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At least 145 records · Page 8

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NASA NTRS2007

Quantifying Low Energy Proton Damage in Multijunction Solar Cells

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.

Messenger, Scott R.↗

NASA NTRS1991

Charge collected by diffusion from an ion track under mixed boundary conditions

Charge-carrier diffusion from an ion track in a silicon substrate at least a few hundred microns thick is analyzed. The substrate upper surface is treated as reflective except for a small section, intended to represent a reverse-biased junction, which is treated as a sink. Total charge collected by the sink is calculated by assuming transport to be governed by an ambipolar diffusion equation with temporally constant and spatially uniform carrier lifetime and diffusion coefficient. Present results apply to a normally incident track but could easily be generalized to arbitrary track direction. The collected charge is found to depend on track length and on the electrostatic capacitance, rather than the area, of the sink. Theoretical predictions are compared to the results of a numerical simulation called the Poisson and Continuity Equation Solver (PISCES) for three cases and are found to agree within a factor of two in the worst case.

Edmonds, Larry D.↗

NASA NTRS2012

Prognostics Approach for Power MOSFET Under Thermal-Stress

The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is dieattachment degradation, typical for discrete devices with leadfree solder die attachment. It has been determined that dieattach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real sensors (no simulated behavior), we are attempting to assess how such algorithm behaves under realistic conditions.

Power MOSFET PHM↗

NASA NTRS1982

Sub-Kelvin temperatures in space

It is pointed out that the use of temperatures below 1 K in space would provide a significant improvement in several areas of research. The sensitivity of bolometers, for instance, can be improvead by as much as a factor of 50, if the operating temperature is lowered from 1.5 K to 0.3 K. A decrease in temperature to 0.1 K can provide even an improvement up to three orders of magnitude. Detectors based on the utilization of such improvements could be employed for far-infrared (100-1000 microns) photometry and spectroscopy in the low-background conditions of space. The study of critical phenomena in He-3/He-4 mixtures is also of interest, taking into account investigations at the tricritical point (0.87 K), which represents the junction of a first-order and a second-order transition. Tests in space are needed because gravity-related effects make adequate tests on earth impossible. He-3 refrigeration can be used to attain temperatures below 1 K. Adiabatic demagnetization can produuce temperatures below 0.3 K.

Kittel, P.↗

NASA NTRS1995

An efficient and accurate model of the coax cable feeding structure for FEM simulations

An efficient and accurate coax cable feed model is proposed for microstrip or cavity-backed patch antennas in the context of a hybrid finite element method (FEM). A TEM mode at the cavity-cable junction is assumed for the FEM truncation and system excitation. Of importance in this implementation is that the cavity unknowns are related to the model fields by enforcing an equipotential condition rather than field continuity. This scheme proved quite accurate and may be applied to other decomposed systems as a connectivity constraint. Comparisons of our predictions with input impedance measurements are presented and demonstrate the substantially improved accuracy of the proposed model.

Gong, Jian↗

NASA NTRS1982

Changes in osteoblastic activity due to simulated weightless conditions

Using histochemistry and electron microscopy, the reduced bone formation which occurs in the hypokinetic, orthostatically treated adult rat has been studied. The two major changes noted occurred in the osteoblast population, indicated by a reduced alkaline phosphatase activity and reduced numbers of gap junctions between cells. These results were most noticeable in the periosteum and endosteum of the long bones. Changes in osteoblasts lining the surface of trabecular bone were not as evident. These results indicate that the cells lining the surfaces of weight bearing bones are most affected by hypokinesia and this reduction in cellular activity may be a mechanically induced effect.

Doty, S. B.↗

NASA NTRS1972

Development of GaAs solar cells

Calculations of GaAs solar cell output parameters were refined and a computer model was developed for parameter optimization. The results were analyzed to determine the material characteristics required for a high efficiency solar cell. Calculated efficiencies for a P/N cell polarity are higher than an N/P cell. Both cell polarities show efficiency to have a larger dependence on short circuit current than an open circuit voltage under nearly all conditions considered. The tolerances and requirements of a cell fabrication process are more critical for an N/P type than for a P/N type cell. Several solar cell fabrication considerations relative to junction formation using ion implantation are also discussed.

Mcnally, P. J.↗

NASA NTRS1989

Design, development and applications of novel techniques for studying surface mechanical properties

Research is reviewed for the adhesion, friction, and micromechanical properties of materials and examples of the results presented. The ceramic and metallic materials studied include silicon carbide, aluminum oxide, and iron-base amorphous alloys. The design and operation of a torsion balance adapted for study of adhesion from the Cavendish balance are discussed first. The pull-off force (adhesion) and shear force (friction) required to break the interfacial junctions between contacting surfaces of the materials were examined at various temperatures in a vacuum. The surface chemistry of the materials was analyzed by X-ray photoelectron spectroscopy. Properties and environmental conditions of the surface regions which affect adhesion and friction-such as surface segregation, composition, crystal structure, surface chemistry, and temperature were also studied.

Miyoshi, Kazuhisa↗

NASA NTRS1993

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Goebel, John H.↗

NASA NTRS1991

Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.

Faur, Maria↗

NASA NTRS1992

Parallel arrays of Josephson junctions for submillimeter local oscillators

In this paper we discuss the influence of the DC biasing circuit on operation of parallel biased quasioptical Josephson junction oscillator arrays. Because of nonuniform distribution of the DC biasing current along the length of the bias lines, there is a nonuniform distribution of magnetic flux in superconducting loops connecting every two junctions of the array. These DC self-field effects determine the state of the array. We present analysis and time-domain numerical simulations of these states for four biasing configurations. We find conditions for the in-phase states with maximum power output. We compare arrays with small and large inductances and determine the low inductance limit for nearly-in-phase array operation. We show how arrays can be steered in H-plane using the externally applied DC magnetic field.

Pance, Aleksandar↗

NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the "flat-spot" (FS) power loss phenomenon observed in silicon solar cells operating deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallurization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the 'flat-spot' power-loss phenomenon observed in silicon solar cells operating under deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

NASA NTRS2006

Unsteady Flow Simulation of High-speed Turbopumps

Computation of high-speed hydrodynamics requires high-fidelity simulation to resolve flow features involving transient flow, cavitation, tip vortex and multiple scales of unsteady fluctuations. One example of this type in aerospace is related to liquid-fueled rocket turbopump. Rocket turbopumps operate under severe conditions at very high rotational speeds typically at thousands of rpm. For example, the Shuttle orbiter low-pressure-fuel-turbopump creates transient flow features associated with reverse flows, tip clearance effects, secondary flows, vortex shedding, junction flows, and cavitation effects. Flow unsteadiness originating from the orbiter Low-Pressure-Fuel-Turbopump (LPFTP) inducer is one of the major contributors to the high frequency cyclic loading that results in high cycle fatigue damage to the flow liners just upstream of the LPFTP. The reverse flow generated at the tip of the inducer blades travels upstream and interacts with the bellows cavity. Simulation procedure for this type high-speed hydrodynamic problems requires a method for quantifying multi-scale and multi-phase flow as well as an efficient high-end computing strategy. The current paper presents a high-fidelity computational procedure for unsteady hydrodynamic problems using a high-speed liquid-fueled rocket turbopump.

Kiris, Cetin C.↗

NASA NTRS2005

Design and Performance of the MER (Mars Exploration Rovers) Solar Arrays

The Mars Exploration Rovers (MER) program posed a significant engineering and technology challenge. Now that the Rovers have operated beyond their original design life of three months by nearly a factor of four it is clear that the challenge was met and far exceeded. A key to the success of MER has been the enhanced power provided by the cruise and Rover solar arrays. Benefiting from a nearly 50% improvement in cell efficiency compared to the single junction GaAs cells used on Pathfinder, the MER designs were subject to many constraints both in design and in operation. These constraints included limited available panel area, changing illumination levels and temperatures, and variable shadowing, atmospheric conditions and dust accumulation for the rovers. This paper will discuss those constraints and their impact on the design. In addition, flight data will be provided to assess the performance achieved during the mission.

(Mars Exploration Rovers (MER)↗

NASA NTRS1978

Trends and techniques for space base electronics

A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time.

Gassaway, J. D.↗

NASA NTRS2017

DPW-VI Results Using FUN3D with Focus on k-kL-MEAH2015 (k-kL) Turbulence Model

The Common Research Model wing-body configuration is investigated with the k-kL-MEAH2015 turbulence model implemented in FUN3D. This includes results presented at the Sixth Drag Prediction Workshop and additional results generated after the workshop with a nonlinear Quadratic Constitutive Relation (QCR) variant of the same turbulence model. The workshop provided grids are used, and a uniform grid refinement study is performed at the design condition. A large variation between results with and without a reconstruction limiter is exhibited on "medium" grid sizes, indicating that the medium grid size is too coarse for drawing conclusions in comparison with experiment. This variation is reduced with grid refinement. At a fixed angle of attack near design conditions, the QCR variant yielded decreased lift and drag compared with the linear eddy-viscosity model by an amount that was approximately constant with grid refinement. The k-kL-MEAH2015 turbulence model produced wing root junction flow behavior consistent with wind tunnel observations.

Abdol-Hamid, K. S.↗

NASA NTRS2010

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Patterson, Richard L.↗