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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Kim, Jae-Hoon↗
NASA NTRS1997

Development of 256 x 256 Element Impurity Band Conduction Infrared Detector Arrays for Astronomy

This report describes the work performed on a one and a half year advance technology program to develop Impurity Band Conduction (IBC) detectors with very low dark current, high quantum efficiency, and with good repeatable processes. The program fabricated several epitaxial growths of Si:As detecting layers from 15 to 35 microns thick and analyzed the performance versus the thickness and the Arsenic concentration of these epitaxial layers. Some of the epitaxial runs did not yield because of excessive residual impurities. The thicker epitaxial layers and the ones with higher Arsenic concentration resulted in good detectors with low dark currents and good quantum efficiency. The program hybridized six detector die from the best detector wafers to a low noise, 256 x 256 readout array and delivered the hybrids to NASA Ames for a more detailed study of the performance of the detectors.

Domingo, George↗
NASA NTRS1986

EUV astronomical spectroscopy with CCD detectors

The applicability of CCD detectors to astronomical extreme ultraviolet (EUV) spectroscopy (100-1250 A) is discussed. The advantages of CCDs in this spectral region include internal electron yield, the potential for very high quantum efficiency (about 50-90 percent), and broad wavelength response. Visible light suppression is achieved by a combination of low grating scattering, greater than unity electron yield in the EUV, and various filter techniques. For the current generation of CCDs, detection of only a few EUV photons will rapidly overwhelm the read noise; thus, for all practical S/N ratios used in astronomical spectroscopy, read noise will be negligible compared to the poisson statistics of the detected photons. A model based on experimental data for the quantum efficiency and electron yield of CCDs in the EUV is discussed.

Stern, R. A.↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS2004

Progress of Multicolor Single Detector to Detector Array Development for Remote Sensing

Knowledge of the spatial and temporal distribution of atmospheric species such as CO2, O3, H2O, and CH4 is important for understanding the chemistry and physical cycles involving Earth s atmosphere. Although several remote sensing techniques are suitable for such measurements they are considered high cost techniques involving complicated instrumentation. Therefore, simultaneous measurement of atmospheric species using a single remote sensing instrument is significant for minimizing cost, size and complexity. While maintaining the instrument sensitivity and range, quality of multicolor detector, in terms of high quantum efficiency and low noise are vital for these missions. As the first step for developing multicolor focal plan array, the structure of a single element multicolor detector is presented in this paper. The detector consists of three p-n junction layers of Si, GaSb and InAs wafer bonded to cover the spectral range UV to 900 nm, 800 nm to 1.7 m, and 1.5 m to 3.4 m, respectively. Modeling of the absorption coefficient for each material was carried out for optimizing the layers thicknesses for maximum absorption. The resulted quantum efficiency of each layer has been determined except InAs layer. The optical and electrical characterization of each layer structure is reported including dark current and spectral response measurements of Si pin structure and of GaSb and InAs p-n junctions. The effect of the material processing is discussed.

Abedin, M. Nurul↗
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
NASA NTRS2005

III-V Compound Detectors for CO2 DIAL Measurements

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Refaat, Tamer F.↗
NASA NTRS1985

Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser array

In recent experiments, 80-mW CW power in a single mode has been achieved from a neodymium:yttrium aluminum garnet (Nd:YAG) laser with only 1 W of electrical power input to a single semiconductor laser array pump. This corresponds to an overall efficiency of 8 percent, the highest reported CW efficiency for a Nd:YAG laser. A tightly focused semiconductor laser end pump configuration is used to achieve high pumping intensities (on the order of 1 kW/sq cm), which in turn causes the photon to photon conversion efficiency to approach the quantum efficiency (76 percent for Nd:YAG at 1.06 microns pumped at 0.810 micron). This is achieved despite the dual-lobed nature of the pump. Through the use of simple beam-combining schemes (e.g., polarization coupling and multireflection point pumping), output powers over 1 W and overall electrical to optical efficiencies as high as 10 percent are expected.

Sipes, D. L.↗
NASA NTRS1995

The components of crop productivity: measuring and modeling plant metabolism

Several investigators in the CELSS program have demonstrated that crop plants can be remarkably productive in optimal environments where plants are limited only by incident radiation. Radiation use efficiencies of 0.4 to 0.7 g biomass per mol of incident photons have been measured for crops in several laboratories. Some early published values for radiation use efficiency (1 g mol-1) were inflated due to the effect of side lighting. Sealed chambers are the basic research module for crop studies for space. Such chambers allow the measurement of radiation and CO2 fluxes, thus providing values for three determinants of plant growth: radiation absorption, photosynthetic efficiency (quantum yield), and respiration efficiency (carbon use efficiency). Continuous measurement of each of these parameters over the plant life cycle has provided a blueprint for daily growth rates, and is the basis for modeling crop productivity based on component metabolic processes. Much of what has been interpreted as low photosynthetic efficiency is really the result of reduced leaf expansion and poor radiation absorption. Measurements and models of short-term (minutes to hours) and long-term (days to weeks) plant metabolic rates have enormously improved our understanding of plant environment interactions in ground-based growth chambers and are critical to understanding plant responses to the space environment.

NASA Discipline Life Support Systems↗
NASA NTRS2007

2-.mu.m fiber amplified spontaneous emission (ASE) source

A 2-.mu.m fiber Amplified Spontaneous Emission (ASE) source provides a wide emission bandwidth and improved spectral stability/purity for a given output power. The fiber ASE source is formed from a heavy metal oxide multicomponent glass selected from germanate, tellurite and bismuth oxides and doped with high concentrations, 0.5-15 wt. %, thulium oxides (Tm.sub.2O.sub.3) or 0.1-5 wt% holmium oxides (Ho.sub.2O.sub.3) or mixtures thereof. The high concentration of thulium dopants provide highly efficient pump absorption and high quantum efficiency. Co-doping of Tm and Ho can broaden the ASE spectrum.

Jiang, Shibin↗
NASA NTRS1988

Charge coupled devices vs. microchannel plates in the extreme and far ultraviolet - A comparison based on the latest laboratory measurements

While microchannel plates (MCPs) have been established as imaging photon counters in the EUV and FUV for some years, CCDs are associated with low light level sensing at visible and near-IR wavelengths. Attention is presently given to recent proposals for CCDs' use as EUV and FUV detectors with quantum efficiencies sometimes exceeding those of MCPs; quantum resolution, format size, dynamic range, and long-term stability are also used as bases of comparison, for the cases of both space-based astronomical and spectroscopic applications.

Vallerga, J.↗
NASA NTRS2001

Apparatus and method using a holographic optical element for converting a spectral distribution to image points

A holographic optical element transforms a spectral distribution of light to image points. The element comprises areas, each of which acts as a separate lens to image the light incident in its area to an image point. Each area contains the recorded hologram of a point source object. The image points can be made to lie in a line in the same focal plane so as to align with a linear array detector. A version of the element has been developed that has concentric equal areas to match the circular fringe pattern of a Fabry-Perot interferometer. The element has high transmission efficiency, and when coupled with high quantum efficiency solid state detectors, provides an efficient photon-collecting detection system. The element may be used as part of the detection system in a direct detection Doppler lidar system or multiple field of view lidar system.

McGill, Matthew J.↗
NASA NTRS2005

1024 x 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 10(24) x 10(24) pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In this paper, we will discuss the performance in terms of quantum efficiency, NE(delta)T, uniformity, operability and modulation transfer functions.

uniformity↗
NASA NTRS2000

The Preflight Photometric Calibration of the Extreme-Ultraviolet Imaging Telescope EIT

This paper presents the preflight photometric calibration of the Extreme-ultraviolet Imaging Telescope (EIT) aboard the Solar and Heliospheric Observatory (SOHO). The EIT consists of a Ritchey-Chretien telescope with multilayer coatings applied to four quadrants of the primary and secondary mirrors, several filters and a backside-thinned CCD detector. The quadrants of the EIT optics were used to observe the Sun in 4 wavelength bands that peak near 171, 195, 284, and 304 . Before the launch of SOHO, the EIT mirror reflectivities, the filter transmissivities and the CCD quantum efficiency were measured and these values are described here. The instrumental throughput in terms of an effective area is presented for each of the various mirror quadrant and filter wheel combinations. The response to a coronal plasma as a function of temperature is also determined and the expected count rates are compared to the count rates observed in a coronal hole, the quiet Sun and an active region.

EIT (EXTREME-ULTRAVIOLET IMAGING TELESCOPE)↗
NASA NTRS1990

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Larsson, A.↗
NASA NTRS1988

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

Coutts, T. J.↗
NASA NTRS1986

The relative fluorescent efficiency of sodium salicylate between 90 and 800 eV

The relative fluorescent quantum efficiency of sodium salicylate was measured between 90 and 800 eV (138 -15 A) by the use of synchrotron radiation. A general increase in efficiency was observed in this spectral range except for abrupt decreases in efficiency at the carbon and oxygen K-edges. Beyond the oxygen K-edge (532 eV) the efficiency increased linearly with the incident photon energy to the limit of the present observations.

Angel, G. C.↗