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At least 145 records · Page 8

Doped GaInAs/GaP Quantum Well Superlattice Solar Cells With 27.5% Efficiency

Quantum wells can extend the absorption range of a solar cell and are typically placed in the intrinsic region of the device to enable efficient carrier collection via drift. Thick intrinsic regions are needed for significant absorption in the low bandgap quantum wells, resulting in a large depletion region recombination and ultimately a solar cell with a low fill factor (FF). However, in quantum well superlattice solar cells where tunneling plays a dominant role in carrier transport, collection by carrier diffusion may be possible, relieving the requirement for quantum wells to be placed in the intrinsic region. Here, we investigate doping in stress-balanced quantum well superlattice solar cells using thin 2 nm GaP barriers. Doping reduces J02 depletion region recombination and improves the solar cell FF up to 86.7%, but very high doping eventually reduces the carrier collection, leading to a tradeoff in efficiency. Finally, we show that the barrier thickness also plays an important role in carrier collection, and we demonstrate high efficiency 27.5% single-junction devices with a doped superlattice.

13 HYDRO ENERGY↗

A Model for Predicting Thermoelectric Properties of Bi2Te3

A parameterized orthogonal tight-binding mathematical model of the quantum electronic structure of the bismuth telluride molecule has been devised for use in conjunction with a semiclassical transport model in predicting the thermoelectric properties of doped bismuth telluride. This model is expected to be useful in designing and analyzing Bi2Te3 thermoelectric devices, including ones that contain such nano - structures as quantum wells and wires. In addition, the understanding gained in the use of this model can be expected to lead to the development of better models that could be useful for developing other thermoelectric materials and devices having enhanced thermoelectric properties. Bi2Te3 is one of the best bulk thermoelectric materials and is widely used in commercial thermoelectric devices. Most prior theoretical studies of the thermoelectric properties of Bi2Te3 have involved either continuum models or ab-initio models. Continuum models are computationally very efficient, but do not account for atomic-level effects. Ab-initio models are atomistic by definition, but do not scale well in that computation times increase excessively with increasing numbers of atoms. The present tight-binding model bridges the gap between the well-scalable but non-atomistic continuum models and the atomistic but poorly scalable ab-initio models: The present tight-binding model is atomistic, yet also computationally efficient because of the reduced (relative to an ab-initio model) number of basis orbitals and flexible parameterization of the Hamiltonian.

Lee, Seungwon↗

Magnetic Response of Excitons and Excitonic Complexes in Defective Hexyl Ammonium Lead Iodide Self-Assembled Quantum Wells

Correlating the magnetic behavior of low-dimensional semiconductors with the chemistry used to form these excitonic materials remains crucial to the development of devices applied to quantum technologies. In this study, we apply large magnetic fields during the collection of low-temperature photoluminescence (PL) to assess the magnetic properties of excitons in hexyl ammonium lead iodide (HA 2 PbI 4 ) self-assembled quantum wells (SAQWs) formed at liquid−liquid interfaces. The effect of incident laser power and temperature was used to assign lower energy features in these samples’ PL spectra to both excitons trapped at defect sites and trions. Measured peaks shifts allow us to estimate coupling between the applied magnetic fields and the charged defect excitons. Our conclusions are supported by density functional theory calculations on supercells of the proposed defective HA 2 PbI 4 SAQW structure. Additionally, we find an anomalous magnetic response from trion states that resembles the behavior of interacting excitonic complexes in similar, quantum-confined materials at low temperatures. These results highlight the crucial role that chemical conditions can play in the magnetic response of 2D semiconductors applied in quantum technologies.

defect chemistry↗

Feasibility Study of Cargo Airship Transportation Systems Powered by New Green Energy Technologies

The development of transportation systems that use new and sustainable energy technologies is of utmost importance due to the possible future shortfalls that current transportation modes will encounter because of increased volume and costs. The introduction and further research and development of new transportation and energy systems by materials researchers at the National Aeronautics and Space Administration (NASA) Langley Research Center (LaRC) and the Department of Transportation are discussed in this Technical Memorandum. In this preliminary study, airship concepts were assessed for cargo transportation using various green energy technologies capable of 24-hour operation (i.e., night and day). Two prototype airships were successfully constructed and tested at LaRC to demonstrate their feasibility: one with commercially available solar cells for operation during the daytime and one with microwave rectennas (i.e., rectifying antennas) developed in-house for night-time operation. The test results indicate the feasibility of a cargo transportation airship powered by new green energy sources and wireless power technology. Future applications will exploit new green energy sources that use materials and devices recently developed or are in the process of being developed at LaRC. These include quantum well SiGe solar cells; low, mid-, and high temperature thermoelectric modules; and wireless microwave and optical rectenna devices. This study examines the need and development of new energy sources for transportation, including the current status of research, materials, and potential applications.

Skuza, Jonathan R.↗

Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing

Abstract Quasi‐2D Ruddlesden–Popper halide perovskites with a large exciton binding energy, self‐assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi‐2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower‐dimensional nanosheets (high‐bandgap domains) to 3D nanocrystals (low‐bandgap domains). High‐quality quasi‐2D perovskite (PEA) 2 (FA) 3 Pb 4 Br 13 films are fabricated by solution engineering. Grazing‐incidence wide‐angle X‐ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge‐carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high‐bandgap domains to the low‐bandgap domains (<0.5 ps) compared to the randomly oriented films. High‐performance light‐emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm −2 is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi‐2D films to achieve efficient energy transfer, which is a critical requirement for light‐emitting devices.

Lei, Lei↗

Quantum interference of currents in an atomtronic SQUID

Quantum interference of currents is the most important and well known quantum phenomenon in a conventional superconducting quantum interference device (SQUID). Here, we report the observation of quantum interference of currents in an atomtronic SQUID. Analogous to a conventional SQUID, currents flowing through two junctions in an atomtronic SQUID interfere due to the phase difference from rotation. This interference results in modulation of critical currents. This modulation was observed for three different radii with clear modulation periods which were measured to be consistent with fundamental rotation rates. This observation shows the possibility of studying various interesting SQUID physics with an atomtronic SQUID and especially, macroscopic quantum phenomena with currents may be realized with an atomtronic SQUID toward the goal of quantum metrology of rotation sensing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness

A new approach to atomic layer etching (ALE) has been demonstrated, and its application to 4H-SiC is reported here. By pulsing only the DC bias for an Ar/Cl2 inductively coupled plasma-reactive ion etching system, the etch cycle duration is reduced by more than an order of magnitude relative to conventional ALE processes. Gas flows are not changed throughout the ALE process. With this process protocol, we achieved an etch rate of 2.48±0.09 Å/cycle with 6 s cycles, an RMS surface roughness (Rq) of 0.83±0.08 Å, and an ALE synergy value of S = 99%. The parameters explored within this ALE process demonstrate effective subangstrom smoothening of 4H-SiC surfaces and is well-suited for a variety of classical and quantum device nanofabrication.

42 ENGINEERING↗

Benchmarking characterization methods for noisy quantum circuits

Effective methods for characterizing the noise in quantum computing devices are essential for programming and debugging circuit performance. Existing approaches vary in the information obtained as well as the amount of quantum and classical resources required, with more information generally requiring more resources. Here we benchmark the characterization methods of gate set tomography, Pauli channel noise reconstruction, and empirical direct characterization for developing models that describe noisy quantum circuit performance on a 27-qubit superconducting transmon device. We evaluate these models by comparing the accuracy of noisy circuit simulations with the corresponding experimental observations. Here, we find that the agreement of noise model to experiment does not correlate with the information gained by characterization and that the underlying circuit strongly influences the best choice of characterization approach. Empirical direct characterization scales best of the methods we tested and produced the most accurate characterizations across our benchmarks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Towards an Imaging Mid-Infrared Heterodyne Spectrometer

We are developing a concept for a compact, low-mass, low-power, mid-infrared (MIR; 5- 12 microns) imaging heterodyne spectrometer that incorporates fiber optic coupling, Quantum Cascade Laser (QCL) local oscillator, photomixer array, and Radio Frequency Software Defined Readout (RFSDR) for spectral analysis. Planetary Decadal Surveys have highlighted the need for miniaturized, robust, low-mass, and minimal power remote sensing technologies for flight missions. The drive for miniaturization of remote sensing spectroscopy and radiometry techniques has been a continuing process. The advent of MIR fibers, and MEMS techniques for producing waveguides has proven to be an important recent advancement for miniaturization of infrared spectrometers. In conjunction with well-established photonics techniques, the miniaturization of spectrometers is transitioning from classic free space optical systems to waveguide/fiber-based structures for light transport and producing interference effects. By their very nature, these new devices are compact and lightweight. Mercury-Cadmium-Telluride (MCT) and Quantum Well Infrared Photodiodes (QWIP) arrays for heterodyne applications are also being developed. Bulky electronics is another barrier that precluded the extension of heterodyne systems into imaging applications, and our RFSDR will address this aspect.

Hewagama, T.↗

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

Abstract The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n - and p -channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe 2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe 2 quantum dots, we realize both p - and n -channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tunable Quantum-Well Submillimeter-Wave Oscillators

Tunable submillimeter-wave generator is layered (AI/Ga)As device. Frequencies adjusted via applied voltages. New device concept offers potential to make relatively compact, efficient local oscillators for heterodyne mixers in submillimeter radar and imaging systems, nondestructive testing, diagnosis of plasmas, airborne spectroscopy of atmosphere, detection of weapons and other contraband, and communications.

Maserjian, Joseph↗

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Abstract Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

2D heterostructures↗

Very Long Wavelength Intersubband Infrared Hot Electron Transistor

We have demonstrated the first very long wavelength (16 micrometers) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/A1_xGa_(1- x)As (X=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick A1_xGa_(1-x)As (X=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.

quantum↗

Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection

The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.

quantum cascade detector↗

Observation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature

Abstract Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born–Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride substrate and gated with an ultra-thin gold layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture, by decoupling graphene optoelectronic properties from the substrate effects, allows for observing quantum phenomena at room temperature.

Materials Science↗

Autonomous Tuning and Charge-State Detection of Gate-Defined Quantum Dots

Defining quantum dots in semiconductor-based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning process, which first determines whether devices are functional and then attempts to tune the functional devices to the single or double quantum-dot regime. We show that automating well-established manual-tuning procedures and replacing the experimenter’s decisions by supervised machine learning is sufficient to tune double quantum dots in multiple devices without premeasured input or manual intervention. The quality of measurement results and charge states are assessed by four binary classifiers trained with experimental data, reflecting real device behavior. We compare and optimize eight models and different data preprocessing techniques for each of the classifiers to achieve reliable autonomous tuning, an essential step towards scalable quantum systems in quantum-dot-based qubit architectures.

Darulova, J↗

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Accelerating Noisy VQE Optimization with Gaussian Processes

Hybrid variational quantum algorithms, which combine a classical optimizer with evaluations on a quantum chip, are the most promising candidates to show quantum advantage on current noisy, intermediate-scale quantum (NISQ) devices. The classical optimizer is required to perform well in the presence of noise in the objective function evaluations, or else it becomes the weakest link in the algorithm. We introduce the use of Gaussian Processes (GP) as surrogate models to reduce the impact of noise and to provide high quality seeds to escape local minima, whether real or noise-induced. We build this as a framework on top of local optimizations, for which we choose Implicit Filtering (ImFil) in this study. ImFil is a state-of-the-art, gradient-free method, which in comparative studies has been shown to outperform on noisy VQE problems. The result is a new method: "GP+ImFil". We show that when noise is present, the GP+ImFil approach finds results closer to the true global minimum in fewer evaluations than standalone ImFil, and that it works particularly well for larger dimensional problems. Using GP to seed local searches in a multi-modal landscape shows mixed results: although it is capable of improving on ImFil standalone, it does not do so consistently and would only be preferred over other, more exhaustive, multistart methods if resources are constrained.

Muller, Juliane↗