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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Predicting Hall Thruster Operational Lifetime

A simple analytic model predicted Hall thruster channel erosion based on thruster geometry, operating conditions, and magnetic field configuration. This model relied on a one-dimensional representation of the plasma with a fixed ionization fraction and variable ion energies based on the magnetic field distribution. Sputtering was modeled as the result of elastic scattering of ions by neutrals within the channel. Not all scattered ions and neutrals were assumed to reach the channel walls as a result of additional subsequent scattering events. Incorporating this phenomenon resulted in a greater predicted decrease in erosion rate with time than predicted based only on geometric effects. Results from this model were compared to SPT 100 experimental erosion data.

Manzella, David↗
NASA NTRS2011

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Lauenstein, Jean-Marie↗
NASA NTRS2003

Magnetospheric Convection Electric Field Dynamics and Stormtime Particle Energization: Case Study of the Magnetic Storm of May 4,1998

It is shown that narrow channels of high electric field are an effective mechanism for injecting plasma into the inner magnetosphere. Analytical expressions for the electric field cannot produce these channels of intense plasma flow, and thus result in less entry and energization of the plasma sheet into near-Earth space. For the ions, omission of these channels leads to an underprediction of the strength of the stormtime ring current and therefore an underestimation of the geoeffectiveness of the storm event. For the electrons, omission of these channels leads to the inability to create a seed population of 10-100 keV electrons deep in the inner magnetosphere. These electrons can eventually be accelerated into MeV radiation belt particles.

Khazanov, George V.↗
NASA NTRS2003

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Alterovitz, S. A.↗
NASA NTRS1984

Electrostatic ion-cyclotron waves in magnetospheric plasmas Nonlocal aspects

The importance of the effect of the magnetic shear and the finite size of current channel on the electrostatic ion-cyclotron instability for the space plasmas is illustrated. A non-local treatment is used. When the channel width Lc, is larger than the shear length Ls, there is a large reduction in the growth rate along with a noteworthy reduction of the band of the unstable perpendicular wavelengths. For Lc less than or = Ls/10 the growth rate is not much altered from its local value, however for Lc/pi i less than or = 10 to the second power the growth rate starts falling below the local value and vanishes for Lc pi i. The non-local effects lead to enhanced coherence in the ion cyclotron waves. Previously announced in STAR as N84-14917

Ganguli, G.↗
NASA NTRS1971

Would shower cores or relativistic monopoles produce straight lightning.

The cause of leaders occasionally leaving old stroke channels is found to be atomic and molecular negative ions inside and outside old stroke channels, respectively. From this it is shown that the ionization in shower cores and possibly that in monopole paths would be capable of carrying a lightning leader which would then be straight and result in a straight return stroke. Artificial initiation of lightning shows that even thunderclouds without spontaneous lightning maintain large potential gradients over large areas for significant periods of time. Thundercloud conditions for straight lightning may be more favorable over ocean than land areas.

Tompkins, D. R., Jr.↗
NASA NTRS1984

Ion-molecule reactions in unsaturated hydrocarbons - Allene, propyne, diacetylene, and vinylacetylene

Ion-molecule reactions in allene, propyne, diacetylene, and vinylacetylene (1-buten-3-yne) have been studied at near-thermal energies by the technique of ion cyclotron resonance mass spectrometry. Rate coefficients and branching ratios are reported for the reactions of C3Hn(+) (n = 1-4) with allene and propyne and for the reactions of C4Hn(+) (n = 0-5) with diacetylene and vinylacetylene. Branching ratios are also given for the reactions of C4Hn(+), C5Hn and C6Hn(+) with propyne and for reactions of C6Hn(+) with diacetylene and vinylacetylene. More than 90 percent of the reactive channels lead to product ions having a larger carbon skeleton than the reactant ion. Evidence for ions with the same m/e ratio having differing reactivities was obtained for C3Hn(+), C6H7(+), and C7H7(+). Ion reaction sequences in allene and propyne were followed at higher pressures (0.0001 torr) to investigate secondary, tertiary, and higher order processes.

Anicich, V. G.↗
NASA NTRS2000

Photoionization and Recombination

Theoretically self-consistent calculations for photoionization and (e + ion) recombination are described. The same eigenfunction expansion for the ion is employed in coupled channel calculations for both processes, thus ensuring consistency between cross sections and rates. The theoretical treatment of (e + ion) recombination subsumes both the non-resonant recombination ("radiative recombination"), and the resonant recombination ("di-electronic recombination") processes in a unified scheme. In addition to the total, unified recombination rates, level-specific recombination rates and photoionization cross sections are obtained for a large number of atomic levels. Both relativistic Breit-Pauli, and non-relativistic LS coupling, calculations are carried out in the close coupling approximation using the R-matrix method. Although the calculations are computationally intensive, they yield nearly all photoionization and recombination parameters needed for astrophysical photoionization models with higher precision than hitherto possible, estimated at about 10-20% from comparison with experimentally available data (including experimentally derived DR rates). Results are electronically available for over 40 atoms and ions. Photoionization and recombination of He-, and Li-like C and Fe are described for X-ray modeling. The unified method yields total and complete (e+ion) recombination rate coefficients, that can not otherwise be obtained theoretically or experimentally.

Nahar, Sultana N.↗
NASA NTRS2023

Facility Effects on the Ion Characteristics of A 12.5-Kw Hall Thruster

During a laser-induced fluorescence test of a 12.5-kW magnetically-shielded Hall thruster, ion characteristics in the discharge channel and near the poles were measured as the background pressure and electrical configuration were varied. The acceleration zone of the thruster moved upstream by 2% and 10% of the channel length when the background pressure was raised to 1.8 times and 7 times the lowest achievable pressure, respectively. Examination of the characteristics of the ions near the pole covers suggested that as the background pressure decreased the pole covers may be experiencing more erosion. When operating at a discharge voltage of 300 V, the acceleration zone was observed to be at the same location for all electrical configurations. When operating at a discharge voltage of 600V, the acceleration zone was observed to move 3% of the channel length upstream when the thruster body was floated instead of tied to the cathode or grounded to the facility. Characteristics of the ions bombarding the pole covers did not vary across the tested electrical configurations. This observation combined with thruster body voltage measurements suggested that varying the electrical configuration only affected the thruster body sheath voltage and did not affect the plasma potential beyond the sheath.

Electric propulsion↗
NASA NTRS2004

Measurements of K Shell Emission of Highly Charged Ions with the XRS at EBIT

The XRS/EBIT is a 32 channel microcalorimeter spectrometer operating at the electron beam ion trap (EBIT) facility at Lawrence Livermore National Laboratory. The system contains a flight candidate detector array from the XRS instrument for the Astro-E2 mission. The detector array in the XRS/EBIT is functionally identical to the flight array integrated into the XRS instrument and benefits from the enormous amount of calibration data from the XRS program. Since the XRSEBIT was upgraded with the new detector array in October 2003, the system has been used for a number of experiments including a survey of the K shell emission from He-like and H-like O, Ne, Ar, Fe, Ni and Kr as well as for L shell emission to measure the 3C/3D line ratio in Ni. Here we present some basic operational parameters of the instrument as well as direct excitation and simulated maxwellian spectra of He-like and E-like Fe. We show that the XRS instrument can resolve the Lyal and Lya2 lines from each other as well as from the dielectronic recombination satellites in thermal H-like Fe. We also show exactly how well the XRS instrument on Astro-E2 will resolve the thermal He-like triplet in collisionally excited Fe. This work was funded under NASA's Research Opportunities in Space Science program.

Porter, F. Scott↗
NASA NTRS1981

Curved-channel microchannel array plates

The microchannel array plate (MCP) is a photoelectric detector with an imaging capability comparable to that of a photographic plate. Recently MCPs in which the channels are curved to inhibit ion feedback have become available. These devices represent a major advance in MCP technology, since a single curved-channel MCP can be operated stably at high gain in the pulse-counting mode without any of the problems of stability of response or short lifetime reported for 'chevron' MCP detectors. Attention is given to the mode of operation of channel electron multipliers (CEM) and MCP, curved-channel MCP, test procedures, and performance characteristics. The accumulated test data show that the fundamental operating characteristics of the curved-channel MCP are directly related to those for the CEM.

Timothy, J. G.↗
NASA NTRS1979

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗
NASA NTRS1981

Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

Koch, T. L.↗
NASA NTRS2010

Electronic drive and acquisition system for mass spectrometry

The present invention discloses a mixed signal RF drive electronics board that offers small, low power, reliable, and customizable method for driving and generating mass spectra from a mass spectrometer, and for control of other functions such as electron ionizer, ion focusing, single-ion detection, multi-channel data accumulation and, if desired, front-end interfaces such as pumps, valves, heaters, and columns.

Schaefer, Rembrandt Thomas↗
NASA NTRS2005

In Situ Electrochemical Deposition of Microscopic Wires

A method of fabrication of wires having micron and submicron dimensions is built around electrochemical deposition of the wires in their final positions between electrodes in integrated circuits or other devices in which the wires are to be used. Heretofore, nanowires have been fabricated by a variety of techniques characterized by low degrees of controllability and low throughput rates, and it has been necessary to align and electrically connect the wires in their final positions by use of sophisticated equipment in expensive and tedious post-growth assembly processes. The present method is more economical, offers higher yields, enables control of wire widths, and eliminates the need for post-growth assembly. The wires fabricated by this method could be used as simple electrical conductors or as transducers in sensors. Depending upon electrodeposition conditions and the compositions of the electroplating solutions in specific applications, the wires could be made of metals, alloys, metal oxides, semiconductors, or electrically conductive polymers. In this method, one uses fabrication processes that are standard in the semiconductor industry. These include cleaning, dry etching, low-pressure chemical vapor deposition, lithography, dielectric deposition, electron-beam lithography, and metallization processes as well as the electrochemical deposition process used to form the wires. In a typical case of fabrication of a circuit that includes electrodes between which microscopic wires are to be formed on a silicon substrate, the fabrication processes follow a standard sequence until just before the fabrication of the microscopic wires. Then, by use of a thermal SiO-deposition technique, the electrodes and the substrate surface areas in the gaps between them are covered with SiO. Next, the SiO is electron-beam patterned, then reactive-ion etched to form channels having specified widths (typically about 1 m or less) that define the widths of the wires to be formed. Drops of an electroplating solution are placed on the substrate in the regions containing the channels thus formed, then the wires are electrodeposited from the solution onto the exposed portions of the electrodes and into the channels. The electrodeposition is a room-temperature, atmospheric-pressure process. The figure shows an example of palladium wires that were electrodeposited into 1-mm-wide channels between gold electrodes.

Yun, Minhee↗
NASA NTRS2006

Hybrid MD-Nernst Planck Model of Alpha-hemolysin Conductance Properties

Motivated by experiments in which an applied electric field translocates polynucleotides through an alpha-hemolysin protein channel causing ionic current transient blockade, a hybrid simulation model is proposed to predict the conductance properties of the open channel. Time scales corresponding to ion permeation processes are reached using the Poisson-Nemst-Planck (PNP) electro-diffusion model in which both solvent and local ion concentrations are represented as a continuum. The diffusion coefficients of the ions (K(+) and Cl(-)) input in the PNP model are, however, calculated from all-atom molecular dynamics (MD). In the MD simulations, a reduced representation of the channel is used. The channel is solvated in a 1 M KCI solution, and an external electric field is applied. The pore specific diffusion coefficients for both ionic species are reduced 5-7 times in comparison to bulk values. Significant statistical variations (17-45%) of the pore-ions diffusivities are observed. Within the statistics, the ionic diffusivities remain invariable for a range of external applied voltages between 30 and 240mV. In the 2D-PNP calculations, the pore stem is approximated by a smooth cylinder of radius approx. 9A with two constriction blocks where the radius is reduced to approx. 6A. The electrostatic potential includes the contribution from the atomistic charges. The MD-PNP model shows that the atomic charges are responsible for the rectifying behaviour and for the slight anion selectivity of the a-hemolysin pore. Independent of the hierarchy between the anion and cation diffusivities, the anionic contribution to the total ionic current will dominate. The predictions of the MD-PNP model are in good agreement with experimental data and give confidence in the present approach of bridging time scales by combining a microscopic and macroscopic model.

Cozmuta, Ioana↗
NASA NTRS2019

Variation in Ion Acceleration Characteristics of the HERMeS Hall Thruster During Magnetic Optimization

To reduce design risks for future magnetically shielded Hall thrusters, a test was performed on the HERMeS to obtain data for optimizing the effect of magnetic shielding. As a part of this test, laser-induced fluorescence velocimetry was used to characterize the variations in the ion acceleration with different magnetic configurations. Four magnetic configurations representing varying amounts of magnetic shielding between the high-energy discharge plasma and the discharge channel walls were tested. The ion velocity data points to the possibility that different plasma-wall interaction physics applies to a magnetically shielded thruster than a non-shielded thruster. The transition point is very prominent and can potentially be used to test whether a thruster is fully magnetically shielded.

Hall thrusters↗