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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

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Lasing characteristics of InAs quantum dot laers on InP substrate

Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

quantum dot semiconductor laser↗

2D Quantum Transport Modeling in Nanoscale MOSFETs

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Svizhenko, Alexei↗

Wavelets and the squeezed states of quantum optics

Wavelets are new mathematical objects which act as 'designer trigonometric functions.' To obtain a wavelet, the original function space of finite energy signals is generalized to a phase-space, and the translation operator in the original space has a scale change in the new variable adjoined to the translation. Localization properties in the phase-space can be improved and unconditional bases are obtained for a broad class of function and distribution spaces. Operators in phase space are 'almost diagonal' instead of the traditional condition of being diagonal in the original function space. These wavelets are applied to the squeezed states of quantum optics. The scale change required for a quantum wavelet is shown to be a Yuen squeeze operator acting on an arbitrary density operator.

Defacio, B.↗

A binary coherent optical receiver for the free-space channel

The structure of a coherent binary optical MAP receiver was derived and the effects of background radiation and phase estimation errors on receiver performance were evaluated. It was found that random phase errors do not affect the performance of the coherent receiver significantly, as long as the standard deviation of the phase error remains less than roughly 0.14 radians (or 8 degrees). It was also shown that background radiation is effectively suppressed by the optical homodyne receiver: Significant deterioration in receiver performance is observed only in the presence of extremely intense background fields. The most notable characteristic of the binary optical homodyne receiver therefore appears to be its ability to achieve quantum limited performance in high background environments, provided that sufficiently accurate estimates of the received phase can be obtained.

Vilnrotter, V. A.↗

Invariant criteria for bound states, degree of ionization, and plasma phase transition

Basis invariant characterizations of bound states and bound fraction of a partially ionized hydrogen plasma are given in terms of properties of the spectrum of eigenvalues and eigenfunctions of the equilibrium quantum statistical one-proton-one-electron reduced density matrix. It is suggested that these can be used to place theories of a proposed plasma-ionization phase transition on a firm foundation. This general approach may be relevant to cosmological questions such as the quark deconfinement-confinement transition.

Girardeau, M. D.↗

Berry phase in Heisenberg representation

We define the Berry phase for the Heisenberg operators. This definition is motivated by the calculation of the phase shifts by different techniques. These techniques are: the solution of the Heisenberg equations of motion, the solution of the Schrodinger equation in coherent-state representation, and the direct computation of the evolution operator. Our definition of the Berry phase in the Heisenberg representation is consistent with the underlying supersymmetry of the model in the following sense. The structural blocks of the Hamiltonians of supersymmetrical quantum mechanics ('superpairs') are connected by transformations which conserve the similarity in structure of the energy levels of superpairs. These transformations include transformation of phase of the creation-annihilation operators, which are generated by adiabatic cyclic evolution of the parameters of the system.

Andreev, V. A.↗

New variables for classical and quantum gravity

A Hamiltonian formulation of general relativity based on certain spinorial variables is introduced. These variables simplify the constraints of general relativity considerably and enable one to imbed the constraint surface in the phase space of Einstein's theory into that of Yang-Mills theory. The imbedding suggests new ways of attacking a number of problems in both classical and quantum gravity. Some illustrative applications are discussed.

Ashtekar, Abhay↗

Diatomic molecule variations

The rotational energy is separated from vibrational energy in the two-particle, steady-state wave equation and to first order the solutions are harmonic oscillator functions. The classical phase integral gives a partition function valid only at high temperature, but the quantum summation is easily performed to give analytic expressions for all the thermodynamic properties of the harmonic oscillator at all temperatures. Anharmonic effects are treated by small perturbation solutions to the wave equation and the relation between energy levels and a series expansion of the perturbation potential is derived. Next, the quantum solutions for an oscillator with a Morse-function potential are derived in terms of Laguerre polynomials.

Source record↗

Upconversion of broadband infrared spectra

An experimental device successfully upconverts IR radiation in the 3.2-5.0 micron wavelength range simultaneously to visible light at 0.80-0.88 microns, while preserving frequency coding and is thus applicable to IR spectroscopy. The 1.8-micron bandwidth of IR radiation that is upconverted without temperature or phase match tuning is the largest yet reported. The over-all system quantum efficiency of the upconverter/spectrometer system is 0.01% and could be improved to 0.4%.

Gurski, T. R.↗

High-Performance Computing Optimization for Aladyn – Adaptive Neural Network Molecular Dynamics Mini-Application

This report provides a description and performance evaluation of the optimization techniques for high performance computing (HPC) implementation of the open source Computational Materials mini-application Aladyn (https://github.com/nasa/aladyn). Aladyn is a basic molecular dynamics code written in FORTRAN 2003, which is designed to demonstrate the use of adaptive neural networks (ANNs) in atomistic simulations. The role of ANNs is to efficiently reproduce the very complex energy landscape resulting from the atomic interactions in materials with the accuracy of the more expensive quantum mechanics-based calculations. The ANN is trained on a large set of atomic structures calculated using the density functional theory (DFT) method. While achieving orders of magnitude faster computational performance than DFT, the ANN-based approach was still very computationally demanding compared to the conventional approach of using empirically fitted energy functions. After its initial development, Aladyn was evaluated and optimized by experts at the NASA Advanced Supercomputing (NAS) division to exploit modern supercomputer architectures. The code has been optimized for execution on multicore central processing units (CPUs), including Intel® Skylake microarchitecture, and on graphic accelerators, such as Nvidia® V100 graphic processing units (GPUs), using Open Multi-Processing (OpenMP) and Open Accelerators (OpenACC) programming interfaces. The optimization achieved a speedup of 4.7 times the baseline version on CPU performance and an additional 2.4 times on CPU+GPU performance. Atomistic computer simulations are a fundamental tool in materials research to model material properties form physics-based first principles. Atomic interaction, governed by Quantum Mechanics (QM) require sophisticated and highly computationally demanding mathematical models to calculate [1]. Classical methods use approximate functional forms, empirically fitted through a set of variable parameters to emulate atomic energies as direct functions of atomic coordinates [2]. While empirical potentials are computationally much simpler, allowing simulations of large-scale systems of up to a trillion (1012) atoms [3], they are substantially less accurate compared to quantum calculations and applicable only to very specific atomic configurations or predefined crystallographic phases. A recently suggested approach is to use heuristic machine learning methods [4], such as those based on Adaptive Neural Networks (ANNs) to predict atomic energies, after being trained on a sufficiently large database of QM-calculated structures [5,6]. This approach reduces significantly the computational complexity, allowing for simulations of orders of magnitude larger systems compared to QM-based methods without compromising accuracy. Still, compared to classical methods using empirical energy functions, ANN methods remain two- to three orders of magnitude more computationally demanding. Hence, the computational cost of simulations, together with the need for extensive training of ANNs, still makes the practical implementation of ANN-based methods quite challenging. The purpose of the Aladyn mini-application software [7], available as open source at https://github.com/nasa/aladyn, is to be a testbed for exploring possible optimization strategies to develop highly scalable parallel algorithms for ANN-based atomistic simulations. Aladyn is aimed at utilizing the architecture of the high-end modern highperformance computing (HPC) hardware based on multicore central processing units (CPUs) equipped with graphic processing unit (GPU) accelerators. Specifically, the goal is to optimize the performance on a single HPC compute node, before implementing scaling to multi-node parallelization using message passing interface (MPI). At the same time, the open source code of Aladyn can serve as a training model for students and professors in academia.

Yamakov, Vesselin I.↗

Self-assembled InAsSb quantum dots on (001) InP substrates

Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 53109/cm², however, InAsSb QDs of density as high as 4 X10¹º/cm² could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In0.53Ga0.47As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2µm.

Uhl, David↗

Planetary astronomy and supporting laboratory research

The aim was to obtain form laboratory measurements the molecular parameters needed to interpret observations of planetary and cometary spectra, and to develop the analytical and computational techniques to interpret the observed spectra in terms of planetary atmospheres including solids and cometary ices. The gas phase molecular parameters measured include the intensities and half-widths of vib-rotational lines, total intensities of absorption bands, temperature dependencies, and absorption and pressure parameters in random-band models of absorption bands. Computation of line shapes of H2 quadrupole lines from quantum mechanical first principles for comparison with laboratory data and use in modeling of planetary atmospheres was accomplished. The solid phase measurements include band profile and quantitative intensity measurements and dependence on composition as well as thermal and photolytic processing which mimics the particular astrophysical environments. Work on GeH4, PH3, has made significant progress.

Valero, F. P. J.↗

Normalizing parameters for the critical flow rate of simple fluids through nozzles

It is shown that two-phase critical nozzle flow of simple fluids almost obeys the principle of corresponding states. Quantum fluid departures from the principle are resolved as a function of temperature for para-hydrogen and helium. The critical flow rates are normalized, using a normalizing parameter for which the critical flow rates of all simple fluids reduce to a single isothermal curve. The expression obtained for the normalizing parameter is shown to provide good agreement with the experiment for the critical flow rates of nitrogen, oxygen, and para-hydrogen.

Hendricks, R. C.↗

Semiclassical approximations in the coherent-state representation

The semiclassical limit of the stationary Schroedinger equation in the coherent-state representation is analyzed simultaneously for the groups W1, SU(2), and SU(1,1). A simple expression for the first two orders for the wave function and the associated semiclassical quantization rule is obtained if a definite choice for the classical Hamiltonian and expansion parameter is made. The behavior of the modulus of the wave function, which is a distribution function in a curved phase space, is studied for the three groups. The results are applied to the quantum triaxial rotor.

Kurchan, J.↗

Growing High-Quality InAs Quantum Dots for Infrared Lasers

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Qiu, Yueming↗