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All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

2023 Astrophotonics Roadmap: Pathways to Realizing Multi-Functional Integrated Astrophotonic Instruments

Photonic technologies offer numerous functionalities that can be used to realize astrophotonic instruments. The most spectacular example to date is the ESO Gravity instrument at the Very Large Telescope in Chile that combines the light-gathering power of four 8 m telescopes through a complex photonic interferometer. Fully integrated astrophotonic devices stand to offer critical advantages for instrument development, including extreme miniaturization when operating at the diffraction-limit, as well as integration, superior thermal and mechanical stabilization owing to the small footprint, and high replicability offering significant cost savings. Numerous astrophotonic technologies have been developed to address shortcomings of conventional instruments to date, including for example the development of photonic lanterns to convert from multimode inputs to single mode outputs, complex aperiodic fiber Bragg gratings to filter OH emission from the atmosphere, complex beam combiners to enable long baseline interferometry with for example, ESO Gravity, and laser frequency combs for high precision spectral calibration of spectrometers. Despite these successes, the facility implementation of photonic solutions in astronomical instrumentation is currently limited because of (1) low throughputs from coupling to fibers, coupling fibers to chips, propagation and bend losses, device losses, etc, (2) difficulties with scaling to large channel count devices needed for large bandwidths and high resolutions, and (3) efficient integration of photonics with detectors, to name a few. In this roadmap, we identify 24 key areas that need further development. We outline the challenges and advances needed across those areas covering design tools, simulation capabilities, fabrication processes, the need for entirely new components, integration and hybridization and the characterization of devices. To realize these advances the astrophotonics community will have to work cooperatively with industrial partners who have more advanced manufacturing capabilities. With the advances described herein, multi-functional integrated instruments will be realized leading to novel observing capabilities for both ground and space based platforms, enabling new scientific studies and discoveries.

astrophotonics↗
NASA NTRS1997

Evaluation of Exposure From a Low Energy X-Ray Device Using Thermoluminescent Dosimeters

The exposure from an electron beam welding device was evaluated using thermoluminescent dosimeters (TLDs). The device generated low energy X-rays which the current dose equivalent conversion algorithm was not designed to evaluate making it necessary to obtain additional information relating to TLD operation at the photon energies encountered with the device. This was accomplished by performing irradiations at the National Institute of Standards and Technology (NIST) using low energy X-ray techniques. The resulting data was used to determine TLD badge response for low energy X-rays and to establish the relationship between TLD element response and the dose equivalent at specific depths in tissue for these photon energies. The new energy/dose equivalent calibration data was used to calculate the shallow and eye dose equivalent of badges exposed to the device.

Edwards, David L.↗
NASA NTRS2016

Photonic Integrated Circuits

Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

Laser↗
NASA NTRS2016

Photonic Integrated Circuits

Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

laser↗
NASA NTRS2006

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

infrared imaging↗
NASA NTRSDate not supplied

In-Situ XRD/XRF to Support Life Detection on Mars

X-ray diffraction / X-ray fluorescence (XRD/XRF) analysis provides the most comprehensive mineralogical / compositional characterization of rocks and soils of any flight-capable technique. XRD data provide quantitative mineralogy (including abundance of X-ray amorphous materials) and crystal chemistry (structure, elemental composition and valence state), and XRF data provide complimentary major, minor, and some trace element abundances. Both types of data are important in evaluating habitability (environment of formation) and biosignature preservation/degradation (post-depositional diagenetic change). Whether or not a relict biosignature is detected, the mineral assemblage and its geochemistry can be used to determine the habitability of an ancient environment (e.g., salinity, pH, temperature), and to identify potential sources of energy for life (e.g., elements in different redox states). In this respect, a null result (a habitable environment lacking evidence of life) can play an important role in constraining the parameters of the search. Conversely, diagenetic alteration (taphonomic change) resulting from post-depositional variations in temperature, pressure or fluid chemistry can preserve evidence of biogenicity, erase such evidence completely or indeed can provide for post-depositional habitable conditions in the subsurface. XRD / XRF data are critical to these determinations. The CheMin instrument on the Mars Science Laboratory (MSL) Curiosity rover is the first XRD instrument flown in space. CheMin operates in transmission geometry with a Co X-ray source to minimize fluorescence from iron. Diffracted photons are collected with an energy-sensitive charge-coupled device (CCD). The position of the diffracted photons provides structural information for minerals, whereas the energy of sample-generated X-ray fluorescence photons provides elemental information, though these XRF data are qualitative. Mineralogical data from the CheMin XRD identified the three circumstances above: habitable depositional environments (e.g., Yellowknife Bay), habitable subsurface/diagenetic environments (e.g., throughout the Murray formation), and diagenetic conditions that may destroy evidence of habitability (e.g., oxidative and acidic environments at Vera Rubin ridge). Technological advances in X-ray technology and lessons learned from the operation of CheMin on Mars have resulted in a next-generation XRD/XRF, called CheMinX. Replacement of CheMin’s CCD with an array of hybrid pixel detectors and improvements in focusing optics dramatically decrease analysis time (15 minutes vs. 22 hours for MSL-CheMin) and result in a better angular resolution (0.18 vs. 0.30 °2θ for MSL-CheMin). This increased resolution improves mineral detection, including discrimination between types of pyroxenes, which is not possible with MSL-CheMin data. The hybrid pixel detectors do not require cooling like the MSL-CheMin CCD, therefore reducing the power needed to operate CheMinX. CheMinX has a silicon-drift detector (SDD) to measure fluoresced photons, enabling the quantification of major, minor, and some trace elements via XRF. XRD/XRF data are collected simultaneously in CheMinX, obviating the need for multiple compositional instruments. The CheMinX design also improves upon MSL-CheMin’s sample handling. Instead of sample cells on wheel, which are often not reusable and add complexity in commanding the instrument, CheMinX has single-use cells in a cartridge/dispenser configuration. Because of these improvements, CheMinX is an ideal instrument for Discovery-class life-detection missions, including Mars Life Explorer that was recommended for development in the Planetary Science and Astrobiology Decadal Survey 2023-2032.

E B Rampe↗
NASA NTRS2015

Miniaturized High-Speed Modulated X-Ray Source

A miniaturized high-speed modulated X-ray source (MXS) device and a method for rapidly and arbitrarily varying with time the output X-ray photon intensities and energies. The MXS device includes an ultraviolet emitter that emits ultraviolet light, a photocathode operably coupled to the ultraviolet light-emitting diode that emits electrons, an electron multiplier operably coupled to the photocathode that multiplies incident electrons, and an anode operably coupled to the electron multiplier that is configured to produce X-rays. The method for modulating MXS includes modulating an intensity of an ultraviolet emitter to emit ultraviolet light, generating electrons in response to the ultraviolet light, multiplying the electrons to become more electrons, and producing X-rays by an anode that includes a target material configured to produce X-rays in response to impact of the more electrons.

Gendreau, Keith C.↗
NASA NTRS2007

Interband cascade detectors

A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.

Chuang, Shun Lien↗
NASA NTRS2010

Time-Gating Processes in Intra-Cavity Mode-Locking Devices Like Saturable Absorbers and Kerr Cells

Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.

Prasad, Narasimha↗
NASA NTRS1978

Solar cell collector

A method is provided for the fabrication of a photovoltaic device which possesses an efficient collector system for the conduction of the current generated by incident photons to the external circuitry of the device.

Evans, J. C., Jr.↗
NASA NTRS2002

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Hepp, Aloysius F.↗
NASA NTRS2009

Zinc Alloys for the Fabrication of Semiconductor Devices

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.

Ryu, Yungryel↗
NASA NTRS1982

An evaluation of an ICCD imager of dynamic range expansion technique and application of insitu procedures for life-time extension

Research toward practical implementation of the Intensified Charge Coupled Device (ICCD) as a photon-counting array detector for astronomy is reported. The first area of concentration was to determine the rate and extent of the lifetime limiting damage to the CCD caused by the impact of high energy electrons, and to find whether various methods of annealing the damage were productive. The second effort was to determine the performance of the ICCD in a photon-counting mode to produce extended dynamic range measurements. There are two main effects that appear as the practical results of the electron damage to the CCD. One is an increase in the leakage current, i.e., the normal thermal generation of charge carriers in the silicon that provides a background dark signal that adds to the light produced image. In an undamaged CCD, the leakage current is usually fairly uniform across the photosensitive area of the silicon chip, with the exception of various bright pixels which have an anomalous leakage current well above the overall level.

Currie, D. G.↗
NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗
NASA NTRS2016

Optical Breath Gas Extravehicular Activity Sensor for the Advanced Portable Life Support System

The function of the infrared gas transducer used during extravehicular activity (EVA) in the current space suit is to measure and report the concentration of carbon dioxide (CO2) in the ventilation loop. The next generation portable life support system (PLSS) requires highly accurate CO2 sensing technology with performance beyond that presently in use on the International Space Station extravehicular mobility unit (EMU). Further, that accuracy needs to be provided over the full operating pressure range of the suit (3 to 25 psia). Accommodation within space suits demands that optical sensors meet stringent size, weight, and power requirements. A laser diode (LD) sensor based on infrared absorption spectroscopy is being developed for this purpose by Vista Photonics, Inc. Version 1.0 prototype devices were delivered to NASA Johnson Space Center (JSC) in September 2011. The prototypes were upgraded with more sophisticated communications and faster response times to version 2.0 and delivered to JSC in July 2012. The sensors incorporate a laser diode based CO2 channel that also includes an incidental water vapor (humidity) measurement. The prototypes are controlled digitally with an field-programmable gate array microcontroller architecture. Based on the results of the iterative instrument development, further prototype development and testing of instruments were performed leveraging the lessons learned where feasible. The present development extends and upgrades the earlier hardware for the advanced PLSS 2.5 prototypes for testing at JSC. The prototypes provide significantly enhanced accuracy for water vapor measurement and eliminate wavelength drift affecting the earlier versions. Various improvements to the electronics and gas sampling are currently being advanced including the companion development of engineering development units that will ultimately be capable of radiation tolerance. The combination of low power electronics with the performance of a long wavelength laser spectrometer enables multi-gas sensors with significantly increased performance over that presently offered in the EMU.

Wood, William R.↗
NASA NTRS2019

Fabrication of Phononic-Isolated Kinetic Inductance Detectors

Kinetic inductance detectors (KID) have received increased interest due to their relative ease of fabrication, low noise, and scalability to large format arrays required by next generation of astronomical telescopes. The development of KIDs has progressed rapidly, with very low noise equivalent power demonstrated by several groups and KIDs arrays implemented in several ground-based and air-borne instruments. In this paper, we describe a new fabrication process which consists of a membrane isolated KID incorporating a phononic bandgap structure tuned to block recombination phonons from escaping to the thermal bath. This architecture is designed to increase the quasi-particle lifetime and results in increased responsivity to signal photons and lower noise. These devices have been fabricated as lumped-element resonators with hafnium inductors and Nb capacitors on low stress silicon nitride and silicon-on-insulator membranes. We discuss the fabrication process, which uses a combination of sub-micron laser based direct write lithography and nanoscale electron beam lithography.

Denis, Kevin L.↗
NASA NTRS1989

Stabilizing Semiconductor Devices With Hydrogen

Damage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.

Overhauser, Albert W.↗
NASA NTRS1989

Solid state photomultiplier for astronomy, phase 2

Epitaxial layers with varying donor concentration profiles were grown on silicon substrate wafers using chemical vapor deposition (CVD) techniques, and solid state photomultiplier (SSPM) devices were fabricated from the wafers. Representative detectors were tested in a low background photon flux, low temperature environment to determine the device characteristics for comparison to NASA goals for astronomical applications. The SSPM temperatures varied between 6 and 11 K with background fluxes in the range from less than 5 x 10 to the 6th power to 10 to the 13th power photons/square cm per second at wavelengths of 3.2 and 20 cm. Measured parameters included quantum efficiency, dark count rate and bias current. Temperature for optimal performance is 10 K, the highest ever obtained for SSPMs. The devices exhibit a combination of the lowest dark current and highest quantum efficiency yet achieved. Experimental data were reduced, analyzed and used to generate recommendations for future studies. The background and present status of the microscopic theory of SSPM operation were reviewed and summarized. Present emphasis is on modeling of the avalanche process which is the basis for SSPM operation. Approaches to the solution of the Boltzmann transport equation are described and the treatment of electron scattering mechanisms is presented. The microscopic single-electron transport theory is ready to be implemented for large-scale computations.

Besser, P. J.↗