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At least 145 records · Page 8

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NASA NTRS1991

A quick accurate model of nozzle backflow

Backflow from nozzles is a major source of contamination on spacecraft. If the craft contains any exposed high voltages, the neutral density produced by the nozzles in the vicinity of the craft needs to be known in order to assess the possibility of Paschen breakdown or the probability of sheath ionization around a region of the craft that collects electrons for the plasma. A model for backflow has been developed for incorporation into the Environment-Power System Analysis Tool (EPSAT) which quickly estimates both the magnitude of the backflow and the species makeup of the flow. By combining the backflow model with the Simons (1972) model for continuum flow it is possible to quickly estimate the density of each species from a nozzle at any position in space. The model requires only a few physical parameters of the nozzle and the gas as inputs and is therefore ideal for engineering applications.

Kuharski, R. A.↗

NASA NTRSDate not supplied

Space Charge Analysis Capabilities for the Evaluation of High Voltage Insulation Materials

Materials development is crucial for the advancement of electric aviation. Current research focusing on novel multifunctional materials is underway to solve the needs for aerospace systems; however, additional testing of these materials to understand their failure modes is equally critical. This project will utilize pulsed electroacoustic (PEA) instrumentation to investigate space charge accumulation of multifunctional composites and other insulation materials critical to robust high power transmission systems. Evaluating the space charge phenomena in dielectric materials will provide unique and fundamentally necessary data to determine the feasibility and lifetime of any high voltage insulation system. When electrical charge is injected into a solid dielectric, charge can accumulate and become trapped, leading to the failure of the insulation via breakdown or arcing events. This study will discuss the pulsed electroacoustic methodology and its use on evaluating various dielectric polymer and composite films.

pulsed electroacoustic↗

NASA NTRS2012

Characterization of Tantalum Polymer Capacitors

Overview Reviewed data Caution must be taken when accelerating test conditions Data not useful to establish an acceleration model Introduction of new failure mechanism skewing results Evidence of Anti-Wear-Out De-doping of polymer Decreased capacitance Increased ESR Not dielectric breakdown Needs further investigation Further investigation into tantalum polymer capacitor technology Promising acceleration model for Manufacturer A Possibility for use in high-reliability space applications with suitable voltage derating.

Voltage Acceleration↗

NASA NTRS2005

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

semiconducting↗

NASA NTRS1976

High voltage compliance constant current ballast

A ballast circuit employing a constant current diode and a vacuum tube that can provide a constant current over a voltage range of 1000 volts. The simple circuit can prove useful in studying voltage breakdown characteristics.

Rosenthal, L. A.↗

NASA NTRS2005

Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Xiao, Yegao↗

NASA NTRS1967

Vacuum ultraviolet source.

Low inductance three-electrode spark source for vacuum UV generating high degree ionization spectra

ULTRAVIOLET SPECTRUM↗

NASA NTRS2011

Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. The leakage current characterization and the failure analysis results suggest that most of these early avalanche failures are due to the extrinsic minor construction defects introduced during fabrication of BME capacitors. The concentration of the extrinsic defects must be reduced if the BME capacitors are considered for high reliability applications. There are two approaches that can reduce or prevent the occurrence of early failure in BME capacitors: (1) to reduce the defect concentration with improved processing control; (2) to prevent the use of BME capacitors under harsh external stress levels so that the extrinsic defects will never be triggered for a failure. In order to do so appropriate dielectric layer thickness must be determined for a given rated voltage.

Liu, David (Donhang)↗

NASA NTRS1978

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

An investigation of the high voltage pulse ignition characteristics of the 8 cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/micro sec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/micro sec) for the same starting conditions. Also described is an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

Wintucky, E. G.↗

NASA NTRS1978

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

An investigation of the high voltage pulse ignition characteristics of the 8-cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/microsec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/microsec) for the same starting conditions. The paper also describes an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

Wintucky, E. G.↗

NASA NTRS1978

Laboratory studies of electrical properties of insulating materials

The characteristics of satellites are influenced by the electrical properties of the dielectric exterior. It was found in simulated space environment tests that the electrical conductivities of dielectrics are affected as the result of interactions with various components of the environment. The degree to which the conductivity was affected varied with material. In some instances the changes found to occur could be used to advantage, particularly if they could be enhanced. For example, the increased electrical conductivity of Kapton resulting from solar illumination could be used to advantage to eliminate the charge storage leading to electrical breakdown during magnetic substorms. Similarly the relative immunity of FEP Teflon to change from response to the space environment makes it a logical choice as a solar cell cover in a high-voltage solar array.

Nanevicz, J. E.↗

NASA NTRS2022

Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs

We explore and elucidate physical failure mechanisms in a 4H-SiC, high voltage, superjunction (SJ) vertical DMOSFET from a single heavy ion strike using three-dimensional electro-thermal transient simulations. The single-event burnout (SEB) failure is thermal runaway from second breakdown, initiated by impact ionization and terminated with mesoplasma formation, at the center of the P-pillar/N+ substrate interface. We also demonstrate that the SEB performance of this SiC SJ DMOSFET is insensitive to the pillar width but sensitive to the strike location with ion strike at the P-pillar causing SEB at a lower blocking voltage than at the N-pillar. Compared to commercially available 1.2 kV blocking-rated non-SJ DMOSFETs, which have been demonstrated to survive SEB up to 525 V, the SJ DMOSFET increases SEB survival threshold voltage (VSEB) by a factor of 2.2, making it close to 1200 V, while the on-resistance is increased by only 11%. Using our recently developed figure of merit (FoM), which considers the trade-off between VSEB and on-state performance, we find that the SiC SJ DMOSFET achieves a FoM that is 14 times better, making it superior to conventional 1.2 kV SiC DMOSFETs for long-term radiation-tolerant operation in space applications.

Silicon Carbide↗

NASA NTRS2015

Evaluation of Case Size 0603 BME Ceramic Capacitors

High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

testing↗

NASA NTRS1980

Experiments on H2-O2MHD power generation

Magnetohydrodynamic power generation experiments utilizing a cesium-seeded H2-O2 working fluid were carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments were conducted in a high-field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, axial duct location within the magnetic field, generator loading, B-field strength, and electrode breakdown voltage were investigated. For the operating conditions of these experiments, it is found that the power output increases with the square of the B-field and can be limited by choking of the channel or interelectrode voltage breakdown which occurs at Hall fields greater than 50 volts/insulator. Peak power densities of greater than 100 MW/cu M were achieved.

Smith, J. M.↗

NASA NTRS1980

Experiments on H2-O2 MHD power generation

MHD power generation experiments utilizing a cesium-seeded H2-O2 working fluid have been carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments are conducted in a high-field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, axial duct location within the magnetic field, generator loading, B-field strength, and electrode breakdown voltage were investigated. For the operating conditions of these experiments it is found that the power output increases with the square of the B-field and can be limited by choking of the channel or interelectrode voltage breakdown which occurs at Hall fields greater than 50 volts/insulator.

Smith, J. M.↗

NASA NTRS2012

Plasma Actuators for Turbomachinery Flow Control

This report is Part I of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. The period of performance was January 1, 2007 to December 31, 2010. This report includes the project summary, a list of publications and reprints of the publications that appeared in archival journals. Part II of the final report includes a Ph.D. dissertation and is published separately as NASA/CR-2012-2172655. The research performed under this project was focused on the operation of surface dielectric barrier discharge (DBD) devices driven by high voltage, nanosecond scale pulses plus constant or time varying bias voltages. The main interest was in momentum production and the range of voltages applied eliminated significant heating effects. The approach was experimental supplemented by computational modeling. All the experiments were conducted at Princeton University. The project provided comprehensive understanding of the associated physical phenomena. Limitations on the performance of the devices for the generation of high velocity surface jets were established and various means for overcoming those limitations were proposed and tested. The major limitations included the maximum velocity limit of the jet due to electrical breakdown in air and across the dielectric, the occurrence of backward breakdown during the short pulse causing reverse thrust, the buildup of surface charge in the dielectric offsetting the forward driving potential of the bias voltage, and the interaction of the surface jet with the surface through viscous losses. It was also noted that the best performance occurred when the nanosecond pulse and the bias voltage were of opposite sign. Solutions include the development of partially conducting surface coatings, the development of a semiconductor diode inlaid surface material to suppress the backward breakdown. Extension to long discharge channels was studied and a new ozone imaging method developed for more quantitative determination of surface jet properties.

Miles, Richard, B↗

NASA NTRS1992

Evaluation of high temperature capacitor dielectrics

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Hammoud, Ahmad N.↗

NASA NTRS2000

Increasing Importance of Material Electrical Interaction with the Space Environment

The electrical properties of materials have always been important for spacecraft in charging environments. However, in recent years consideration of interactions of materials and systems with the plasma environment has become more and more important in spacecraft design. This has primarily been driven by independent factors including increase in power and high voltage power systems, operation of tethered satellites, and science requirements for electrostatic clean spacecraft. Increased need for power has led to increased operating voltages for spacecraft. The Upper Atmospheric Research Satellite (UARS) was one of the first to operate at near 100 V solar array potential and demonstrate that the spacecraft floated nearly the entire voltage negative of the ionospheric plasma. The high voltage, 160 V, of the solar arrays on the International Space Station (ISS) led to the requirement to have a plasma contactor to control structure potential relative to the local plasma. Issues such as sputtering, dielectric breakdown, capacitive energy storage in the structure, space debris impact induced arcs and other arcing mechanisms had to be addressed. Recently commercial satellites, driven to higher voltages for efficiency, have experienced arcing problems which led to severe, permanent power degradation. The first tethered satellite, Tethered Satellite System (TSS), was deployed from the Space Shuttle. A conductive coating was developed which provided a low resistivity and also the required solar absorptivity and emittance. Other tether systems are being designed which will have similar requirements but also long life and "bare tether" designs are also being built for flight experiments. The wire requires an electrically conductive coating with proper thermal control properties, which a bare wire doesn't possess. Increasing sophistication of scientific instruments and measurements which scientists want to make have led to increasing requirements for conducting thermal control coatings to provide electrostatic cleanliness. These issues, which are increasing the importance of electrical interaction of materials to the space environment, will be discussed in this paper as well as research into material development to meet thermal and electrical requirements and research to understand phenomena regarding such interactions.

Carruth, M. R., Jr.↗