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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Operando Contactless EFISH Study of the Rate-Determining Step of Light-Driven Water Oxidation on TiO 2 Photoanodes

For many slow solar-fuel-forming reactions, the accumulation of photogenerated minority carriers on the photoelectrode surface leads to light-induced band edge unpinning, affecting the junction properties by decreasing band bending in the semiconductor space charge layer and increasing the driving force of surface reactions in the electric double layer. In this study, we demonstrate a contactless operando electric field-induced second harmonic generation (EFISH) method for measuring the band bending change (δΔΦ SCR L ) on photoelectrodes upon photoexcitation. For ndoped rutile TiO 2 water oxidation photoanodes at pH 7, δΔΦ SCR L increases at more positive potentials or higher illumination power density until it reaches saturation values. We show that under fast mass transport conditions, δΔΦ SCR L is exclusively attributed to the accumulated charged rate-determining species that can be regarded as temporary surface states, and the relationship between the photocurrent and δΔΦ SCR L can be well modeled by assuming that hole trap states function as the reaction center. Kinetic isotope experiments identify proton-coupled electron transfer as the rate-determining step and suggest a possible chemical nature of the key intermediate. We demonstrate that light-induced band edge unpinning is a beneficial feature under high illumination conditions for oxygen evolution reaction on TiO 2 because it maintains the photon-to-current conversion efficiency by enhancing the surface reaction driving force, shedding light on the actual device application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Attribution of heterogeneous stress distributions in low-grain polycrystals under conditions leading to damage

In high-purity polycrystalline metallic materials, voids tend to favor grain boundaries as nucleation sites due to the elevated stress states produced by granular interactions and the weakened grain boundary from the relative atomic disorder. To quantify the key factors of this elevated stress state, simple compression of a small multi-grain cylinder of body-centered cubic tantalum was simulated using a single crystal plasticity model that incorporates non-Schmid effects. Four increasingly complex synthetic microstructures were created to tractably incorporate grain boundary interactions, and a statistically significant number of combinations were performed by varying the initial crystallographic orientations of the microstructure. Most of these simulations produce the maximum von Mises stress on a grain boundary and less frequently at the multi-grain junctions. To build a statistical model for the maximum von Mises stress at the grain boundary, physically based features that could contribute to the elevated stress state were selected. Then, a learning algorithm based on information theory was used to identify which of these features contributed the most information to the data set. The identified features include a grain’s propensity to accommodate both elastic and plastic deformations and their directional components. The misalignment of the direction of each grain’s mechanical response was found to be strongly correlated to the magnitude of the stress near the grain boundary. For all of the synthetic microstructures, the statistical models produce a residual distribution that is nearly Gaussian with a variance of, at most, 10% of the prior distribution. The successful performance of the statistical model implies the correct identification of the physical features that cause severe stress localization in polycrystalline materials. The statistical models constructed here can be used to formulate a physically motivated void nucleation model which is sensitive to a microstructure’s propensity to produce elevated stress states. As a result, these statistical models also enable the design of material microstructures, in which the crystallographic orientation is chosen to resist void nucleation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of Grazing Duration and Environment on Soil Carbon in Reclaimed Uranium Mines Tailings: A Region Specific Study

ABSTRACT Grassland ecosystems, which cover over one‐third of the Earth's land area, store 10%–30% of global soil carbon (C). However, these ecosystems face substantial impacts from human activities, including mining. This study investigates the spatial distribution of soil C and related environmental factors in reclaimed grasslands on former uranium mine sites in Wyoming. We hypothesized that grazing duration and environmental factors would influence soil C levels. Interactions between topography, vegetation diversity, soil properties, and soil C in the context of grazing management in both natural and reclaimed grasslands from a wide range of periods from 1 year to 100 years were analyzed using geographically weighted regression models. Data collected from 2022 to 2023 showed that total carbon was consistently higher in natural grasslands (1.2%–4.9%) than in reclaimed grasslands (0.8%–1.3%). Additionally, soil C was significantly higher in natural grasslands grazed for 1 year compared to those grazed for 100 years. In contrast, reclaimed grasslands had lower soil C in areas grazed for 1 year compared to those grazed for 7 or 14 years. The absolute values of coefficients from environmental covariates indicated that areas grazed for a shorter duration (~1 year) were more influenced by biotic and abiotic factors than areas grazed for longer periods (> 7 years). Our findings show moderate grazing increases the resiliency of grassland ecosystems when grazed 7 years or longer and acknowledge the roles of topographic, soil, and vegetative factors in enhancing soil C concentration and developing sustainable land management practices in rangeland conditions.

Shilpakar, Chandan [Department of Plant Sciences U↗
DOE OSTI2023

Bovine Rectoanal Junction In Vitro Organ Culture Model System to Study Shiga Toxin-Producing Escherichia coli Adherence

Studies evaluating the interactions between Shiga toxin-producing Escherichia coli O157:H7 (O157) and the bovine recto–anal junction (RAJ) have been limited to either in vitro analyses of bacteria, cells, or nucleic acids at the RAJ, providing limited information. Alternatively, expensive in vivo studies in animals have been conducted. Therefore, our objective was to develop a comprehensive in vitro organ culture system of the RAJ (RAJ-IVOC) that accurately represents all cell types present in the RAJ. This system would enable studies that yield results similar to those observed in vivo. Pieces of RAJ tissue, obtained from unrelated cattle necropsies, were assembled and subjected to various tests in order to determine the optimal conditions for assaying bacterial adherence in a viable IVOC. O157 strain EDL933 and E. coli K12 with known adherence differences were used to standardize the RAJ-IVOC adherence assay. Tissue integrity was assessed using cell viability, structural cell markers, and histopathology, while the adherence of bacteria was evaluated via microscopy and culture methods. DNA fingerprinting verified the recovered bacteria against the inoculum. When the RAJ-IVOC was assembled in Dulbecco’s Modified Eagle Medium, maintained at a temperature of 39 °C with 5% CO 2 and gentle shaking for a duration of 3–4 h, it successfully preserved tissue integrity and reproduced the expected adherence phenotype of the bacteria being tested. The RAJ-IVOC model system provides a convenient method to pre-screen multiple bacteria-RAJ interactions prior to in vivo experiments, thereby reducing animal usage.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Majorana pair based qubits for fault tolerant quantum computing architecture using superconducting gold surface states

Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers. Here we disclose a metal-based heterostructure platform to produce these Majorana zero modes which utilizes the surface states of certain metals in combination with a ferromagnetic insulator and a superconductor. This platform has the advantage of having a robust energy scale and the possibility of realizing complex circuit designs using lithographic methods. The Majorana zero modes are interrogated using planar tunnel junctions and electrostatic gates to selectively tunnel into designated pairs of Majorana zero modes. We give example of qubit designs and circuits that are particularly suitable for the metal-based heterostructures.

Moodera, Jagadeesh S.↗
DOE OSTI2021

Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS 2 interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS 2 induces large strain of ~5% in the MoS 2 which coupled with charge transfer leads to degenerate doping of the MoS 2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS 2 -In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS 2 /Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

In situ temperature measurement of a deforming interface with thermoelectricity

Accurate temperature measurement is critical to understanding the thermomechanical conditions and microstructural evolution that materials experience during severe plastic deformation (SPD). Others have previously measured the interface between a non-deforming tool and metal workpiece using thermocouples, infrared measurement, and the thermoelectric principle. Measuring temperature within the deforming material itself, especially at a high-shear deforming interface, has proven to be extremely difficult, thus limiting the application of these measurements to fundamental SPD research. In this study, the thermoelectric principle is used to directly measure temperature at the interface between copper and nickel billets undergoing SPD. This is done by utilizing the deforming materials themselves as two halves of a thermocouple junction. The spatial resolution of this measurement is shown via microscopy to be less than 1 micron. Temperature changes are sensed almost instantly, with time delays on the order of the data logger frequency (0.01 seconds). Process variations that are both very brief (<0.05 seconds) and minute (<3°C) are able to be detected by this method.

Taysom, Brandon Scott↗
DOE OSTI2025

A Conjugated Oligoelectrolyte Exhibiting Room Temperature Spin-Correlated Radical Pair Character for Biological Sensing

We report a water-soluble conjugated oligoelectrolyte (COE) composed of carbazole-benzophenone, COE-CbzBP, that exhibits photogenerated spin-correlated radical pair (SCRP) behavior sensitive to static electric fields from DNA but not from lipid bilayers. The SCRP forms from a thermally activated, spin-polarized state enabled by partial π-conjugation disruption at the donor–acceptor (carbazole-benzophenone) nitrogen–carbon (N–C) junction, which facilitates a twisted intramolecular charge-transfer (TICT) geometry. This state minimizes the singlet–triplet energy gap (ΔE ST = 0.12 eV), radical–pair exchange coupling (J RP ∼ ΔE ST /2), and charge separation free energy (ΔG CS ) in both DNA (−0.19 eV) and lipid bilayers (−0.55 eV). Room-temperature continuous-wave electron paramagnetic resonance (CW-EPR) reveals a photogenerated spin-polarized singlet for COE-CbzBP that splits upon DNA association, consistent with modulation of J RP and hyperfine coupling (A x ), presumably via electric field-spin coupling. No spin-polarized signal was observed under dark, cryogenic conditions, or in liposomes, but was quenched by the spin trap 4-POBN. Transient absorption and spectroelectrochemistry confirmed magnetic-field sensitive long-lived excited-state absorption features attributed to charge-separated states 3 [Cbz •+ -BP •– ]*, which were lengthened by DNA, and quenched in lipid bilayers and 4-POBN. Quantum chemical simulations show that planar geometries (lipid-like) increase ΔE ST by 0.31 eV compared to TICT-optimized structures. This geometry-dependent modulation explains the absence of SCRP signatures in rigid environments, underscoring the importance of TICT states, minimized ΔE ST , and favorable ΔG CS for achieving room-temperature SCRP generation. These findings establish design principles for TICT-enabled molecules exhibiting qubit-like behavior that operate under ambient and biologically relevant conditions, with direct implications for quantum information science (QIS).

Aromatic compounds↗
DOE OSTI2024

Image-based modeling of coupled electro-chemo-mechanical behavior of Li-ion battery cathode using an interface-modified reproducing kernel particle method

Abstract An interface-modified reproducing kernel particle method (IM-RKPM) is introduced in this work to allow for a direct model construction from image pixels of heterogeneous polycrystalline Li-ion battery microstructures. The interface-modified reproducing kernel (IM-RK) approximation is constructed through scaling of a kernel function by a regularized distance function in conjunction with strategic placement of interface node locations. This leads to RK shape functions with either weak or strong discontinuities across material interfaces, suitable for modeling various interface mechanics. With the placement of a triple junction node and distance-based scaling of kernel functions, the resulting IM-RK shape function also possesses proper discontinuities at the triple junctions. This IM-RK approximation effectively remedies the well-known Gibb’s oscillation in the smooth approximation of discontinuities. Different from the conventional meshfree approaches for interface discontinuities, this IM-RK approach is done without additional degrees of freedom associated with the enrichment functions, and it is formulated with the standard procedures in the RK shape function construction. This work focuses on identifying the accuracy and convergence properties of IM-RKPM for modeling the coupled electro-chemo-mechanical system. A linear patch test is formulated and numerically tested for the electro-chemo-mechanical coupled problem with a Butler–Volmer boundary condition representing the physical conditions in Li-ion battery microstructures. This is followed by verification of the optimal rates of convergence of IM-RKPM for solving the coupled problem with higher order solutions. The image-based modeling of Li-ion battery microstructures in the numerical examples demonstrates the applicability of the proposed method to realistic Li-ion battery materials modeling.

25 ENERGY STORAGE↗
DOE OSTI2024

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in Co Fe B / Mg O -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

Safeer, C. K. (ORCID:0000000323969730)↗
DOE OSTI2024

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density. The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

CdSe remnant↗
DOE OSTI2025

Photosynthesis of CO from CO 2 with an iron polypyridyl catalyst at a passivated silicon photoelectrode

A first-row transition metal catalyst, [Fe(tpy)(Mebim-py)(NCCH 3 )] 2+ (tpy = 2,2′:6′,2′′-terpyridine, Mebim-py = 1-methylbenzimidazol-2-ylidene-3-(2′-pyridine)) mediates CO 2 reduction to CO at passivated p-Si photoelectrodes with applied potentials 240 mV positive of the standard CO 2 /CO reduction potential. The molecular catalyst's selectivity for CO was retained under photoelectrochemical conditions, with negligible direct proton reduction promoted by the photoelectrode. The faradaic efficiency for CO (44 ± 6%) was slightly enhanced relative to the catalyst performance in the dark (33%). A photosynthetic cell based on this photocathode system, coupled with ferrocene oxidation at the anode, successfully operated at a cell voltage of −1.2 V. The photovoltage generated by illumination of p-Si–CH 3 met and surpassed the potential required for CO 2 reduction when coupled with ferrocene oxidation. By leveraging a low-overpotential CO 2 reduction electrocatalyst, a photo-assisted electrochemical efficiency of 0.15% and applied bias photon-to-current efficiency of 0.05% was achieved for this single-junction cell, ultimately storing 46 kJ mol −1 (11 kcal mol −1 ) of photon energy.

Carbon Dioxide Reduction↗
DOE OSTI2026

Nonequilibrium defect-phase nanostructures stabilized by irradiation in undersaturated Ni-Si nanocrystalline alloy

Nanocrystalline thin films of the undersaturated alloy Ni-8.5 at% Si were subjected to 2 MeV Ti irradiation at temperatures ranging from 450˚C to 550˚C. Correlative microscopy combining transmission electron microscopy (TEM), scanning-TEM and atom probe tomography (APT revealed that large dose irradiation at 450˚C of samples with initial grain sizes below 100 nm stabilized a novel nanostructure which surprisingly contained three co-existing phases, the γ face-centered-cubic (FCC) matrix, γ' L12 ordered precipitates on intragranular dislocation loops and Ni 31 Si 12 precipitates at triple junctions (TJs). In contrast, irradiation at 550˚C and irradiation of larger grain-size samples at 450˚C only produced a γ-γ' two-phase coexistence. Analysis of the three-phase nanostructure and phase field simulations indicates that radiation-induced segregation is most pronounced at TJs, thus triggering the formation of Ni 31 Si 12 precipitates. These incoherent precipitates, in turn, are expected to stabilize the grain size under irradiation. The results are generalized using the concept of driven defect-phases. It is suggested that the stabilization of driven defect-phases may impart radiation resilience by providing localized relaxation modes to the microstructure evolution during and after temporary perturbations in irradiation conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2020

Alternating Current Photovoltaic Effect

It is well known that the photovoltaic effect produces a direct current (DC) under solar illumination owing to the directional separation of light-excited charge carriers at the p–n junction, with holes flowing to the p-side and electrons flowing to the n-side. In this study, we found that apart from the DC generated by the conventional p–n photovoltaic effect, there is another new type of photovoltaic effect that generates alternating current (AC) in the nonequilibrium states when the illumination light periodically shines at the junction/interface of materials. The peak current of AC at high switching frequency can be much higher than that from DC. The AC cannot be explained by the established mechanisms for conventional photovoltaics; instead, it is suggested to be a result of the relative shift and realignment between the quasi-Fermi levels of the semiconductors adjacent to the junction/interface under the nonequilibrium conditions, which results in electron flow in the external circuit back and forth to balance the potential difference between two electrodes. By virtue of this effect, the device can work as a high-performance broadband photodetector with extremely high sensitivity under zero bias; it can also work as a remote power source providing extra power output in addition to the conventional photovoltaic effect.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗
DOE OSTI2023

In situ amplification of spin echoes within a kinetic inductance parametric amplifier

The use of superconducting microresonators together with quantum-limited Josephson parametric amplifiers has enhanced the sensitivity of pulsed electron spin resonance (ESR) measurements by more than four orders of magnitude. So far, the microwave resonators and amplifiers have been designed as separate components due to the incompatibility of Josephson junction–based devices with magnetic fields. This has produced complex spectrometers and raised technical barriers toward adoption of the technique. Here, we circumvent this issue by coupling an ensemble of spins directly to a weakly nonlinear and magnetic field–resilient superconducting microwave resonator. We perform pulsed ESR measurements with a 1-pL mode volume containing 6 × 10 7 spins and amplify the resulting signals within the device. When considering only those spins that contribute to the detected signals, we find a sensitivity of 2.8 x 10 3 spins / $\sqrt{Hz}$ for a Hahn echo sequence at a temperature of 400 mK. In situ amplification is demonstrated at fields up to 254 mT, highlighting the technique’s potential for application under conventional ESR operating conditions.

42 ENGINEERING↗
DOE OSTI2024

Long-Term Performance of Ag/AgCl Reference Electrodes for Corrosion Potential Monitoring in Radioactive Tank Waste at the Hanford Site

This work studied the exposure effects of radioactive tank waste on the long-term performance of single junction Ag/AgCl reference electrodes for corrosion potential monitoring at the Hanford Site. Electrodes from three manufacturers with very different designs were studied using open-circuit potential and electrochemical impedance measurements in radioactive tank waste. Post-test analyses were conducted on some failed electrodes using destructive and nondestructive techniques. The intrusion of the aggressive and radioactive chemicals in tank waste through the porous frit materials was the primary mechanism that led to the clogging of frit, physical and chemical degradation of AgCl bonded to Ag wire, and alteration of the internal electrolyte. Radiolytic chemical species such as H2O2 and HNO3 may have also induced the degradation of the Ag wire. The extent of electrode degradation and failure probability highly depended on the electrode design and environmental conditions. Chemicals in tank waste had stronger effects than radiation on the long-term performance of the Ag/AgCl reference electrodes.

Materials Science↗