Search NASA⌕ Search

SEARCH · Search NASA

Results for “magnetron sputtering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

Gessert, T. A.↗
NASA NTRS1982

Plasma deposition and surface modification techniques for wear resistance

The ion-assisted or plasma coating technology is discussed as it applies to the deposition of hard, wear resistant refractory compound films. Of the many sputtering and ion plating modes and configurations the reactive magnetron sputtering and the reactive triode ion plating techniques are the preferred ones to deposit wear resistant coatings for tribological applications. Both of these techniques incorporate additional means to enhance the ionization efficiency and chemical reaction to precision tailor desirable tribological characteristics. Interrelationships between film formation, structure, and ribological properties are strictly controlled by the deposition parameters and the substrate condition. The enhanced ionization contributes to the excellent adherence and coherence, reduced internal stresses and improved structural growth to form dense, cohesive, equiaxed grain structure for improved wear resistance and control.

Spalvins, T.↗
NASA NTRS1992

Ambient-Temperature Sputtering Of Composite Oxide Films

Technique for deposition of homogeneous films of multicomponent oxides on substrates at ambient temperature based on sequential sputter deposition of individual metal components, as alternating ultra-thin layers, from multiple targets. Substrates rotated over sputtering targets of lead, zirconium, and titanium. Dc-magnetron sputtering of constituent metals in reactive ambient of argon and oxygen leads to formation of the respective metal oxides intermixed on extremely fine scale in desired composition. Compatible with low-temperature microelectronic processing.

Thakoor, Sarita↗
NASA NTRS1990

Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing

Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In2O3 has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies over 16 percent (global). The results confirm that sputter deposition is not necessary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.

Gessert, T. A.↗
DOE OSTI2022

Structural dependence of hydrogen evolution reaction on transition metal catalysts sputtered at different temperatures in alkaline media

In the present article, we studied the catalytic activity of magnetron sputtered Mo, V, Ni, and Co thin films for hydrogen evolution reaction (HER) in the alkaline electrolyte. Here, we find that the HER potentials (η 10 ) of the Mo and V thin film catalysts sputtered at 800 °C shift positive with respect to those of the film catalysts sputtered at 25°C. For Mo metal the observed shift of η 10 was 280 mV and for V metal observed shift of η 10 was 390 mV. On the other hand, minimal effect of sputtering temperature on both Ni and Co thin film catalyst activity for HER was observed. Structural analysis reveals that Mo and V prepared at 800 °C have uncommon face centered cubic (fcc, 0.74 packing density) structure as opposed to room-temperature sputtered Mo and V thin films which have common body centered cubic (bcc, 0.68 packing density) structure, resulting in significant increases of the packing densities when they are prepared at 800 °C. On the other hand, the high-temperature prepared thin films of Ni and Co retained fcc structures, resulting in no density changes compared to the room-temperature prepared fcc Ni and hexagonal close packed (hcp, 0.74 packing density) Co. Impedance spectroscopy shows that fcc Mo is a better catalyst than fcc Ni, which is considered an industry standard for non-noble pure metal-based catalysts in alkaline media. Stability tests also suggest that fcc Mo thin film catalysts prepared at 800 °C are more durable than fcc Ni thin films. Our study points out that structure phases of catalysts can be a key factor governing the activities of transition metals for HER in alkaline media.

08 HYDROGEN↗
NASA NTRS1986

Towards an optimised sputtered MoS2 lubricant film

It is shown that the tribological quality of MoS2 lubricant films formed by magnetron sputtering is determined by the choice of sputtering conditions. By selecting the appropriate conditions, films of extremely high lubricity and endurance (in vacuum), which are well suited to many space applications, are obtained. Such MoS2 films, when applied to precision ball hearings, give rise to the lowest torques (for the given test conditions) yet seen in our laboratory. While a remarkably good performance is obtained in vacuum, tests in air show a marked deterioration in lubricating qualities. It is demonstrated that this is attributable to the adsorption of water vapor on MoS2 surfaces and that the degree of deterioration is related to the partial pressure of water vapor present. Analysis of results indicates that the factors relevant to obtaining optimum films are deposition rate and film composition.

Roberts, E. W.↗
NASA NTRS1999

Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

Zhu, Shen↗
NASA NTRS1997

MS212--A Homogeneous Sputtered Solid Lubricant Coating for Use to 800 C

Composite coatings containing chromium carbide, stable fluorides and silver were prepared by magnetron sputtering. The microstructure of the coatings is very homogeneous compared to that of plasma sprayed and sintered versions of the same chemical composition. Friction and wear of MS212-coated and baseline uncoated aluminum and Inconel X-750 are compared. At room temperature, the friction and wear of coated aluminum is dramatically better compared to the baseline. The acceptable load is limited by deformation of the soft aluminum substrate. In the case of the nickel alloy, lower friction is observed for the coated alloy at all temperatures up to the maximum test temperature of 800 C. Pin wear factors for sliding against the coated alloy are lower than the baseline at room temperature and 350 C, and comparable to baseline wear at higher test temperatures. Low baseline wear at high temperatures is due to the lubricious nature of the natural oxides formed on nickel-chromium alloys in a hot, oxidizing atmosphere. No load limit was found for coated Inconel X-750 at loads up to five times the load limit for coated aluminum.

Sliney, Harold E.↗
NASA NTRS1986

Influence of process parameter variation on the reflectivity of sputter-deposited W-C multilayer diffraction gratings

Multilayer W-C diffraction gratings with nominal d spacings of 35 A have been fabricated by magnetron sputter deposition. The peak and integrated reflectivities of these films have been measured with Al K-alpha X-rays and compared to theoretical values. The rms surface roughness has been evaluated. The influence of several sputtering-system process parameters on the reflectivities has been investigated.

Sager, B.↗
NASA NTRS1993

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Subramanyam, G.↗
NASA NTRS2011

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Scardelletti, Maximilian C.↗
DOE OSTI2022

Time-resolved electron energy distribution functions at the substrate during a HiPIMS discharge with cathode voltage reversal

Abstract The time-dependent plasma properties of a high-power impulse magnetron sputtering plasma are investigated which include a positive ‘kick’ pulse on the sputtering target 2 μ s after the main negative pulse, this reversing the voltage on the cathode. At a substrate 15 cm distant from the magnetron, the time-dependent electron energy distribution function (EEDF), plasma potential, potential commute time and plasma diffusion properties are measured using a single Langmuir probe. Results show that the positive pulse on the target expels plasma and raises the plasma potential across the chamber on the order of 1 to 2 μ s, which is the time scale of the electron diffusion. The EEDF at the substrate fits a Druyvesteyn distribution during the main negative pulse rising slightly in average energy over time. The distribution is still Druyvesteyn and at the very start of the positive pulse, but then loses the higher energy electrons and drops in average electron energy as the positive pulse progresses. A Boltzmann equation solver, BOLSIG+, was used to predict the EEDF at the substrate during the positive pulse and it agrees best with the measurements assuming a value of 0.2 Td for the E / N (electric field/gas number density).

Physics↗
DOE OSTI2020

Sputter-deposited low-stress boron carbide films

Significant challenges have been faced in the manufacturing of low-stress B 4 C films. Here, we demonstrate a set of process parameters for direct-current magnetron sputter deposition of smooth, high-purity, amorphous B 4 C films with near-zero total residual stress and with thicknesses up to 10 μm. Films are characterized by a combination of high-energy ion scattering, x-ray diffraction, electron microscopy, and stress measurements based on substrate curvature. In order to facilitate the process transfer to other sputtering geometries, the favorable deposition conditions are correlated with distributions of landing energies and incident angles of depositing species estimated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Based on such simulations, a decrease in compressive stress with increasing Ar working gas pressure is attributed to the corresponding broadening of the angular distribution of depositing species and associated atomic shadowing effects.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Cu and Ni Co-sputtered heteroatomic thin film for enhanced nonenzymatic glucose detection

Abstract In this work, we report a wafer-scale and chemical-free fabrication of nickel (Ni) and copper (Cu) heteroatomic Cu–Ni thin films using RF magnetron sputtering technique for non-enzymatic glucose sensing application. The as-prepared wafer-scale Cu–Ni thin films exhibits excellent electrocatalytic activity toward glucose oxidation with a 1.86 μM detection limit in the range of 0.01 mM to 20 mM range. The Cu–Ni film shows 1.3- and 5.4-times higher glucose oxidation activity in comparison to the Cu and Ni electrodes, respectively. The improved electrocatalytic activity is attributed to the synergistic effect of the bimetallic catalyst and high density of grain boundaries. The Cu–Ni electrodes also possessed excellent anti-interference characteristics. These results indicate that Cu–Ni heteroatomic thin film can be a potential candidate for the development of non-enzymatic glucose biosensor because of its chemical free synthesis, excellent reproducibility, reusability, and long-term stability.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1986

Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

Stirn, Richard J.↗
DOE OSTI2020

Large anisotropic magnetocaloric effect in all-sputtered epitaxial terbium thin films

We present an experimental investigation of the magnetic and magnetocaloric properties of sputtered epitaxial and amorphous Tb thin films. We grew epitaxial Nb (50-nm)/Tb (100-nm) bilayer thin films on Al 2 O 3 $(11\bar{2}0)$ substrate using DC magnetron sputtering at high temperature, with excellent crystalline quality of the hcp Tb(0001) layer. While the amorphous Tb thin film exhibits more isotropic magnetocaloric properties, we show that the epitaxial Tb thin film displays large anisotropic magnetocaloric properties, with a large maximum magnetic entropy change of 6.27 J kg -1 K -1 at the Néel temperature as well as a large relative cooling power of 225 J kg -1 with a magnetic field change ΔH = 20 kOe applied along the in-plane direction. These large and anisotropic magnetocaloric properties are much larger than those measured for the amorphous Tb thin film, or previously reported for Tb-based thin-film structures. Our findings highlight the opportunities for growing epitaxial rare-earth thin films using sputtering techniques and demonstrate the importance of crystallographic control on the magnetocaloric effect in Tb thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Microstructural and Superconducting Radiofrequency Properties of Multilayer Sequentially Sputtered Nb 3 Sn films

Nb 3 Sn is considered as a potential candidate for superconducting radiofrequency cavities for particle acceleration due to its higher transition temperature of 18.3 K and higher superheating field of 400 mT. Nb 3 Sn films can be grown inside the surface of a Nb cavity by sequentially sputtering multiple layers of Nb and Sn thin films followed by annealing at 950 °C for 3 h. We report on the properties of Nb 3 Sn films grown on Nb substrates by magnetron sputtering. The films’ crystal structure, surface morphology, and composition were characterized by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The films had a polycrystalline Nb 3 Sn structure with a fine-grain surface and an atomic Sn composition of ~23%. The RF surface resistance of the films was measured for different temperatures at 7.4 GHz to understand the feasibility of this method for the SRF application. The RF surface resistance of the films was 5 mΩ at 12 K, which is about 2 orders of magnitude higher than 60 μΩ previously measured in Nb 3 Sn films grown by Sn vapor diffusion. Finally, the sputtered film had a superconducting transition at 17.2 K, which is also lower than 17.9 K observed in Nb 3 Sn film prepared by vapor diffusion.

43 PARTICLE ACCELERATORS↗
NASA NTRS1999

Low Energy Sputtering Experiments for Ion Engine Lifetime Assessment

The sputtering yield of molybdenum under xenon ion bombardment was measured using a Quartz Crystal Microbalance. The measurements were made for ion kinetic energies in the range 100-1keV on molybdenum films deposited by magnetron sputtering in conditions optimized to reproduce or approach bulk-like properties. SEM micrographs for different anode bias voltages during the deposition are compared, and four different methods were implemented to estimate the density of the molybdenum films. A careful discussion of the Quartz Crystal Microbalance is proposed and it is shown that this method can be used to measure mass changes that are distributed unevenly on the crystal electrode surface, if an analytical expression is known for the differential mass-sensitivity of the crystal and the erosion profile. Finally, results are presented that are in good agreement with previously published data, and it is concluded that this method holds the promise of enabling sputtering yield measurements at energies closer to the threshold energy in the very short term.

Duchemin Olivier B.↗