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At least 145 records · Page 8

Kepler Planet Detection Metrics: Pixel-Level Transit Injection Tests of Pipeline Detection Efficiency for Data Release 25

This document describes the results of the fourth pixel-level transit injection experiment, which was designed to measure the detection efficiency of both the Kepler pipeline (Jenkins 2002, 2010; Jenkins et al. 2017) and the Robovetter (Coughlin 2017). Previous transit injection experiments are described in Christiansen et al. (2013, 2015a,b, 2016).In order to calculate planet occurrence rates using a given Kepler planet catalogue, produced with a given version of the Kepler pipeline, we need to know the detection efficiency of that pipeline. This can be empirically determined by injecting a suite of simulated transit signals into the Kepler data, processing the data through the pipeline, and examining the distribution of successfully recovered transits. This document describes the results for the pixel-level transit injection experiment performed to accompany the final Q1-Q17 Data Release 25 (DR25) catalogue (Thompson et al. 2017)of the Kepler Objects of Interest. The catalogue was generated using the SOC pipeline version 9.3 and the DR25 Robovetter acting on the uniformly processed Q1-Q17 DR25 light curves (Thompson et al. 2016a) and assuming the Q1-Q17 DR25 Kepler stellar properties (Mathur et al. 2017).

Pixel-Level Transit Injection↗

Two-Dimensional Interdigitated Pixel Detector for Energetic Particle Spectrometers

This paper describes a type of cosmic ray detector suitable for the construction of a small, low power space-based instrument to detect the energy and isotope of energetic nuclei, such as those produced by solar flares. The detector is similar to previous types of silicon PIN detectors where the fully depleted body of the wafer comprises intrinsic region of the PIN structure. The novel aspect of this detector is that the one surface is divided into a two-dimensional array of pixels, and that the collected holes are divided between a row and a column collector in each pixel, yielding both dimensions of position information from this side of the detector.

cosmic↗

CMOS Active Pixel Image Sensor

A new CMOS active pixel image sensor is reported. The sensor uses a 2.0mue double-poly, double-metal foundry CMOS process and is realized as a 28 x 28 array of 40 mue x 40 mue pixels. The Sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications.

CMOS↗

Anti-distortion bioinspired camera with an inhomogeneous photo-pixel array

The bioinspired camera, comprising a single lens and a curved image sensor—a photodiode array on a curved surface—, was born of flexible electronics. Its economical build lends itself well to space-constrained machine vision applications. The curved sensor, much akin to the retina, helps image focusing, but the curvature also creates a problem of image distortion, which can undermine machine vision tasks such as object recognition. Here we report an anti-distortion single-lens camera, where 4096 silicon photodiodes arrayed on a curved surface in a nonuniform pattern assimilated to the distorting optics are the key to anti-distortion engineering. That is, the photo-pixel distribution pattern itself is warped in the same manner as images are warped, which correctively reverses distortion. Acquired images feature no appreciable distortion across a 120° horizontal view, as confirmed by their neural-network recognition accuracies. This distortion correction via photo-pixel array reconfiguration is a form of in-sensor computing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Testing the limits of ITkPixV2: the ATLAS inner tracker pixel detector readout chip

The ITkPixV2 chip is the final production readout chip for the ATLAS Phase 2 Inner Tracker (ITk) upgrade at the upcoming High-Luminosity LHC (HL-LHC). Due to the extraordinarily high peak luminosity at the HL-LHC of 5 × 1034 cm-1 s-1, ITkPixV2 must meet significant increases in nearly all design requirements compared to the current ATLAS Inner Detector (ID), including a 10× increase in trigger rate, a 7.5× increase in hit rate, a 3× increase in radiation tolerance, and a 12.5× decrease in pixel current draw per unit area, all while maintaining a similar power per unit area as present pixel detectors. Here we present the first measurements of the ITkPixV2 chip operated at the limits of the full chip design requirements, including in particular a measurement of the activity-induced current of the chip as a function of increasing hit rate.

Le Pottier, L↗

High-energy X-ray imaging with a Germanium MM-PAD hybrid pixel detector

Germanium is a high-Z sensor material with excellent energy resolution and attractive properties for high-energy photon detection. Despite its advantages, the need for cryogenic operation and challenges in the fabrication of pixelated high-purity germanium have hindered the development of segmented detectors. We report on the fabrication and performance of a germanium imaging detector with 150 μm pixel pitch hybridized to the MM-PAD ASIC. The detector was capable of high-resolution radiographic imaging and has a fast temporal response. Additionally, we describe the detector's upper operating temperature limits using both the MM-PAD and MARS ASICs, achieving stable operation up to 130 K and 190 K, respectively.

36 MATERIALS SCIENCE↗

Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors

The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a ${15} \times {15}~\mu $ m2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor’s commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of $0.15\text {e}^ - $ , demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Smart Pixel Sensors for the HL-LHC

Large-scale particle physics experiments produce tens of terabytes of data every second. Innovative methods to manage the data rate at the HL-LHC, which expects to operate at 10x the luminosity of what the LHC was initially designed for, are needed. AI-on the chip provides a way to intelligently filter out low momentum clusters in the pixel detector. This will open up an opportunity to use the pixel detector for the first time in the CMS Level-1 trigger, and lead to increased sensitivity to new physics measurements and searches. We have taped out our first chip, which incorporates a $p_T$ filtering algorithm on an ASIC chip. Our initial $p_T$ filtering algorithm considers clusters that are tracked by CMS. We will report on ongoing studies seeking to enhance the performance of our filter by utilizing unsupervised learning on untracked clusters, thus increasing background rejection.

43 PARTICLE ACCELERATORS↗

On the accuracy of pixel relaxation labeling

An analysis of pixel labeling by probabilistic relaxation techniques is presented to demonstrate that these labeling procedures degenerate to weighted averages in the vicinity of fixed points. A consequence of this is that undesired label conversions can occur, leading to a deterioration of labeling accuracy at a stage after an improvement has already been achieved. Means for overcoming the accuracy deterioration are suggested and used as the basis for a possible design strategy for using probabilistic relaxation procedures. The results obtained are illustrated using simple data sets in which labeling on individual pixels can be examined and also using Landsat imagery to show application to data typical of that encountered in remote sensing applications.

Richards, J. A.↗

Methods of editing cloud and atmospheric layer affected pixels from satellite data

Subvisible cirrus clouds (SCi) were easily distinguished in mid-infrared (MIR) TIROS-N daytime data from south Texas and northeast Mexico. The MIR (3.55-3.93 micrometer) pixel digital count means of the SCi affected areas were more than 3.5 standard deviations on the cold side of the scene means. (These standard deviations were made free of the effects of unusual instrument error by factoring out the Ch 3 MIR noise on the basis of detailed examination of noisy and noise-free pixels). SCi affected areas in the IR Ch 4 (10.5-11.5 micrometer) appeared cooler than the general scene, but were not as prominent as in Ch 3, being less than 2 standard deviations from the scene mean. Ch 3 and 4 standard deviations and coefficients of variation are not reliable indicators, by themselves, of the presence of SCi because land features can have similar statistical properties.

Nixon, P. R.↗

Methods of editing cloud and atmospheric layer affected pixels from satellite data

Practical methods of computer screening cloud-contaminated pixels from data of various satellite systems are proposed. Examples are given of the location of clouds and representative landscape features in HCMM spectral space of reflectance (VIS) vs emission (IR). Methods of screening out cloud affected HCMM are discussed. The character of subvisible absorbing-emitting atmospheric layers (subvisible cirrus or SCi) in HCMM data is considered and radiosonde soundings are examined in relation to the presence of SCi. The statistical characteristics of multispectral meteorological satellite data in clear and SCi affected areas are discussed. Examples in TIROS-N and NOAA-7 data from several states and Mexico are presented. The VIS-IR cluster screening method for removing clouds is applied to a 262, 144 pixel HCMM scene from south Texas and northeast Mexico. The SCi that remain after cluster screening are sited out by applying a statistically determined IR limit.

Nixon, P. R.↗

Simulation of electronic registration of multispectral remote sensing images to 0.1 pixel accuracy

Band-to-band coregistration of multispectral remote sensing images can be achieved by electronic signal processing techniques rather than by costly and difficult mechanical alignment. This paper describes the results of a study of the end-to-end performance of electronic registration. The software simulation includes steps which model the performance of the geometric calibration process, the instrument image quality, detector performance and the effects of achieving coregistration through image resampling. The image resampling step emulates the Pipelined Resampling Processor, a real-time image resampler. The study demonstrates that the electronic alignment technique produces multispectral images which are superior to those produced by an imager whose pixel geometry is accurate to 0.1 pixel rms. The implications of this approach for future earth observation programs are discussed.

Reitsema, H. J.↗

The difference between laboratory and in-situ pixel-averaged emissivity: The effects on temperature-emissivity separation

Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) is a Japanese future imaging sensor which has five channels in thermal infrared (TIR) region. To extract spectral emissivity information from ASTER and/or TIMS data, various temperature-emissivity (T-E) separation methods have been developed to date. Most of them require assumptions on surface emissivity, in which emissivity measured in a laboratory is often used instead of in-situ pixel-averaged emissivity. But if these two emissivities are different, accuracies of separated emissivity and surface temperature are reduced. In this study, the difference between laboratory and in-situ pixel-averaged emissivity and its effect on T-E separation are discussed. TIMS data of an area containing both rocks and vegetation were also processed to retrieve emissivity spectra using two T-E separation methods.

Matsunaga, Tsuneo↗

Monolithic Active-Pixel Infrared Sensors

Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

Fossum, Eric R.↗

Measuring Pixel-Position Errors On CCD Imagers

Deviations of positions of pixels on charge-coupled-device (CCD) image detector from nominal rectangular grid pattern measured by method in which coherent-light interference fringes used as reference pattern. Conceived for use in determining pixel-position errors in astrometric cameras flown aboard spacecraft. Also applied to determination of similar errors in (and calibration of) terrestrial CCD cameras used as position sensors; for example, position-measuring cameras that are parts of robotic systems.

Shaklan, Stuart B.↗

Mapping Pixel Windows To Vectors For Parallel Processing

Mapping performed by matrices of transistor switches. Arrays of transistor switches devised for use in forming simultaneous connections from square subarray (window) of n x n pixels within electronic imaging device containing np x np array of pixels to linear array of n(sup2) input terminals of electronic neural network or other parallel-processing circuit. Method helps to realize potential for rapidity in parallel processing for such applications as enhancement of images and recognition of patterns. In providing simultaneous connections, overcomes timing bottleneck or older multiplexing, serial-switching, and sample-and-hold methods.

Duong, Tuan A.↗

CMOS Active-Pixel Image Sensor With Simple Floating Gates

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Fossum, Eric R.↗