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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
DOE OSTI2022

Record Efficiency Multijunction Solar Cells with Strain-Balanced Quantum Well Superlattices

The absorption edge of a GaAs solar cell can be tuned to longer wavelengths with strain-balanced quantum wells, as an alternative to metamorphic epitaxy. For one-sun photovoltaic applications, an optimum bandgap for both single and multijunction solar cells is near the broad water absorption peak at 930 nm and can be accessed by a Ga0.9In0.1As alloy. This alloy is strained with respect to the GaAs substrate, and so only very thin ~10 nm layers can be grown without relaxation via dislocation formation. However, solar cells require significant thickness for complete absorption of the incoming solar spectrum, requiring many such layers. We have designed quantum well superlattices with up to 300 sets of carefully tuned strain-balanced GaInAs/GaAsP pairs by limiting composition modulation and material degradation. We have incorporated quantum well solar cells into multijunction devices to achieve record 32.9% two-junction and 39.5% three-junction solar cells under standard one-sun illumination. We will describe the physics of the quantum well devices and the growth conditions that lead to sharp interfaces and good material quality, as well as the characterization of the efficiencies.

GaAs↗
NASA NTRS1984

Diffused junction p(+)-n solar cells in bulk GaAs. I Fabrication and cell performance

This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.

Bhat, I.↗
DOE OSTI2023

Optimization of La 2–x Sr x CuO 4 Single Crystal Film Growth via Molecular Beam Epitaxy

Atomic layer-by-layer molecular beam epitaxy (ALL-MBE) combined with ozone is one of the best methods to fabricate single-crystal thin films of complex oxides. Cuprate such as La 2-x Sr x CuO 4 (LSCO) is a representative complex-oxide high-temperature superconductor (HTS) material. Our group utilizes this method to produce high-quality single-crystal HTS films with atomically smooth surfaces and interfaces. In addition, ALL-MBE enables us to engineer multilayer heterostructures with atomic precision. This allows the fabrication of tunnel junctions, various nanostructures, and other HTS devices of interest for superconducting electronics. We have synthesized over three thousand LSCO thin films in the past two decades. These films’ structural and electronic properties have been studied and characterized by various methods. Here, we distill the extensive experience we accumulated into a step-by-step protocol to fabricate atomically perfect LSCO films. The recipe includes substrate preparation, ozone generation and distillation, source calibration, the in situ monitoring of the film synthesis, post-growth annealing, and ex situ characterization. It discloses a reproducible way to fabricate single-crystal LSCO films for basic research and HTS electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Superconducting Qubits above 20 GHz Operating over 200 mK

Current state-of-the-art superconducting microwave qubits are cooled to extremely low temperatures to avoid sources of decoherence. Higher qubit operating temperatures would significantly increase the cooling power available, which is desirable for scaling up the number of qubits in quantum computing architectures and integrating qubits in experiments requiring increased heat dissipation. To operate superconducting qubits at higher temperatures, it is necessary to address both quasiparticle decoherence (which becomes significant for aluminum junctions above 160 mK) and dephasing from thermal microwave photons (which are problematic above 50 mK). Using low-loss niobium-trilayer junctions, which have reduced sensitivity to quasiparticles due to the higher superconducting transition temperature of niobium, we fabricate transmons with higher frequencies than previously studied, up to 24 GHz. We measure decoherence and dephasing times of about 1 μs, corresponding to average qubit quality factors of approximately 10 5 , and find that decoherence is unaffected by quasiparticles up to 1 K. Without relaxation from quasiparticles, we are able to explore dephasing from purely thermal sources, finding that our qubits can operate up to approximately 250 mK while maintaining similar performance. The thermal resilience of these qubits creates new options for scaling up quantum processors, enables hybrid quantum experiments with high heat-dissipation budgets, and introduces a material platform for even-higher-frequency qubits.

Josephson junctions↗
NASA NTRS1984

Sensitivity analysis of high-efficiency silicon solar-cell design parameters

Silicon solar cell design parameters were investigated to determine their bearing on cell efficiency. Among the parameters reviewed were: (1) bulk resistivity, (2) minority carrier lifetime cell thickness, (3) front junction depth, (4) front surface doping concentration, (5) front surface recombination velocity, and (6) back surface contact. The following were concluded: (1) there is good agreement between experimental and simulation results; (2) sheet material quality improvement is needed for high efficiency cells; (3) 20% cell of this design is feasible with 10 ms bulk lifetime material; and (4) for achieving efficiencies higher than 20% new cell designs including thin cells with light trapping and back surface field should be considered.

Mokashi, A. R.↗
DOE OSTI2022

Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd 2 Se 3 –MoS 2 Heterostructures

Two-dimensional (2D) materials form heterostructures in both the lateral and vertical directions when two different materials are interfaced, but with totally different bonding mechanisms of covalent in-plane to van der Waal’s layered interactions. Understanding how the competition between lateral and vertical forces influences the epitaxial growth is important for future materials development of complex mixed layered heterostructures. In this study, we use atomic-resolution annular dark-field scanning transmission electron microscopy to study the detailed atomic arrangements at mixed 2D heterostructure interfaces composed of two semiconductors with distinctly different crystal symmetry and elemental composition, Pd 2 Se 3 :MoS 2 , in order to understand the role of different chemical bonds on the resultant epitaxy. Pd 2 Se 3 is grown off the step edge in bilayer MoS 2 , and the vertical and lateral epitaxial relationships of the Pd 2 Se 3 –MoS 2 heterostructures are investigated. We find that the similarity of geometry at the interface with one metal (Pd or Mo) atoms bonded with two chalcogens (S or Se) are the crucial factors to make the atomically stitched lateral junction of 2D heterostructures. In addition, the vertical van der Waal interactions that are normally dominant in layered materials can be overcome by in-plane forces if the interfacial atomic stitching is high in quality and low in defect density. This knowledge should help guide the approaches for improving the epitaxy in mixed 2D heterostructures and seamless stitching of in-plane 2D heterostructures with various complex monolayer structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Superconducting (Ba,K)Fe 2 As 2 epitaxial films on single and bicrystal SrTiO 3 substrates

The realization of single crystal and bicrystal films of superconducting materials is of great interest because they allow the investigation of the intragrain performance as well as the understanding of potential limitations in the grain boundary transparency. For many years, the realization of a high-quality (Ba,K)Fe 2 As 2 film has been challenging. Here, the realization of (Ba,K)Fe 2 As 2 epitaxial thin films on single crystal SrTiO 3 (001) and [001]-tilt-type SrTiO 3 bicrystal substrates with high superconducting properties is demonstrated. The epitaxial growth of (Ba,K)Fe 2 As 2 was enabled by implementing an undoped BaFe 2 As 2 buffer layer between the SrTiO 3 substrate and (Ba,K)Fe 2 As 2 film. The film exhibits a high T c of 38.0 K and an extremely high J c of 14.3 MA/cm 2 at 4.2 K. Artificial grain boundaries of (Ba,K)Fe 2 As 2 were also successfully achieved on bicrystals with misorientation angles up to 36.8° by the same preparation methods. The artificial grain boundaries exhibited an identical T c of 38.0 K and an excellent transfer of the grain orientation from the bicrystal substrates with high crystallinity comparable to that of the high-quality Ba(Fe,Co) 2 As 2 films. Furthermore, this enables the investigation of the intrinsic (Ba,K)Fe 2 As 2 grain boundary nature, which will clarify its potential for superconducting applications, like Josephson junctions, wires, and magnets.

(Ba,K)Fe2As2↗
NASA NTRS2004

Space Technology 5: Pathfinder for Future Micro-Sat Constellations

The Space Technology 5 (ST-5) Project, currently in the implementation phase, is part of the National Aeronautics and Space Administration (NASA) s New Millennium Program (NMP). ST-5 will consist of a constellation of three miniature satellites, each with mass less than 25 kg and size approximately 60 cm by 30 cm. ST-5 addresses technology challenges, as well as fabrication, assembly, test and operations strategies for future micro-satellite missions. ST-5 will be deployed into a highly eccentric, geo-transfer orbit (GTO). This will expose the spacecraft to a high radiation environment as well as provide a low level magnetic background. A three-month flight demonstration phase is planned to validate the technologies and demonstrate concepts for future missions. Each ST-5 spacecraft incorporates NMP competitively-selected breakthrough technologies. These include Cold Gas Micro-Thrusters for propulsion and attitude control, miniature X-band transponder for space-ground communications, Variable Emittance Coatings for dynamic thermal control, and CULPRiT ultra low power logic chip used for Reed-Solomon encoding. The ST-5 spacecraft itself is a technology that can be infused into future missions. It is a fully functional micro-spacecraft built within tight volume and mass constraints. It is built to withstand a high radiation environment, large thermal variations, and high launch loads. The spacecraft power system is low-power and low-voltage, and is designed to turn on after separation &om the launch vehicle. Some of the innovations that are included in the ST-5 design are a custom spacecraft deployment structure, magnetometer deployment boom, nutation damper, X-band antenna, miniature spinning sun sensor, solar array with triple junction solar cells, integral card cage assembly containing single card Command and Data Handling and Power System Electronics, miniature magnetometer, and lithium ion battery. ST-5 will demonstrate the ability of a micro satellite to perform research-quality science. Each ST-5 spacecraft will deploy a precision magnetometer to be used both for attitude determination and as a representative science instrument. The spacecraft has been developed with a low magnetic signature to avoid interference with the magnetometer. The spacecraft will be able to detect and respond autonomously to science events, i.e. significant changes in the magnetic field measurements. The three spacecraft will be a pathfinder for future constellation missions. They will be deployed to demonstrate an appropriate geometry for scientific measurements as a constellation. They will be operationally managed as a constellation, demonstrating automation and communication strategies that will be useful for future missions. The technologies and future mission concepts will be validated both on the ground and in space. Technologies will be validated on the ground by a combination of component level and system level testing of the flight hardware in a thermal vacuum environment. In flight, specific validation runs are planned for each of the technologies. Each validation run consists of one or more orbits with a specific validation objective. This paper will describe the ST-5 mission, and the applicability of the NMP technologies, spacecraft, and mission concepts to future missions. It will also discuss the validation approach for the ST-5 technologies and mission concepts.

Carlisle, Candace↗
NASA NTRS1983

Ion implanted junctions for silicon space solar cells

This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.

Spitzer, M. B.↗
NASA NTRS1994

Chemical beam epitaxy for high efficiency photovoltaic devices

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.↗
DOE OSTI2024

Tunneling Spectroscopy at Megabar Pressures: Determination of the Superconducting Gap in Sulfur

The recent discovery of high-temperature, high-pressure superconductors, such as hydrides and nickelates, has opened exciting avenues in studying high-temperature superconductivity. The primary superconducting properties of these materials are well characterized by measuring various electrical and magnetic properties, despite the challenges posed by the high-pressure environment. Experimental microscopic insight into the pairing mechanism of these superconductors is even more challenging, due to the lack of direct probes of the superconducting gap structures at high pressure conditions. Here, we have developed a planar tunnel junction technique for diamond anvil cells and present ground-breaking tunneling spectroscopy measurements at megabar pressures. We determined the superconducting gap of elemental sulfur at 160 GPa, a key constituent of the high-temperature superconductor H 3 S . High quality tunneling spectra indicate that β -Po phase sulfur is a type II superconductor with a single s -wave gap with a gap value 2 Δ ( 0 ) = 5.6 meV . This technique is compatible with superconducting compounds synthesized in diamond anvil cells and provides insight into the pairing mechanism in novel superconductors under high-pressure conditions. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2021

Executive Summary of the American Radium Society Appropriate Use Criteria for Operable Esophageal and Gastroesophageal Junction Adenocarcinoma: Systematic Review and Guidelines

Limited guidance exists regarding the relative effectiveness of treatment options for nonmetastatic, operable patients with adenocarcinoma of the esophagus or gastroesophageal junction (GEJ). In this systematic review, the American Radium Society (ARS) gastrointestinal expert panel convened to develop Appropriate Use Criteria (AUC) evaluating how neoadjuvant and/or adjuvant treatment regimens compared with each other, surgery alone, or definitive chemoradiation in terms of response to therapy, quality of life, and oncologic outcomes.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2025

Tuning of electronic properties in highly lattice-mismatched epitaxial SmN

Here, we establish the relationship between native N vacancies, introduced through varying growth parameters, and the structural and transport properties in SmN thin films grown via molecular beam epitaxy grown on MgO(001). The varying levels of N vacancies introduced by varying the ratio of Sm to N atoms during deposition creates excess carriers that radically transform the electrical behavior of the film, over a range of five orders of magnitude, from highly resistive to highly conductive, and unlocking a phase transition evidenced by the presence of a ferromagnetic feature in resistivity. X-ray photoelectron spectroscopy results show that this effect is much less pronounced when varying the available nitrogen species. These samples retain a highly crystal quality despite being grown on a substrate with a lattice mismatch of 20%, alleviating the strain by forming a highly strained SmO oxide layer. The integration between SmN and several transition metal nitride compounds has the potential to unlock new architectures for Josephson junction devices.

36 - MATERIALS SCIENCE↗
NASA NTRS1982

Large area low-cost space solar cell development

A development program to produce 5.9 x 5.9 cm space quality silicon solar cells with a cost goal of 30 $/W is described. Cell types investigated include wraparound dielectric, mechanical wraparound and conventional contact configurations with combinations of 2 or 10 ohm/cm resistivity, back surface reflectors and/or fields, and diffused or ion implanted junctions. A single step process to cut cell and cover glass simultaneously is being developed. Results for cell and array tests are given. Large solar arrays that might use cells of this type are discussed.

Barona, C. R.↗
NASA NTRS1980

Crystal growth of device quality GaAs in space

The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal. Applications of deep level transient spectroscopy, derivative photocapitance spectroscopy, and SEM-cathodoluminescene in characterizing wide bandgap semiconductors; determining photoionization in MOS, Schottky barriers, and p-n junctions; and for identifying inhomogeneities are examined, as well as the compensation of indium phosphide.

Gatos, H. C.↗
DOE OSTI2022

Molecular Reaction Imaging of a Surface Recombination Process Explains Performance Variation Among Smooth MoS 2 Photoelectrodes

Transition metal dichalcogenides (TMD) such as WSe 2 and MoS 2 are highly efficient and stable light absorbers in TMD∣I − ,I 3 − ∣Pt liquid junction solar cells. It is generally accepted that TMD crystals with a large fraction of exposed edge sites exhibit lower power conversion efficiencies (PCEs) than apparently smooth crystals. However, one open question is why does the PCE vary significantly from one crystal to another? Answering this critical question could lead to robust syntheses for high quality and uniform TMD samples. In this work, we apply nanoscale photoelectrochemical microscopy techniques to study n-type TMD nanoflake∣I − ,I 3 − ∣Pt cells. Using a combination of near-diffraction-limited photocurrent mapping and molecular reaction imaging techniques, we reveal a previously hidden surface recombination process: photogenerated holes in hidden p-type domains travel micron-scale distances parallel to the solid/liquid interface and preferentially react with iodide at step-edges. The overall efficiency of the nanoflake, as evidenced from whole nanoflake-level photoelectrochemical measurements, is dictated by the size, efficiency, and location of n- and p-type domains. Furthermore, these results provide a unifying view of efficiency losses in smooth TMD photoelectrodes and open the possibility to design electrode architectures that leverage the long-range lateral charge transport property for photoelectrocatalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Design and Fabrication of Quantum Information Processing Devices (Final Report)

The goal of this work is to develop a wideband Josephson Parametric Amplifier (JPA) by the combination of a coplanar impedance transformer and a lumped Josephson Parametric Amplifier. Josephson Parametric Amplifiers take advantage of the nonlinear inductance of Josephson junctions and the nearly lossless superconductor circuits to achieve wave mixing and amplification with only quantum-limited added noise, which makes it a key component in quantum measurements, such as single-shot qubit measurement. However, the current JPAs generally have a relatively high quality factor and small bandwidth (around 50MHz to 100MHz), which limits their ability in measuring signals from a broad spectrum. Therefore, the work planned to use a coplanar impedance transformer to enhance the coupling between JPA and the signals, resulting in a small quality factor and large bandwidth. By decreasing the quality factor of JPA to around 3, one can achieve around 20dB gain within a bandwidth of several hundred MHz. Moreover, the wideband feature allows this device to explore the frequency dependence of the coupling between the JPA and the signals. Because the impedance transformer is based on a coplanar transmission line and requires no modifications of the lumped JPA, it is relatively straightforward to embed it in the current fabrication, package, and testing process for lumped JPA. The impedance transformer can be fabricated by liftoff or etching process with the lumped JPA together, which adds no fabrication complexity. The only difference is the size, which is around 3~5 times larger than lumped JPA. This may make the number of available chips on a single wafer lower. As for the public benefits, the development of this wideband JPA will make it possible to use just a single JPA device for multi-frequency signals, for example, the readout signals of a superconducting qubit chip with multiplexed readout bus. This would greatly decrease the demand for JPAs in quantum measurements.

42 ENGINEERING↗