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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Pinto, N. J.↗
NASA NTRSDate not supplied

The Gandalf Staff: A Mobile Tool for Lunar Exploration (2nd year of development)

The Gandalf Staff is a mobile tool designed to be a flexible device supporting crewed and uncrewed operations on the lunar surface. The core of the device is a 24v battery with communications and data storage systems. Initial optional components supporting crewed Extra-Vehicular Activity (EVA) include a LiDAR and 360˚ camera. These provide 3D mapping of the traverse for documentation, and to aid future planning. The mapping also creates outreach opportunities for the public to “stand beside” the astronaut in Virtual Reality (VR). The staff provides external lighting for field site illumination in the south polar region low sun angle environment. Navigation instruments for crew position determination with Lunar Search and Rescue (LunaSAR) are also included. The staff itself can be used as a walking aid or as a splint for Incapacitated Crew Rescue (ICR). As a stand-alone device, the staff operates as a long duration untended science platform collecting environmental data and sending it to a lunar base station. The stand-alone mode requires connection to an auxiliary power source (e.g. solar array) and energy storage system (e.g. battery), so it could become an electrical recharging station. To make rapid progress in the 1st year, and also to demonstrate innovative project management techniques, NASA guided a private industry partner, T STAR, in leading Capstone Engineering student teams at Texas A&M University (TAMU) for proof-of-concept development and testing. These teams developed the power system and demonstrated successful integration of LiDAR, WiFi communications, and external lighting subsystems. Another industry team at Jacobs Technology prototyped a tripod to hold the staff upright. For the 2nd year (FY’22), NASA will again collaborate with partners to prototype enhanced power and lighting concepts. Year 2 will also add new capability for LunaSAR and geophysical science instrumentation using a heat probe. The heat probe is based upon Apollo heritage but modified to measure subsurface volatile ice regimes at the Artemis landing site. Components of the Gandalf Staff can be developed, tested, and deployed independently, or on the integrated staff, rovers, or utility trailers. The project supports crew safety, lunar sample curation, mission science, and public outreach goals of NASA. PLAIN TEST SUMMARY: Gandalf Staff is a 24v battery powered mobile tool for the lunar surface supporting crewed geologic field site exploration, or as a stand-alone science platform. As a tool assisting astronauts conducting field geology, the Gandalf Staff provides external lighting to illuminate shadowed regions on the surface. It also documents the process of collecting rocks and dust samples using a LiDAR (laser range instrument) and cameras. The staff provides a beacon for emergency location of astronauts and augments communications when the astronauts are blocked by large boulders. As a standalone science platform, the Gandalf Staff provides a power system for instruments and sensors to measure the lunar environment over long periods of time. The staff gathers data and sends the results to a lunar base station for analysis.

External Lighting↗
NASA NTRS1985

Generalized reciprocity theorem for semiconductor devices

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Misiakos, K.↗
NASA NTRS1990

NASA safety standard for lifting devices and equipment

NASA's minimum safety requirements are established for the design, testing, inspection, maintenance, certification, and use of overhead and gantry cranes (including top running monorail, underhung, and jib cranes), mobile cranes, derrick hoists, and special hoist supported personnel lifting devices (these do not include elevators, ground supported personnel lifts, or powered platforms). Minimum requirements are also addressed for the testing, inspection, and use of Hydra-sets, hooks, and slings. Safety standards are thoroughly detailed.

Source record↗
NASA NTRS1980

Photonitride passivating coating for IC's

Increased reliability and simplified fabrication result from postassembly preencapsulation passivation process. Photonitride reaction chamber receives silane, ammonia, and mercury from mixing manifold to form passivating coating on IC's. Photonitride layer is barrier to moisture and penetration by mobile ions, and helps to protect IC devices subjected to severe mechanical handling or circuit repair procedures. Process is compatible with variety of wire-bonded lead frame assemblies. Advantages over plasma and sputtering deposition processes are low deposition temperature and zero stray radiation and ion levels.

Hall, T. C.↗
NASA NTRS1995

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Schacham, S. E.↗
NASA NTRS2012

Monitoring Location and Angular Orientation of a Pill

A mobile pill transmitter system moves through, or adjacent to, one or more organs in an animal or human body, while transmitting signals from its present location and/or present angular orientation. The system also provides signals from which the present roll angle of the pill, about a selected axis, can be determined. When the location coordinates angular orientation and the roll angle of the pill are within selected ranges, an aperture on the pill container releases a selected chemical into, or onto, the body. Optionally, the pill, as it moves, provides a sequence of visually perceptible images. The times for image formation may correspond to times at which the pill transmitter system location or image satisfies one of at least four criteria. This invention provides and supplies an algorithm for exact determination of location coordinates and angular orientation coordinates for a mobile pill transmitter (PT), or other similar device that is introduced into, and moves within, a GI tract of a human or animal body. A set of as many as eight nonlinear equations has been developed and applied, relating propagation of a wireless signal between either two, three, or more transmitting antennas located on the PT, to four or more non-coplanar receiving antennas located on a signal receiver appliance worn by the user. The equations are solved exactly, without approximations or iterations, and are applied in several environments: (1) association of a visual image, transmitted by the PT at each of a second sequence of times, with a PT location and PT angular orientation at that time; (2) determination of a position within the body at which a drug or chemical substance or other treatment is to be delivered to a selected portion of the body; (3) monitoring, after delivery, of the effect(s) of administration of the treatment; and (4) determination of one or more positions within the body where provision and examination of a finer-scale image is warranted.

Schipper, John F.↗
NASA NTRS2016

Quantification of ln-Flight Physical Changes: Anthropometry and Neutral Body Posture

Currently, NASA does not have sufficient in-flight anthropometric data to assess the impact of changes in body shape and size. For developing future planetary and reduced-gravity suits, NASA needs to quantify the impacts of microgravity on anthropometry and body posture to ensure optimal crew performance, fit, and comfort. To obtain data on these changes, circumference, length, height, breadth, and depth for body segments (chest, waist, bicep, thigh, calf) from astronauts for preflight, in-flight, and post-flight conditions needs to be collected. Once these data have been collected, pre-flight, in-flight, and post-flight anthropometric values will be compared, yielding microgravity factors. The neutral body posture (NBP) will also be measured, to determine body posture (joint angle) changes between subjects throughout the duration of a mission. Data collection, starting with Increments 37/38, is still in progress but has been completed for 6 out of 9 subjects. NASA suit engineers and NASA's Extravehicular Activity (EVA) Project Office have identified that suit fit in microgravity could become an issue. It has been noted that crewmembers often need to adjust their suit sizing once they are in orbit. This adjustment could be due to microgravity effects on anthropometry and postural changes, and is necessary to ensure optimal crew performance, fit, and comfort in space. To date, the only data collected to determine the effects of microgravity on physical human changes were collected during Skylab 4, the Apollo-Soyuz Test Project (ASTP), Space Shuttle mission STS-57, and a recent HRP study on seated height changes due to spinal elongation (Spinal Elongation, Master Task List [MTL] #221). The Skylab 4, ASTP, and the STS-57 studies found that, according to photographs, a distinct NBP exists. The still photographs showed a distinguishable posture with the arms raised and the shoulders abducted; in addition, the knees are flexed, with noticeable hip flexion, and the foot is plantar flexed [1,2]. This combination is considered to be the standard set of body joint angles for an NBP in microgravity. A recent simulated microgravity NBP study [3] showed individual variability and inconsistencies in defining NBP. This variation may be influenced by spinal growth, and other potential anthropometry factors such as spinal curvature, age, and gender. Data on the variation of this posture data is required for all kinds of space device designs (such as suits, habitat, and mobility aids). The method proposed in this study considers the dynamic nature of body movement and will use a measurement technique to continually monitor posture and develop a probability likelihood of the neutral posture and how the NBP postures are affected by anthropometry. Additionally, Skylab studies found that crewmembers experienced a stature growth of up to 3 percent. The data included 3 crewmembers and showed that a biphasic stature growth occurs once the crewmember enters into weightlessness. However, the HRP Spinal Elongation study showed that crewmembers could experience about a 6 percent growth in seated height and a 3 percent stature growth, when exposed to microgravity. The results of that study prove that not all anthropometric measurements have the same microgravity percent growth factor. For EVA and suit engineers to properly update the sizing protocol for microgravity, they need additional anthropometric data from space missions. Hence, this study is aimed at gathering additional in-flight anthropometric measurements, such as length, depth, breadth, and circumference, to determine the changes to body shape and size caused by microgravity effects. It is anticipated that by recording the potential changes to body shape and size, NASA will develop a better suit sizing protocol for the International Space Station and other space missions. In essence, this study will help NASA quantify the impacts of microgravity on anthropometry to ensure optimal crew performance, fit, and comfort. This study will use standard anthropometry data collection techniques, 3D laser scanning, digital still photography, and video data, and perform photogrammetric analyses to determine the changes that occur to the body shape and size, and to NBP, when the human body is exposed to a microgravity environment.

Young, K. S.↗
NASA NTRS2017

The LEMUR 3 Limbed Climbing Robot

This paper introduces a new four-limbed robot, LEMUR 3, that has demonstrated climbing on cliff faces and smooth glass. Each limb on the robot consists of seven identical actuators in a serial chain. Each limb terminates in a single axis force sensor that allows various end effectors to be mounted and connected to the robot’s power and communication system. Microspine grippers were used for climbing the rocky surface and gecko adhesive grippers were used for the glass solar panels. All other hardware and much of the software was common for the two demonstrations. The robot’s mechanical, electrical, and software systems, various gripping devices, and field demonstrations are described. Limbed mobility is of interest to JPL and NASA because of its potential to access extreme terrain, including that on Mars and in microgravity environments.

Kennedy, Brett↗
NASA NTRS2003

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗
NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS2002

Laser-Camera Vision Sensing for Spacecraft Mobile Robot Navigation

The advent of spacecraft mobile robots-free-flyng sensor platforms and communications devices intended to accompany astronauts or remotely operate on space missions both inside and outside of a spacecraft-has demanded the development of a simple and effective navigation schema. One such system under exploration involves the use of a laser-camera arrangement to predict relative positioning of the mobile robot. By projecting laser beams from the robot, a 3D reference frame can be introduced. Thus, as the robot shifts in position, the position reference frame produced by the laser images is correspondingly altered. Using normalization and camera registration techniques presented in this paper, the relative translation and rotation of the robot in 3D are determined from these reference frame transformations.

Maluf, David A.↗
NASA NTRS1970

Tandem wheel drop-legs for standard truck trailer

Tandem wheel drop-leg device provides a semitrailer with fore and aft mobility that allows it to be moved without a prime mover. The modified drop-legs have trunnion dual wheels and an adjustable brace.

Cantwell, W.↗
NASA NTRS1993

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Schacham, S. E.↗
NASA NTRS1984

Conceptual design of a mobile remote manipulator system

A mobile remote manipulator system has been identified as a necessary device for space station. A conceptual design for an MRMS is presented which features (1) tracks on the MRMS and guide pins only on the truss structure, (2) a push/pull drive mechanism which rotates to permit movement in four directions, and (3) spacecrane and mobile foot restraint manipulators (or arms). Operational and design features of the MRMS elements are described and illustrated. Concepts are also presented which permit rotating the operational plane of the MRMS through 90 deg. Such a system has been found to have great utility for initial space station construction, maintenance and repair, and to provide a construction capability for future station growth or large spacecraft assembly and/or servicing.

Bush, H. G.↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS1975

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.

Carnes, J. E.↗