with NASA on various Space Shuttle missions have demonstrated that protein crystals often grow larger and display better internal molecular order than their earth-grown counterparts. This paper reports results from three Shuttle flights using the Protein Crystallization Facility (PCF). The PCF hardware produced large, high-quality insulin crystals by using a temperature change as the sole means to affect protein solubility and thus, crystallization. The facility consists of cylinders/containers with volumes of 500, 200, 100, and 50 ml. Data from the three Shuttle flights demonstrated that larger, higher resolution crystals (as evidenced by x-ray diffraction data) were obtained from the microgravity experiments when compared to earth-grown crystals.
Long, Marianna M.↗
Control of Thermal Stress in Dendritic Web Growth
The temperature distributions which are present during the growth of ribbon crystals generate stresses which can adversely affect the growth or perfection of the material. Several different effects occur which depend on the magnitude and distribution of these stresses. In most cases, the observed phenomena are the result of complex interactions of a number of mechanisms. In many instances, however, one mechanism predominates to such an extent that a simplified distinction between the various effects can be made. Definitions based on observed behavior in dendritic web growth are outlined.
Seidensticker, R. G.↗
NtGCM User's Manual: 1.1 (High Pressure High Temperature Laser based) Nanotube Growth Chamber Monitor
This manual describes the installation and use of NtGCM software. NtGCM is software designed for monitoring the growth of nanotubes in a high temperature and high pressure chamber using a laser*. NtGCM software monitors a dozen dierent parameters that are important to understanding the growth of the nanomaterials including the laser input power, the temperature at eight separate locations inside and outside the growth chamber, as well as the pressure and ow rate of the gaseous media that control the environment in the chamber. The measurements are all made in real time. The program features a robust user account management layer and a rich data display manager that allows plotted data, displayed units and other parameters to be changed on the y for the operator's convenience.
Sauti, Godfrey↗
Elevated Temperature Slow Crack Growth of Silicon Nitride Under Dynamic, Static and Cyclic Flexural Loading
The slow crack growth parameters of a hot-pressed silicon nitride were determined at 1200 and 1300 C in air by statically, dynamically and cyclicly loading bend specimens. The fatigue parameters were estimated using the recently developed CARES/Life computer code. Good agreement exists between the flexural results. However, fatigue susceptibility under static uniaxial tensile loading, reported elsewhere, was greater than in flexure. Cyclic flexural loading resulted in the lowest apparent flexural fatigue susceptibility.
Choi, Sung R.↗
High Temperature Slow Crack Growth of Si3N4 Specimens Subjected to Uniaxial and Biaxial Dynamic Fatigue Loading Conditions
The slow crack growth of a hot-pressed silicon nitride was determined at 1300 C in air using dynamic fatigue testing under both uniaxial and biaxial stress states. Good agreement in fatigue parameter exists between the data obtained from uniaxial and biaxial loading conditions. A reasonable prediction of dynamic fatigue from one stress state to another was made using the recently developed CARES/LIFE computer code.
Choi, Sung R.↗
Effect of microbial growth rate on temperature and metabolic water recorded in 18O/16O ratios of PO4 in DNA
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Fei Wang↗
The influence of temperature on fatigue crack growth in a mill annealed Ti-6Al-4V alloy.
To study the influence of temperature on the rate of fatigue crack growth in high strength metal alloys, constant load amplitude fatigue crack growth experiments were carried out using a .25-in.-thick mill annealed Ti-6Al-4V alloy plate. The rates of fatigue crack growth were determined as a function of temperature, ranging from room temperature to about 290 C, and as a function of the crack tip stress intensity factor in a dehumidified high purity argon environment. Limited correlative experiments were carried out in distilled water, dehumidified oxygen and hydrogen, and in vacuum. The results indicate that the rate of fatigue crack growth is essentially independent of test temperature in this alloy, and is affected by residual moisture in very small concentrations. Companion fractographic examinations suggest that the mechanims for fatigue crack growth in the various environments are essentially the same.
Wei, R. P.↗
Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry
The monolayer-sensitive variable-angle spectroscopic ellipsometry technique was used to study the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an RF power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.
De, Bhola N.↗
Effect of Growth Rate on Elevated Temperature Plastic Flow and Room Temperature Fracture Toughness of Directionally Solidified NiAl-31Cr-3Mo
The eutectic system Ni-33Al-31Cr-3Mo was directionally solidified at rates ranging from 7.6 to 508 mm/h. Samples were examined for microstructure and alloy chemistry, compression tested at 1200 and 1300 K, and subjected to room temperature fracture toughness measurements. Lamellar eutectic grains were formed at 12.7 mm/h; however cellular structures with a radial eutectic pattern developed at faster growth rates. Elevated temperature compression testing between 10(exp -4) to 10(exp -7)/s did not reveal an optimum growth condition, nor did any single growth condition result in a significant fracture toughness advantage. The mechanical behavior, taken together, suggests that Ni-33Al-31Cr-3Mo grown at rates from 25.4 to 254 mm/h will have nominally equivalent properties.
Whittenberger, J. Daniel↗
Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone and Microgravity
A silicon crystal growth experiment has been accomplished using the floating-zone technique under microgravity on a sounding rocket (TEXUS 36). Measurements of temperature fluctuations in the silicon melt zone due to time dependent thermocapillary convection (Marangoni convection) and an observation of the microscopic growth rate were simultaneously performed during the experiment. Temperature fluctuations of about 0.5 - 0.7 C with a frequency range < 0.5Hz were detectable. The microscopic growth rate fluctuates considerably around the average growth rate of 1 mm/min: Growth rates up to 3 to 4mm/min, close to zero mm/min, as well as negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies of temperature fluctuations, microscopic growth rates, and the dopant inhomogeneities correspond quite well, with main frequencies between 0.1 and 0.3 Hz. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, and the characteristic temperature amplitudes and frequencies. At a position 3.4mm above the interface and 1.4mm inside the melt, equivalent to the sensor tip position in the experiment, temperature fluctuations up to 1.8 C and frequencies ? 0.25Hz were found in the simulations.
Schweizer, Markus↗
Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36
Several earlier (micro)g experiments have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed on the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Maran-goni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies f? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.
Croell, Arne↗
Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36
Several pg experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.
Croell, Arne↗
Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone Under Microgravity
USA Several microgravity experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4 mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies ? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.
Croell, Arne↗
Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors
The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.
Su, Ching-Hua↗
A dynamic model for plant growth: validation study under changing temperatures
A dynamic simulation model to describe vegetative growth of plants, for which some functions and parameter values have been estimated previously by optimization search techniques and numerical experimentation based on data from constant temperature experiments, is validated under conditions of changing temperatures. To test the predictive capacity of the model, dry matter accumulation in the leaves, stems, and roots of tobacco plants (Nicotiana tabacum L.) was measured at 2- or 3-day intervals during a 5-week period when temperatures in controlled-environment rooms were programmed for changes at weekly and daily intervals and in ascending or descending sequences within a range of 14 to 34 degrees C. Simulations of dry matter accumulation and distribution were carried out using the programmed changes for experimental temperatures and compared with the measured values. The agreement between measured and predicted values was close and indicates that the temperature-dependent functional forms derived from constant-temperature experiments are adequate for modelling plant growth responses to conditions of changing temperatures with switching intervals as short as 1 day.
NASA Discipline Number 60-40↗
New high-temperature Chlorella.
Growth characteristics of Chlorella 1-9-30 compared with Chlorella 7-11-05
Sorokin, C.↗