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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. Here, the reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

(pin diodes, APDs, SiPMs, G-APDs, CCDs, EBCCDs, EM↗
DOE OSTI2024

Sub-millisecond keyhole pore detection in laser powder bed fusion using sound and light sensors and machine learning

Laser powder bed fusion is a mainstream additive manufacturing technology widely used to manufacture complex parts in prominent sectors, including aerospace, biomedical, and automotive industries. However, during the printing process, the presence of an unstable vapor depression can lead to a type of defect called keyhole porosity, which is detrimental to the part quality. In this study, we developed an effective approach to locally detect the generation of keyhole pores during the printing process by leveraging machine learning and a suite of optical and acoustic sensors. Simultaneous synchrotron x-ray imaging allows the direct visualization of pore generation events inside the sample, offering high-fidelity ground truth. A neural network model adopting SqueezeNet architecture using single-sensor data was developed to evaluate the fidelity of each sensor for capturing keyhole pore generation events. Our comparative study shows that the near infrared images gave the highest prediction accuracy, followed by 100 kHz and 20 kHz microphones, and the photodiode sensitive to processing laser wavelength had the lowest accuracy. Using a single sensor, over 90% prediction accuracy can be achieved with a temporal resolution as short as 0.1 ms. A data fusion scheme was also developed with features extracted using SqueezeNet neural network architecture and classification using different machine learning algorithms. Our work demonstrates the correlation between the characteristic optical and acoustic emissions and the keyhole oscillation behavior, and thereby provides strong physics support for the machine learning approach.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A butterfly-shaped acceptor with rigid skeleton and unique assembly enables both efficient organic photovoltaics and high-speed organic photodetectors

ABSTRACT It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.41%. Notably, an efficiency of 19.42% was achieved for the ternary device based on PM6:BTP-eC9:WD-6. Moreover, the photodetection device based on WD-6 demonstrated an ultrafast response speed (205 ns response time at λ of 820 nm) and a high cutoff frequency of −3 dB (2.45 MHz), surpassing the values of most commercial Si photodiodes. Based on these findings, we showcased an application of the WD-6-based photodetection device in high-speed optical communication. These results offer valuable insights into the design of organic semiconductor materials capable of simultaneously exhibiting high photovoltaic and photodetective performance.

Science & Technology - Other Topics↗
DOE OSTI2022

High-throughput nuclear resonance time domain interferometry using annular slits

Nuclear resonance time domain interferometry (NR-TDI) is used to study the slow dynamics of liquids (that do not require Mössbauer isotopes) at atomic and molecular length scales. Here the TDI method of using a stationary two-line magnetized 57 Fe foil as a source and a stationary single-line stainless steel foil analyzer is employed. The new technique of adding an annular slit in front of a single silicon avalanche photodiode detector enables a wide range of momentum transfers (1 to 100 nm -1 by varying the distance between the annular slits and sample) with a high count rate of up to 160 Hz with a Δ q resolution of ±1.7 nm -1 at q = 14 nm -1 . The sensitivity of this method in determining relaxation times is quantified and discussed. The Kohlrausch–Williams–Watts (KWW) model was used to extract relaxation times for glycerol. These relaxation times give insight into the dynamics of the electron density fluctuations of glycerol as a function of temperature and momentum transfers.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors

The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a ${15} \times {15}~\mu $ m2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor’s commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of $0.15\text {e}^ - $ , demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Correction for Neutral Pressure-Driven Signal in Radiated Power Measurements on Proto-MPEX

A pinhole camera using four-channel resistive bolometers was designed and implemented on the Prototype Material Plasma Exposure eXperiment (Proto-MPEX) to measure the plasma radiated power. Quantification of the radiated power is required for comprehensive power balance assessments but faces unique challenges on linear plasma devices due to weak absolute signal, compared to typical use in toroidal fusion plasmas, and high neutral pressure changes. Around 1 mTorr, the pressure-driven signal contribution was shown to overwhelm the radiated power signal in Proto-MPEX, found to be ~3 μW . Since the pressure-driven signals could not be predicted from first principle arguments, the signals were corrected using empirical models that take two experimental pressure measurements and the raw bolometer signal to reveal the radiated power signals. Four “gas-only” Proto-MPEX shots were taken, without the radio frequency (rf) plasma discharge, to train, optimize, and validate empirical models. The data included two pressure measurements at different locations along with the bolometer signal. Multiple models were tested; partial least-squares regression with a cross correlation method to account for the time offset in the pressure measurements provided the best combination of accuracy and stability. The model was validated to have a modeling error of 0.0036 V, which was lower than 10% of the expected radiated power signal. The model was tested on a different “gas-only” shot with a complete time-series data. For plasma operation shots, the corrected bolometer measurements were compared with an absolute extreme ultraviolet photodiode measurement and similarities and differences are discussed.

Lee, Seungsup↗
DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗
DOE OSTI2022

Fast External Quantum Efficiency Measurements of Photovoltaic Modules

The external quantum efficiency (EQE) or associated spectral response is widely used to evaluate the performance of photovoltaics, light emitting diodes, photodetectors, photodiodes, semiconductor lasers, laser-induced refrigeration of solids etc. For photovoltaic (PV) devices, The EQE is used to determine the spectral mismatch correction that is used to convert a performance measurement from a non-ideal simulator spectrum to a standard spectrum in PV device calibrations. Moreover, EQE can provide important insight into the physics of a PV device. For instance, the EQE shape can be used to infer mechanisms limiting the performance of the device. However, EQE measurements of full-size PV modules remain a challenge in the PV community due to rare availability of reliable module QE measurement tools worldwide and the size and complexity of module architecture that comprises several cells connected in strings (series or/and parallel). Here, we use a customized nondestructive tool made of high-power light emitting diodes to perform high-throughput EQE measurements on PV modules. Circuit simulations show that the measurement system can safely be used to measure both crystalline silicon and thin film-based PV modules with series connected cells without the risk of damage through reverse bias. In addition, EQE mapping combined with electroluminescence show a strong correlation and provide a way to determine both spatial non-uniformity of the spectral response and defects/degradation effects across the module.

PV module↗
DOE OSTI2023

Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors

High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D*) over 10 12 Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10 12 Jones at 1.02 μm, which is the highest D* for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D* in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Femtojoule optical nonlinearity for deep learning with incoherent illumination

Optical neural networks (ONNs) are a promising computational alternative for deep learning due to their inherent massive parallelism for linear operations. However, the development of energy-efficient and highly parallel optical nonlinearities, a critical component in ONNs, remains an outstanding challenge. Here, we introduce a nonlinear optical microdevice array (NOMA) compatible with incoherent illumination by integrating the liquid crystal cell with silicon photodiodes at the single-pixel level. We fabricate NOMA with more than half a million pixels, each functioning as an optical analog of the rectified linear unit at ultralow switching energy down to 100 femtojoules per pixel. With NOMA, we demonstrate an optical multilayer neural network. Our work holds promise for large-scale and low-power deep ONNs, computer vision, and real-time optical image processing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spectral kernel machines with electrically tunable photodetectors

Spectral machine vision collects spectral and spatial information as three-dimensional hypercubes and digitally processes them, which causes a data bottleneck, limiting power efficiency, frame rate, and spectral-spatial resolution. This work introduces spectral kernel machines (SKMs) to overcome these bottlenecks. SKM directly compresses spectral analysis through the output photocurrent and learns from example objects to identify and classify new samples in a "sniff-and-seek" mode. We experimentally demonstrated SKMs with electrically tunable bipolar black phosphorus-molybdenum disulfide (bP-MoS2) photodiodes in the near- and mid-infrared band and silicon photoconductors in the visible band, performing versatile intelligent tasks from chemometrics to semiconductor metrology. This architecture consumed substantially less power and was more than an order of magnitude faster than existing solutions for hyperspectral image analysis, defining an intelligent imaging and sensing paradigm with intriguing possibilities.

Zhang, Dehui↗
DOE OSTI2025

Real-time single-element-detection structured illumination optical metrology for laser powder bed fusion

Laser powder bed fusion (LPBF) is a type of metal additive manufacturing which could benefit from improved process monitoring to improve quality control. We demonstrate, for the first time to our knowledge, the coaxial monitoring of melt track formation in steel powder with spatial frequency modulation imaging (SPIFI), an enhanced-resolution imaging technique which uses a photodiode to record one-dimensional images. Using a custom live-display software and a high-speed SPIFI geometry, we offset the SPIFI field of view from the fusing beam to monitor different regions of the LPBF melt pool and surrounding area. This demonstrates the potential of SPIFI to monitor spatial features within the melt pool in real-time with increased data efficiency.

Hunter, Scott (ORCID:0009000886150312)↗
DOE OSTI2021

Parameters of fast and high-yield InAs/GaAs quantum dot semiconductor scintillator

InAs quantum dots (QDs) embedded into a waveguiding GaAs semiconductor matrix may produce scintillation detectors with exceptional speed and yield, making them valuable for nuclear security, medical imaging, and high energy physics applications. In this work, we developed thick (~25 μm) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. Here, the bulk GaAs acts as a stopping material for incident particles and as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (< 1 cm –1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with an external photodiode (PD) and an integrated PD which provided an improved optical coupling. The mean charge collected by the integrated PD corresponded to 3 × 10 4 photoelectrons per 1 MeV of deposited energy, or ~13% of the theoretically achievable light yield. Combined with the previously measured QD scintillation time of 0.3-0.6 ns, this makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Near-infrared noise in intense electron beams

Requirements for the noise in electron beams (NEB) have recently approached the Shot-noise level in some new applications. The density fluctuations of intense beams in the near-infrared (NIR) region are being measured at the Fermilab Accelerator Science and Technology (FAST) facility. The main goal of the experiment is to accurately compare the Shot-noise model with the observations of optical transition radiation (OTR) generated by the gamma=63 electron beam transiting an Al metal surface. In addition, evidence for longitudinal-space-charge-induced microbunching for the chicane-compressed beam was obtained with coherent enhancements up to 100 in the various bandwidth-filtered NIR OTR photodiode signals. With micropulse charges up to 1 nC, the beam parameters are close to those proposed for a stage in an Electron-Ion Collider (EIC) with coherent electron cooling (CEC). In this paper we present the current progress of the NEB project and compare the low electron energy measurements with ImpactX simulations.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Study of Fluctuations in Undulator Radiation in the IOTA Ring at Fermilab

We study turn-by-turn fluctuations in the number of emitted photons in an undulator, installed in the IOTA electron storage ring at Fermilab, with an InGaAs PIN photodiode and an integrating circuit. In this paper, we present a theoretical model for the experimental data from previous similar experiments and in our present experiment, we attempt to verify the model in an independent and a more systematic way. Moreover, in our experiment we consider the regime of very small fluctuation when the contribution from the photon shot noise is significant, whereas we believe it was negligible in the previous experiments. Accordingly, we present certain critical improvements in the experimental setup that let us measure such a small fluctuation.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

High-Volume Precipitation Spectrometer (HVPS) Instrument Handbook

The high-volume precipitation spectrometer (HVPS) is a U.S. Department of Energy (DOE) Atmospheric Radiation Measurement (ARM) user facility instrument for measuring hydrometeors larger than 150 μm. It is an open-path instrument located on the outside of the aircraft, typically below the wing. A laser sheet throws a shadowgraph image of the hydrometeor (cloud droplets or ice crystals) in the sample volume on a photodiode array. As the hydrometeor moves through the sample volume, this optical array records the moving shape and a two-dimensional picture can be recorded. At an air speed of 100 m/s, the sample volume is 310 l/s. The recorded images can be analyzed for size distributions, number concentrations, and further cloud properties detailed below. Hydrometeors in the range of 0.3-19.2 mm can be fully recorded at a 150 μm resolution; larger particles can only be sized along the direction of flight.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Performance of Scintillation Detectors Based on Quantum Dots in a Semiconductor Matrix (Final Technical Report)

InAs Quantum Dots (QDs) embedded into GaAs semiconductor waveguide have unique scintillation properties, valuable for nuclear security, medical imaging, and high energy physics. In this work, we developed thick (~25um) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. In this type of detector, the GaAs matrix acts as a stopping material for charged particles or photons generating electrons captured by the QDs acting as luminescence centers. The QD medium is designed to provide fast capture of electrons into QDs (few ps), high QD luminescence efficiency at room temperature (>50%), and strong red-shift of photoluminescence (PL) from the GaAs absorption edge (>250nm). Typical devices consist of a 10-25um thick GaAs layer with embedded sheets of modulation p-type doped InAs QDs and an InGaAs photodetector tuned to the QD emission wavelength. The thick GaAs layer acts also as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (~1cm -1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with both an external photodiode (PD) and an integrated PD which provided an improved optical coupling. In the former case, the external InGaAs PD was air-coupled to the scintillator and had the light collection efficiency of about 1% corresponding to limited light extraction through a planar interface with air due to total internal reflection. The mean charge collected by the integrated PD was in the range of (3÷5)×10 4 photoelectrons per 1 MeV of deposited energy, or ~13-20% of the theoretically achievable light yield. Timing of the integrated device was measured by wire-bonding it to the input of an 8 GHz IC. The scintillation response shows an extremely fast 0.3-0.6 ns decay constant and about 40-70 ps time resolution, limited by the system noise. The combined light yield and decay time makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported making it valuable for high energy physics and medical imaging applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Photon-to-Digital Converters for Neutron Imaging Instruments (Final Report)

Oak Ridge National Laboratory (ORNL) collaborated with the Université de Sherbrooke (UdeS) to design a modular and scalable tile of innovative digital photodetectors called Photon-to-Digital Converters (PDC) and the required subsystems to demonstrate the feasibility of large area single-photon detectors to support high-resolution, depth-of-interaction, fast neutron radiography based on scintillation detectors. The goal is to demonstrate the advantages of using PDC over conventional Silicon Photomultiplier (SiPM) for neutron imaging systems. The basic building blocks of analog SiPM and PDC are Single-Photon Avalanche Photodiodes (SPAD). The main difference between conventional SiPMs and PDCs, is in the fact that analog SiPMs sum the charge produced by individual SPAD passively, while in PDCs each SPAD is read out individually by an active electronic circuit. Hence, PDCs provide a direct photon-to-bit conversion where a logic “1” means that there was a detection in a given SPAD. Conversely, an analog SiPM requires a sophisticated preamplifier (current amplifiers or transimpedance amplifier) followed by a shaping amplifier and an analog-to-digital converter. Moreover, since the charge from each SPAD varies slightly, the passive sum of the analog SiPM will have signal fluctuations for the same amount of photon detected. This is one of many issues that is completely eliminated by individual one-to-one SPAD read out in PDCs. The large area required for scintillator readouts for neutron imaging is such that the output capacitance of a large area of SiPM arrays is very high. This creates a burden on the signal-to-noise optimization with respect to the power budget. For PDC, the power consumption is dictated by rate of the incident photon flux, or in photon-starved environments, the dark noise rate of the SPAD array. In other words, the power consumption in the absence of events is extremely low. Hence, the power consumption of a PDC read out system is much lower than its analog counterpart. Further, the large SiPM capacitance may introduce signal distortions on the scintillator fast rise or decay time with undesired effects on timing and pulse shape discrimination. The problem is absent in PDCs, as their readout is independent on device capacitance. UdeS is the world leader in 3D vertical integration of frontside illuminated SPAD arrays over CMOS readouts. These capabilities allow future production of “3D PDC” with maximum photosensitive fill factor and electronic functionalities tailored to the application. UdeS' vast knowledge of SPADs and CMOS design made the team an ideal collaborator in the development of large area high-resolution fast neutron radiography.

42 ENGINEERING↗